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    • 21. 发明申请
    • Apparatus and method for remotely diagnosing laryngeal disorder/laryngeal state using speech codec
    • 使用语音编解码器远程诊断喉部疾病/喉部状态的装置和方法
    • US20060129390A1
    • 2006-06-15
    • US11177261
    • 2005-07-08
    • Hyun-Woo KimDo-Young Kim
    • Hyun-Woo KimDo-Young Kim
    • G10L19/08
    • G10L17/26G10L25/90G10L2025/903
    • Provided is an apparatus and method for remotely diagnosing laryngeal disorder/laryngeal state by using the speech codec. The apparatus provides a remote larynx diagnosing apparatus and method deciding laryngeal disorder/laryngeal state by using parameters, such as a Linear Prediction Coefficient (LPC) and a pitch, which are transmitted from a system using a speech codec. The apparatus includes a user information/speech codec information collecting block; a parameter extracting block for extracting the diagnosis parameter in bitstream transmitted from the network; a storing block for pre-storing a diagnosis parameter considering the type of the speech codec and a bit rate; a parameter comparing block for comparing the diagnosis parameter extracted from the parameter extracting block with the information of storing block; and a laryngeal disorder/laryngeal state determining block for diagnosing presence of laryngeal disorder/laryngeal state.
    • 提供了一种通过使用语音编解码器远程诊断喉部疾病/喉部状态的装置和方法。 该装置通过使用从使用语音编解码器的系统发送的诸如线性预测系数(LPC)和音调的参数来提供远程喉部诊断装置和方法来确定喉部疾病/喉部状态。 该装置包括用户信息/语音编解码信息收集块; 参数提取块,用于提取从网络发送的比特流中的诊断参数; 存储块,用于考虑所述语音编解码器的类型和比特率来预存储诊断参数; 参数比较块,用于将从参数提取块提取的诊断参数与存储块的信息进行比较; 以及用于诊断喉部疾病/喉部状态存在的喉部疾病/喉癌状态。
    • 23. 发明授权
    • Reading method of non-volatile memory device
    • 非易失性存储器件的读取方法
    • US09159436B2
    • 2015-10-13
    • US13620466
    • 2012-09-14
    • Do-Young Kim
    • Do-Young Kim
    • G11C16/26G11C16/24G11C16/34
    • G11C16/26G11C16/24G11C16/3418
    • A non-volatile memory device includes a first selection transistor, a second selection transistor, and a plurality of memory cells serially coupled between the first selection transistor and the second selection transistor. A reading method of the non-volatile memory device includes applying a read voltage to a gate of a selected memory cell; applying a first pass voltage to a gate of a memory cell adjacent to the selected memory cell, and applying a second pass voltage to gates of the other memory cells, wherein the selected memory cell is in one program state among first to Tth program states in a direction that threshold voltage is increased, where T is a natural number greater than 2, and the first pass voltage is decreased as the selected memory cell goes toward the Tth program state.
    • 非易失性存储器件包括第一选择晶体管,第二选择晶体管和串联耦合在第一选择晶体管和第二选择晶体管之间的多个存储单元。 非易失性存储器件的读取方法包括将读取电压施加到所选存储单元的栅极; 对与所选择的存储单元相邻的存储单元的栅极施加第一通过电压,以及向其它存储单元的栅极施加第二通过电压,其中所选择的存储单元在第一至第T程序状态中处于一个程序状态 阈值电压增加的方向,其中T是大于2的自然数,并且随着所选择的存储器单元朝向第T编程状态,第一通过电压减小。