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21. 发明授权

US07795495B2 Transgenic mice for screening for inhibitors of protein aggregation and methods for making and using them 有权
标题翻译：用于筛选蛋白质聚集抑制剂的转基因小鼠及其制备和使用方法
公开(公告)号：US07795495B2
公开(公告)日：2010-09-14
申请号：US11675607
申请日：2007-02-15
申请人： Eliezer Masliah , Edward Rockenstein , Makoto Hashimoto
发明人： Eliezer Masliah , Edward Rockenstein , Makoto Hashimoto
IPC分类号： A01K67/027 , A01K67/00 , G01N33/00
CPC分类号： C12N15/8509 , A01K67/0275 , A01K67/0276 , A01K67/0278 , A01K2207/15 , A01K2217/00 , A01K2217/05 , A01K2217/075 , A01K2227/105 , A01K2267/0312 , A01K2267/0318 , A61K38/00 , A61K48/00 , C07K14/47 , C07K14/4711 , C12N2830/008
摘要： The methodologies of the present invention demonstrate that a critical balance between pro- and anti-amyloidogenic molecules exists that regulates amyloid formation and cell death in Alzheimer's disease and Parkinson's disease. β-Synuclein, the non-amyloidogenic homologue of α-synuclein, is a negative modulator of α-synuclein and Aβ aggregation, having neuroprotective properties against α-synuclein and Aβ neurotoxicity and that β-synuclein and therapeutic agents derived therefrom block amyloidogenesis and neurodegeneration in vivo. The method of the present invention establishes that β-synuclein blocks Aβ aggregation either by direct inhibition of Aβ amyloidogenesis or indirectly via either α-synuclein or its 35 a.a. NAC region, inferring neuroprotective characteristics within the effected cells. The generation of a transgenic mouse line and a cell system overexpressing α-synuclein characterizes the mechanisms by which β-synuclein blocks α-synuclein and Aβ aggregation and that this mechanism offers protection to the cell against amyloid formation as seen in the pathologies of Alzheimer's disease and Parkinson's disease.
摘要翻译：本发明的方法证明，存在调节淀粉样蛋白形成和阿尔茨海默病和帕金森病中的细胞死亡的促淀粉样变性分子和抗淀粉样蛋白形成分子之间的关键平衡。 α-突触核蛋白的非淀粉样变性同源物 - 突触核蛋白是α-突触核蛋白和A＆bgr的负调节剂; 聚集，对α-突触核蛋白和A＆bgr有神经保护作用; 神经毒性以及由此产生的结核分枝杆菌和其衍生的治疗剂在体内阻断淀粉样变性和神经变性。本发明的方法确定了结核分裂素A和bgr; 通过直接抑制A＆bgr的聚集; 淀粉样蛋白发生或间接通过α-突触核蛋白或其35 a.a. NAC区域，推断受影响细胞内的神经保护特征。转基因小鼠系的产生和过表达α-突触核蛋白的细胞系统的特征在于这样的机制，其中β-突触核蛋白阻断α-突触核蛋白和A＆bgr; 并且该机制为阿尔茨海默氏病和帕金森病的病理学中所观察到的针对淀粉样蛋白形成的细胞提供了保护。

22. 发明申请

US20080286914A1 Display device, method of production of the same, and projection type display device 有权
标题翻译：显示装置及其制造方法以及投影型显示装置
公开(公告)号：US20080286914A1
公开(公告)日：2008-11-20
申请号：US12151474
申请日：2008-05-07
申请人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
发明人： Shingo Makimura , Makoto Hashimoto , Yoshiro Okawa , Tomohiro Wada , Kazunori Kataoka
IPC分类号： H01L21/336
CPC分类号： H01L21/02675 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L21/02532 , H01L21/0262 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78609 , H01L29/78633 , H01L29/78675
摘要： A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.
摘要翻译：能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为相对较小，以便抑制光漏电流。晶粒尺寸越小，晶体缺陷就越大。通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。这是因为由于像素的扫描和图像信号的采样，外围晶体管需要比像素晶体管更高的速度操作。

