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    • 21. 发明授权
    • Semiconductor memory input/output device
    • 半导体存储器输入/输出装置
    • US08009504B2
    • 2011-08-30
    • US12339389
    • 2008-12-19
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C8/00
    • G11C7/1045G11C7/1051G11C7/1057G11C7/1066G11C7/1078G11C7/1084G11C7/1093G11C7/22
    • A semiconductor memory input/output device includes selection pads used to input and output signals for multiple operation modes and having multiple functions, a control signal generator for outputting setting signals and a mask control signal, a lower input/output unit including a lower output buffer for outputting a read data strobe signal to a selection pad and a lower input buffer for receiving a lower data mask signal from the selection pad, and selecting one operation of the lower output buffer and the lower input buffer, and an upper input/output unit including an upper output buffer for outputting an inverted read data strobe signal to the second selection pad and an upper input buffer for receiving an upper data mask signal from the second selection pad, and selecting one operation of the upper output buffer and the upper input buffer.
    • 半导体存储器输入/输出装置包括用于输入和输出用于多个操作模式的信号并具有多个功能的选择焊盘,用于输出设置信号的控制信号发生器和掩模控制信号,包括下部输出缓冲器 用于将选择焊盘的读取数据选通信号输出到选择焊盘的下部数据屏蔽信号,以及选择下部输出缓冲器和下部输入缓冲器的一个动作,以及上部输入输出部 包括用于向第二选择焊盘输出反转的读数据选通信号的上输出缓冲器和用于从第二选择焊盘接收上数据掩码信号的上输入缓冲器,以及选择上输出缓冲器和上输入缓冲器的一个操作 。
    • 22. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07697348B2
    • 2010-04-13
    • US12366357
    • 2009-02-05
    • Ho-Youb Cho
    • Ho-Youb Cho
    • G11C7/10
    • G11C7/1078G11C7/1039G11C7/1045G11C7/1087G11C7/1093G11C7/1096G11C2207/107
    • A first input buffer receives sequentially inputted first data. A first data selector selectively transfers the first data from the first input buffer in accordance with a data input mode. A first data alignment circuit aligns and outputs the data from the first data selector. A second input buffer receives sequentially inputted second data in accordance with the data input mode. A second data selector selectively transfers the data of the first input buffer or of the second input buffer, in accordance with the data input mode. A first data alignment circuit aligns and outputs the data from the second data selector.
    • 第一输入缓冲器接收顺序输入的第一数据。 第一数据选择器根据数据输入模式选择性地传送来自第一输入缓冲器的第一数据。 第一数据对准电路对准并输出来自第一数据选择器的数据。 第二输入缓冲器根据数据输入模式接收顺序输入的第二数据。 第二数据选择器根据数据输入模式选择性地传送第一输入缓冲器或第二输入缓冲器的数据。 第一数据对准电路对准并输出来自第二数据选择器的数据。
    • 23. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07573757B2
    • 2009-08-11
    • US12073294
    • 2008-03-04
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C11/063
    • G11C7/1078G11C7/1048G11C7/1087G11C7/1093G11C7/1096
    • Disclosed herein is a semiconductor memory device for reducing a current consumption used for operating a write command or a read command. The semiconductor memory device includes a global data latch unit for latching a global data loaded on a global data line in response to a first write enable signal to thereby generate a global latch data; a local data write driving unit for receiving the global latch data to output a local data to a local data line in response to a second write enable signal; and a write driver control unit for generating the first write enable signal and the second write enable signal to inactivate the first write enable signal when a write operation is not performed.
    • 这里公开了一种用于减少用于操作写入命令或读取命令的电流消耗的半导体存储器件。 半导体存储器件包括全局数据锁​​存单元,用于响应于第一写使能信号来锁存加载在全局数据线上的全局数据,从而生成全局锁存数据; 本地数据写驱动单元,用于接收全局锁存数据,以响应于第二写使能信号将本地数据输出到本地数据线; 以及写入驱动器控制单元,用于在不执行写入操作时产生第一写入使能信号和第二写入使能信号以使第一写入使能信号失活。
    • 25. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07359256B2
    • 2008-04-15
    • US11312610
    • 2005-12-21
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C7/00
    • G11C7/1078G11C7/1048G11C7/1087G11C7/1093G11C7/1096
    • Disclosed herein is a semiconductor memory device for reducing a current consumption used for operating a write command or a read command. The semiconductor memory device includes a global data latch unit for latching a global data loaded on a global data line in response to a first write enable signal to thereby generate a global latch data; a local data write driving unit for receiving the global latch data to output a local data to a local data line in response to a second write enable signal; and a write driver control unit for generating the first write enable signal and the second write enable signal to inactivate the first write enable signal when a write operation is not performed.
