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21. 发明授权

US06291721B1 Processes for the preparation of 2-arylvinyl alkyl ether and 1,4-diaryl-2-fluoro-2-butene compounds 失效
标题翻译：制备2-芳基乙烯基烷基醚和1,4-二芳基-2-氟-2-丁烯化合物的方法
公开(公告)号：US06291721B1
公开(公告)日：2001-09-18
申请号：US09373262
申请日：1999-08-12
申请人： Yulin Hu , David Allen Hunt , Weiguo Liu
发明人： Yulin Hu , David Allen Hunt , Weiguo Liu
IPC分类号： C07C4100
CPC分类号： C07C41/01 , C07C41/20 , C07C41/28 , C07C41/30 , C07C41/56 , C07C2601/02 , C07C43/313 , C07C43/225 , C07C43/215 , C07C43/29 , C07C43/295
摘要： An improved process for the preparation of 2-arylvinyl alkyl ether compounds of the structural formula I In addition, the present invention provides an improved process for the preparation of 1,4-diaryl-2-fluoro-2-butene compounds of the structural formula V
摘要翻译：用于制备结构式I的2-芳基乙烯基烷基醚化合物的改进方法此外，本发明提供了制备结构式Ⅴ的1,4-二芳基-2-氟-2-丁烯化合物的改进方法

22. 发明授权

US11161854B2 Indazolyl-spiro[2.2]pentane-carbonitrile derivatives as LRRK2 inhibitors, pharmaceutical compositions, and uses thereof 有权
公开(公告)号：US11161854B2
公开(公告)日：2021-11-02
申请号：US16755172
申请日：2018-10-08
申请人： Merck Sharp & Dohme Corp. , David Annunziato Candito , Thomas H. Graham , John Acton , Ryan Wing-Kun Chau , Joanna L. Chen , J. Michael Ellis , Peter H. Fuller , Anmol Gulati , Hakan Gunaydin , Solomon Kattar , Mitchell Henry Keylor , Blair T. Lapointe , Ping Liu , Weiguo Liu , Joey L. Methot , Santhosh F. Neelamkavil , Vladimir Simov , Ling Tong , Harold B. Wood
发明人： David Annunziato Candito , Thomas H. Graham , John Acton , Ryan Wing-Kun Chau , Joanna L. Chen , J. Michael Ellis , Peter H. Fuller , Anmol Gulati , Hakan Gunaydin , Solomon Kattar , Mitchell Henry Keylor , Blair T. Lapointe , Ping Liu , Weiguo Liu , Joey L. Methot , Santhosh F. Neelamkavil , Vladimir Simov , Ling Tong , Harold B. Wood
IPC分类号： C07D491/10 , C07D401/14 , C07D403/04 , C07D403/14 , C07D405/14 , C07D413/14 , C07D487/08 , C07D498/04 , C07D498/10 , C07D519/00
摘要： The present invention is directed to substituted certain reversed indazolyl-spiro[2.2]pentane-carbonitrile derivatives of Formula (I): and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, X, Y, and Z are as defined herein, which are potent inhibitors of LRRK2 kinase and may be useful in the treatment or prevention of diseases in which the LRRK2 kinase is involved, such as Parkinson's Disease and other diseases and disorders described herein. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which LRRK-2 kinase is involved.

23. 发明申请

US20110293890A1 Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers 有权
标题翻译：低蚀刻坑密度（EPD）半绝缘III-V晶片
公开(公告)号：US20110293890A1
公开(公告)日：2011-12-01
申请号：US13207291
申请日：2011-08-10
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： C30B11/02 , B32B3/00
CPC分类号： C30B11/00 , C30B29/42 , H01L21/3228 , Y10T428/24372
摘要： Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.
摘要翻译：公开了使用低EPD晶体生长工艺制造晶圆的系统和方法，并且提供晶片退火工艺，从而产生从晶片提供更高的器件产量的III-V / GaAs晶片。在一个示例性实施方案中，提供了制造具有低蚀刻坑密度（EPD）的基于III族的材料的方法。此外，该方法包括形成多晶III族化合物，并使用多晶III族化合物进行垂直梯度冷冻晶体生长。其它示例性实施方案可以包括在形成基于III族的晶体期间控制温度梯度以提供非常低的蚀刻坑密度。