23. 发明授权

US07226746B1 Method for screening for anti-amyloidogenic properties and method for treatment of neurodegenerative disease 有权
标题翻译：筛选抗淀粉样变性的方法和治疗神经变性疾病的方法
公开(公告)号：US07226746B1
公开(公告)日：2007-06-05
申请号：US09806842
申请日：1999-10-06
申请人： Eliezer Masliah , Makoto Hashimoto , Edward Rockenstein
发明人： Eliezer Masliah , Makoto Hashimoto , Edward Rockenstein
IPC分类号： G01N33/53
CPC分类号： G01N33/5058 , G01N2333/47 , G01N2500/00
摘要： In methods for screening treatments for, and treatment of, neurodegenerative diseases, aggregation in neurons of NACP/α-synuclein is measured and expression of a non-amyloidogenic protein is stimulated in order to reduce the level aggregration. For purposes of screening agents for treatment of neurodegenerative disease, oxidative stress in the neuronal cells is stimulated by introducing a mixture of metal-ions and hydrogen peroxide. Examples of appropriate metals include iron, aluminum, and copper. After introduction of the agent under evaluation for stimulation of expression of non-amyloidogenic protein, the effectiveness is measured by testing for a decrease in the level of aggregation of NACP/α-synuclein. In an exemplary embodiment, the non-amyloidogenic protein is β-synuclein. The aggregation of NACP/α-synuclein is dependent upon the concentration of metal ions in the neuronal cells. In addition, the presence of chelating agents appears to modulate the build-up of NACP/α-synuclein aggregates which are responsible for synaptic and neuronal dysfunction.
摘要翻译：在用于筛选神经变性疾病的治疗和治疗方法中，测量NACP /α-突触核蛋白的神经元中的聚集，并刺激非淀粉样蛋白生成蛋白的表达以降低水平聚集。为了筛选用于治疗神经变性疾病的药剂，通过引入金属离子和过氧化氢的混合物刺激神经元细胞中的氧化应激。合适金属的实例包括铁，铝和铜。在引入用于刺激非淀粉样蛋白形成蛋白表达的试剂之后，通过测试NACP /α-突触核蛋白的聚集水平的降低来测量有效性。在一个示例性实施方案中，非淀粉样蛋白生成蛋白是β-突触核蛋白。 NACP /α-突触核蛋白的聚集取决于神经元细胞中金属离子的浓度。此外，螯合剂的存在似乎调节负责突触和神经元功能障碍的NACP /α-突触核蛋白聚集体的积聚。

24. 发明授权

US07054138B2 Electric double layer capacitor and electrolyte battery 失效
标题翻译：电双层电容器和电解液电池
公开(公告)号：US07054138B2
公开(公告)日：2006-05-30
申请号：US11084101
申请日：2005-03-21
申请人： Fumio Tatezono , Seiji Omura , Kiyotaka Ito , Tsuyoshi Komatsu , Makoto Hashimoto
发明人： Fumio Tatezono , Seiji Omura , Kiyotaka Ito , Tsuyoshi Komatsu , Makoto Hashimoto
IPC分类号： H01G9/04
CPC分类号： H01M10/345 , H01G9/016 , H01G9/10 , H01G9/155 , H01G11/68 , H01G11/70 , H01G11/80 , H01M2/08 , H01M10/38 , Y02E60/13
摘要： An electric double layer capacitor is provided with a cell, in which a pair of polarizable electrodes, which are impregnated with an electrolyte, are disposed in opposition on either side of a separator; wherein the polarizable electrodes are provided with collector electrodes, and a peripheral portion of the cell is sealed by a sealing member composed of synthetic resin. The collector electrodes are composed of an alloy made of crystal grains of differing components and the collector electrodes pass through the sealing member while in intimate contact with the sealing member, extending to the outside of the sealing member. A metal plated layer made of crystal grains of a single component is formed on those locations on the collector electrodes that pass through the sealing member.
摘要翻译：电双层电容器设置有电池，其中浸渍有电解质的一对可极化电极相对于隔板的任一侧设置; 其中可极化电极设置有集电极，并且电池的周边部分由由合成树脂构成的密封构件密封。集电极由不同成分的晶粒构成的合金构成，集电体通过密封部件与密封部件紧密接触而延伸到密封部件的外部。在通过密封构件的集电极上的那些位置上形成由单一成分的晶粒构成的金属镀层。

25. 发明授权

US06335772B1 Apparatus and method for a liquid crystal display device having an electrically-conductive light-shading layer formed on a smoothed layer 有权
标题翻译：具有形成在平滑层上的导电性遮光层的液晶显示装置的装置和方法
公开(公告)号：US06335772B1
公开(公告)日：2002-01-01
申请号：US09567050
申请日：2000-05-08
申请人： Takusei Sato , Fumiaki Abe , Makoto Hashimoto
发明人： Takusei Sato , Fumiaki Abe , Makoto Hashimoto
IPC分类号： G02F1136
CPC分类号： G02F1/136209 , G02F1/136227 , G02F2202/104
摘要： To improve the light-shading performance of an electrically-conductive light-shading layer in a liquid crystal display device including polycrystalline SiTFT made on a quartz glass substrate for driving a pixel electrode, and including the electrically-conductive light-shading layer located in a level above the polycrystalline SiTFT and below the pixel electrode, the electrically-conductive light shading layer is stacked on a smoothed inter-layer insulating film which is smoothed by CMP, for example.
摘要翻译：为了提高在用于驱动像素电极的石英玻璃基板上制造的包括多晶SiTFT的液晶显示装置中的导电性遮光层的遮光性能，并且包括位于在多晶SiTFT以上并且在像素电极下方，例如，导电性遮光层层叠在通过CMP平滑化的平滑化的层间绝缘膜上。

