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21. 发明授权

US07302088B2 Personal verification device, card-type information storage medium, and information processing system using the same 有权
标题翻译：个人验证装置，卡式信息存储介质和使用该验证装置的信息处理系统
公开(公告)号：US07302088B2
公开(公告)日：2007-11-27
申请号：US10614873
申请日：2003-07-09
申请人： Kazuhiko Amano , Mitsutoshi Miyasaka , Tatsuya Shimoda
发明人： Kazuhiko Amano , Mitsutoshi Miyasaka , Tatsuya Shimoda
IPC分类号： G06K9/00
CPC分类号： G06K9/0002
摘要： A personal verification device includes a fingerprint sensor which detects a fingerprint of an operator, and a pulse wave sensor which detects a pulse wave of the operator. An index extraction section processes the pulse wave detected by the pulse wave sensor and extracts at least one index. First reference information which is compared with a fingerprint is stored in a first reference information storage section. Second reference information which is compared with the at least one index is stored in a second reference information storage section. A verification section outputs a signal indicating that the operator is true when it is determined that the operator is a registered person based on the result of comparison between the fingerprint and the first reference information, and it is determined that the operator is alive based on the result of comparison between the at least one index and the second reference information.
摘要翻译：个人验证装置包括检测操作者的指纹的指纹传感器和检测操作者的脉搏波的脉搏波传感器。索引提取部分处理由脉波传感器检测的脉波，并提取至少一个索引。与指纹进行比较的第一参考信息被存储在第一参考信息存储部分中。与至少一个索引进行比较的第二参考信息被存储在第二参考信息存储部分中。基于指纹和第一参考信息之间的比较结果确定运营商是注册人时，验证部分输出指示运营商为真的信号，并且基于该指示符确定运营商是活着的所述至少一个索引和所述第二参考信息之间的比较结果。

22. 发明授权

US07233685B2 Information device and display control method 有权
标题翻译：信息设备和显示控制方法
公开(公告)号：US07233685B2
公开(公告)日：2007-06-19
申请号：US10653170
申请日：2003-09-03
申请人： Mitsutoshi Miyasaka , Tomio Ikegami
发明人： Mitsutoshi Miyasaka , Tomio Ikegami
IPC分类号： G06K9/00
CPC分类号： G06K9/0002 , G06F3/03547 , G06F21/32 , G06F21/83 , G06F2203/0338
摘要： In an information device, a fingerprint image capture section captures a fingerprint image of an operator. When a fingerprint image captured by the fingerprint image capture section is referred to as a first fingerprint image and a fingerprint image captured at a given time interval after the first fingerprint image is captured is referred to as a second fingerprint image, a comparison section compares minutiae points of the first and second fingerprint images extracted by a minutiae point extraction section. An image generation section generates image information which is changed while reflecting the comparison results of the comparison section. A display section displays an image based on the image information generated by the image generation section. The information device may be provided with a check section, and display control by the display section may be performed after a fingerprint image is checked by the check section.
摘要翻译：在信息装置中，指纹图像捕获部分捕获操作者的指纹图像。将由指纹图像拍摄部拍摄的指纹图像称为第一指纹图像，并且在捕获第一指纹图像之后以给定时间间隔拍摄的指纹图像被称为第二指纹图像，比较部分将细节由细节点提取部分提取的第一和第二指纹图像的点。图像生成部生成反映比较部的比较结果而变化的图像信息。显示部分基于由图像生成部生成的图像信息来显示图像。信息装置可以设置有检查部，并且可以在由检查部检查指纹图像之后，由显示部进行显示控制。

23. 发明申请

US20050078856A1 Electrostatic capacitance detection device 有权
标题翻译：静电电容检测装置
公开(公告)号：US20050078856A1
公开(公告)日：2005-04-14
申请号：US10925031
申请日：2004-08-25
申请人： Mitsutoshi Miyasaka , Hiroyuki Hara
发明人： Mitsutoshi Miyasaka , Hiroyuki Hara
IPC分类号： G01B7/28 , A61B5/117 , G06K9/00
CPC分类号： G06K9/0002
摘要： Aspects of the invention provide a superior electrostatic capacitance detecting device. The electrostatic capacitance detection device can include M number of row lines, N number of column lines, and electrostatic capacitance detecting devices formed at intersections of these lines. The electrostatic capacitance detecting element can include a signal detection element, a signal amplifying element, a column selecting element, and a row selecting element, and the signal detection element can include a capacitance detecting electrode, a capacitance detecting dielectric layer, and a reference capacitor, and one electrode of the reference capacitor connects to a column line.
摘要翻译：本发明提供一种优良的静电电容检测装置。静电电容检测装置可以包括M行行线，N列列线和在这些线的交点处形成的静电电容检测装置。静电电容检测元件可以包括信号检测元件，信号放大元件，列选择元件和行选择元件，并且信号检测元件可以包括电容检测电极，电容检测电介质层和参考电容器，参考电容器的一个电极连接到列线。

