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21. 发明授权

US5495792A Double acting hydraulic cylinder with improved lubrication and piston rod guides 失效
标题翻译：双作用液压缸具有改进的润滑和活塞杆导向
公开(公告)号：US5495792A
公开(公告)日：1996-03-05
申请号：US256325
申请日：1994-09-30
申请人： Akira Izumi , Toshiyuki Takeuchi
发明人： Akira Izumi , Toshiyuki Takeuchi
IPC分类号： B62D5/10 , B62D5/12 , F15B15/14 , F16J15/18
CPC分类号： F15B15/1433 , B62D5/12 , F15B15/149
摘要： Disclosed is a double piston rod type hydraulic cylinder having a pair of pressure chambers containing piston rods that reciprocate in response to changes of the pressure of hydraulic fluid contained in both pressure chambers. This hydraulic cylinder is used in, for example, a rear axle steering cylinder for industrial vehicles utilizing hydraulic power steering. Bushings are provided between the piston rod and a pair of rod guides that permit the sliding of the piston rod. Oil grooves are formed in the inner surfaces of the rod guide to connect oil inlet ports to the pressure chambers.
摘要翻译： PCT No.PCT / JP93 / 01630 Sec。 371日期1994年9月30日 102（e）1994年9月30日PCT 1993年11月10日PCT公布。出版物WO94 / 11232 日期为1994年5月26日。公开是具有一对压力室的双活塞杆式液压缸，其包含响应于两个压力室中包含的液压流体的压力变化而往复运动的活塞杆。该液压缸用于例如利用液压动力转向的工业车辆的后桥转向缸。在活塞杆和允许活塞杆滑动的一对杆引导件之间设有衬套。在导杆的内表面形成有油槽，以将进油口连接到压力室。

22. 发明授权

US08696825B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08696825B2
公开(公告)日：2014-04-15
申请号：US13336729
申请日：2011-12-23
申请人： Katsuhiko Miya , Akira Izumi
发明人： Katsuhiko Miya , Akira Izumi
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67028 , Y10S134/902
摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.
摘要翻译：从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印。

23. 发明授权

US08029622B2 Substrate processing apparatus, liquid film freezing method and substrate processing method 有权
标题翻译：基板处理装置，液膜冷冻法和基板处理方法
公开(公告)号：US08029622B2
公开(公告)日：2011-10-04
申请号：US11837575
申请日：2007-08-13
申请人： Katsuhiko Miya , Naozumi Fujiwara , Akira Izumi
发明人： Katsuhiko Miya , Naozumi Fujiwara , Akira Izumi
IPC分类号： B08B5/00
CPC分类号： B08B7/0014 , H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L21/67109 , Y10S134/902
摘要： A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.
摘要翻译：冷却气体从冷却气体排出喷嘴朝向其上形成有液膜的基板的前表面的局部部分排出。然后冷却气体排出喷嘴在基板旋转的同时沿着移动轨迹从基板的旋转中心位置朝向基板的边缘位置移动。结果，在基板的前表面的表面区域中，液膜已被冷冻的区域（冻结区域）从基板的前表面的中心朝向周边边缘扩展。因此，可以在抑制基板周边部件的耐久性劣化的同时在基板的正面上形成冷冻膜，因为冷却气体的供应部分被限制在基板的正面的局部区域。

