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21. 发明申请

US20100127270A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20100127270A1
公开(公告)日：2010-05-27
申请号：US12372700
申请日：2009-02-17
申请人： Jing-Yi Yan , Liang-Hsiang Chen
发明人： Jing-Yi Yan , Liang-Hsiang Chen
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/6675 , H01L29/7869 , H01L51/0545
摘要： A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，至少一个无机材料层，至少一个电介质层，源极，漏极和有源层。栅极设置在基板上。无机材料层覆盖门。包括至少一种有机材料的电介质层覆盖基板，并且具有露出栅极上的无机材料层的开口。源极和漏极分别设置在电介质层上，并且部分无机层分别由开口露出。在源极和漏极之间存在沟道区。有源层设置在沟道区上。

22. 发明授权

US08373168B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08373168B2
公开(公告)日：2013-02-12
申请号：US12859278
申请日：2010-08-19
申请人： Jing-Yi Yan , Liang-Hsiang Chen
发明人： Jing-Yi Yan , Liang-Hsiang Chen
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L29/6675 , H01L29/7869 , H01L51/0545
摘要： A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.
摘要翻译：提供薄膜晶体管。薄膜晶体管包括栅极，至少无机材料层，至少一个介电层，源极，漏极和有源层。有源层位于衬底上。源极和漏极覆盖有源层的一部分和衬底的一部分。在源极和漏极之间存在沟道区。无机材料层被填充到通道区域中。至少包括有机材料的电介质层覆盖无机材料，源极和漏极。栅极设置在电介质层上。

23. 发明申请

US20120012819A1 ORGANIC SEMICONDUCTOR COMPOUNDS 有权
标题翻译：有机半导体化合物
公开(公告)号：US20120012819A1
公开(公告)日：2012-01-19
申请号：US12838500
申请日：2010-07-19
申请人： Liang-Hsiang Chen , Ming-Chou Chen , Jing-Yi Yan , Yo-Chi Liang , Xiu Zhang
发明人： Liang-Hsiang Chen , Ming-Chou Chen , Jing-Yi Yan , Yo-Chi Liang , Xiu Zhang
IPC分类号： H01L51/30 , C07D519/00 , C07D495/14
CPC分类号： H01L51/0074 , C07D495/14 , C07D519/00
摘要： The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2′,3′-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2′,3′-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.
摘要翻译：本发明涉及有机半导体化合物，包括苯并二噻吩（3,2-b：2'，3'-d）噻吩（BDTT）和苯并二噻吩（3,2-b：2'，3'-d）噻吩。本公开的有机化合物具有高的抗氧化性和高的电稳定性。因此，具有由本公开的有机化合物构成的有机半导体层的半导体器件具有稳定的电性能，并且提高了半导体器件的可靠性。

24. 发明申请

US20130140635A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130140635A1
公开(公告)日：2013-06-06
申请号：US13427904
申请日：2012-03-23
申请人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
发明人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/66765 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.
摘要翻译：半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。第一绝缘层覆盖栅极和第一电极。有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

25. 发明授权

US09165947B2 Semiconductor device, TFT, capacitor and method of manufacturing the same 有权
标题翻译：半导体器件，TFT，电容器及其制造方法
公开(公告)号：US09165947B2
公开(公告)日：2015-10-20
申请号：US13427904
申请日：2012-03-23
申请人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
发明人： Jing-Yi Yan , Chih-Chieh Hsu , Hsiao-Chiang Yao , Chu-Yin Hung
IPC分类号： H01L29/786 , H01L27/12 , H01L21/336
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L29/66765 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.
摘要翻译：半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。第一绝缘层覆盖栅极和第一电极。有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

26. 发明授权

US09053557B2 System and method for improving visual effect of a display device 有权
标题翻译：用于改善显示装置的视觉效果的系统和方法
公开(公告)号：US09053557B2
公开(公告)日：2015-06-09
申请号：US13310328
申请日：2011-12-02
申请人： Chen-Wei Lin , King-Yuan Ho , Jing-Yi Yan
发明人： Chen-Wei Lin , King-Yuan Ho , Jing-Yi Yan
IPC分类号： G09G5/02 , G06T3/40 , G09G3/20
CPC分类号： G06T3/4069 , G09G3/2003 , G09G2340/0407
摘要： A display system is disclosed. The display system comprises a display device; and a computing device. The computing device executes instructions to receive a first plurality of sub-pixel values of a first plurality of sub-pixels of an image. The first plurality of sub-pixels have a plurality of colors. The computing device further executes instructions to select a first sub-pixel of the first plurality of sub-pixels. The first sub-pixel has a first color and is spatially close to a second sub-pixel of the first plurality of sub-pixels. The second sub-pixel has the first color. The computing device further executes instructions to generate a second plurality of sub-pixel values of a second plurality of sub-pixels based on at least first and second sub-pixel values corresponding to the first and second sub-pixels of the first plurality of sub-pixels.
摘要翻译：公开了一种显示系统。显示系统包括显示装置; 和计算设备。计算设备执行指令以接收图像的第一多个子像素的第一多个子像素值。第一多个子像素具有多种颜色。计算设备还执行指令以选择第一多个子像素的第一子像素。第一子像素具有第一颜色并且在空间上接近第一多个子像素的第二子像素。第二子像素具有第一颜色。所述计算装置还执行指令，以基于与所述第一多个子像素的所述第一和第二子像素对应的至少第一和第二子像素值来生成第二多个子像素的第二多个子像素值 -像素。