24. 发明申请

US20110238486A1 Optimizing Sponsored Search Ad Placement for Online Advertising 审中-公开
标题翻译：优化在线广告的赞助搜索广告刊登位置
公开(公告)号：US20110238486A1
公开(公告)日：2011-09-29
申请号：US12749372
申请日：2010-03-29
申请人： Weiguo Liu , Jinlin Wang
发明人： Weiguo Liu , Jinlin Wang
IPC分类号： G06Q30/00 , G06Q10/00
CPC分类号： G06Q30/0243 , G06Q30/02 , G06Q30/0244
摘要： A method and a system are provided for optimizing sponsored search ad placement for online advertising. In one example, the system obtains advertiser bid amount information. The system obtains advertiser bid amount information. The bid amount information allows determination of amounts that advertisers will pay per user click on ads served in association with advertiser bids. The advertiser bid amounts are associated with advertising campaigns. The system obtains click-through-rate information associated with at least some of the ads. The system obtains budget information associated with the advertising campaign. The budget information specifies a maximum advertiser spending over a period of time in association with at least a portion of the advertising campaign. The system ranks a set of ads to be served based on the bid amount information, the click-through-rate information, and/or the budget information. The system optimizes ad placement of the set of ads by eliminating one or more keywords. The system then facilitates serving of the set of ads in accordance with at least one of the ranking of the set of ads and the optimizing of the ad placement.
摘要翻译：提供了一种方法和系统，用于优化在线广告的赞助搜索广告展示位置。在一个示例中，系统获得广告商投标金额信息。系统获取广告客户投标金额信息。投标金额信息允许确定广告客户将按照广告客户出价关联广告投放的广告点击付费的金额。广告客户出价金额与广告系列相关联。该系统获得与至少一些广告相关联的点击率信息。该系统获得与广告活动相关联的预算信息。预算信息指定与至少一部分广告活动相关联的一段时间内的广告客户支出的最大值。系统根据出价金额信息，点击率信息和/或预算信息对一组要投放的广告进行排序。该系统通过删除一个或多个关键字来优化该组广告的广告展示位置。该系统然后根据该组广告的排名和广告展示位置的优化中的至少一个来促进该组广告的投放。

25. 发明授权

US07371885B2 Cis-trans isomerisation of semicarbazone compounds 失效
标题翻译：缩氨基脲化合物的顺反异构化
公开(公告)号：US07371885B2
公开(公告)日：2008-05-13
申请号：US10578465
申请日：2004-11-12
申请人： Weiguo Liu , Philip Harrington
发明人： Weiguo Liu , Philip Harrington
IPC分类号： C07C281/14 , C07B57/00
CPC分类号： C07C281/14
摘要： The present invention relates to the isomerization of the Z-isomer I-Z of semicarbazone compounds of the general formula (I) into its E-isomer I-E, where the variables in formula (I) have meanings given in claim 1
摘要翻译：本发明涉及通式（I）的缩氨基脲化合物的Z-异构体I-Z异构化为其E-异构体I-E，其中式（I）中的变量具有权利要求1中给出的含义

26. 发明授权

US06365380B2 Method for stereoselectively inverting a chiral center of a chemical compound using an enzyme and a metal catalyst 失效
标题翻译：使用酶和金属催化剂立体选择性地反转化合物的手性中心的方法
公开(公告)号：US06365380B2
公开(公告)日：2002-04-02
申请号：US09766762
申请日：2001-01-22
申请人： Weiguo Liu , Scott Laneman , David John Ager , Paul Phillip Taylor
发明人： Weiguo Liu , Scott Laneman , David John Ager , Paul Phillip Taylor
IPC分类号： C12P1304
CPC分类号： C12N9/0022 , C12N9/88 , C12P13/04 , C12P41/002
摘要： A process for stereoselectively inverting a chiral center of a chemical compound is disclosed. The process first consists of forming a mixture of the chemical comopund, an enzymatic system, and a metal catalyst. Next, the process stereoselectively dehydrogenates a group attached to the chiral center with the enzymatic system in the presence of an oxidant to produce a dehydrogenated group, Lastly, the process hydrogenates the dehydrogenated group with the metal catalyst in the presence of a hydrogen source to stereoselectively invert the chiral center of the chemical compound.
摘要翻译：公开了一种立体选择性反转化合物的手性中心的方法。该方法首先由化学共混物，酶系统和金属催化剂的混合物组成。接下来，该方法在氧化剂存在下用酶系统立即选择性地脱附连接到手性中心的基团以产生脱氢基团。最后，该方法在氢源存在下用金属催化剂将脱氢基团氢化成立体选择性反转化合物的手性中心。

27. 外观设计

USD1029701S1 Rollator 有权
公开(公告)号：USD1029701S1
公开(公告)日：2024-06-04
申请号：US29929659
申请日：2024-02-23
申请人： Weiguo Liu
设计人： Weiguo Liu
摘要： FIG. 1 is a perspective view of a rollator showing the new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevation view thereof;
FIG. 4 is a back elevation view thereof;
FIG. 5 is a left-side view thereof;
FIG. 6 is a right-side view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken lines depict portions of the rollator that form no part of the claimed design.

