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21. 发明申请

US20080055020A1 Acoustic Resonator 有权
标题翻译：声谐振器
公开(公告)号：US20080055020A1
公开(公告)日：2008-03-06
申请号：US11513895
申请日：2006-08-31
申请人： Martin Handtmann , Jyrki Kaitila , Andreas Meckes , Lueder Elbrecht
发明人： Martin Handtmann , Jyrki Kaitila , Andreas Meckes , Lueder Elbrecht
IPC分类号： H03H9/58
CPC分类号： H03H9/585 , H03H9/0095 , H03H9/589 , H03H9/605
摘要： An acoustic resonator is described, the acoustic resonator comprising a stack of a first and a second piezoelectric body, wherein said first and second piezoelectric bodies have substantially the same spatial piezoelectric orientation, an intermediate intermediate electrode being arranged between said first and said second piezoelectric body forming a first terminal of said acoustic resonator, and first and second electrodes, wherein said first electrode is arranged such that said first piezoelectric body is arranged between said first electrode and said intermediate electrode, wherein said second electrode is arranged such that said second piezoelectric body is arranged between said second electrode and said intermediate electrode, and wherein said first and said second electrode are electrically connected to each other forming a second terminal of said acoustic resonator.
摘要翻译：描述了声谐振器，声谐振器包括第一和第二压电体的堆叠，其中所述第一和第二压电体具有基本上相同的空间压电取向，中间中间电极设置在所述第一和第二压电体之间形成所述声谐振器的第一端子，以及第一和第二电极，其中所述第一电极被布置成使得所述第一压电体布置在所述第一电极和所述中间电极之间，其中所述第二电极被布置成使得所述第二压电体布置在所述第二电极和所述中间电极之间，并且其中所述第一和所述第二电极彼此电连接，形成所述声共振器的第二端子。

22. 发明申请

US20070080756A1 BAW duplexer without phase shifter 有权
标题翻译： BAW双工器无移相器
公开(公告)号：US20070080756A1
公开(公告)日：2007-04-12
申请号：US11246996
申请日：2005-10-07
申请人： Robert Aigner , Martin Handtmann
发明人： Robert Aigner , Martin Handtmann
IPC分类号： H03H9/70
CPC分类号： H03H9/706
摘要： A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.
摘要翻译：用于与天线连接的双工器包括天线端口，发射滤波器，包括具有与天线端口耦合的第一天线侧阻抗的体声波（BAW）谐振器，接收滤波器，包括具有与第二天线侧阻抗耦合的第二天线侧阻抗的BAW谐振器天线端口和耦合在天线端口和地之间的并联电感。选择发射滤波器和接收滤波器的并联电感和第一和第二天线侧阻抗，使得并联电感在史密斯图中将负的第一和第二输入阻抗转变成负方向。

23. 发明授权

US06975183B2 BAW resonator having piezoelectric layers oriented in opposed directions 有权
标题翻译： BAW谐振器具有沿相反方向取向的压电层
公开(公告)号：US06975183B2
公开(公告)日：2005-12-13
申请号：US10821116
申请日：2004-04-08
申请人： Robert Aigner , Martin Handtmann , Stephan Marksteiner , Winfried Nessler
发明人： Robert Aigner , Martin Handtmann , Stephan Marksteiner , Winfried Nessler
IPC分类号： H03H9/00 , H03H9/17 , H03H9/58 , H03H9/54 , H03H3/007 , H03H9/56
CPC分类号： H03H9/583 , H03H9/0095 , H03H9/174 , H03H9/175 , H03H9/176 , H03H9/178 , H03H9/581 , Y10T29/42
摘要： A BAW resonator includes a first piezoelectric layer made of a material oriented toward a first direction, and a second piezoelectric layer made of a material oriented toward a second direction which is opposed to the first direction. The first piezoelectric layer and the second piezoelectric layer are acoustically coupled with each other.
摘要翻译： BAW谐振器包括由朝向第一方向定向的材料制成的第一压电层和由朝向与第一方向相反的第二方向定向的材料制成的第二压电层。第一压电层和第二压电层彼此声学耦合。

24. 发明授权

US08365372B2 Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement 有权
标题翻译：压电振荡电路，制造方法和滤波器布置
公开(公告)号：US08365372B2
公开(公告)日：2013-02-05
申请号：US12271530
申请日：2008-11-14
申请人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
发明人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
IPC分类号： H04R17/10 , H05K3/10
CPC分类号： H03H3/04 , Y10T29/42 , Y10T29/49155 , Y10T29/49156
摘要： In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
摘要翻译：在制造薄膜技术中的压电振荡电路的方法中，其中振荡电路包括预定的固有频率和多个层，首先产生压电振荡电路的至少第一层。随后，通过处理第一层，执行频率校正。随后，产生并处理至少第二层的压电振荡电路，以执行第二频率校正。

