专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

2. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

3. 发明授权

US08174035B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08174035B2
公开(公告)日：2012-05-08
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
发明人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

4. 发明授权

US09231370B2 Group III nitride semiconductor light emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US09231370B2
公开(公告)日：2016-01-05
申请号：US13453743
申请日：2012-04-23
申请人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
发明人： Takamichi Sumitomo , Takashi Kyono , Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Masahiro Adachi , Shimpei Takagi , Katsunori Yanashima
IPC分类号： H01S5/042 , H01S5/32 , H01S5/343 , B82Y20/00 , H01S5/02 , H01S5/028 , H01S5/22
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。欧姆电极通过绝缘层的开口与第三区域接触。第一部分具有延伸到第一端面边缘的第一臂。第三部分远离第一端面边缘。

5. 发明授权

US08748868B2 Nitride semiconductor light emitting device and epitaxial substrate 失效
标题翻译：氮化物半导体发光器件和外延衬底
公开(公告)号：US08748868B2
公开(公告)日：2014-06-10
申请号：US13294010
申请日：2011-11-10
申请人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
发明人： Takashi Kyono , Yohei Enya , Katsushi Akita , Masaki Ueno , Yusuke Yoshizumi , Takamichi Sumitomo
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02661 , H01L33/18 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/3201 , H01S5/3211
摘要： For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.
摘要翻译：对于氮化物半导体发光器件，支撑衬底的六边形GaN的c轴矢量相对于垂直于主表面的法线轴Nx相对于X轴方向倾斜。在半导体区域中，在支撑基板的主表面上沿着法线布置有源层，第一氮化镓基半导体层，电子阻挡层和第二氮化镓基半导体层。 p型覆层由AlGaN构成，电子阻挡层由AlGaN构成。电子阻挡层在X轴方向上受到拉伸应变。第一氮化镓基半导体层在X轴方向上受到压应变。界面处的错配位错密度小于界面处的位错密度。在界面处的电子势垒由压电极化引起。

6. 发明授权

US08718110B2 Nitride semiconductor laser and epitaxial substrate 有权
标题翻译：氮化物半导体激光器和外延衬底
公开(公告)号：US08718110B2
公开(公告)日：2014-05-06
申请号：US13366636
申请日：2012-02-06
申请人： Takashi Kyono , Yohei Enya , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Takashi Kyono , Yohei Enya , Takamichi Sumitomo , Yusuke Yoshizumi , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/00
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

7. 发明授权

US08548021B2 III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser 有权
标题翻译： III族氮化物半导体激光器和III族氮化物半导体激光器的制造方法
公开(公告)号：US08548021B2
公开(公告)日：2013-10-01
申请号：US13211858
申请日：2011-08-17
申请人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
发明人： Kei Fujii , Masaki Ueno , Katsushi Akita , Takashi Kyono , Yusuke Yoshizumi , Takamichi Sumitomo , Yohei Enya
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04
摘要： Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode.
摘要翻译：提供了允许使用半极性平面提供低阈值的III族氮化物半导体激光器。半导体基板13的主表面13a相对于垂直于参考的参考平面朝向a轴方向的不小于50度且不超过70度的范围内以倾斜角AOFF倾斜沿着C轴方向的C x轴。在半导体衬底13的主表面13a上设置第一覆层15，有源层17和第二覆层19.有源层17的阱层23a包括InGaN。来自激光器的半导体激光器的有源层的发光LED的偏振度P不小于-1且不大于0.1。 III族氮化物半导体激光器的偏振度P通过使用X1方向的电场分量I1和X2方向的电场分量I2由P =（I1-I2）/（I1 + I2）定义在LED模式下。

8. 发明授权

US08507305B2 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate 失效
标题翻译： III族氮化物半导体激光器件，III族氮化物半导体激光器件的制造方法和外延衬底
公开(公告)号：US08507305B2
公开(公告)日：2013-08-13
申请号：US13443480
申请日：2012-04-10
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.
摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。电极设置在半导体区域上。半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

9. 发明授权

US08483251B2 Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode 失效
标题翻译： III族氮化物半导体激光二极管，以及III族氮化物半导体激光二极管的制造方法
公开(公告)号：US08483251B2
公开(公告)日：2013-07-09
申请号：US13294378
申请日：2011-11-11
申请人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Takashi Kyono , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01S5/2009 , H01S5/34333
摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
摘要翻译：提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。在n型包覆层上生长GaN光引导层以使其晶格弛豫。生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。交界处的位错密度大于其他路口的位错密度。

10. 发明授权

US08357946B2 Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件，外延衬底和用于制造氮化物半导体发光器件的方法
公开(公告)号：US08357946B2
公开(公告)日：2013-01-22
申请号：US13189194
申请日：2011-07-22
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo
IPC分类号： H01L27/15
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/18 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0
摘要翻译：提供了一种氮化物半导体发光器件，其包括具有半极性表面的GaN支撑基底上方的发光层，并且允许抑制由于失配位错引起的发光效率的降低。氮化物半导体发光器件11具有由六方晶系氮化镓构成的支撑基体13，包含InX1AlY1Ga1-X1-Y1N（0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式