24. 发明授权

US07825026B2 Method for processing copper surface, method for forming copper pattern wiring and semiconductor device manufactured using such method 有权
标题翻译：铜表面处理方法，铜图案布线形成方法和使用这种方法制造的半导体器件
公开(公告)号：US07825026B2
公开(公告)日：2010-11-02
申请号：US11569144
申请日：2005-06-03
申请人： Akira Izumi , Masamichi Ishihara
发明人： Akira Izumi , Masamichi Ishihara
IPC分类号： H01L21/44
CPC分类号： H01L21/321 , B08B7/00 , C23C8/02 , C23C8/24 , C23C8/80 , C23G5/00 , H01L21/02068 , H01L21/76838 , H01L2224/11 , H01L2224/14181 , Y10S977/773 , Y10S977/777
摘要： A gas inlet is disposed in a lower portion of a reaction chamber, a copper substrate is disposed in an upper portion thereof, and a tungsten catalytic body heated to 1600° C. is disposed midway between the two. Ammonia gas introduced from the gas inlet is decomposed by the tungsten catalytic body, a chemical species generated by the decomposition reacts with a surface of the copper substrate, and reduces and removes a contaminant on the copper surface, and a Cu3N thin film is formed on the copper substrate surface. This Cu3N film has the action of a film which prevents the oxidation of copper. This Cu3N film is thermally decomposed and removed when heated to temperatures of not less than 300° C., leaving a clean copper surface behind.
摘要翻译：气体入口设置在反应室的下部，铜基板设置在其上部，并且被加热至1600℃的钨催化体设置在两者之间的中间。从气体入口引入的氨气体被钨催化体分解，由分解生成的化学物质与铜基材的表面反应，并且还原和去除铜表面上的污染物，并且在Cu3N薄膜上形成Cu3N薄膜铜基材表面。该Cu 3 N膜具有防止铜氧化的膜的作用。当加热至不低于300℃的温度时，该Cu 3 N膜被热分解和除去，留下干净的铜表面。

25. 发明申请

US20070295365A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20070295365A1
公开(公告)日：2007-12-27
申请号：US11767902
申请日：2007-06-25
申请人： Katsuhiko Miya , Akira Izumi
发明人： Katsuhiko Miya , Akira Izumi
IPC分类号： B08B3/00 , B08B7/00
CPC分类号： H01L21/02057 , H01L21/67051
摘要： After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below. Hence, it is possible to effectively prevent destruction of the patterns while suppressing the consumption amount of
摘要翻译：冲洗后，在旋转基板的同时，从基板表面排出附着在基板表面上的冲洗液（DIW）的前层部分。然后，通过将IPA和DIW混合在一起而获得的液体混合物的基板表面供应。由于基板表面上的大部分冲洗液体从基板表面除去，所以即使在基板表面上形成微图案，液体混合物也替代附着在图案之间的间隙的液体成分。此外，供给到基板表面的液体混合物中的IPA浓度设定为50％以下。因此，可以有效地防止图案的破坏同时抑制消耗量

26. 发明申请

US20070235062A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20070235062A1
公开(公告)日：2007-10-11
申请号：US11696464
申请日：2007-04-04
申请人： Naozumi Fujiwara , Katsuhiko Miya , Akira Izumi
发明人： Naozumi Fujiwara , Katsuhiko Miya , Akira Izumi
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： H01L21/02057 , C03C23/0075 , G03F1/82 , H01L21/67028 , H01L21/67051 , H01L21/67057 , H01L21/67109
摘要： A substrate on the surface of which the liquid film is formed in a cleaning unit is transported to a freezing unit by a substrate transporting mechanism. The liquid film is frozen in the freezing unit and the volume of the liquid film increases. Accordingly, adhesive forces between the substrate and the particles are reduced and the particles even come to separate from the substrate surface. Then the substrate which has been processed freezing is transported from the freezing unit to the cleaning unit again by the substrate transporting mechanism. In the cleaning unit, a physical and/or chemical cleaning is executed to the substrate, and the frozen film is removed from the substrate surface. Thus, the liquid film formation and the freezing of the liquid film is performed as a preprocessing of the physical and/or chemical cleaning in this way, whereby the particles are removed from the substrate surface efficiently.
摘要翻译：在清洁单元中形成液膜的表面上的基板通过基板输送机构输送到冷冻单元。液膜在冷冻装置中被冷冻，液膜的体积增加。因此，衬底和颗粒之间的粘合力降低，并且颗粒甚至与衬底表面分离。然后，被处理冷冻的基板由基板输送机构再次从冷冻单元输送到清洗单元。在清洁单元中，对基板执行物理和/或化学清洁，并且将冷冻的膜从基板表面移除。因此，以这种方式进行物理和/或化学清洗的预处理，进行液膜的形成和液膜的冷冻，从而有效地从基板表面除去颗粒。

