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    • 23. 发明授权
    • Sensor signal processing apparatus
    • 传感器信号处理装置
    • US06586943B1
    • 2003-07-01
    • US09626128
    • 2000-07-26
    • Takashi MasudaYasuhide Yoshikawa
    • Takashi MasudaYasuhide Yoshikawa
    • G01R3100
    • G01D5/24G01D3/032G01L9/0072G01L9/125
    • A sensor signal processing apparatus includes a sensor section, power supply section, switching section, and CPU. The characteristics of the sensor section change in accordance with a change in physical quantity to be measured. The power supply section supplies powers of two systems having different polarities to the sensor section. The switching section is connected between the power supply section and the sensor section to switch combinations of powers of the two systems from the power supply section while preventing mixing of powers of the two systems. The CPU obtains the ratio between the differences between a plurality of signals output from the sensor section for every switching operation of the switching section.
    • 传感器信号处理装置包括传感器部分,电源部分,切换部分和CPU。 传感器部的特性根据被测定物理量的变化而变化。 电源部分向传感器部分提供具有不同极性的两个系统的电力。 开关部分连接在电源部分和传感器部分之间,以便在两个系统的功率混合的同时切换来自电源部分的两个系统的电力的组合。 CPU根据切换部的切换动作,得到从传感器部输出的多个信号之间的差分比。
    • 24. 发明授权
    • SOI device having a leakage stopping layer
    • 具有泄漏停止层的SOI器件
    • US06452233B1
    • 2002-09-17
    • US09531893
    • 2000-03-21
    • Takashi Masuda
    • Takashi Masuda
    • H01L2701
    • H01L29/66772H01L29/78609H01L29/78615
    • A lightly doped region (3) of N-type or P-type isolated from one component region and another is formed out of a surface silicon layer of an SOI substrate (1), a gate electrode (21) is provided above the lightly doped region (3) with a gate oxidation film (15) therebetween, a drain region (5) and a source region (7) made by making the lightly doped region (3) on the front face side different in conduction type from the lightly doped region (3) are provided respectively on both sides of the gate electrode (21), and a leakage stopping layer (13) which is the same in conduction type as the lightly doped region (3) and higher in impurity concentration than the lightly doped region (3) is provided between the source region (7) and a buried oxidation film (19).
    • 从SOI衬底(1)的表面硅层形成从一个部件区域隔离的N型或P型轻掺杂区域(3),在轻掺杂的上方设置栅电极(21) 在其间具有栅极氧化膜(15)的区域(3),漏极区域(5)和源极区域(7),其通过使得在正面上的轻掺杂区域(3)不同于轻掺杂 区域(3)分别设置在栅电极(21)的两侧,以及泄漏阻挡层(13),其与轻掺杂区域(3)的导电类型相同,并且杂质浓度高于轻掺杂区域 区域(3)设置在源极区域(7)和掩埋氧化膜(19)之间。
    • 27. 发明授权
    • Capacitive pressure sensor
    • 电容式压力传感器
    • US06341527B1
    • 2002-01-29
    • US09680391
    • 2000-10-04
    • Yoshiyuki IshikuraShigeo KimuraTakashi MasudaMasaru SoedaToshiyuki Kataoka
    • Yoshiyuki IshikuraShigeo KimuraTakashi MasudaMasaru SoedaToshiyuki Kataoka
    • G01L912
    • G01L9/0075
    • A capacitive pressure sensor includes lower and upper wafers, a stationary electrode, first and second pads, a movable electrode, and a plurality of extraction electrodes. The lower wafer has a first capacitor forming portion and a first pad forming portion communicating with it. The upper wafer has a second capacitor forming portion, constituting a capacitor chamber together with the first capacitor forming portion, and a second pad forming portion communicating with it. The stationary electrode is formed on a bottom surface of the first capacitor forming portion. The first pad is formed on a bottom surface of the first pad forming portion and connected to the stationary electrode through a first interconnection. The movable electrode is formed on a bottom surface of the second capacitor forming portion to oppose the stationary electrode. The second pad is formed in the second pad forming portion and connected to the movable electrode through a second interconnection. The extraction electrodes are connected to the first and second pads and extracted outside through holes in the lower wafer. The lower and upper wafers are bonded to each other such that their pad forming portions are covered with their bonding surfaces.
