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21. 发明申请

US20130168666A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：半导体器件及其形成方法
公开(公告)号：US20130168666A1
公开(公告)日：2013-07-04
申请号：US13433311
申请日：2012-03-29
申请人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
发明人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1251
摘要： A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.
摘要翻译：提供一种半导体器件。第一半导体层设置在衬底上，并且在沟道区域旁边具有沟道区和两个掺杂区。第一电介质层设置在衬底上并覆盖第一半导体层。栅极设置在第一介电层上并对应于第一半导体层的沟道区。第二电介质层设置在第一电介质层上并覆盖栅极。第二半导体层设置在第二电介质层上并对应于栅极。第二半导体层的边界不超过栅极的边界。至少一个第一导电插塞穿过第一和第二电介质层并接触第一半导体层的一个掺杂区域。至少一个触点接触第二半导体层。还提供了一种形成半导体器件的方法。

22. 发明申请

US20100258346A1 PACKAGE OF ENVIRONMENTALLY SENSITIVE ELECTRONIC DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：环境敏感电子设备的包装及其制造方法
公开(公告)号：US20100258346A1
公开(公告)日：2010-10-14
申请号：US12487658
申请日：2009-06-19
申请人： Kuang-Jung Chen , Jia-Chong Ho , Jing-Yi Yan , Shu-Tang Yeh
发明人： Kuang-Jung Chen , Jia-Chong Ho , Jing-Yi Yan , Shu-Tang Yeh
IPC分类号： H01L23/28 , H01L21/56
CPC分类号： H01L23/564 , H01L21/56 , H01L23/293 , H01L23/3121 , H01L51/5243 , H01L51/5246 , H01L51/525 , H01L2251/5338 , H01L2924/0002 , H01L2924/12044 , Y10T29/49002 , H01L2924/00
摘要： A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10−1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.
摘要翻译：提供一种包括第一基板，第二基板，环境敏感电子设备，多个屏障结构和填充物的环境敏感电子设备的封装。第二基板设置在第一基板的上方。环境敏感的电子设备设置在第一基板上并且位于第一基板和第二基板之间。阻挡结构设置在第一基板和第二基板之间，其中阻挡结构围绕环境敏感电子设备，并且阻挡结构的水蒸汽透过率小于10-1g / m 2 /天。填充物设置在第一基板和第二基板之间并且覆盖环境敏感的电子设备和屏障结构。

23. 发明申请

US20100164369A1 APPARATUS OF ORGANIC LIGHT EMITTING DIODE AND PACKAGING METHOD OF THE SAME 有权
标题翻译：有机发光二极管的装置及其包装方法
公开(公告)号：US20100164369A1
公开(公告)日：2010-07-01
申请号：US12487660
申请日：2009-06-19
申请人： Shu-Tang Yeh , Jing-Yi Yan , Kung-Yu Cheng
发明人： Shu-Tang Yeh , Jing-Yi Yan , Kung-Yu Cheng
IPC分类号： H01L51/50 , H01L21/56
CPC分类号： H01L51/5256
摘要： A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.
摘要翻译：描述了有机发光二极管（OLED）的封装方法。首先，提供衬底，并且衬底具有形成在其上的OLED器件。此后，在衬底上形成至少一个保护层，以便完全覆盖OLED器件的周边侧壁。形成保护层的步骤包括在衬底上形成有机层，然后在有机层上形成金属层，其中金属层至少覆盖OLED器件的侧壁。之后，进行氧化处理，以使金属层的一部分氧化。

24. 发明申请

US20090267075A1 OGANIC THIN FILM TRANSISTOR AND PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL 审中-公开
标题翻译：有机薄膜晶体管和像素结构及其制造方法和显示面板
公开(公告)号：US20090267075A1
公开(公告)日：2009-10-29
申请号：US12371925
申请日：2009-02-17
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Jing-Yi Yan , Jia-Chong Ho
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Jing-Yi Yan , Jia-Chong Ho
IPC分类号： H01L51/52 , H01L21/336
CPC分类号： H01L27/3274 , H01L27/3248 , H01L51/0022 , H01L51/0545 , H01L51/102 , H01L51/5221
摘要： A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain.
摘要翻译：对有机薄膜晶体管的制造方法进行说明。其中具有开口的图案化绝缘层形成在基板上。在绝缘层的开口部形成有栅极，在栅极上形成栅极绝缘层。通过印刷工艺在栅极绝缘层上形成导电材料层。栅绝缘层和导电材料层之一是疏水的或亲水的，另一个是亲水的或疏水的，使得导电材料层自然地分离到栅极绝缘层的两侧以形成源极和漏极。在源极和漏极之间的栅极绝缘层上形成有源层。

25. 发明申请

US20070160813A1 THIN FILM TRANSISTOR, ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管，有机电致发光显示装置及其制造方法
公开(公告)号：US20070160813A1
公开(公告)日：2007-07-12
申请号：US11309735
申请日：2006-09-19
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： G03G7/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘体以覆盖栅极。源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。在源极/漏极层上形成隔离层，并且具有用于暴露栅绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

