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21. 发明授权

US07217481B2 Photomask blank, photomask, methods of manufacturing the same and methods of forming micropattern 有权
标题翻译：光掩模坯料，光掩模，其制造方法和形成微图案的方法
公开(公告)号：US07217481B2
公开(公告)日：2007-05-15
申请号：US11063830
申请日：2005-02-23
申请人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
发明人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
IPC分类号： G03F7/00
CPC分类号： G03F1/58 , C23C14/0042 , C23C14/0635 , C23C14/0641 , C23C14/0676 , G03F1/46 , Y10T428/31616
摘要： In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.
摘要翻译：在通过在真空室中设置溅射靶来形成光掩模坯料1并且通过反应溅射在透明衬底2上形成具有CrN / CrC / CrON三层结构的薄膜3,4和5，薄膜是在含有氦的混合气体气氛中形成，并且控制混合气体中的氦气流量，使得最厚膜的CrC薄膜的晶粒直径为3〜7nm。这产生具有薄膜应力薄膜的光掩模坯料，具有良好的膜质量，并且可以以大量生产的高产率生产。

22. 发明授权

US06899979B1 Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern 有权
标题翻译：光掩模坯料，光掩模，其制造方法以及形成微图案的方法
公开(公告)号：US06899979B1
公开(公告)日：2005-05-31
申请号：US09509472
申请日：1999-07-30
申请人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
发明人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
IPC分类号： C23C14/00 , C23C14/06 , G03F1/46 , G03F1/50 , G03F1/54 , G03F1/58 , G03F7/00
CPC分类号： G03F1/58 , C23C14/0042 , C23C14/0635 , C23C14/0641 , C23C14/0676 , G03F1/46 , Y10T428/31616
摘要： In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.
摘要翻译：在通过在真空室中设置溅射靶来形成光掩模坯料1并且通过反应溅射在透明衬底2上形成具有CrN / CrC / CrON三层结构的薄膜3,4和5，薄膜是在含有氦的混合气体气氛中形成，并且控制混合气体中的氦气流量，使得最厚膜的CrC薄膜的晶粒直径为3〜7nm。这产生具有薄膜应力薄膜的光掩模坯料，具有良好的膜质量，并且可以以大量生产的高产率生产。

23. 发明授权

US6153341A Phase shift mask and phase shift mask blank 有权
公开(公告)号：US6153341A
公开(公告)日：2000-11-28
申请号：US327032
申请日：1999-06-07
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

24. 发明授权

US6037083A Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method 有权
标题翻译：半色调相移掩模毛坯，半色调相移掩模和精细图案形成方法
公开(公告)号：US6037083A
公开(公告)日：2000-03-14
申请号：US217838
申请日：1998-12-22
申请人： Masaru Mitsui
发明人： Masaru Mitsui
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： An object is to provide acid-resistant, highly reliable phase shift masks, and phase shift mask blanks, wherewith high-precision patterning is possible.A halftone phase shift mask blank comprising a transparent substrate 10, a halftone material film 11 laminated on that transparent substrate, and a metal film 12 laminated on that halftone material film, wherein the metal film is formed by a plurality of metal films having different etching rates, and the etching rate for the metal film positioned on the transparent substrate side is set so that it is faster, either in stages or continuously, than the etching rate of the metal film positioned on the surface side.
摘要翻译：目的是提供耐酸，高可靠性的相移掩模和相移掩模毛坯，其中可以进行高精度图案化。一种半色调相移掩模坯料，其包括透明基板10，层压在该透明基板上的半色调材料膜11和层压在该半色调材料膜上的金属膜12，其中金属膜由具有不同蚀刻的多个金属膜形成速度，并且将位于透明基板侧的金属膜的蚀刻速率设定为比位于表面侧的金属膜的蚀刻速度更快，分级或连续地更快。

25. 发明授权

US08652306B2 Method for manufacturing mask blank, method for manufacturing transfer mask, sputtering target for manufacturing mask blank 有权
标题翻译：掩模毛坯的制造方法，转印掩模的制造方法，制造掩模毛坯的溅射靶
公开(公告)号：US08652306B2
公开(公告)日：2014-02-18
申请号：US10523470
申请日：2003-08-19
申请人： Masaru Mitsui
发明人： Masaru Mitsui
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/0676 , C23C14/3414 , G03F1/26 , G03F1/32 , G03F1/68
摘要： To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.
摘要翻译：提供一种能够制造能够制造高质量掩模板的掩模板的方法，该掩模坯料抑制用于以高产率形成掩模图案的薄膜中的缺陷的产生，制造制造掩模薄膜的转印掩模的方法以及用于制造掩模毛坯的溅射靶。通过使用维氏硬度为900HV以上的硅的溅射靶，通过溅射形成用于在基板上形成掩模图案的薄膜，制造抑制缺陷产生的高质量掩模坯料，并且通过对薄膜进行图案化来制造转印掩模。

