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21. 发明申请

US20120204236A1 Systems and Methods for User Access Authentication Based on Network Access Point 有权
标题翻译：基于网络接入点的用户接入认证系统与方法
公开(公告)号：US20120204236A1
公开(公告)日：2012-08-09
申请号：US13423953
申请日：2012-03-19
申请人： Lee Chen , John Chiong , Yang Yu
发明人： Lee Chen , John Chiong , Yang Yu
IPC分类号： G06F21/20
CPC分类号： H04L63/08 , G11C7/24 , H04L63/107 , H04W12/06 , H04W12/08
摘要： Systems and methods of authenticating user access based on an access point to a secure data network include a secure data network having a plurality of a network access points serving as entry points for a user to access the secure data network using a user device. The user is associated with a user identity, each network access point with a network access point identity. The user uses a user device to send an access request, requesting access to the secure data network, to the network access point, which then sends an authentication request to an identity server. The identity server processes the authentication request, by validating the combination of the user identity and the network access point identity, and responds with an authentication response, granting or denying access, as communicated to the user device via an access response.
摘要翻译：基于对安全数据网络的接入点认证用户接入的系统和方法包括具有多个网络接入点的安全数据网络，该网络接入点用作用户使用用户设备访问安全数据网络的入口点。用户与用户身份相关联，每个网络接入点具有网络接入点身份。用户使用用户设备向网络接入点发送访问安全数据网络的访问请求，网络接入点然后向认证服务器发送认证请求。身份服务器通过验证用户身份和网络接入点身份的组合来处理身份验证请求，并通过访问响应传达给用户设备的认证响应，授予或拒绝访问进行响应。

22. 外观设计

USD656899S1 Mobile vehicle dual power adapter 有权
标题翻译：手机双电源适配器
公开(公告)号：USD656899S1
公开(公告)日：2012-04-03
申请号：US29375564
申请日：2010-09-24
申请人： Brad Webb , Roger Widner , Vita Yang , Lee Chen
设计人： Brad Webb , Roger Widner , Vita Yang , Lee Chen

23. 发明申请

US20100235880A1 System and Method to Apply Network Traffic Policy to an Application Session 有权
标题翻译：将网络流量策略应用于应用会话的系统和方法
公开(公告)号：US20100235880A1
公开(公告)日：2010-09-16
申请号：US12788339
申请日：2010-05-27
申请人： Lee Chen , John Chiong , Dennis Oshiba
发明人： Lee Chen , John Chiong , Dennis Oshiba
IPC分类号： G06F21/20 , G06F15/173 , G06F15/16
CPC分类号： H04L63/0263 , G06F21/00 , G06F21/44 , H04L12/66 , H04L51/04 , H04L63/02 , H04L63/0227 , H04L63/0236 , H04L63/0245 , H04L63/0254 , H04L63/029 , H04L63/0407 , H04L63/08 , H04L63/10 , H04L63/102 , H04L63/105 , H04L63/164 , H04L63/168 , H04L63/20 , H04L63/30 , H04L65/1026 , H04L67/10 , H04L67/1004 , H04L67/104 , H04L67/141 , H04L67/22 , H04L67/306 , H04L67/42 , H04L69/28 , H04L69/329 , H04M1/72547 , H04W12/00
摘要： Method for applying a security policy to an application session, includes: recognizing the application session between a network and an application via a security gateway; determining by the security gateway a user identity of the application session using information about the application session; obtaining by the security gateway the security policy comprising network parameters mapped to the user identity; and applying the security policy to the application session by the security gateway. The user identity may be a network user identity or an application user identity recognized from packets of the application session. The security policy may comprise a network traffic policy mapped and/or a document access policy mapped to the user identity, where the network traffic policy is applied to the application session. The security gateway may further generate a security report concerning the application of the security policy to the application session.
摘要翻译：将安全策略应用于应用会话的方法包括：通过安全网关识别网络和应用之间的应用会话; 使用关于应用会话的信息由安全网关确定应用会话的用户身份; 由安全网关获取包括映射到用户身份的网络参数的安全策略; 并将安全策略应用于安全网关的应用会话。用户身份可以是从应用会话的分组识别的网络用户身份或应用用户身份。安全策略可以包括被映射的网络流量策略和/或映射到用户身份的文档访问策略，其中将网络流量策略应用于应用会话。安全网关还可以生成关于安全策略应用于应用会话的安全报告。

24. 发明申请

US20100193471A1 METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION 有权
标题翻译：用于控制辐射分布的方法和系统
公开(公告)号：US20100193471A1
公开(公告)日：2010-08-05
申请号：US12754662
申请日：2010-04-06
申请人： Merritt FUNK , David V. Horak , Eric J. Strang , Lee Chen
发明人： Merritt FUNK , David V. Horak , Eric J. Strang , Lee Chen
IPC分类号： C23F1/00 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
摘要翻译：等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

25. 发明授权

US07754615B2 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US07754615B2
公开(公告)日：2010-07-13
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/302
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

