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    • 22. 发明授权
    • Crystallographic wet chemical etching of III-nitride material
    • III族氮化物材料的晶体湿化学蚀刻
    • US06294475B1
    • 2001-09-25
    • US09338709
    • 1999-06-23
    • E. Fred SchubertDean A. Stocker
    • E. Fred SchubertDean A. Stocker
    • H01L2120
    • H01L21/30617
    • A method of processing III-Nitride epitaxial layer system on a substrate. The process includes exposing non-c-plane surfaces of the III-nitride epitaxial layer system, for example by etching to a selected depth or cleaving, and crystallographical etching the epitaxial layer system in order to obtain crystallographic plane surfaces. In an exemplary embodiment, the III-Nitride epitaxial layer system includes GaN. In accordance with one aspect of the exemplary embodiment, the etching step includes reactive ion etching in a chlorine-based plasma, PEC etching in a KOH solution or cleaving, and the crystallographical etching step includes immersing the epitaxial layer system in a crystallographic etching chemical, such as phosphoric acid, molten KOH, KOH dissolved in ethylene glycol, sodium hydroxide dissolved in ethylene glycol, tetraethyl ammonium hydroxide, or tetramethyl ammonium hydroxide. Speaific etching planes are chosen in accordance with varying the orientation of the exposing step, the etching chemical, and the temperature at which the epitaxial layer system is etched.
    • 一种在衬底上处理III-氮化物外延层系的方法。 该工艺包括将III族氮化物外延层系统的非c面表面曝光,例如通过蚀刻至所选择的深度或切割,以及对外延层系统进行晶体刻蚀以获得晶面平面。 在示例性实施例中,III-氮化物外延层系统包括GaN。 根据示例性实施例的一个方面,蚀刻步骤包括在氯基等离子体中的反应离子蚀刻,在KOH溶液中蚀刻PEC或切割,并且晶体学蚀刻步骤包括将外延层系统浸入结晶蚀刻化学品中, 溶解在乙二醇中的磷酸,熔融的KOH,KOH,溶于乙二醇的氢氧化钠,氢氧化四乙基铵或氢氧化四甲基铵。 根据暴露步骤的方向,蚀刻化学品以及外延层系统被蚀刻的温度来选择突出的蚀刻平面。
    • 27. 发明授权
    • Light-emitting diode with planar omni-directional reflector
    • 具有平面全方位反射器的发光二极管
    • US06784462B2
    • 2004-08-31
    • US10317564
    • 2002-12-12
    • E. Fred Schubert
    • E. Fred Schubert
    • H01L3300
    • H01L33/405H01L33/0079H01L33/14H01L33/387
    • A high extraction efficiency, light-emitting diode having a reflective submount and methods for forming the LED. A light-emitting region is disposed between a top contact and a conductive holder. The region extends beyond an area underlying the top contact. An omni-directional reflector is disposed between the light-emitting region and the conductive holder. According to one embodiment, the reflector comprises one or more electrically conductive contacts configured to correspond to an area beyond the area underlying the top contact. According to one embodiment, the reflector comprises a dielectric layer having a refractive index of between about 1.10 and 2.25, contacts extending through the reflector, and a reflective conductive film.
    • 高提取效率,具有反射底座的发光二极管和用于形成LED的方法。 发光区域设置在顶部触点和导电支架之间。 该区域延伸到顶部触点下方的区域之外。 在发光区域和导电保持器之间设置全向反射器。 根据一个实施例,反射器包括一个或多个导电触头,其被配置为对应于超过顶部触点下方的区域的区域。 根据一个实施例,反射器包括折射率介于约1.10和2.25之间的电介质层,延伸穿过反射器的触点和反射导电膜。