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    • 22. 发明申请
    • Electron Interferometer or Electron Microscope
    • 电子干涉仪或电子显微镜
    • US20080302965A1
    • 2008-12-11
    • US11547054
    • 2005-03-07
    • Ken HaradaTetsuya AkashiYoshihiko TogawaTsuyoshi Matsuda
    • Ken HaradaTetsuya AkashiYoshihiko TogawaTsuyoshi Matsuda
    • G01N23/00
    • H01J37/295H01J37/26H01J2237/1514H01J2237/2614
    • In an electron beam interference system using an electron biprism, which is capable of independently controlling each of the interference fringe spacing s and the interference width W, both of which are important parameters for an interferometer and for an interferogram acquired by the interferometer, an optical system used in a two-stage electron biprism interferometer is adopted. The optical system uses two stages of electron biprisms in an optical axis direction to give the flexibility to the relative magnification relative to a specimen image and that relative to an image of a filament electrode of the electron biprism. In addition, as a two-stage configuration in which two objective lenses (51, 52) are combined, independently controlling the focal length of each objective lens makes it possible to set the relative magnification relative to a specimen image and that relative to an image of the filament electrode of the electron biprism at arbitrary values.
    • 在使用电子双棱镜的电子束干涉系统中,其能够独立地控制每个干涉条纹间距s和干涉宽度W,这两者都是干涉仪和干涉仪获取的干涉图的重要参数,光学 采用两级电子双棱镜干涉仪中使用的系统。 光学系统在光轴方向上使用两阶段的电子双棱镜,以相对于标本图像相对于相对放大率以及相对于电子双棱镜的细丝电极的图像具有灵活性。 另外,作为组合了两个物镜(51,52)的两级配置,独立地控制每个物镜的焦距使得可以相对于标本图像和相对于图像设置相对放大率 的电子双棱镜的灯丝电极的任意值。
    • 23. 发明申请
    • Polishing method
    • 抛光方法
    • US20060134908A1
    • 2006-06-22
    • US11266967
    • 2005-11-04
    • Junhui OhAtsunori KawamuraTsuyoshi MatsudaTatsuhiko HiranoKatsunobu HoriKenji Sakai
    • Junhui OhAtsunori KawamuraTsuyoshi MatsudaTatsuhiko HiranoKatsunobu HoriKenji Sakai
    • H01L21/4763
    • H01L21/7684H01L21/02074H01L21/3212
    • A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent. Thus, the wiring of the semiconductor device is reliably formed.
    • 用于研磨物体以形成用于半导体器件的布线的方法包括:通过化学和机械抛光去除导体层的外部的一部分以暴露阻挡层的上表面; 以及通过化学和机械抛光去除导体层的外部部分的剩余部分和阻挡层的外部部分,以露出绝缘体层的上表面。 当去除导体层的外部的一部分时,使用包含成膜剂的第一抛光组合物对物体的上表面进行化学和机械抛光。 随后,洗涤物体的上表面以通过第一抛光组合物中的成膜剂除去在导体层的上表面上形成的保护膜。 此后,使用含有成膜剂的第二抛光组合物再次对物体的上表面进行化学和机械抛光。 因此,可靠地形成半导体器件的布线。
    • 28. 发明授权
    • Battery charge/discharge control apparatus
    • 电池充放电控制装置
    • US08779723B2
    • 2014-07-15
    • US13379980
    • 2010-06-01
    • Takashi OganeNaoki MarunoTsuyoshi MatsudaYuji Fujita
    • Takashi OganeNaoki MarunoTsuyoshi MatsudaYuji Fujita
    • H02J7/00
    • B60W20/13B60K6/485B60L11/1857B60L11/1862B60L11/187B60L2260/50B60W10/26B60W20/00B60W2510/246B60W2510/248B60W2530/14G01R31/3679H01M10/443H01M10/48H01M2220/20Y02T10/6226Y02T10/7044Y02T10/705
    • A battery charge/discharge control apparatus for a vehicle capable of driving an electric motor by a battery is provided. Temperature of the battery is detected, temperature history distribution of the battery after start of temperature detection is calculated, and a lifetime workload of the battery is calculated on the basis of this temperature history distribution of the battery. A permissible value of a workload increase rate indicating a workload to increase per unit distance is calculated on the basis of the lifetime workload of the battery and a travel distance of the vehicle. An actual workload increase rate of the battery is compared with the permissible value of the workload increase rate. In the case where the actual workload increase rate is larger than the permissible value of the workload increase rate, an output is restricted from the output of the battery restricted in a normal driving mode if necessary by a restricted value based upon a difference between the actual workload increase rate and the permissible value of the workload increase rate. This makes it possible to carry out lifetime prolonging control for the battery more accurately by setting up an appropriate charge/discharge permissible amount in accordance with temperature change of the battery in the past.
    • 提供一种能够通过电池驱动电动机的车辆的电池充放电控制装置。 检测电池的温度,计算开始温度检测后的电池的温度历史分布,并且基于电池的该温度历史分布来计算电池的寿命工作量。 基于电池的寿命工作量和车辆的行驶距离来计算表示每单位距离增加的工作负荷的工作量增加率的允许值。 将电池的实际工作负载增加率与工作量增加率的允许值进行比较。 在实际工作负荷增加率大于工作量增加率的允许值的情况下,如果必要,则以正常驱动模式限制的电池的输出限制输出,基于实际工作负荷增加率的实际值之间的差 工作量增加率和工作量增加率的允许值。 这使得可以通过根据过去的电池的温度变化设置适当的充电/放电允许量来更精确地执行电池的终身延长控制。
    • 29. 发明授权
    • Electron interferometer or electron microscope
    • 电子干涉仪或电子显微镜
    • US07816648B2
    • 2010-10-19
    • US11547054
    • 2005-03-07
    • Ken HaradaTetsuya AkashiYoshihiko TogawaTsuyoshi Matsuda
    • Ken HaradaTetsuya AkashiYoshihiko TogawaTsuyoshi Matsuda
    • G01B15/00
    • H01J37/295H01J37/26H01J2237/1514H01J2237/2614
    • In an electron beam interference system using an electron biprism, which is capable of independently controlling each of the interference fringe spacing s and the interference width W, both of which are important parameters for an interferometer and for an interferogram acquired by the interferometer, an optical system used in a two-stage electron biprism interferometer is adopted. The optical system uses two stages of electron biprisms in an optical axis direction to give the flexibility to the relative magnification relative to a specimen image and that relative to an image of a filament electrode of the electron biprism. In addition, as a two-stage configuration in which two objective lenses (51, 52) are combined, independently controlling the focal length of each objective lens makes it possible to set the relative magnification relative to a specimen image and that relative to an image of the filament electrode of the electron biprism at arbitrary values.
    • 在使用电子双棱镜的电子束干涉系统中,其能够独立地控制每个干涉条纹间距s和干涉宽度W,这两者都是干涉仪和干涉仪获取的干涉图的重要参数,光学 采用两级电子双棱镜干涉仪中使用的系统。 光学系统在光轴方向上使用两阶段的电子双棱镜,以相对于标本图像相对于相对放大率以及相对于电子双棱镜的细丝电极的图像具有灵活性。 另外,作为组合了两个物镜(51,52)的两级配置,独立地控制每个物镜的焦距使得可以相对于标本图像和相对于图像设置相对放大率 的电子双棱镜的灯丝电极的任意值。