26. 发明授权

US08039178B2 Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks 有权
标题翻译：掩模板用透明基板的制造方法，掩模坯料的制造方法，曝光掩模的制造方法，半导体装置的制造方法，液晶显示装置的制造方法以及曝光掩模的缺陷校正方法
公开(公告)号：US08039178B2
公开(公告)日：2011-10-18
申请号：US12952360
申请日：2010-11-23
申请人： Masaru Tanabe , Masaru Mitsui
发明人： Masaru Tanabe , Masaru Mitsui
IPC分类号： G03F1/00
CPC分类号： G03F1/72 , G03F1/60
摘要： There are provided a manufacturing method of a transparent substrate for a mask blank, a mask blank, or an exposure mask adapted to prevent occurrence of a transfer pattern defect or a mask pattern defect, by correcting a recessed defect existing on the surface of the transparent substrate, and a defect correction method of an exposure mask.With respect to an exposure mask having a transparent substrate 1 formed thereon with a mask pattern 2 which becomes a transfer pattern, correction is performed by removing, by the use of a needle-shaped member 4, a peripheral portion of a recessed defect 3 formed on a surface 1a of the substrate, where the mask pattern 2 is not formed, so as to induce a reduction in transmission light quantity which causes a transfer pattern defect, thereby reducing a level difference between the surface of the substrate and the depth of the recessed defect. This correction of the recessed defect is carried out at the stage before forming a mask pattern forming thin film on the transparent substrate. A mask blank and an exposure mask are manufactured by the use of the transparent substrate applied with the correction of the recessed defect.
摘要翻译：提供了一种用于掩模坯料，掩模坯料或曝光掩模的透明基板的制造方法，其适于防止转印图案缺陷或掩模图案缺陷的发生，通过校正存在于透明的表面上的凹陷缺陷基板和曝光掩模的缺陷校正方法。对于具有形成有作为转印图案的掩模图案2的透明基板1的曝光掩模，通过使用针状部件4去除形成的凹陷缺陷3的周边部来进行修正在没有形成掩模图案2的基板的表面1a上，引起导致转印图案缺陷的透光量的降低，从而降低基板的表面与基板的深度之间的水平差凹陷缺陷。凹陷缺陷的这种校正在透明基板上形成掩模图案形成薄膜之前的阶段进行。通过使用应用了凹陷缺陷校正的透明基板来制造掩模坯料和曝光掩模。

27. 外观设计

USD543160S1 Photomask blank 失效
公开(公告)号：USD543160S1
公开(公告)日：2007-05-22
申请号：US29213841
申请日：2004-09-23
申请人： Masaru Mitsui , Shigekazu Matsui , Masao Ushida , Osamu Nagarekawa
设计人： Masaru Mitsui , Shigekazu Matsui , Masao Ushida , Osamu Nagarekawa

28. 发明申请

US20050142463A1 Photomask blank, photomask, methods of manufacturing the same and methods of forming micropattern 有权
标题翻译：光掩模坯料，光掩模，其制造方法和形成微图案的方法
公开(公告)号：US20050142463A1
公开(公告)日：2005-06-30
申请号：US11063830
申请日：2005-02-23
申请人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
发明人： Masaru Mitsui , Haruhiko Yamagata , Masao Ushida
IPC分类号： C23C14/00 , C23C14/06 , G03F1/46 , G03F1/50 , G03F1/54 , G03F1/58 , B32B17/06 , B32B9/00 , B32B17/10 , G03F9/00
CPC分类号： G03F1/58 , C23C14/0042 , C23C14/0635 , C23C14/0641 , C23C14/0676 , G03F1/46 , Y10T428/31616
摘要： In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.
摘要翻译：在通过在真空室中设置溅射靶来形成光掩模坯料1并且通过反应溅射在透明衬底2上形成具有CrN / CrC / CrON三层结构的薄膜3,4和5，薄膜是在含有氦的混合气体气氛中形成，并且控制混合气体中的氦气流量，使得最厚膜的CrC薄膜的晶粒直径为3〜7nm。这产生具有薄膜应力薄膜的光掩模坯料，具有良好的膜质量，并且可以以大量生产的高产率生产。

29. 发明授权

US06475681B2 Phase shift mask and phase shift mask blank 有权
标题翻译：相移掩模和相移掩模空白
公开(公告)号：US06475681B2
公开(公告)日：2002-11-05
申请号：US09814657
申请日：2001-03-22
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.
摘要翻译：半色调型相移掩模以及用于掩模的相移掩模坯料由基本上由氮，金属和硅制成的薄膜光半透明部分形成。每个元素的含量和比例在薄膜中被规定在一定范围内以改善诸如耐酸性，光电阻，电导率，折射率（膜厚），透光率，蚀刻选择性等的膜特性。的光半透明部分。相移掩模以高精度满足光学特性（即透光率和相移量），并且减少薄膜中的缺陷。

30. 发明授权

US5942356A Phase shift mask and phase shift mask blank 失效
公开(公告)号：US5942356A
公开(公告)日：1999-08-24
申请号：US825068
申请日：1997-03-27
申请人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
发明人： Masaru Mitsui , Kimihiro Okada , Hideki Suda
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

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