28. 发明申请

US20210188863A1 INDAZOLYL-SPIRO[2.2]PENTANE-CARBONITRILE DERIVATIVES AS LRRK2 INHIBITORS, PHARMACEUTICAL COMPOSITIONS, AND USES THEREOF 有权
公开(公告)号：US20210188863A1
公开(公告)日：2021-06-24
申请号：US16755172
申请日：2018-10-08
申请人： David Annunziato CANDITO , Thomas, H. GRAHAM , John ACTON , Ryan Wing-Kun CHAU , Joanna L. CHEN , J. Michael ELLIS , Peter H. FULLER , Anmol GULATI , Hakan GUNAYDIN , Solomon KATTAR , Mitchell Henry KEYLOR , Blair T. LAPOINTE , Ping LIU , Weiguo LIU , Joey L. METHOT , Santhosh F. NEELAMKAVIL , Vladimir SIMOV , Ling TONG , Harold B. WOOD , Merck Sharp & Dohme Corp.
发明人： David Annunziato Candito , Thomas H. Graham , John Acton , Ryan Wing-Kun Chau , Joanna L. Chen , J. Michael Ellis , Peter H. Fuller , Anmol Gulati , Hakan Gunaydin , Solomon Kattar , Mitchell Henry Keylor , Blair T. Lapointe , Ping Liu , Weiguo Liu , Joey L. Methot , Santhosh F. Neelamkavil , Vladimir Simov , Ling Tong , Harold B. Wood
IPC分类号： C07D491/10 , C07D403/14 , C07D487/08 , C07D405/14 , C07D401/14 , C07D413/14 , C07D498/10 , C07D519/00 , C07D498/04 , C07D403/04
摘要： The present invention is directed to substituted certain reversed indazolyl-spiro[2.2]pentane-carbonitrile derivatives of Formula (I): and pharmaceutically acceptable salts thereof, wherein R1, R2, R3, X, Y, and Z are as defined herein, which are potent inhibitors of LRRK2 kinase and may be useful in the treatment or prevention of diseases in which the LRRK2 kinase is involved, such as Parkinson's Disease and other diseases and disorders described herein. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which LRRK-2 kinase is involved.

29. 发明授权

US08647433B2 Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same 有权
标题翻译：具有低微坑密度（MPD）的锗锭/晶片以及其制造方法
公开(公告)号：US08647433B2
公开(公告)日：2014-02-11
申请号：US12636778
申请日：2009-12-13
申请人： Weiguo Liu , Xiao Li
发明人： Weiguo Liu , Xiao Li
IPC分类号： C30B21/02
CPC分类号： C30B29/08 , C30B11/10
摘要： Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.
摘要翻译：公开了用于晶体生长的系统和方法，包括减少生长的锗晶体中微孔密度的特征。在一个示例性实施方式中，提供了将具有原料的安瓿插入具有加热源的炉中的方法，使用垂直生长方法生长晶体，其中实现相对于原料/坩埚的结晶温度梯度的移动到熔化原料，并以预定的晶体生长长度生长以获得单晶晶体的材料，其中可重复地提供具有降低的微坑密度的单晶锭。

30. 发明授权

US08506706B2 Systems, methods and substrates of monocrystalline germanium crystal growth 有权
标题翻译：单晶锗晶体生长的系统，方法和衬底
公开(公告)号：US08506706B2
公开(公告)日：2013-08-13
申请号：US12554902
申请日：2009-09-05
申请人： Weiguo Liu
发明人： Weiguo Liu
IPC分类号： C30B21/02
CPC分类号： C30B29/08 , C30B11/00 , C30B11/003 , C30B11/02 , Y10T117/1024
摘要： Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics.
摘要翻译：公开了涉及单晶锗（Ge）晶体生长的系统，方法和衬底。在一个示例性实施方案中，提供了用于生长单晶锗（Ge）晶体的方法。此外，该方法可以包括将第一原料Ge材料加载到坩埚中，将第二原料Ge材料加载到用于补充Ge熔体材料的容器中，将坩埚和容器密封在安瓿中，将安瓿与坩埚放置成晶体生长炉子，以及熔化第一和第二原始锗材料并控制熔体的结晶温度梯度以可重复地提供具有改进/期望特性的单晶锗锭。

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