27. 发明申请

US20060130872A1 Apparatus and method for performing predetermined processing on substrate with ultrasonic waves 失效
标题翻译：用超声波对基板进行预定处理的装置和方法
公开(公告)号：US20060130872A1
公开(公告)日：2006-06-22
申请号：US11296808
申请日：2005-11-29
申请人： Akira Izumi , Kenichi Sano
发明人： Akira Izumi , Kenichi Sano
IPC分类号： B08B3/12 , B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/12
摘要： A blocking plate 3 is disposed opposing a substrate W which is held by plural chuck pins 17 and a processing liquid is supplied from a processing liquid nozzle 5 to a space SP between the front surface Wf of the substrate and an opposed surface 3a of the blocking plate 3, whereby the processing liquid attains the liquid-tight state. While the liquid-tight state with the processing liquid is maintained, the substrate W and the blocking plate 3 rotate. In this condition, a liquid (pure water) to which ultrasonic vibration has propagated is injected from an ultrasonic nozzle 7 approximately perpendicular to a side wall surface 3b of the blocking plate 3. While the ultrasonic vibration spreads inside the blocking plate 3 along the horizontal direction, some vibrational waves spread uniformly and widely from the opposed surface 3a to the processing liquid attaining the liquid-tight state and vibrate the processing liquid. This prevents concentration of the vibrational energy at the front surface Wf, which makes it possible to uniformly process the substrate W while suppressing damage to the substrate W.
摘要翻译：阻挡板3相对于由多个卡盘销17保持的基板W相对设置，并且处理液体从处理液喷嘴5供给到基板的前表面Wf和基板的相对表面3a之间的间隙SP 阻挡板3，由此处理液体达到液密状态。当保持具有处理液体的液密状态时，基板W和挡板3旋转。在这种情况下，超声波振动传播的液体（纯水）从超声波喷嘴7大致垂直于挡板3的侧壁面3b注入。当超声波振动沿着水平方向扩散到阻挡板3内时，一些振动波从相对的表面3a均匀地扩展到达到液密状态的处理液体并使处理液体振动。这防止了前表面Wf处的振动能量的集中，这使得可以在抑制基板W的损坏的同时均匀地处理基板W.

28. 发明授权

US06669808B2 Substrate processing apparatus and substrate processing method 失效
公开(公告)号：US06669808B2
公开(公告)日：2003-12-30
申请号：US10102391
申请日：2002-03-18
申请人： Hideki Adachi , Katsuhiko Miya , Akira Izumi , Itsuki Kajino
发明人： Hideki Adachi , Katsuhiko Miya , Akira Izumi , Itsuki Kajino
IPC分类号： B08B504
CPC分类号： H01L21/68728 , G03F7/3021 , H01L21/6715 , H01L21/6838
摘要： A support member of a rotary base member engages with a substrate for preventing the substrate from horizontal movement and rotation with respect to the rotary base member while allowing vertical movement of the substrate, and a proximity suction plate is provided above the rotary base member so that the lower surface thereof is formed on a plane on the rotary base member parallel to the substrate for downwardly and outwardly injecting gas toward the overall upper surface of the substrate and sucking the substrate in a proximity state by Bernoulli effect. It is possible to provide an apparatus capable of reliably preventing mist of a processing solution or the processing solution from reaching the upper surface of the substrate when rotating the substrate and supplying the processing solution to the lower surface for processing the substrate.

