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    • 24. 发明申请
    • Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    • 阻止含有热酸发生剂的下层组合物,抗下层薄膜形成基材和图案化工艺
    • US20100119970A1
    • 2010-05-13
    • US12588590
    • 2009-10-20
    • Youichi OhsawaJun HatakeyamaTakeru WatanabeTakeshi Kinsho
    • Youichi OhsawaJun HatakeyamaTakeru WatanabeTakeshi Kinsho
    • G03F7/20C07C309/19C07C309/04G03F7/004
    • C07C381/12C07C309/12C07C2603/74C07D307/93G03F7/0045G03F7/091
    • There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+  (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
    • 公开了一种抗蚀剂下层组合物,其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层,其中抗蚀剂下层组合物变得不溶或 形成下层后在碱性显影剂中难以溶解,并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式(1)表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +(1)可以提供多层抗蚀剂法(特别是双层抗蚀剂法和三层抗蚀剂法)中的抗蚀剂下层组合物,该组合物用于形成 层低于作为抗蚀剂上层膜的光致抗蚀剂层,该组合物在形成下层之后在碱性显影剂中变得不溶或难溶,并且该组合物能够形成抗蚀剂下层膜,中间层膜 等具有较高的抗中毒作用并且对环境具有较低的负荷。