26. 发明授权

US06319817B1 Method of forming viahole 失效
标题翻译：通孔形成方法
公开(公告)号：US06319817B1
公开(公告)日：2001-11-20
申请号：US09318254
申请日：1999-05-25
申请人： Hiroshi Komatsu , Makoto Hashimoto , Motoaki Nakamura
发明人： Hiroshi Komatsu , Makoto Hashimoto , Motoaki Nakamura
IPC分类号： H01L214763
CPC分类号： H01L21/76814 , H01L21/76802 , H01L21/76831
摘要： A method of forming a viahole in an interlayer insulating film without formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.
摘要翻译：在层间绝缘膜中形成通孔的方法，而不会在通孔的侧壁上形成凹凸。该方法包括在具有多种绝缘层的多层结构的层间绝缘膜中形成通孔的第一步骤; 在通孔的侧壁上形成侧壁膜的第二步骤; 以及通过蚀刻除去形成在通孔的底部上的自然氧化膜的第三步骤。

27. 发明授权

US5932654A Primer composition for polyolefins 失效
标题翻译：聚烯烃的底漆组合物
公开(公告)号：US5932654A
公开(公告)日：1999-08-03
申请号：US971230
申请日：1997-11-15
申请人： Takeshi Ogawa , Katsuo Miyazaki , Makoto Hashimoto
发明人： Takeshi Ogawa , Katsuo Miyazaki , Makoto Hashimoto
IPC分类号： C08J7/04 , C08F255/02 , C08L23/26 , C08L23/28 , C08L51/00 , C08L51/06 , C08G63/91
CPC分类号： C08F255/02 , C08L51/06
摘要： The present invention provides a primer composition for polyolefins which has sufficient adhesion to polyolefin base materials and excellent resistance to gasohol and high pressure washing of cars. This primer composition for polyolefins comprises: acid anhydride-modified polypropylene chloride (A), which includes polypropylene chloride moiety (a1) and acid anhydride moiety (a2) as bonded thereto, and has a chlorine content of 19.5 to 20.5 wt %, an acid anhydride moiety content of 0.8 to 1.2 wt %, and a weight-average molecular weight of 30,000 to 36,000; and acryl-modified polypropylene chloride (B), which includes polypropylene chloride moiety (b1) and acrylic polymer chain moiety (b2) as grafted thereon, and has a weight-average molecular weight of 30,000 to 200,000, wherein: polypropylene chloride moiety (b1) has a chlorine content of 20 to 30 wt %; acrylic polymer chain moiety (b2) has a glass transition temperature of 60.degree. C. or higher; and the ratio by weight between moieties (b1) and (b2) is b1/b2 =5/95 to 50/50; wherein the ratio by weight between acid anhydride-modified polypropylene chloride (A) and acryl-modified polypropylene chloride (B) is A/B=90/10 to 20/80.
摘要翻译：本发明提供了一种聚烯烃的底漆组合物，其具有对聚烯烃基材的充分粘合性和优异的耐汽油性和耐汽车高压洗涤性能。该聚烯烃用底漆组合物包括：酸酐改性聚丙烯氯化物（A），其包括聚丙烯氯化物部分（a1）和与其结合的酸酐部分（a2），氯含量为19.5-20.5重量％，酸酸酐部分含量为0.8〜1.2重量％，重均分子量为30,000〜36,000; 和丙烯酰基改性聚丙烯氯化物（B），其包括聚丙烯氯化物部分（b1）和丙烯酸聚合物链部分（b2），其重均分子量为30,000至200,000，其中：聚丙烯氯化物部分（b1 ）的氯含量为20〜30重量％。丙烯酸聚合物链部分（b2）的玻璃化转变温度为60℃以上; （b1）和（b2）之间的重量比为b1 / b2 = 5/95〜50/50; 其中，酸酐改性聚丙烯氯化物（A）与丙烯酸改性聚丙烯氯化物（B）的重量比为A / B = 90/10〜20/80。

