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21. 发明授权

US08829560B2 Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US08829560B2
公开(公告)日：2014-09-09
申请号：US13515261
申请日：2010-12-08
申请人： Franz Eberhard , Wolfgang Schmid
发明人： Franz Eberhard , Wolfgang Schmid
IPC分类号： H01L33/36 , H01L33/38 , H01L33/40
CPC分类号： H01L33/36 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip, comprising: a radiation out-coupling side (102, 910); a contact connection (104, 1000); a metal contact material (210, 912) applied to the radiation out-coupling side (102, 910) and a metal conductive connection (106, 500, 914) applied to the contact material (210, 912) and which is connected to the contact connection (104, 1000).
摘要翻译：一种光电子半导体芯片，包括：辐射输出耦合侧（102,910）; 接触连接（104,1000）; 施加到辐射出耦合侧（102,910）的金属接触材料（210,912）和施加到接触材料（210,912）的金属导电连接（106,500,914），并且连接到接触连接（104,1000）。

22. 发明授权

US08723199B2 Radiation emitting body and method for producing a radiation-emitting body 有权
标题翻译：辐射发射体和用于产生辐射发射体的方法
公开(公告)号：US08723199B2
公开(公告)日：2014-05-13
申请号：US12811030
申请日：2008-12-19
申请人： Franz Eberhard , Reiner Windisch , Robert Walter , Michael Schmal , Magnus Ahlstedt
发明人： Franz Eberhard , Reiner Windisch , Robert Walter , Michael Schmal , Magnus Ahlstedt
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting body comprising a layer sequence, having an active layer (10) for generating electromagnetic radiation, having a reflection layer (50), which reflects the generated radiation, and having at least one intermediate layer (40) arranged between the active layer (10) and the reflection layer (50). In this case, the active layer (10) has a roughening on an interface (15) directed toward the reflection layer (50), and the reflection layer (50) is substantially planar at an interface (45) directed toward the active layer (10). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer (10) for generating electromagnetic radiation. In this case, the method comprises roughening an interface (15) on the active layer (10), and forming at least one intermediate layer (40) and a reflection layer (50).
摘要翻译：一种辐射发射体，包括具有产生电磁辐射的有源层（10）的层序列，具有反射层（50），其反射所产生的辐射，并且具有至少一个中间层（40）层（10）和反射层（50）。在这种情况下，有源层（10）在指向反射层（50）的界面（15）上具有粗糙化，并且反射层（50）在指向有源层的界面（45）处基本上是平面的（ 10）。还公开了一种用于制造辐射发射体的方法，其涉及在具有用于产生电磁辐射的有源层（10）的衬底上形成层序列。在这种情况下，该方法包括粗糙化有源层（10）上的界面（15），并形成至少一个中间层（40）和反射层（50）。

23. 发明授权

US08354682B2 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US08354682B2
公开(公告)日：2013-01-15
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

24. 发明申请

US20120248494A1 Optoelectronic Semiconductor Chip and Method for Fabricating an Optoelectronic Semiconductor Chip 有权
标题翻译：光电半导体芯片及制造光电半导体芯片的方法
公开(公告)号：US20120248494A1
公开(公告)日：2012-10-04
申请号：US13515261
申请日：2010-12-08
申请人： Franz Eberhard , Wolfgang Schmid
发明人： Franz Eberhard , Wolfgang Schmid
IPC分类号： H01L33/62
CPC分类号： H01L33/36 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip, comprising: a radiation out-coupling side (102, 910); a contact connection (104, 1000); a metal contact material (210, 912) applied to the radiation out-coupling side (102, 910) and a metal conductive connection (106, 500, 914) applied to the contact material (210, 912) and which is connected to the contact connection (104, 1000).
摘要翻译：一种光电子半导体芯片，包括：辐射输出耦合侧（102,910）; 接触连接（104,1000）; 施加到辐射出耦合侧（102,910）的金属接触材料（210,912）和施加到接触材料（210,912）的金属导电连接（106,500,914），并且连接到接触连接（104,1000）。

