专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08304175B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08304175B2
公开(公告)日：2012-11-06
申请号：US12411169
申请日：2009-03-25
申请人： Hong-Ji Lee
发明人： Hong-Ji Lee
IPC分类号： G03F7/26
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139 , H01L21/76811 , H01L21/76813
摘要： A patterning method is provided. First, a material layer is formed on a substrate. Thereafter, an ashable layer is formed on the material layer. Afterwards, a patterned transfer layer is formed on the ashable layer, wherein the patterned transfer layer has a critical dimension less than the exposure limit dimension. Further, the ashable layer is patterned using the patterned transfer layer or a complementary layer of the patterned transfer layer as a mask, so as to form a patterned ashable layer. The material layer is then patterned using the patterned ashable layer as a mask.
摘要翻译：提供了图案化方法。首先，在基板上形成材料层。此后，在该材料层上形成可酸化层。之后，在可灰化层上形成图案转印层，其中图案转印层的临界尺寸小于曝光极限尺寸。此外，使用图案化的转印层或图案化转印层的互补层作为掩模来对可灰化层进行图案化，以形成图案化的可酸化层。然后使用图案化的可湿性层作为掩模将材料层图案化。

22. 发明申请

US20120181701A1 Multilayer Connection Structure and Making Method 有权
标题翻译：多层连接结构与制作方法
公开(公告)号：US20120181701A1
公开(公告)日：2012-07-19
申请号：US13114931
申请日：2011-05-24
申请人： Shih-Hung Chen , Hang-Ting Lue , Hong-Ji Lee , Chin-Cheng Yang
发明人： Shih-Hung Chen , Hang-Ting Lue , Hong-Ji Lee , Chin-Cheng Yang
IPC分类号： H01L21/283 , H01L23/48
CPC分类号： H01L23/50 , H01L21/76805 , H01L21/76816 , H01L21/76831 , H01L21/76838 , H01L23/481 , H01L23/522 , H01L23/5226 , H01L24/19 , H01L27/0207 , H01L27/0688 , H01L27/11206 , H01L27/11286 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L2924/1306 , H01L2924/14 , H01L2924/00
摘要： A method provides electrical connections to a stack of contact levels of an interconnect region for a 3-D stacked IC device. Each contact level comprises conductive and insulation layers. A portion of any upper layer is removed to expose a first contact level and create contact openings for each contact level. A set of N masks is used to etch the contact openings up to and including 2N contact levels. Each mask is used to etch effectively half of the contact openings. When N is 3, a first mask etches one contact level, a second mask etches two contact levels, and a third mask etches four contact levels. A dielectric layer may be formed on the sidewalls of the contact openings. Electrical conductors may be formed through the contact openings with the dielectric layers electrically insulating the electrical conductors from the sidewalls.
摘要翻译：一种方法提供了用于3-D堆叠IC器件的互连区域的接触电平堆叠的电连接。每个接触层包括导电层和绝缘层。去除任何上层的一部分以露出第一接触层并为每个接触层产生接触开口。使用一组N个掩模来蚀刻直到并包括2N个接触电平的接触开口。每个掩模用于有效地蚀刻半个接触开口。当N为3时，第一掩模蚀刻一个接触电平，第二掩模蚀刻两个接触电平，并且第三掩模蚀刻四个接触电平。电介质层可以形成在接触开口的侧壁上。电导体可以通过接触开口形成，其中电介质层将电导体与侧壁电绝缘。

23. 发明申请

US20100248160A1 PATTERNING METHOD 有权
标题翻译：绘图方法
公开(公告)号：US20100248160A1
公开(公告)日：2010-09-30
申请号：US12411169
申请日：2009-03-25
申请人： Hong-Ji Lee
发明人： Hong-Ji Lee
IPC分类号： G03F7/20
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139 , H01L21/76811 , H01L21/76813
摘要： A patterning method is provided. First, a material layer is formed on a substrate. Thereafter, an ashable layer is formed on the material layer. Afterwards, a patterned transfer layer is formed on the ashable layer, wherein the patterned transfer layer has a critical dimension less than the exposure limit dimension. Further, the ashable layer is patterned using the patterned transfer layer or a complementary layer of the patterned transfer layer as a mask, so as to form a patterned ashable layer. The material layer is then patterned using the patterned ashable layer as a mask.
摘要翻译：提供了图案化方法。首先，在基板上形成材料层。此后，在该材料层上形成可酸化层。之后，在可灰化层上形成图案转印层，其中图案转印层的临界尺寸小于曝光极限尺寸。此外，使用图案化的转印层或图案化转印层的互补层作为掩模来对可灰化层进行图案化，以形成图案化的可酸化层。然后使用图案化的可湿性层作为掩模将材料层图案化。

