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    • 22. 发明申请
    • STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH
    • 铰链类型MEMS开关的结构和方法
    • US20080014663A1
    • 2008-01-17
    • US11776835
    • 2007-07-12
    • Louis HsuTimothy DaltonLawrence ClevengerCarl RadensKwong WongChih-Chao Yang
    • Louis HsuTimothy DaltonLawrence ClevengerCarl RadensKwong WongChih-Chao Yang
    • H01L21/00
    • H01H59/0009H01H1/20H01H2001/0084H01H2001/0089Y10T29/49105Y10T29/49128Y10T29/49155Y10T29/49204Y10T29/49208
    • A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a rigid movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the rigid movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.
    • 描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。 构造在基板上的MEMS开关由两个柱构成,每个端部终止于盖; 刚性可移动导电板,其表面终止于两个相对边缘中的每一个中的环中,所述环松散地连接到引导柱; 上下电极对; 并且由刚性可移动导电板连接和断开的上下互连布线。 当处于通电状态时,低电压电平施加到上电极对,而下电极对接地。 导电板向上移动,使两条上部互连线路短路。 相反,当电压施加到下电极对时,导电板向下移动,而上电极对接地,使两个下互连布线短路并打开上布线。 由此形成的MEMS开关产生均匀的力,其为导电板提供平移运动,位移由两个垂直柱引导。
    • 27. 发明申请
    • STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH
    • 铰链类型MEMS开关的结构和方法
    • US20060145792A1
    • 2006-07-06
    • US10905449
    • 2005-01-05
    • Louis HsuTimothy DaltonLawrence ClevengerCarl RadensKwong WongChih-Chao Yang
    • Louis HsuTimothy DaltonLawrence ClevengerCarl RadensKwong WongChih-Chao Yang
    • H01H51/22
    • H01H59/0009H01H1/20H01H2001/0084H01H2001/0089Y10T29/49105Y10T29/49128Y10T29/49155Y10T29/49204Y10T29/49208
    • A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.
    • 描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。 构造在基板上的MEMS开关由两个柱构成,每个端部终止于盖; 可移动导电板,其表面终止于两个相对边缘中的每一个中的环中,所述环松动地连接到引导柱; 上下电极对; 以及由可动导电板连接和断开的上下互连布线。 当处于通电状态时,低电压电平施加到上电极对,而下电极对接地。 导电板向上移动,使两条上部互连线路短路。 相反,当电压施加到下电极对时,导电板向下移动,而上电极对接地,使两个下互连布线短路并打开上布线。 由此形成的MEMS开关产生均匀的力,其为导电板提供平移运动,位移由两个垂直柱引导。
    • 28. 发明授权
    • Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
    • 形成难熔金属 - 硅 - 氮电容器和结构的方法
    • US06707097B2
    • 2004-03-16
    • US10346437
    • 2003-01-16
    • Cyril Cabral, Jr.Lawrence ClevengerLouis HsuKeith Kwong Hon Wong
    • Cyril Cabral, Jr.Lawrence ClevengerLouis HsuKeith Kwong Hon Wong
    • H01L218242
    • H01L28/75C23C14/0073C23C14/0641H01L21/2855H01L21/28568
    • A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. N2 gas is then flown into the sputtering chamber until that the concentration of N2 gas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The N2 gas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.
    • 描述了在半导体结构中形成难熔金属 - 硅 - 氮电容器的方法和形成的结构。 在该方法中,首先将预处理的半导体衬底定位在溅射室中。 然后将Ar气体流入溅射室,以从耐火金属硅化物靶或从难熔金属和硅的两个靶溅射沉积在衬底上的第一难熔金属 - 硅 - 氮层。 然后将N 2气体流入溅射室,直到室内的N 2气体的浓度至少为35%,以在第一难熔金属 - 硅 - 氮层的顶部溅射沉积第二难熔金属 - 硅 - 氮层。 然后停止N 2气流以在第二难熔金属 - 硅 - 氮层的顶部溅射沉积第三难熔金属 - 硅 - 氮层。 然后将难熔金属硅 - 氮的多层堆叠光刻形成电容器。