28. 发明授权

US5619054A CMOS transistor and isolated back gate electrodes on an SOI substrate 失效
标题翻译： CMOS晶体管和SOI衬底上的隔离背栅电极
公开(公告)号：US5619054A
公开(公告)日：1997-04-08
申请号：US468308
申请日：1995-06-06
申请人： Makoto Hashimoto
发明人： Makoto Hashimoto
IPC分类号： H01L27/092 , H01L21/02 , H01L21/336 , H01L21/8238 , H01L21/84 , H01L27/08 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01
CPC分类号： H01L27/1203 , H01L21/84
摘要： The present invention is intended to provide, in MOS transistors used as a bonding layer for silicon regions of an SOI substrate, an nMOS transistor on a silicon region of an SOI substrate which uses a polycrystalline silicon layer as a layer to be bonded with the silicon substrate and a pMOS transistor on another silicon region of the SOI substrate and electrically isolated back gate electrodes through a back gate insulation film on the silicon region side between the silicon regions and a polycrystalline silicon layer. A leak current is reduced and a malfunction of the transistors is eliminated by providing pickup electrodes for the back gate electrodes.
摘要翻译：本发明旨在提供在用作SOI衬底的硅区域的接合层的MOS晶体管中，在SOI衬底的硅区域上的nMOS晶体管，其使用多晶硅层作为与硅键合的层衬底和在SOI衬底的另一硅区上的pMOS晶体管，并且通过硅区域和多晶硅层之间的硅区域侧上的背栅绝缘膜电绝缘背电极电极。通过提供用于背栅电极的拾取电极，泄漏电流减小并且晶体管的故障被消除。

29. 发明申请

US20100223507A1 INFORMATION PROCESSING APPARATUS, METHOD AND COMPUTER READABLE MEDIUM 有权
标题翻译：信息处理装置，方法和计算机可读介质
公开(公告)号：US20100223507A1
公开(公告)日：2010-09-02
申请号：US12560460
申请日：2009-09-16
申请人： Kazuhiko NARUSHIMA , Shigekazu Yamagishi , Makoto Hashimoto , Ken Ikeda , Masafumi Ono , Hinki Ryu , Kenji Kuroishi
发明人： Kazuhiko NARUSHIMA , Shigekazu Yamagishi , Makoto Hashimoto , Ken Ikeda , Masafumi Ono , Hinki Ryu , Kenji Kuroishi
IPC分类号： G06F11/34
CPC分类号： H04N1/00891 , G03G15/5079 , G03G15/55 , H04N1/00344 , H04N1/00978 , H04N1/00986 , H04N2201/0098
摘要： The invention provides an information processing apparatus including: a plurality of abnormality detection sections provided in each of a plurality of detection target portions, that detect an abnormality caused by high temperature at a predetermined first frequency; an indication detecting section that detects an indication that the abnormality will occur; and a controller that controls to set the detection frequency of the plurality of abnormality detection sections to a second frequency which is higher than the first frequency, when the number of times that the indication is detected within a predetermined period is more than a predetermined number of times.
摘要翻译：本发明提供一种信息处理设备，包括：多个异常检测部分，设置在多个检测对象部分中的每一个中，以预定的第一频率检测由高温引起的异常; 指示检测部，其检测出异常的发生的指示; 以及控制器，当在预定时段内检测到所述指示的次数大于预定数量时，控制器将所述多个异常检测部分的检测频率设置为高于所述第一频率的第二频率次

30. 发明授权

US07605303B2 Stress-responsive root-specific genes 失效
标题翻译：应激反应根特异性基因
公开(公告)号：US07605303B2
公开(公告)日：2009-10-20
申请号：US10515095
申请日：2003-05-20
申请人： Setsuko Komatsu , Tomokazu Koshiba , Shinichiro Sawa , Makoto Hashimoto
发明人： Setsuko Komatsu , Tomokazu Koshiba , Shinichiro Sawa , Makoto Hashimoto
IPC分类号： A01H1/00 , C07H21/04 , C07K14/415 , C12N15/00
CPC分类号： C12N15/8271 , C07K14/415
摘要： The present inventors succeeded in cloning a rice stress-responsive gene, RSI1. They discovered that stress-responsive plants can be generated by using the isolated gene, or genes functionally equivalent thereto. The present invention is useful in fields such as plant breeding.
摘要翻译：本发明人成功地克隆了水稻胁迫响应基因RSI1。他们发现通过使用分离的基因或与其功能等同的基因可以产生应激反应性植物。本发明在植物育种等领域中是有用的。

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