25. 发明授权

US07742677B2 Method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US07742677B2
公开(公告)日：2010-06-22
申请号：US11810326
申请日：2007-06-04
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： G02B6/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.
摘要翻译：公开了一种用于制造光电子部件的方法。该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小，并去除掩模层。

26. 发明授权

US07696078B2 Method for producing an electrical contact for an optoelectronic semiconductor chip 有权
标题翻译：光电子半导体芯片的电接点的制造方法
公开(公告)号：US07696078B2
公开(公告)日：2010-04-13
申请号：US11654224
申请日：2007-01-16
申请人： Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
发明人： Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
IPC分类号： H01L21/44
CPC分类号： H01L33/40 , H01L33/32
摘要： A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.
摘要翻译：一种用于制造光电半导体芯片（1）的电接触的方法，包括在半导体芯片上提供由金属或金属合金构成的镜层（2）; 在所述镜层上提供保护层（3）; 在所述保护层上提供阻挡层和耦合层（5）的层序列; 以及在所述层序列上提供焊料层（8）。

27. 发明申请

US20090257466A1 Optoelectronic Semiconductor Component and Method for the Production of an Optoelectronic Semiconductor Device 审中-公开
标题翻译：光电子半导体元件及其制造方法
公开(公告)号：US20090257466A1
公开(公告)日：2009-10-15
申请号：US12420456
申请日：2009-04-08
申请人： Franz Eberhard , Berthold Hahn , Stephan Kaiser , Bernd Mayer
发明人： Franz Eberhard , Berthold Hahn , Stephan Kaiser , Bernd Mayer
IPC分类号： H01S5/028 , H01L21/00
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0281 , H01S5/0282 , H01S5/162 , H01S5/183 , H01S5/405
摘要： In at least one embodiment, the optoelectronic semiconductor component includes an optically active area that is formed with a crystalline semiconductor material that contains at least one of the substances gallium or aluminum. Furthermore, the semiconductor component contains at least one facet on the optically active area. Furthermore, the semiconductor component contains at least one boundary layer, containing sulfur or selenium, with a thickness of up to five monolayers, wherein the boundary layer is located on the facet. Such a semiconductor component has a high destruction threshold relative to the optical powers that occur during operation of the semiconductor component.
摘要翻译：在至少一个实施例中，光电子半导体部件包括由含有至少一种物质镓或铝的晶体半导体材料形成的光学有源区域。此外，半导体部件在光学活性区域上包含至少一个小面。此外，半导体组件包含至少一个含有硫或硒的边界层，其厚度最多为五个单层，其中边界层位于小平面上。这种半导体部件相对于在半导体部件的工作期间发生的光功率具有高的破坏阈值。

28. 发明申请

US20080035944A1 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US20080035944A1
公开(公告)日：2008-02-14
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

29. 发明授权

US07227191B2 Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
标题翻译：具有多个电流膨胀层的光电子部件及其制造方法
公开(公告)号：US07227191B2
公开(公告)日：2007-06-05
申请号：US11120514
申请日：2005-05-02
申请人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
发明人： Franz Eberhard , Uwe Strauss , Ulrich Zehnder , Andreas Weimar , Raimund Oberschmid
IPC分类号： H01L27/15 , H01L27/148 , H01L27/14 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).
摘要翻译：一种具有半导体芯片的光电子部件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。提供连接触点（9），用于将电流施加到活动区域中。第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

30. 发明授权

US07164158B2 Electrical contact for optoelectronic semiconductor chip and method for its production 有权
标题翻译：光电子半导体芯片的电接触及其制作方法
公开(公告)号：US07164158B2
公开(公告)日：2007-01-16
申请号：US10789199
申请日：2004-02-26
申请人： Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
发明人： Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.
摘要翻译：一种用于光电器件的电接触件，其包括金属或金属合金的镜层（2），用于减少镜层（2）的腐蚀的保护层（3），阻挡层（4），耦合层（5）和焊料层（8）。这种类型的接触的特征在于高反射率，与半导体的良好的欧姆接触，对半导体的良好的粘合性以及形成彼此接触的层的良好粘附性，良好的热稳定性，相对于环境影响的高稳定性，以及可焊性和图案性。

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