27. 发明申请

US20110285610A1 PIXEL STRUCTURE AND PIXEL CIRCUIT HAVING MULTI-DISPLAY MEDIUMS 有权
标题翻译：具有多显示介质的像素结构和像素电路
公开(公告)号：US20110285610A1
公开(公告)日：2011-11-24
申请号：US12911734
申请日：2010-10-26
申请人： Jing-Yi Yan , Yen-Shih Huang , Chen-Wei Lin , Hua-Chi Cheng
发明人： Jing-Yi Yan , Yen-Shih Huang , Chen-Wei Lin , Hua-Chi Cheng
IPC分类号： G09G3/20
CPC分类号： G09G3/20 , G02F1/1343 , G02F1/13439 , G02F1/136213 , G02F1/136286 , G02F2201/40 , G09G3/3648 , G09G2300/0426 , G09G2300/0465
摘要： A pixel structure and a pixel circuit having multi-display mediums are provided. A storage capacitor and a first display medium are disposed in different layers, so as to overlap the storage capacitor with a pixel electrode of the first display medium. Accordingly, an area of the first display medium can be increased for enlarging an aperture ratio of the pixel. Furthermore, because a third pixel electrode is disposed in a conductive layer, the third pixel electrode can control/drive a second display medium under a substrate.
摘要翻译：提供具有多显示介质的像素结构和像素电路。存储电容器和第一显示介质设置在不同的层中，以便使存储电容器与第一显示介质的像素电极重叠。因此，为了扩大像素的开口率，可以增加第一显示介质的面积。此外，由于第三像素电极设置在导电层中，所以第三像素电极可以在基板下控制/驱动第二显示介质。

28. 发明申请

US20130168666A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：半导体器件及其形成方法
公开(公告)号：US20130168666A1
公开(公告)日：2013-07-04
申请号：US13433311
申请日：2012-03-29
申请人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
发明人： Jing-Yi Yan , Chen-Wei Lin , Chih-Chieh Hsu , King-Yuan Ho
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/1251
摘要： A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.
摘要翻译：提供一种半导体器件。第一半导体层设置在衬底上，并且在沟道区域旁边具有沟道区和两个掺杂区。第一电介质层设置在衬底上并覆盖第一半导体层。栅极设置在第一介电层上并对应于第一半导体层的沟道区。第二电介质层设置在第一电介质层上并覆盖栅极。第二半导体层设置在第二电介质层上并对应于栅极。第二半导体层的边界不超过栅极的边界。至少一个第一导电插塞穿过第一和第二电介质层并接触第一半导体层的一个掺杂区域。至少一个触点接触第二半导体层。还提供了一种形成半导体器件的方法。

29. 发明申请

US20100164369A1 APPARATUS OF ORGANIC LIGHT EMITTING DIODE AND PACKAGING METHOD OF THE SAME 有权
标题翻译：有机发光二极管的装置及其包装方法
公开(公告)号：US20100164369A1
公开(公告)日：2010-07-01
申请号：US12487660
申请日：2009-06-19
申请人： Shu-Tang Yeh , Jing-Yi Yan , Kung-Yu Cheng
发明人： Shu-Tang Yeh , Jing-Yi Yan , Kung-Yu Cheng
IPC分类号： H01L51/50 , H01L21/56
CPC分类号： H01L51/5256
摘要： A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.
摘要翻译：描述了有机发光二极管（OLED）的封装方法。首先，提供衬底，并且衬底具有形成在其上的OLED器件。此后，在衬底上形成至少一个保护层，以便完全覆盖OLED器件的周边侧壁。形成保护层的步骤包括在衬底上形成有机层，然后在有机层上形成金属层，其中金属层至少覆盖OLED器件的侧壁。之后，进行氧化处理，以使金属层的一部分氧化。

30. 发明申请

US20110254061A1 TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20110254061A1
公开(公告)日：2011-10-20
申请号：US12903220
申请日：2010-10-13
申请人： Jing-Yi Yan , Chu-Yin Hung , Hsiao-Chiang Yao , Yen-Yu Wu , Yen-Shih Huang
发明人： Jing-Yi Yan , Chu-Yin Hung , Hsiao-Chiang Yao , Yen-Yu Wu , Yen-Shih Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.
摘要翻译：一种晶体管，包括栅极，有源堆叠结构，电介质层，源极和漏极。栅极位于电介质层的第一表面之上。包括第一有源层和第二有源层的有源堆叠结构位于电介质层的第二表面上。源极和漏极位于电介质层的第二表面之上并且位于有源堆叠结构的两侧，并且在有源堆叠结构的第一有源层和第二有源层之间延伸。

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