26. 发明申请

US20110254061A1 TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20110254061A1
公开(公告)日：2011-10-20
申请号：US12903220
申请日：2010-10-13
申请人： Jing-Yi Yan , Chu-Yin Hung , Hsiao-Chiang Yao , Yen-Yu Wu , Yen-Shih Huang
发明人： Jing-Yi Yan , Chu-Yin Hung , Hsiao-Chiang Yao , Yen-Yu Wu , Yen-Shih Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.
摘要翻译：一种晶体管，包括栅极，有源堆叠结构，电介质层，源极和漏极。栅极位于电介质层的第一表面之上。包括第一有源层和第二有源层的有源堆叠结构位于电介质层的第二表面上。源极和漏极位于电介质层的第二表面之上并且位于有源堆叠结构的两侧，并且在有源堆叠结构的第一有源层和第二有源层之间延伸。

27. 发明授权

US07741163B2 Method of fabricating thin film transistor and organic electro-luminescent display device 有权
标题翻译：制造薄膜晶体管和有机电致发光显示装置的方法
公开(公告)号：US07741163B2
公开(公告)日：2010-06-22
申请号：US11309735
申请日：2006-09-19
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： H01L21/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘体以覆盖栅极。源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。在源极/漏极层上形成隔离层，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

28. 发明申请

US20100148654A1 SUBSTRATE, FABRICATION METHOD THEREOF AND A DISPLAY USING THE SAME 有权
标题翻译：基板，其制造方法和使用该显示器的显示器
公开(公告)号：US20100148654A1
公开(公告)日：2010-06-17
申请号：US12424536
申请日：2009-04-15
申请人： Jing-Yi Yan , Shu-Tang Yeh
发明人： Jing-Yi Yan , Shu-Tang Yeh
IPC分类号： H01J1/88 , H05K3/30 , H05K1/18
CPC分类号： H05K1/028 , G02F1/133305 , G02F2001/133302 , H05K3/0014 , H05K3/0044 , H05K2201/0191 , H05K2201/09036 , H05K2203/0108
摘要： A substrate board, a fabricating method thereof, and a display using the same are provided. The substrate board includes a substrate having at least a rigid area and at least a flexible area, and at least an electronic component disposed on a surface of the substrate, wherein the rigid area is thicker than the flexible area. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid area and the flexible area may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.
摘要翻译：提供了基板，其制造方法和使用其的显示器。衬底板包括至少具有刚性区域和至少柔性区域的衬底，以及至少设置在衬底表面上的电子部件，其中刚性区域比柔性区域厚。可以在基板上另外设置图案化的高广泛材料以提高其可靠性。刚性区域和柔性区域可以由模具或切割器形成。通过使用上述结构，当基板处于应力时，电子部件的影响较小，从而保持良好的特性。

29. 发明申请

US20090271981A1 METHOD OF FABRICATING A DEVICE WITH FLEXIBLE SUBSTRATE AND METHOD FOR STRIPPING FLEXIBLE-SUBSTRATE 有权
标题翻译：用柔性基板制造器件的方法和用于剥离柔性衬底的方法
公开(公告)号：US20090271981A1
公开(公告)日：2009-11-05
申请号：US12497297
申请日：2009-07-02
申请人： TAMG-SHIANG HU , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
发明人： TAMG-SHIANG HU , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
IPC分类号： B21D39/00
CPC分类号： H01L21/2007 , H01L51/0097 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y10T29/4913
摘要： A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.
摘要翻译：用于制造具有柔性衬底的器件的方法包括首先提供刚性衬底。接下来，可以在刚性基板上形成接合层，然后在接合层上直接形成柔性基板。柔性基底完全接触界面层。然后在柔性基板上形成器件结构。

30. 发明申请

US20070054440A1 Method for fabricating a device with flexible substrate and method for stripping flexible-substrate 有权
标题翻译：用于制造具有柔性基板的装置的方法和用于剥离柔性基板的方法
公开(公告)号：US20070054440A1
公开(公告)日：2007-03-08
申请号：US11256399
申请日：2005-10-19
申请人： Tarng-Shiang Hu , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
发明人： Tarng-Shiang Hu , Jing-Yi Yan , Jia-Chong Ho , Cheng-Chung Lee
IPC分类号： H01L21/8232 , H01L21/335
CPC分类号： H01L21/2007 , H01L51/0097 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y10T29/4913
摘要： A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.
摘要翻译：用于制造具有柔性衬底的器件的方法包括提供刚性衬底。然后，柔性衬底层直接形成在刚性衬底上，其中柔性衬底层完全接触刚性衬底并形成接触界面。在柔性基板层上形成器件结构。或者，可以在刚性衬底上形成界面层，然后在界面层上直接形成柔性衬底层。因此，可以在基本上没有应力的条件下从刚性基板剥离柔性基板层。

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