29. 发明授权

US06446646B1 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US06446646B1
公开(公告)日：2002-09-10
申请号：US09086650
申请日：1998-05-29
申请人： Akira Izumi
发明人： Akira Izumi
IPC分类号： B08B1700
CPC分类号： H01L21/67167 , H01L21/67017 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67253 , Y10S134/902
摘要： Chambers each include an inlet port for supplying N2 gas and an outlet port for discharging an inner atmosphere, and therefore the chambers have different amounts of supply of N2 gas in a unit of time and different amounts of discharge of inner atmosphere in a unit of time. With this structure, the first to fourth processing chambers are controlled to have the lowest inner pressure(p3), a transfer module is controlled to have an inner pressure (p2) higher than the inner pressure (p3) and a loader and an unloader are controlled to have the highest inner pressure (p1). That eliminates the necessity for keeping the whole substrate processing apparatus at the highest inner pressure (p1) and supplying a large amount of N2 gas, and therefore it is possible to achieve processings of substrate at lower cost, with shorter purge time and less contamination of substrate.
摘要翻译：各分别包括用于供给N 2气体的入口和用于排出内部气氛的出口，因此，这些室在一个单位时间内具有不同的时间量的N 2气体供应量和不同的内部空气排放量。通过这种结构，第一至第四处理室被控制为具有最低的内部压力（p3），转移模块被控制为具有高于内部压力（p3）的内部压力（p2），并且装载机和卸载器控制为具有最高的内压（p1）。这消除了将整个基板处理装置保持在最高内部压力（p1）并且供应大量N 2气体的必要性，因此可以以更低的成本实现基板的处理，具有更短的吹扫时间和更少的污染基质。

30. 发明授权

US5571375A Method of removing native oxide film from a contact hole on silicon wafer 失效
标题翻译：从硅晶片上的接触孔去除原生氧化膜的方法
公开(公告)号：US5571375A
公开(公告)日：1996-11-05
申请号：US929678
申请日：1992-08-13
申请人： Akira Izumi , Takeshi Matsuka
发明人： Akira Izumi , Takeshi Matsuka
IPC分类号： H01L21/306 , H01L21/308 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/02063
摘要： A method of removing a native oxide film on a main surface of a silicon wafer. The native oxide film is formed in a contact hole of a patterned BPSG film or PSG film formed on the main surface. The method includes the steps of: placing a silicon wafer in a reaction chamber hermetically separated from outside atmosphere, and supplying mixed vapor of hydrogen fluoride and substantially high concentration alcohol to the reaction chamber. The step of supplying the mixed vapor of hydrogen fluoride and substantially high concentration alcohol preferably includes the steps of generating vapor from an azeotropic concentration mixture of hydrogen fluoride and alcohol, generating vapor of high purity alcohol solution and mixing these vapors. The vapor of hydrogen fluoride easily enters a small opening, which enables etching of the native oxide film. Since substantially high concentration alcohol exists in the reaction atmosphere, moisture the like by-product of etching is removed by the alcohol. Therefore, there is no possibility of excessively promoting etching of the BPSG film, etc. An alcohol layer is formed on the main surface after the etching, which prevents formation of a native oxide film on the main surface.
摘要翻译：一种去除硅晶片主表面上的自然氧化膜的方法。该自然氧化膜形成在形成在主表面上的图案化的BPSG膜或PSG膜的接触孔中。该方法包括以下步骤：将硅晶片放置在与外部气氛密封分离的反应室中，并向反应室供应氟化氢和基本上高浓度的醇的混合蒸汽。提供氟化氢和基本上高浓度醇的混合蒸气的步骤优选包括从氟化氢和醇的共沸浓缩混合物产生蒸汽，产生高纯度醇溶液的蒸气并混合这些蒸气的步骤。氟化氢的蒸汽容易进入小开口，这使得蚀刻天然氧化膜。由于在反应气氛中存在大量高浓度的醇，因此通过醇除去水分等蚀刻副产物。因此，不可能过度促进BPSG膜的蚀刻等。在蚀刻之后，在主表面上形成醇层，从而防止在主表面上形成自然氧化膜。

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