专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20110108792A1 Single Crystal Phase Change Material 审中-公开
标题翻译：单晶相变材料
公开(公告)号：US20110108792A1
公开(公告)日：2011-05-12
申请号：US12616492
申请日：2009-11-11
申请人： Chung Hon Lam , Alejandro G. Schrott , Chieh-Fang Chen
发明人： Chung Hon Lam , Alejandro G. Schrott , Chieh-Fang Chen
IPC分类号： H01L45/00 , H01L21/28
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole.
摘要翻译：制造相变存储器（PCM）单元的方法包括在电极上形成电介质层，所述电极包括电极材料; 在电介质层中形成通孔，使得通孔向下延伸到电极; 以及在通孔中的电极上生长相变材料的单晶。相变存储器（PCM）单元包括包括电极材料的电极; 电极上的电介质层; 介电层中的通孔; 以及位于通孔中的相变材料的单晶，单晶与通孔底部的电极接触。

22. 发明申请

US20100091558A1 Dielectric-Sandwiched Pillar Memory Device 有权
标题翻译：介质三通支柱存储器件
公开(公告)号：US20100091558A1
公开(公告)日：2010-04-15
申请号：US12249178
申请日：2008-10-10
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C5/063 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C2213/34 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A memory device includes bottom and top electrode structures and a memory cell therebetween. The memory cell comprises bottom and top memory elements and a dielectric element therebetween. A lower resistance conduction path is formed through the dielectric element. The dielectric element may have an outer edge and a central portion, the outer edge being thicker than the central portion. To make a memory device, an electrical pulse is applied through the memory cell to form a conduction path through the dielectric element. A passivation element may be formed by oxidizing the outer surface of the memory cell which may also enlarge the outer edge of the dielectric element.
摘要翻译：存储器件包括底部和顶部电极结构以及它们之间的存储单元。存储单元包括底部和顶部存储器元件以及它们之间的介电元件。通过介电元件形成较低的电阻传导路径。电介质元件可以具有外边缘和中心部分，外边缘比中心部分厚。为了制造存储器件，通过存储器单元施加电脉冲以形成穿过介质元件的传导路径。可以通过氧化存储单元的外表面来形成钝化元件，该外表面也可以增大电介质元件的外边缘。

23. 发明授权

US08537609B2 Memory device and method of operating the same 有权
标题翻译：存储器件及其操作方法
公开(公告)号：US08537609B2
公开(公告)日：2013-09-17
申请号：US13161129
申请日：2011-06-15
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： G11C11/34
CPC分类号： G11C8/08 , G11C8/10 , G11C11/005 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0073
摘要： A memory device is provided. The memory device includes a memory array; a first circuit electrically connected to the memory array, and causing the memory array to be operated in a first mode; and a second circuit electrically connected to the memory array, and causing the memory array to be operated in a second mode.
摘要翻译：提供存储器件。存储器件包括存储器阵列; 电连接到存储器阵列的第一电路，并使存储器阵列以第一模式工作; 以及电连接到存储器阵列的第二电路，并且使存储器阵列以第二模式工作。

24. 发明授权

US08064247B2 Rewritable memory device based on segregation/re-absorption 有权
标题翻译：基于分离/再吸收的可重写存储器件
公开(公告)号：US08064247B2
公开(公告)日：2011-11-22
申请号：US12488795
申请日：2009-06-22
申请人： Ming-Hsiu Lee , Chieh-Fang Chen , Yen-Hao Shih , Yu Zhu
发明人： Ming-Hsiu Lee , Chieh-Fang Chen , Yen-Hao Shih , Yu Zhu
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0071 , G11C2013/009 , G11C2013/0092 , G11C2213/33 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of a memory material to establish a high resistance state, and by re-absorption of at least a portion of the electrically insulating layer into the memory material to establish a low resistance state. The physical mechanism of programming and erasing includes movement of structure vacancies to form voids, and/or segregation of doping material and bulk material, to create the electrically insulating layer consisting of voids and/or dielectric doping material along an inter-electrode current path between electrodes.
摘要翻译：通过将电绝缘层从存储材料中物理分离出来以建立高电阻状态，并且通过将电绝缘层的至少一部分再吸收到存储材料中以建立低电阻状态。编程和擦除的物理机制包括结构空位的移动以形成空隙，和/或掺杂材料和体材料的偏析，以产生由空隙和/或介电掺杂材料构成的电绝缘层，沿着电极间电流通路电极。

25. 发明授权

US08779408B2 Phase change memory cell structure 有权
标题翻译：相变存储单元结构
公开(公告)号：US08779408B2
公开(公告)日：2014-07-15
申请号：US13436203
申请日：2012-03-30
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： H01L47/00
CPC分类号： H01L45/1273 , G11C13/0004 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.
摘要翻译：本文所述的存储单元包括存储元件，其包括覆盖导电触点的可编程电阻存储器材料。绝缘体元件包括从导电触点延伸到存储元件中的管状部分，管形部分具有近端和远端以及限定内部的内表面，近端与导电触点相邻。底部电极接触导电接触并在内部从近端向远端向上延伸，底部电极具有在第一接触表面处与远端相邻的顶表面接触存储元件。顶部电极通过存储元件与管状部分的远端分离，并在第二接触表面处接触存储元件，第二接触表面的表面积大于第一接触表面的表面积。

