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21. 发明申请

US20070297100A1 Magneto-resistive effect element and magnetic disk device 失效
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20070297100A1
公开(公告)日：2007-12-27
申请号：US11589110
申请日：2006-10-30
申请人： Toyoo Miyajima , Mineharu Tsukada
发明人： Toyoo Miyajima , Mineharu Tsukada
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3912 , G11B2005/3996 , Y10T29/49043
摘要： An alignment control film is formed on an alumina film by sputtering. A Ti film, a Ta film, a Ru film, a MgO film or the like is formed as the alignment control film. A lower shield layer is formed on the alignment control film. Crystal grains composing the lower shield layer will be of a columnar crystal grains. The lower shield layer will have the (111) surface exposed to the surface thereof when a Ti film, a Ta film or a Ru film is formed as the alignment control film, whereas the lower shield layer will have the (100) surface exposed to the surface thereof when a MgO film is formed as the alignment control film. A GMR film is then formed on the lower shield layer. The GMR film is formed by first allowing an anti-ferromagnetic film to epitaxially grow on the lower shield layer. The anti-ferromagnetic film will have also the (111) surface or the (100) surface reflecting the crystal structure of the lower shield layer.
摘要翻译：通过溅射在氧化铝膜上形成取向控制膜。形成Ti膜，Ta膜，Ru膜，MgO膜等作为取向控制膜。在取向控制膜上形成下屏蔽层。构成下屏蔽层的晶粒将是柱状晶粒。当形成Ti膜，Ta膜或Ru膜作为取向控制膜时，下屏蔽层具有暴露于其表面的（111）表面，而下屏蔽层将（100）表面暴露于当形成MgO膜时作为取向控制膜的表面。然后在下屏蔽层上形成GMR膜。 GMR膜通过首先使反铁磁膜在下屏蔽层上外延生长而形成。反铁磁膜还具有（111）表面或（100）表面反映下屏蔽层的晶体结构。

22. 发明授权

US07239026B2 Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip 失效
标题翻译：具有用于向IC芯片施加拉伸或压缩应力的管芯附接的半导体器件和管芯焊盘
公开(公告)号：US07239026B2
公开(公告)日：2007-07-03
申请号：US11440068
申请日：2006-05-25
申请人： Jeffrey Scott Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
发明人： Jeffrey Scott Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译：半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的强电介质膜施加拉伸或压缩应力的应力施加层。

23. 发明授权

US07017430B2 Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device 有权
标题翻译：电介质膜的检查装置和检查方法以及制造半导体器件的方法
公开(公告)号：US07017430B2
公开(公告)日：2006-03-28
申请号：US10437892
申请日：2003-05-15
申请人： Jeffrey S. Cross , Mineharu Tsukada
发明人： Jeffrey S. Cross , Mineharu Tsukada
IPC分类号： G01M19/00
CPC分类号： H01L27/11502 , G11C11/22 , G11C29/50 , G11C2029/5002 , H01L27/11507
摘要： After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H2+97 vol % N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.
摘要翻译：将样品放入加热真空室后，将探针向下爬到样品中形成的电容器上方的位置，其电气特性应被测量。探头与电容器的两个电极接触，这是通过电气测量确认的。为了测量电容损耗，在加热真空室中填充N 2气体之后，从3体积％H 2 + 97体积的管线引入混合气体％N 2 到加热真空室的内部。压力稳定后，同时测量电容损耗和经过时间。通过四极质谱仪QMS测量加热真空室中残余H 2 O 2和残余O 2 O 2的浓度; 并且同时，通过传感器测量废气中的残留H 2 O 2和残余O 2 O 2中的每一个的浓度。