    • 电容式压力传感器包括下晶片和上晶片,固定电极,第一和第二焊盘,可动电极和多个提取电极。 下晶片具有第一电容器形成部分和与其连通的第一焊盘形成部分。 上晶片具有与第一电容器形成部分一起构成电容器室的第二电容器形成部分和与其连通的第二焊盘形成部分。 固定电极形成在第一电容器形成部分的底表面上。 第一焊盘形成在第一焊盘形成部分的底表面上,并通过第一互连连接到固定电极。 可动电极形成在第二电容器形成部分的底表面上以与固定电极相对。 第二焊盘形成在第二焊盘形成部分中,并通过第二互连连接到可动电极。 引出电极连接到第一和第二焊盘,并通过下晶片中的孔抽出。 下晶片和上晶片彼此接合,使得它们的焊盘形成部分被其接合表面覆盖。
    • 28. 发明授权
    • Diode formed in a surface silicon layer on an SOI substrate
    • 二极管形成在SOI衬底上的表面硅层中
    • US06051874A
    • 2000-04-18
    • US280689
    • 1999-03-30
    • Takashi Masuda
    • Takashi Masuda
    • H01L29/861H01L23/58H01L29/06H01L31/0352
    • H01L29/861
    • A diode is formed by forming a PN junction region 6 with a p region 5 formed on a buried oxide film 19 side and an n region 7 formed on the surface side in a surface silicon layer 3 which is isolated by the buried oxide film 19 of an SOI substrate 1, providing a lightly doped p region 33 on one end side of the PN junction region 6 and a lightly doped n region 31 on an other end side, forming a heavily doped p region 13 and a heavily doped n region 9 at the respective surface portions of the lightly doped p region 33 and the lightly doped n region 31 in such a manner as not to contact the PN junction region 6, and providing two metal plates which respectively connect to the heavily doped p region 13 and the heavily doped n region 9.
    • 通过在掩埋氧化膜19侧形成有ap区域5的PN结区域6和形成在表面硅层3的表面侧的n区域7形成二极管,该区域被由掩埋氧化膜19 SOI衬底1,在PN结区域6的一端侧提供轻掺杂的p区域33和在另一端侧的轻掺杂n区域31,在该区域形成重掺杂p区域13和重掺杂n区域9 轻掺杂p区域33和轻掺杂n区域31的各个表面部分以不接触PN结区域6的方式提供,并且提供分别连接到重掺杂p区域13和重掺杂的两个金属板 区域9。
    • 30. 发明授权
    • Connector with magnet being held to an apparatus for data
transmission/reception
    • 具有磁体的连接器被保持到用于数据发送/接收的装置
    • US5784511A
    • 1998-07-21
    • US783245
    • 1997-01-14
    • Akihiro KikuchiTakashi MasudaYoshio Kondo
    • Akihiro KikuchiTakashi MasudaYoshio Kondo
    • G02B6/38G02B6/42H01L31/0232H01L33/00H01L33/58H01R13/62H04B10/11H04B10/116
    • H01R13/6205G02B6/3886G02B6/4246
    • A connector apparatus for interconnecting at least two electronic apparatuses, such as a personal computer and a printer, interconnects input/output units of the equipment each having a light emitting element and a light receiving element. The connector apparatus enables data transmission/reception between the equipment. The connector apparatus includes at least two optical fibers and a pair of connecting units. The connecting units include a pair of connecting portions for holding both ends of the optical fibers. Each connecting portion has a magnet portion for attracting by the equipment and a limiting portion for limiting the rotational position at the time of connection to the equipment. With the ends of the optical fibers connected by the connecting portions to the electronic equipment, the ends of the optical fibers are held in the state of enabling data transmission/reception with the input/output units of the equipment.
    • 用于互连诸如个人计算机和打印机的至少两个电子设备的连接器装置互连了具有发光元件和光接收元件的设备的输入/输出单元。 连接器装置能够实现设备之间的数据发送/接收。 连接器装置包括至少两根光纤和一对连接单元。 连接单元包括用于保持光纤两端的一对连接部分。 每个连接部分具有用于由设备吸引的磁体部分和用于限制连接到设备时的旋转位置的限制部分。 由于光纤的端部通过连接部分连接到电子设备,光纤的端部保持在能够与设备的输入/输出单元进行数据发送/接收的状态。