26. 发明授权

US08263960B2 Phase change memory cell with filled sidewall memory element and method for fabricating the same 有权
标题翻译：具有填充侧壁存储元件的相变存储单元及其制造方法
公开(公告)号：US08263960B2
公开(公告)日：2012-09-11
申请号：US12978846
申请日：2010-12-27
申请人： Hsiang-Lan Lung , Chieh-Fang Chen
发明人： Hsiang-Lan Lung , Chieh-Fang Chen
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1691
摘要： Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.
摘要翻译：描述存储单元以及制造方法。本文所述的存储单元包括底部电极，覆盖底部电极的顶部电极，具有从底部电极延伸到顶部电极的侧壁的通孔，以及将底部电极电连接到顶部电极的存储元件。存储元件具有接触通孔侧壁上的电介质侧壁间隔件的外表面，并且包括底部电极上的杆部分和杆部分上的杯部分。填充材料在由存储元件的杯部的内表面限定的内部内。

27. 发明申请

US20120187362A1 Phase Change Memory Cell Structure 有权
标题翻译：相变存储单元结构
公开(公告)号：US20120187362A1
公开(公告)日：2012-07-26
申请号：US13436203
申请日：2012-03-30
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： H01L45/00
CPC分类号： H01L45/1273 , G11C13/0004 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.
摘要翻译：本文所述的存储单元包括存储元件，其包括覆盖导电触点的可编程电阻存储器材料。绝缘体元件包括从导电触点延伸到存储元件中的管状部分，管形部分具有近端和远端以及限定内部的内表面，近端与导电触点相邻。底部电极接触导电接触并在内部从近端向远端向上延伸，底部电极具有在第一接触表面处与远端相邻的顶表面接触存储元件。顶部电极通过存储元件与管状部分的远端分离，并在第二接触表面处接触存储元件，第二接触表面的表面积大于第一接触表面的表面积。

28. 发明授权

US08198619B2 Phase change memory cell structure 有权
标题翻译：相变存储单元结构
公开(公告)号：US08198619B2
公开(公告)日：2012-06-12
申请号：US12534599
申请日：2009-08-03
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： H01L47/00
CPC分类号： H01L45/1273 , G11C13/0004 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/148
摘要： A memory cell described herein includes a memory element comprising programmable resistance memory material overlying a conductive contact. An insulator element includes a pipe shaped portion extending from the conductive contact into the memory element, the pipe shaped portion having proximal and distal ends and an inside surface defining an interior, the proximal end adjacent the conductive contact. A bottom electrode contacts the conductive contact and extends upwardly within the interior from the proximal end to the distal end, the bottom electrode having a top surface contacting the memory element adjacent the distal end at a first contact surface. A top electrode is separated from the distal end of the pipe shaped portion by the memory element and contacts the memory element at a second contact surface, the second contact surface having a surface area greater than that of the first contact surface.
摘要翻译：本文所述的存储单元包括存储元件，其包括覆盖导电触点的可编程电阻存储器材料。绝缘体元件包括从导电触点延伸到存储元件中的管状部分，管形部分具有近端和远端以及限定内部的内表面，近端与导电触点相邻。底部电极接触导电接触并在内部从近端向远端向上延伸，底部电极具有在第一接触表面处与远端相邻的顶表面接触存储元件。顶部电极通过存储元件与管状部分的远端分离，并在第二接触表面处接触存储元件，第二接触表面的表面积大于第一接触表面的表面积。

29. 发明授权

US08059449B2 Phase change device having two or more substantial amorphous regions in high resistance state 有权
标题翻译：具有两个或多个具有高电阻状态的实质非晶区域的相变装置
公开(公告)号：US08059449B2
公开(公告)日：2011-11-15
申请号：US12717850
申请日：2010-03-04
申请人： Yen-Hao Shih , Chieh-Fang Chen , Hsiang-Lan Lung
发明人： Yen-Hao Shih , Chieh-Fang Chen , Hsiang-Lan Lung
IPC分类号： G11C11/00
CPC分类号： H01L45/126 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
摘要翻译：这里描述了存储器件以及用于操作存储器件的方法。如本文所述的存储单元包括第一电极和第二电极。存储单元还包括具有沿第一和第二电极之间的电极间电流路径串联布置的第一和第二有源区的相变材料。

30. 发明授权

US07897954B2 Dielectric-sandwiched pillar memory device 有权
标题翻译：电介质夹柱存储器件
公开(公告)号：US07897954B2
公开(公告)日：2011-03-01
申请号：US12249178
申请日：2008-10-10
申请人： Ming-Hsiu Lee , Chieh-Fang Chen
发明人： Ming-Hsiu Lee , Chieh-Fang Chen
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： G11C5/063 , G11C11/5664 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C2213/34 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A memory device includes bottom and top electrode structures and a memory cell therebetween. The memory cell comprises bottom and top memory elements and a dielectric element therebetween. A lower resistance conduction path is formed through the dielectric element. The dielectric element may have an outer edge and a central portion, the outer edge being thicker than the central portion. To make a memory device, an electrical pulse is applied through the memory cell to form a conduction path through the dielectric element. A passivation element may be formed by oxidizing the outer surface of the memory cell which may also enlarge the outer edge of the dielectric element.
摘要翻译：存储器件包括底部和顶部电极结构以及它们之间的存储单元。存储单元包括底部和顶部存储器元件以及它们之间的介电元件。通过介电元件形成较低的电阻传导路径。电介质元件可以具有外边缘和中心部分，外边缘比中心部分厚。为了制造存储器件，通过存储器单元施加电脉冲以形成穿过介质元件的传导路径。可以通过氧化存储单元的外表面来形成钝化元件，该外表面也可以增大电介质元件的外边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式