25. 发明授权

US08330325B1 Bulk acoustic resonator comprising non-piezoelectric layer 有权
标题翻译：包含非压电层的体声波谐振器
公开(公告)号：US08330325B1
公开(公告)日：2012-12-11
申请号：US13161946
申请日：2011-06-16
申请人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
发明人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
IPC分类号： H03H9/15 , H03H9/125
CPC分类号： H03H9/173 , H03H9/585
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
摘要翻译：在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

26. 发明授权

US07786825B2 Bulk acoustic wave device with coupled resonators 有权
标题翻译：具有耦合谐振器的体声波器件
公开(公告)号：US07786825B2
公开(公告)日：2010-08-31
申请号：US11756521
申请日：2007-05-31
申请人： Martin Handtmann , Jyrki Kaitila
发明人： Martin Handtmann , Jyrki Kaitila
IPC分类号： H03H9/58
CPC分类号： H03H9/605 , H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/60
摘要： A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel.
摘要翻译：体声波器件包括第一和第二谐振器，它们是声学耦合的并且并联电连接。

27. 发明申请

US20100107389A1 METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR 审中-公开
标题翻译：制造用于大容量声学谐振器的电极的方法
公开(公告)号：US20100107389A1
公开(公告)日：2010-05-06
申请号：US12646084
申请日：2009-12-23
申请人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
发明人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
IPC分类号： H04R31/00 , H01L41/083 , H01L41/22
CPC分类号： H03H3/02 , H03H9/171 , H03H9/584 , H03H9/585 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.
摘要翻译：在一个实施例中，描述了一种制造薄膜技术中的谐振器的方法。谐振器包括至少部分地布置在下电极和上电极之间的压电层，所述谐振器形成在衬底上。该方法包括：在衬底上形成谐振器的下电极; 在衬底上沉积和图案化绝缘层，绝缘层包括基本上等于下电极厚度的厚度; 去除所述绝缘层的一部分以部分地暴露所述下电极的表面; 通过化学机械抛光在所述下电极的表面上去除所述绝缘层的一部分; 在下电极上形成压电层; 并在压电层上制造上电极。

28. 发明申请

US20080297279A1 Coupled Resonator Filter with a Filter Section 失效
标题翻译：带过滤器部分的耦合谐振滤波器
公开(公告)号：US20080297279A1
公开(公告)日：2008-12-04
申请号：US11756571
申请日：2007-05-31
申请人： Robert Thalhammer , Martin Handtmann
发明人： Robert Thalhammer , Martin Handtmann
IPC分类号： H03H9/58 , H01L41/22
CPC分类号： H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/605 , Y10T29/42
摘要： A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.
摘要翻译：体声波（BAW）滤波器装置包括第一端口，第二端口，第一耦合谐振器滤波器级，第二耦合谐振器滤波器级和滤波器部分。第一耦合谐振器滤波器级包括连接到第一端口的第一BAW谐振器和声耦合到第一BAW谐振器的第二BAW谐振器。第二耦合谐振器滤波器级包括连接到第二端口的第三BAW谐振器和声耦合到第三BAW谐振器的第四BAW谐振器。滤波器部分包括第五个BAW谐振器，第五个BAW谐振器连接在第二个BAW谐振器和第四个BAW谐振器之间。

29. 发明授权

US07455786B2 Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement 有权
标题翻译：压电振荡电路，制造方法和滤波器布置
公开(公告)号：US07455786B2
公开(公告)日：2008-11-25
申请号：US10869817
申请日：2004-06-16
申请人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
发明人： Robert Aigner , Lueder Elbrecht , Martin Handtmann , Stephan Marksteiner , Winfried Nessler , Hans-Joerg Timme
IPC分类号： H02N2/00 , H01B13/00
CPC分类号： H03H3/04 , Y10T29/42 , Y10T29/49155 , Y10T29/49156
摘要： In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
摘要翻译：在制造薄膜技术中的压电振荡电路的方法中，其中振荡电路包括预定的固有频率和多个层，首先产生压电振荡电路的至少第一层。随后，通过处理第一层，执行频率校正。随后，产生并处理至少第二层的压电振荡电路，以执行第二频率校正。

30. 发明授权

US08209826B2 Method for manufacturing a coupled resonator device 失效
标题翻译：制造耦合谐振器装置的方法
公开(公告)号：US08209826B2
公开(公告)日：2012-07-03
申请号：US12110961
申请日：2008-04-28
申请人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
发明人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
IPC分类号： H04R17/00 , C23F1/00
CPC分类号： H03H3/02 , H03H9/584 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.
摘要翻译：一种耦合谐振器装置的制造方法包括在第一基板上形成第一BAW器件，在第二基板上形成第二BAW器件，以及将第一和第二BAW器件接合，使得结合的第一和第二BAW- 器件夹在第一和第二衬底之间。

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