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    • 21. 发明申请
    • Film forming apparatus and method
    • 成膜装置及方法
    • US20050249876A1
    • 2005-11-10
    • US11034940
    • 2005-01-14
    • Takaaki KawaharaKazuyoshi Torii
    • Takaaki KawaharaKazuyoshi Torii
    • C23C16/44C23C16/455C30B25/14H01L21/31H01L21/316H01L21/8238H01L27/092H01L29/78C23C16/00
    • C23C16/45544C23C16/45514C23C16/45531C23C16/45561C30B25/14
    • An atomic layer deposition (ALD) apparatus capable of forming a conformal ultrathin-film layer with enhanced step coverage is disclosed. The apparatus includes an ALD reactor supporting therein a wafer, and a main pipe coupled thereto for constant supply of a carrier gas. This pipe has two parallel branch pipes. Raw material sources are connected by three-way valves to one branch pipe through separate pipes, respectively. Similarly, oxidant/reducer sources are coupled by three-way valves to the other branch pipe via independent pipes. ALD works by introducing one reactant gas at a time into the reactor while being combined with the carrier gas. The gas is “chemisorped” onto the wafer surface, creating a monolayer deposited. During the supply of a presently selected material gas from its source to a corresponding branch pipe, this gas passes through its own pipe independently of the others. An ALD method is also disclosed.
    • 公开了能够形成具有增强的阶梯覆盖层的保形超薄膜层的原子层沉积(ALD)装置。 该装置包括支撑晶片的ALD反应器和与其连接的主管以恒定地供应载气。 该管道有两根平行的支管。 原料源分别通过三通阀连接到一根分支管上。 类似地,氧化剂/还原剂源通过三通阀通过独立管道连接到另一支管。 ALD通过在与载气组合的同时将一个反应物气体一次引入反应器中起作用。 气体被“化学吸附”到晶片表面上,产生沉积的单层。 在将来自其源的目前选择的材料气体供应到相应的分支管道期间,该气体独立于其它管道通过其自身的管道。 还公开了一种ALD方法。