    • 这里公开了一种用于减少用于操作写入命令或读取命令的电流消耗的半导体存储器件。 半导体存储器件包括全局数据锁​​存单元,用于响应于第一写使能信号来锁存加载在全局数据线上的全局数据,从而生成全局锁存数据; 本地数据写驱动单元,用于接收全局锁存数据,以响应于第二写使能信号将本地数据输出到本地数据线; 以及写入驱动器控制单元,用于在不执行写入操作时产生第一写入使能信号和第二写入使能信号以使第一写入使能信号失活。
    • 27. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07532527B2
    • 2009-05-12
    • US11528519
    • 2006-09-28
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C7/00
    • G11C7/1045G11C7/1048G11C7/1066
    • A semiconductor memory device includes a bank including a plurality of cell blocks; a first group of local input/output lines to transfer data stored on a first group of the cell blocks; a second group of local input/output lines to transfer data stored on a second group of the cell blocks; a first precharge unit precharging the first group of the local input/output lines; a second precharge unit precharging the second group of the local input/output lines; a precharge signal generator to precharge the first and second groups of the cell blocks and the second group of the cell blocks.
    • 一种半导体存储器件包括:一个包括多个单元块的单元; 用于传送存储在第一组单元块上的数据的第一组本地输入/输出线; 第二组本地输入/输出线,用于传送存储在第二组单元块上的数据; 第一预充电单元对所述第一组本地输入/输出线预充电; 第二预充电单元对所述第二组本地输入/输出线进行预充电; 预充电信号发生器,用于对第一和第二组单元块和第二组单元块进行预充电。
    • 28. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07349290B2
    • 2008-03-25
    • US11323687
    • 2005-12-30
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C8/00
    • G11C7/1051G11C7/106G11C7/1066G11C7/22G11C7/222G11C2207/105
    • A semiconductor memory device is provided. The semiconductor memory device includes: a first input/output control unit for changing a sensing node into a first level in response to an activation of a first enabling signal for enabling an output of a data synchronized with a rising edge of a clock signal; a second input/output control unit for changing the sensing node into a second level in response to a delay locked clock signal as the second input/output control unit is enabled when the first enabling signal and a second enabling signal for enabling an output of a data synchronized with a falling edge of the clock signal are disabled; an output unit for outputting an input/output control signal; and a data output driver for outputting a data as the data output driver is activated in response to a first level of the input/output control signal.
    • 提供半导体存储器件。 半导体存储器件包括:第一输入/输出控制单元,用于响应于激活与第一时钟信号的上升沿同步的数据的第一使能信号的激活,将感测节点改变为第一电平; 第二输入/输出控制单元,用于响应于延迟锁定时钟信号而将感测节点改变为第二电平,因为当第一使能信号和第二使能信号用于使能输出信号时,第二输入/输出控制单元被使能 与时钟信号下降沿同步的数据被禁止; 用于输出输入/输出控制信号的输出单元; 并且响应于输入/输出控制信号的第一电平激活用于输出作为数据输出驱动器的数据的数据输出驱动器。
    • 30. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20070070670A1
    • 2007-03-29
    • US11528519
    • 2006-09-28
    • Sung-Joo HaHo-Youb Cho
    • Sung-Joo HaHo-Youb Cho
    • G11C5/02
    • G11C7/1045G11C7/1048G11C7/1066
    • A semiconductor memory device includes a bank including a plurality of cell blocks; a first group of local input/output lines to transfer data stored on a first group of the cell blocks according to a first data output mode; a second group of local input/output lines to transfer data stored on a second group of the cell blocks according to the first data output mode and a second data output mode; a first precharge unit precharging the first group of the local input/output lines; a second precharge unit precharging the second group of the local input/output lines; a precharge signal generator to precharge the first and second groups of the cell blocks for the first data output mode and the second group of the cell blocks for the second data output mode.
    • 一种半导体存储器件包括:一个包括多个单元块的单元; 第一组本地输入/输出线,用于根据第一数据输出模式传送存储在第一组单元块上的数据; 第二组本地输入/输出线,用于根据第一数据输出模式和第二数据输出模式传送存储在第二组单元块上的数据; 第一预充电单元对所述第一组本地输入/输出线预充电; 第二预充电单元对所述第二组本地输入/输出线进行预充电; 预充电信号发生器,用于对第一数据输出模式的第一和第二组单元块进行预充电,以及用于第二数据输出模式的第二组单元块。