24. 发明授权

US07550390B2 Method and apparatus for dielectric etching during integrated circuit fabrication 有权
标题翻译：在集成电路制造期间的电介质蚀刻的方法和装置
公开(公告)号：US07550390B2
公开(公告)日：2009-06-23
申请号：US11326031
申请日：2006-01-04
申请人： Hong-Ji Lee , Chun-Hung Lee , Nan-Tsu Lian
发明人： Hong-Ji Lee , Chun-Hung Lee , Nan-Tsu Lian
IPC分类号： H01L21/461
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L22/26
摘要： A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transition between etching steps. Charge elimination occurs because the negative species is relatively higher at the beginning of plasma spiking and can reach the wafer surface to reduce the accumulated charge.
摘要翻译：一种用于多步电介质蚀刻的方法包括在每个蚀刻步骤之间的放电步骤，以便有助于释放由前一蚀刻步骤产生的晶片上的累积电荷。放电步骤在蚀刻步骤之间的每个转变中稳定等离子体放电。发生电荷消除是因为负极物质在等离子体尖峰开始时相对较高，并且可以到达晶片表面以减少累积电荷。

25. 发明申请

US20090026547A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090026547A1
公开(公告)日：2009-01-29
申请号：US12219415
申请日：2008-07-22
申请人： Hong-Ji Lee , Sung-Jin Kim
发明人： Hong-Ji Lee , Sung-Jin Kim
IPC分类号： H01L21/8234 , H01L27/088
CPC分类号： H01L21/823425 , H01L21/823437
摘要： A semiconductor device includes an active region extending along a first direction on a semiconductor substrate, the active region having a first sidewall and a second sidewall spaced apart and facing each other, a distance between the first and second sidewalls extending along a second direction, and a gate on the active region, the gate having a pair of body portions extending along the second direction and being spaced apart from each other, the second direction being perpendicular to the first direction, a head portion extending along the first direction to connect the body portions, the head portion overlapping a portion of the first sidewall, and a plurality of tab portions protruding from sidewalls of the body portions, the tab portions extending along the first direction and overlapping a portion of the second sidewall.
摘要翻译：半导体器件包括沿着半导体衬底上的第一方向延伸的有源区，所述有源区具有间隔开并面对彼此的第一侧壁和第二侧壁，所述第一和第二侧壁之间的距离沿着第二方向延伸，以及在所述有源区域上的栅极，所述栅极具有沿着所述第二方向延伸并且彼此间隔开的一对主体部分，所述第二方向垂直于所述第一方向，头部部分沿着所述第一方向延伸以连接所述主体所述头部与所述第一侧壁的一部分重叠，以及从所述主体部分的侧壁突出的多个突片部分，所述突出部分沿着所述第一方向延伸并与所述第二侧壁的一部分重叠。

26. 发明授权

US07427519B2 Method of detecting end point of plasma etching process 有权
公开(公告)号：US07427519B2
公开(公告)日：2008-09-23
申请号：US11670590
申请日：2007-02-02
申请人： Hong-Ji Lee
发明人： Hong-Ji Lee
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L22/26 , B41J11/002 , G01J3/443 , G01N21/73
摘要： A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t)] of a number “m” (m≧1) of spectral line(s) of the first etching product in emission spectrum of the plasma and that [Ii=1 to n(t)] of a number “n” (n≧1) of spectral line(s) of the second etching product in the emission spectrum are collected, wherein “m+n≧3” is satisfied. One index of Lm ⁡ ( t ) ⁡ [ = ∏ i = 1 , j = 1 n , m ⁢ ⁢ I i ⁡ ( t ) I j ⁡ ( t ) ] , Ls ⁡ ( t ) ⁡ [ = ∑ i = 1 , j = 1 n , m ⁢ ⁢ I i ⁡ ( t ) I j ⁡ ( t ) ] , Lm′(t) {=d[Lm(t)]/dt} and Ls′(t) {=d[Ls(t)]/dt} is calculated in real time and plotted with the time. An etching end-point is identified from the plot of the one index with the time.