24. 发明授权

US06621101B2 Thin-film transistor 有权
公开(公告)号：US06621101B2
公开(公告)日：2003-09-16
申请号：US09936042
申请日：2001-12-12
申请人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
发明人： Ichio Yudasaka , Mitsutoshi Miyasaka , Piero Migliorato
IPC分类号： H01L29786
CPC分类号： H01L29/78696 , H01L29/78612
摘要： The present invention provides, in a TFT, a channel region facing a gate electrode through a gate insulating film, a source electrode connected to the channel region and a drain region connected to the channel region on the side opposite the source region that are formed in a polycrystal semiconductor film that was patterned in island forms. In the channel region, a recombination center is formed for capturing a small number of carriers (holes) by impurities, such as inert-gas, metals, Group III elements, Group IV elements and Group V elements, introduced to a predetermined region in this channel region, or by defects generated due to the introduction of these impurities. The present invention thus provides an arrangement restraining bipolar transistor type behavior to stabilize saturation current and to provide a TFT that can improve reliability.

25. 发明授权

US06580129B2 Thin-film transistor and its manufacturing method 有权
公开(公告)号：US06580129B2
公开(公告)日：2003-06-17
申请号：US09914914
申请日：2001-12-13
申请人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
发明人： Basil Lui , Piero Migliorato , Ichio Yudasaka , Mitsutoshi Miyasaka
IPC分类号： H01L2900
CPC分类号： H01L29/66757 , H01L29/78612 , H01L29/78621 , H01L29/78624 , H01L29/78645
摘要： The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest to a drain domain side among the divided channel domains. Therefore, even if the impurity concentration is relatively high in the low-concentration domain located between the divided channel domains and a low-concentration drain domain, an abnormal increase of drain current in the saturated region can be prevented, and a TFT with a high drain current level can be obtained. Thus, the present invention provides a TFT and its manufacturing method where abnormal increase of drain current in the saturated region can be prevented and the drain current level in the saturated region is sufficiently high.

26. 发明授权

US06180957B2 Thin-film semiconductor device, and display system using the same 失效
标题翻译：薄膜半导体器件和使用其的显示系统
公开(公告)号：US06180957B2
公开(公告)日：2001-01-30
申请号：US08827732
申请日：1997-04-08
申请人： Mitsutoshi Miyasaka , Yojiro Matsueda , Satoshi Takenaka
发明人： Mitsutoshi Miyasaka , Yojiro Matsueda , Satoshi Takenaka
IPC分类号： H01L27088
CPC分类号： H01L21/0262 , G02F1/13454 , G09G3/2011 , G09G3/3611 , G09G3/3648 , G09G3/3688 , G09G2310/027 , G09G2310/0283 , G09G2310/0289 , G09G2320/028 , G09G2330/021 , H01L21/0242 , H01L21/02488 , H01L21/02532 , H01L27/1214 , H01L29/66757 , H01L29/78618 , H01L29/78621 , H01L29/78627 , H01L29/78675
摘要： A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately or less 580° C. and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy and simple fabrication of a high-performance thin-film semiconductor device. A thin-film semiconductor device capable of low-voltage and high-speed drive is provided. The short-channel type of a TFT circuit with an LDD structure reduces a threshold voltage, increases speed, restrains the power consumption and increases a breakdown voltage. The operational speeds of the thin-film semiconductor device is further increased by optimizing the maximum impurity concentration of an LDD portion, a source portion a drain portion, as well as optimizing the LDD length and the channel length. A display system is provided using these TFTs having drive signals at or below approximately the TTL level.
摘要翻译：提供了高性能的薄膜半导体器件和简单的制造方法。在大约低于580℃和至少约6 /分钟的沉积速率沉积硅膜之后，进行热氧化。这确保了高性能薄膜半导体器件的简单且简单的制造。提供能够进行低电压和高速驱动的薄膜半导体器件。具有LDD结构的TFT电路的短沟道类型降低阈值电压，增加速度，抑制功耗并增加击穿电压。通过优化LDD部分，源部分，漏极部分的最大杂质浓度以及优化LDD长度和沟道长度，进一步提高薄膜半导体器件的操作速度。使用具有等于或低于大约TTL电平的驱动信号的这些TFT来提供显示系统。

27. 发明授权

US6066516A Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and method for fabricating solar cells and active matrix liquid crystal devices 失效
标题翻译：用于形成晶体半导体层的方法，薄膜晶体管的制造方法以及制造太阳能电池和有源矩阵液晶器件的方法
公开(公告)号：US6066516A
公开(公告)日：2000-05-23
申请号：US776545
申请日：1997-01-31
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H01L21/20 , H01L31/18 , H01L21/00
CPC分类号： H01L21/2022 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perform a second annealing process consisting of rapid thermal annealing. This enables the formation of a high quality crystalline semiconductor film with high throughput but without subjecting the substrate to undue thermal stress. When this invention is applied to thin film transistors, good transistors having high performance are easily fabricated. When this invention is applied to solar cells, energy conversion efficiency is increased.
摘要翻译： PCT No.PCT / JP96 / 01775 Sec。 371日期1997年1月31日 102（e）1997年1月31日PCT PCT 1996年6月26日PCT公布。公开号WO97 / 01863 日期1997年1月16日可以通过在廉价的传统基板上形成半导体膜来形成晶体半导体层。接下来，进行第一退火处理，其中半导体膜的几乎整个表面暴露于激光照射或其他形式的照射，然后执行由快速热退火组成的第二退火工艺。这使得能够形成具有高生产能力的高质量结晶半导体膜，但不使基板受到不适当的热应力。当将本发明应用于薄膜晶体管时，容易制造具有高性能的良好晶体管。当本发明应用于太阳能电池时，能量转换效率提高。

