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21. 发明授权

US08207544B2 Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件，外延衬底以及III族氮化物半导体器件的制造方法
公开(公告)号：US08207544B2
公开(公告)日：2012-06-26
申请号：US12836144
申请日：2010-07-14
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸，氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括多个GaN基半导体层。基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

22. 发明授权

US08048702B2 Method of fabricating nitride-based semiconductor optical device 失效
标题翻译：制造氮化物基半导体光学器件的方法
公开(公告)号：US08048702B2
公开(公告)日：2011-11-01
申请号：US12692154
申请日：2010-01-22
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Takashi Kyono , Katsushi Akita
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Takashi Kyono , Katsushi Akita
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075
摘要： In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.
摘要翻译：在通过金属有机化学气相沉积制造氮化物基半导体光学器件的方法中，在将镓源供应到反应器的同时，在第一温度下生长阻挡层。阻挡层包括第一氮化镓基半导体。在阻挡层生长之后，向反应器供给氮材料和铟材料，而不提供镓源以执行铟的预流。在预流之后立即在第二温度下在阻挡层上生长阱层，同时向反应器供应铟源和镓源。阱层包括InGaN，第二温度低于第一温度。在生长阱层的步骤的多个第一阶段期间，分别将镓源和铟源供应到反应器，以生长多个InGaN层。在生长阱层的第二阶段期间，铟材料被供应到反应器而不供应镓源。第二个时期是在第一个时期之间。阱层包括多个InGaN层。

23. 发明申请

US20110227035A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110227035A1
公开(公告)日：2011-09-22
申请号：US12999987
申请日：2010-06-14
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/12
摘要： Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate (5) formed from a hexagonal-crystal gallium nitride semiconductor; an n-type gallium nitride semiconductor region (7) disposed on a main surface (S1) of the substrate (5); a light-emitting layer (11) having a single quantum well structure disposed on the n-type gallium nitride semiconductor region (7); and a p-type gallium nitride semiconductor region (19) disposed on the light-emitting layer (11). The light-emitting layer (11) is disposed between the n-type gallium nitride semiconductor region (7) and the p-type gallium nitride semiconductor region (19). The light-emitting layer (11) comprises a well layer (15), a barrier layer (13), and a barrier layer (17). The well layer (15) is InGaN. The main surface (S1) extends, from a surface perpendicular to the c axial direction of the hexagonal-crystal gallium nitride semiconductor, along a reference plane (S5) inclined at an angle of inclination within a range between 63° and 80° or between 100° and 117°.
摘要翻译：提供了一种具有提高到阱层的载流子注入效率的氮化物基半导体发光元件。元件包括由六方晶系氮化镓半导体形成的基板（5）设置在所述基板（5）的主表面（S1）上的n型氮化镓半导体区域（7）。具有设置在n型氮化镓半导体区域（7）上的单量子阱结构的发光层（11）; 和设置在发光层（11）上的p型氮化镓半导体区域（19）。发光层（11）设置在n型氮化镓半导体区域（7）和p型氮化镓半导体区域（19）之间。发光层（11）包括阱层（15），阻挡层（13）和阻挡层（17）。阱层（15）是InGaN。主表面（S1）从垂直于六方晶系氮化镓半导体的c轴方向的表面沿着在63°至80°之间的范围内倾斜的参考平面（S5）延伸，或者在 100°和117°。

24. 发明申请

US20110124142A1 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开
标题翻译： GAN半导体光学元件，制造GAN半导体光学元件的方法，外延晶体和用于生长GAN半导体膜的方法
公开(公告)号：US20110124142A1
公开(公告)日：2011-05-26
申请号：US13019067
申请日：2011-02-01
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.
摘要翻译：在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。在GaN基半导体外延区域15上，设置有源层17。有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

25. 发明授权

US07851243B1 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device 有权
标题翻译：基于氮化物的半导体光学器件，用于氮化物半导体光学器件的外延晶片，以及制造半导体发光器件的方法
公开(公告)号：US07851243B1
公开(公告)日：2010-12-14
申请号：US12852060
申请日：2010-08-06
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/205
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

26. 发明授权

US08829545B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08829545B2
公开(公告)日：2014-09-09
申请号：US12119015
申请日：2008-05-12
申请人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X
摘要翻译： III族氮化物半导体发光器件包括n型氮化镓基半导体层，第一p型AlXGa1-XN（0＆lt; NlE; X <1）层，包含InGaN层的有源层，和第三p型AlZGa1-XN层（0＆amp; nlE; Z＆lt; EL; Y＆lt; NlE; X <1）和与第三p型AlZGa1相接触的p电极的第二p型AlYGa1-YN（0＆nlE; Y＆ -ZN层。有源层设置在n型氮化镓基半导体层和第一p型AlXGa1-XN层之间。在第一p型AlXGa1-XN层上设置第二p型AlYGa1-YN（0＆nlE; Y＆nlE; X <1）层。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第一p型AlXGa1-XN层的p型掺杂剂浓度。在第二p型AlYGa1-YN层上设置第三p型AlZGa1-ZN层（0＆nlE; Z＆lt; Y; Y＆nlE; X <1）。第二p型AlYGa1-YN层的p型掺杂剂浓度大于第三p型AlZGa1-ZN层的p型掺杂剂浓度。

27. 发明授权

US08803274B2 Nitride-based semiconductor light-emitting element 有权
标题翻译：氮化物系半导体发光元件
公开(公告)号：US08803274B2
公开(公告)日：2014-08-12
申请号：US13054037
申请日：2010-06-18
申请人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Takashi Kyono , Yohei Enya , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L31/102 , H01L33/32 , B82Y20/00 , H01S5/343 , H01L33/16 , H01S5/34 , H01S5/32 , H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404
摘要： A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.
摘要翻译：氮化物系半导体发光元件LE1或LD1具有：氮化镓衬底11，其具有在40°至50°的范围内或大于90°至130°的范围内具有角度α的主表面11a，其中参考平面Sc垂直于在c轴方向上延伸的参考轴线Cx; n型氮化镓系半导体层13; 第二氮化镓基半导体层17; 以及包括多个InGaN阱层和GaN基半导体的多个势垒层23的发光层15，其中多个阱层21的压电极化的方向是来自n型的方向氮化镓系半导体层13朝向第二氮化镓系半导体层17。

28. 发明授权

US08741674B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08741674B2
公开(公告)日：2014-06-03
申请号：US13335560
申请日：2011-12-22
申请人： Yusuke Yoshizumi , Shimpei Takagi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Shimpei Takagi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L21/00 , H01L21/8252
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴方向倾斜的支撑基底的半极性表面。第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。在激光结构中，第一表面与第二表面相对。第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

29. 发明授权

US08546163B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08546163B2
公开(公告)日：2013-10-01
申请号：US13240368
申请日：2011-09-22
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

30. 发明授权

US08541253B2 III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08541253B2
公开(公告)日：2013-09-24
申请号：US13416844
申请日：2012-03-09
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Takamichi Sumitomo , Masaki Ueno , Takatoshi Ikegami , Koji Katayama , Takao Nakamura
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Takamichi Sumitomo , Masaki Ueno , Takatoshi Ikegami , Koji Katayama , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

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