26. 发明授权

US07744720B2 Suppressor of hollow cathode discharge in a shower head fluid distribution system 有权
标题翻译：喷淋头流体分配系统中的空心阴极放电抑制器
公开(公告)号：US07744720B2
公开(公告)日：2010-06-29
申请号：US11951861
申请日：2007-12-06
申请人： Lee Chen , Lin Xu
发明人： Lee Chen , Lin Xu
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/505 , B21K21/08
CPC分类号： H01J37/32623 , H01J37/3244 , H01J2237/0206 , Y10T29/41 , Y10T29/49432
摘要： A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the chamber element comprises a reentrant cavity formed in the first surface and a conduit having an inlet coupled to the reentrant cavity and an outlet coupled to the second surface. Furthermore, the chamber component comprises an insertable member configured to couple with the reentrant cavity, the insertable member having one or more passages formed there through and each of the one or more passages are aligned off-axis from the conduit, wherein the one or more passages are configured to receive a process fluid on the supply side and the conduit is configured to distribute the process fluid from the one or more passages on the process side.
摘要翻译：描述了被配置为联接到处理室的室部件和制造室部件的方法。室部件包括室元件，其包括在腔室元件的供给侧上的第一表面和腔室元件的过程侧上的第二表面，其中，腔室元件包括形成在第一表面中的折返腔，以及具有入口耦合到所述凹陷腔和连接到所述第二表面的出口。此外，腔室部件包括被配置为与凹陷腔联接的可插入部件，该可插入部件具有一个或多个通道，该通道形成于此处，并且该一个或多个通道中的每个通道与管道离轴对准，其中一个或多个通道被配置为在供应侧上接收过程流体，并且导管被配置成从处理侧上的一个或多个通道分配过程流体。

27. 发明授权

US07718030B2 Method and system for controlling radical distribution 有权
标题翻译：控制激进分布的方法和系统
公开(公告)号：US07718030B2
公开(公告)日：2010-05-18
申请号：US11233025
申请日：2005-09-23
申请人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
发明人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
摘要翻译：等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

28. 发明授权

US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
标题翻译：动态温度背面气体控制，可提高基板内工艺的均匀性
公开(公告)号：US07674636B2
公开(公告)日：2010-03-09
申请号：US11684818
申请日：2007-03-12
申请人： Radha Sundararajan , Lee Chen , Merritt Funk
发明人： Radha Sundararajan , Lee Chen , Merritt Funk
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.
摘要翻译：提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性。

29. 发明授权

US07647635B2 System and method to resolve an identity interactively 有权
标题翻译：以交互方式解析身份的系统和方法
公开(公告)号：US07647635B2
公开(公告)日：2010-01-12
申请号：US11592473
申请日：2006-11-02
申请人： Lee Chen , John Chiong , Philip Kwan
发明人： Lee Chen , John Chiong , Philip Kwan
IPC分类号： G06F11/30 , G06F15/173
CPC分类号： H04L63/1416 , G06F21/6263 , G06F2221/2105 , G06F2221/2129 , G06F2221/2151 , H04L63/1433
摘要： A system and method for resolving an identity includes a security console, which displays security information regarding a secure network. The security information includes at least a first identity used to access the secure network. An operator selects the first identity, and the security console sends it to a resolver. The resolver connects with an identity server to find an access session record with an identity matching the first identity. A second identity is extracted from this record, and the resolver returns a result that includes the second identity. The security console displays the second identity; The first identity can be a user identity of a user, where the second identity is corresponding host identity, or vise versa. In this manner, an efficient interface to security information is provided to an operator, where the operator may resolve a user/host identity to a host/user identity interactively.
摘要翻译：用于解决身份的系统和方法包括安全控制台，其显示关于安全网络的安全信息。安全信息至少包括用于访问安全网络的第一身份。操作员选择第一个身份，安全控制台将其发送到解析器。解析器与身份服务器连接，以查找具有与第一身份匹配的身份的访问会话记录。从该记录中提取第二个身份，解析器返回包含第二个身份的结果。安全控制台显示第二个身份; 第一身份可以是用户的用户身份，其中第二身份是相应的主机身份，反之亦然。以这种方式，向运营商提供对安全信息的有效接口，其中运营商可以交互地将用户/主机身份解析为主机/用户身份。

30. 发明授权

US07642193B2 Method of treating a mask layer prior to performing an etching process 有权
标题翻译：在进行蚀刻处理之前处理掩模层的方法
公开(公告)号：US07642193B2
公开(公告)日：2010-01-05
申请号：US11499680
申请日：2006-08-07
申请人： Peter L. G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
发明人： Peter L. G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01J37/32027 , H01J37/32082 , H01L21/0337
摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.
摘要翻译：描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。为了减少图案定义的损失，例如线边缘粗糙度效应，在进行处理之前，用含氧等离子体或含卤素的等离子体或惰性气体等离子体或其两种或更多种的组合处理掩模层蚀刻工艺。

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