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    • 28. 发明授权
    • Device under test de-embedding
    • 被测设备去嵌入
    • US07920987B2
    • 2011-04-05
    • US12037333
    • 2008-02-26
    • Shun-Meen KuoMarcel N. Tutt
    • Shun-Meen KuoMarcel N. Tutt
    • G21C17/00
    • G01R31/2822G01R27/28
    • A method of determining the intrinsic electrical characteristics of a device under test (DUT) includes determining a set of test measurements for a test structure including the device and determining test measurements for a number of de-embedding test structures. Based on the test measurements, DUT measurements are determined using both open-short and three-step de-embedding processes. The DUT measurements are combined to determine an imperfection error, which is used to adjust the calculations of a four-port de-embedding method. The adjusted calculations provide for a more accurate measurement of the parasitic elements in the test structure, thereby improving the determination of the intrinsic electrical characteristics of the device.
    • 确定被测设备(DUT)的固有电特性的方法包括确定包括设备的测试结构的测试测量集合以及确定多个解嵌测试结构的测试测量结果。 基于测试测量,使用开放式和三步式去嵌入处理来确定DUT测量。 DUT测量被组合以确定不完美误差,其用于调整四端口去嵌入方法的计算。 经调整的计算提供了对测试结构中的寄生元件的更精确的测量,从而改进了器件的固有电特性的确定。
    • 29. 发明申请
    • DEVICE UNDER TEST DE-EMBEDDING
    • 测试去嵌入设备
    • US20090216480A1
    • 2009-08-27
    • US12037333
    • 2008-02-26
    • Shun-Meen KuoMarcel N. Tutt
    • Shun-Meen KuoMarcel N. Tutt
    • G01R31/28
    • G01R31/2822G01R27/28
    • A method of determining the intrinsic electrical characteristics of a device under test (DUT) includes determining a set of test measurements for a test structure including the device and determining test measurements for a number of de-embedding test structures. Based on the test measurements, DUT measurements are determined using both open-short and three-step de-embedding processes. The DUT measurements are combined to determine an imperfection error, which is used to adjust the calculations of a four-port de-embedding method. The adjusted calculations provide for a more accurate measurement of the parasitic elements in the test structure, thereby improving the determination of the intrinsic electrical characteristics of the device.
    • 确定被测设备(DUT)的固有电特性的方法包括确定包括设备的测试结构的测试测量集合以及确定多个解嵌测试结构的测试测量结果。 基于测试测量,使用开放式和三步式去嵌入处理来确定DUT测量。 DUT测量被组合以确定不完美误差,其用于调整四端口去嵌入方法的计算。 经调整的计算提供了对测试结构中的寄生元件的更精确的测量,从而改进了器件的固有电特性的确定。