27. 发明申请

US20080186473A1 METHOD OF DETECTING END POINT OF PLASMA ETCHING PROCESS 有权
公开(公告)号：US20080186473A1
公开(公告)日：2008-08-07
申请号：US11670590
申请日：2007-02-02
申请人： Hong-Ji Lee
发明人： Hong-Ji Lee
IPC分类号： G01N21/00
CPC分类号： H01L22/26 , B41J11/002 , G01J3/443 , G01N21/73
摘要： A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t)] of a number “m” (m≧1) of spectral line(s) of the first etching product in emission spectrum of the plasma and that [Ii=1 to n(t)] of a number “n” (n≧1) of spectral line(s) of the second etching product in the emission spectrum are collected, wherein “m+n≧3” is satisfied. One index of Lm  ( t ) [ = ∏ i = 1 , j = 1 n , m  I i  ( t ) I j  ( t ) ] ,  Ls  ( t ) [ = ∏ i = 1 , j = 1 n , m  I i  ( t ) I j  ( t ) ] ,  Lm ′  ( t )  { =  [ Lm  ( t ) ] /  t }   and   Ls ′  ( t )  { =  [ Ls  ( t ) ] /  t } is calculated in real time and plotted with the time. An etching end-point is identified from the plot of the one index with the time.

28. 发明申请

US20070167002A1 Method and apparatus for dielectric etching during integrated circuit fabrication 有权
标题翻译：在集成电路制造期间的电介质蚀刻的方法和装置
公开(公告)号：US20070167002A1
公开(公告)日：2007-07-19
申请号：US11326031
申请日：2006-01-04
申请人： Hong-Ji Lee , Chun-Hung Lee , Nan-Tsu Lian
发明人： Hong-Ji Lee , Chun-Hung Lee , Nan-Tsu Lian
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L22/26
摘要： A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transition between etching steps. Charge elimination occurs because the negative species is relatively higher at the beginning of plasma spiking and can reach the wafer surface to reduce the accumulated charge.
摘要翻译：一种用于多步电介质蚀刻的方法包括在每个蚀刻步骤之间的放电步骤，以便有助于释放由前一蚀刻步骤产生的晶片上的累积电荷。放电步骤在蚀刻步骤之间的每个转变中稳定等离子体放电。发生电荷消除是因为负极物质在等离子体尖峰开始时相对较高，并且可以到达晶片表面以减少累积电荷。

29. 发明授权

US06589706B1 Preparation of cyanine dye for high density optical recording disk 有权
标题翻译：用于高密度光记录盘的花青染料的制备
公开(公告)号：US06589706B1
公开(公告)日：2003-07-08
申请号：US09721270
申请日：2000-11-22
申请人： Wen-Yih Liao , Andrew Teh Hu , Chien-Liang Huang , Huei-Wen Yang , Der-Ray Huang , Ding-Yih Hu , Ming-Chia Lee , Hong-Ji Lee
发明人： Wen-Yih Liao , Andrew Teh Hu , Chien-Liang Huang , Huei-Wen Yang , Der-Ray Huang , Ding-Yih Hu , Ming-Chia Lee , Hong-Ji Lee
IPC分类号： G11B724
CPC分类号： G11B7/2472 , G11B7/2534 , G11B7/259
摘要： A cyanine dye (I) for using in high density optical disc recording medium, having the following structure: in which R1 represents R2 represents and alkyl with C1-C18 or X− represents an acid anion. This cyanine dye is suitable for use as a &lgr;=500 nm−650 nm visible light-absorbing organic dye useful as a high density optical disc recording medium.
摘要翻译：用于高密度光盘记录介质中的花青染料（I）具有以下结构：其中R1表示R2表示，C1-C18或X-表示烷基表示酸性阴离子。该花青染料适合用作可用作高密度光盘记录介质的Lambd = 500nm-650nm可见光吸收有机染料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式