24. 发明授权

US06194228B1 Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor 有权
标题翻译：具有钙钛矿型氧化膜的电子器件，其制造方法和铁电电容器
公开(公告)号：US06194228B1
公开(公告)日：2001-02-27
申请号：US09175977
申请日：1998-10-21
申请人： Mitsushi Fujiki , Jeffrey S. Cross , Mineharu Tsukada
发明人： Mitsushi Fujiki , Jeffrey S. Cross , Mineharu Tsukada
IPC分类号： H01L2100
CPC分类号： H01L28/56 , H01L21/31691
摘要： A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.
摘要翻译：一种制造包括钙钛矿型氧化物膜的电子器件的方法，所述方法包括以下步骤：在第一温度的减压气氛中，在基底衬底上形成钙钛矿型的第一导电氧化物膜，并进行热处理在高于第一温度的第二温度下在含有氧的氧化气氛中的第一导电氧化物膜上。

25. 发明授权

US6156259A Method of manufacturing piezoelectric materials 失效
标题翻译：制造压电材料的方法
公开(公告)号：US6156259A
公开(公告)日：2000-12-05
申请号：US540028
申请日：1995-10-06
申请人： Motoyuki Nishizawa , Mineharu Tsukada , Kaoru Hashimoto , Nobuo Kamehara
发明人： Motoyuki Nishizawa , Mineharu Tsukada , Kaoru Hashimoto , Nobuo Kamehara
IPC分类号： C04B35/46 , C04B35/472 , C04B35/497 , C04B35/499 , C04B35/645 , H01L41/187 , H01L41/39 , C04B33/32
CPC分类号： C04B35/497 , C04B35/499 , C04B35/6455 , H01L41/1875 , H01L41/43
摘要： In a method of manufacturing piezoelectric ceramics by molding pre-fired or calcined powders of ingredients of a piezoelectric ceramic material and sintering the powder mold at a high pressure, the powder mold is pre-sintered at an atmospheric pressure before sintering at high pressure (HIP). Preferably, after the sintering HIP step, a thermal treatment is performed at a temperature of from 500 to 1000.degree. C. under an oxidizing atmosphere. For a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 --PbTiO.sub.3 based piezoelectric ceramic, the composition is preferably set to (Pb.sub.1-x Ba.sub.x)[(Zn.sub.1/3 Nb.sub.2/3).sub.1-y Ti.sub.y ]O.sub.3, where 0.001
摘要翻译：在通过模制压电陶瓷材料的预成型或煅烧粉末并在高压下烧结粉末模具来制造压电陶瓷的方法中，在高压烧结（HIP）之前将粉末模具在大气压下预烧结）。优选在烧结HIP工序后，在氧化气氛下，在500〜1000℃的温度下进行热处理。对于Pb（Zn1 / 3Nb2 / 3）O3-PbTiO3基压电陶瓷，组合物优选设定为（Pb1-xBax）[（Zn1 / 3Nb2 / 3）1-yTiy] O3，其中0.001

26. 发明授权

US5683529A Process of producing aluminum nitride multiple-layer circuit board 失效
标题翻译：生产氮化铝多层电路板的工艺
公开(公告)号：US5683529A
公开(公告)日：1997-11-04
申请号：US661885
申请日：1996-06-11
申请人： Hiroshi Makihara , Koji Omote , Nobuo Kamehara , Mineharu Tsukada
发明人： Hiroshi Makihara , Koji Omote , Nobuo Kamehara , Mineharu Tsukada
IPC分类号： C04B35/64 , C04B41/51 , C04B41/88 , H01L21/48 , H01L23/498 , H05K1/03 , C04B37/00
CPC分类号： C04B41/009 , C04B41/5133 , C04B41/88 , H01L21/4807 , H01L21/4867 , H01L23/49883 , C04B2111/00844 , H01L2924/0002
摘要： A process of producing a multiple-layer circuit board of aluminum nitride, including the steps of: preparing green sheets of aluminum nitride, forming on the green sheets conductor patterns of a conductor paste containing tungsten as a main conductor component, laminating the green sheets with the conductor patterns formed thereon to form a lamination, and firing the lamination in a container made of boron nitride and in a pressurized nitrogen gas atmosphere.
摘要翻译：一种制造氮化铝多层电路板的方法，包括以下步骤：制备生长氮化铝片，在包含钨作为主导体组分的导体糊的生片导体图案上形成，将生片与在其上形成的导体图案以形成层压，并且在由氮化硼制成的容器中和在加压氮气气氛中焙烧层压。

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