28. 发明授权

US5834827A Thin film semiconductor device, fabrication method thereof, electronic device and its fabrication method 失效
标题翻译：薄膜半导体器件及其制造方法，电子器件及其制造方法
公开(公告)号：US5834827A
公开(公告)日：1998-11-10
申请号：US748835
申请日：1996-11-14
申请人： Mitsutoshi Miyasaka , Kiyofumi Kitawada , Minoru Matsuo , Seiichiro Higashi , Tokuroh Ozawa , Satoshi Takenaka , Yojiro Matsueda , Takashi Nakazawa , Hiroyuki Ohshima , Satoshi Inoue
发明人： Mitsutoshi Miyasaka , Kiyofumi Kitawada , Minoru Matsuo , Seiichiro Higashi , Tokuroh Ozawa , Satoshi Takenaka , Yojiro Matsueda , Takashi Nakazawa , Hiroyuki Ohshima , Satoshi Inoue
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L29/786 , H01L23/54
CPC分类号： H01L29/66757 , H01L21/28079 , H01L29/4908 , H01L29/78675
摘要： Electronic devices are provided with electrically conductive interconnections which are formed on the insulator material. Such electronic devices include, for example, thin film semiconductor devices (TFT), metal-insulator-metallic type non-wiring elements (MIM), solar cells, Large Scale Integration devices (LSI) or printed-wiring boards. At least a part of the electrically conductive interconnections are made of .alpha.-structure tantalum (Ta) which contains hydrogen. The .alpha.-structure tantalum does not have cubical crystals in its crystal system, but rather has body-centered cubes (bcc). The resistivity of the .alpha.-structure tantalum is from about 20 .mu..OMEGA. centimeters to about 60 .mu..OMEGA. centimeters. When hydrogen is included within this .alpha.-structure tantalum film, small amounts of nitrogen may be contained along with the hydrogen in the film. When a semiconductor layer is directly formed on the lower conductive layer, the upper conductive layer contains, as a primary component, the hydrogen contained .alpha.-structure tantalum.
摘要翻译：电子设备设置有形成在绝缘体材料上的导电互连。这种电子器件包括例如薄膜半导体器件（TFT），金属 - 绝缘体 - 金属型非布线元件（MIM），太阳能电池，大规模集成器件（LSI）或印刷电路板。至少一部分导电互连由含有氢的α结构钽（Ta）制成。 α结构钽在其晶体系统中不具有立方晶体，而是具有以体积为中心的立方体（bcc）。 α结构钽的电阻率为约20微米欧米算至约60微米欧米加厘米。当在该α结构钽膜中包含氢时，可能含有少量的氮以及膜中的氢。当半导体层直接形成在下导电层上时，上导电层含有含氢的α结构钽作为主要成分。

29. 发明授权

US5504019A Method for fabricating a thin film semiconductor 失效
标题翻译：薄膜半导体制造方法
公开(公告)号：US5504019A
公开(公告)日：1996-04-02
申请号：US271861
申请日：1994-07-07
申请人： Mitsutoshi Miyasaka , Thomas W. Little
发明人： Mitsutoshi Miyasaka , Thomas W. Little
IPC分类号： H01L21/30 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/786
CPC分类号： H01L29/66757 , H01L21/3003 , H01L29/4908 , H01L29/78675 , Y10S148/017 , Y10S148/122 , Y10S148/15 , Y10S438/906
摘要： There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
摘要翻译：公开了一种半导体器件，其包括在至少具有由绝缘材料形成的表面的基板上形成的硅膜，所述硅膜在低于600℃的温度下被热处理，并部分地涂覆有形成的氧化硅膜通过电子回旋共振等离子体CVD。

30. 发明授权

US5372958A Process for fabricating a thin film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US5372958A
公开(公告)日：1994-12-13
申请号：US792436
申请日：1991-11-15
申请人： Mitsutoshi Miyasaka , Thomas W. Little
发明人： Mitsutoshi Miyasaka , Thomas W. Little
IPC分类号： H01L21/30 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/265
CPC分类号： H01L29/66757 , H01L21/3003 , H01L29/4908 , H01L29/78675 , Y10S148/017 , Y10S148/122 , Y10S148/15 , Y10S438/906
摘要： There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
摘要翻译：公开了一种半导体器件，其包括在至少具有由绝缘材料形成的表面的基板上形成的硅膜，所述硅膜在低于600℃的温度下被热处理，并部分地涂覆有形成的氧化硅膜通过电子回旋共振等离子体CVD。

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