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    • 22. 发明申请
    • MOTORCYCLE
    • 摩托车
    • US20090090576A1
    • 2009-04-09
    • US12244347
    • 2008-10-02
    • Kazuya NishizawaSatoshi TerumichiHiroshi Shimomura
    • Kazuya NishizawaSatoshi TerumichiHiroshi Shimomura
    • B62K11/00B60K13/02
    • F02M35/162B62K11/04F02M35/02F02M35/024F02M35/04F02M35/10039
    • A motorcycle includes a body frame having right and left frame members 15R and 15L and an air cleaner 10 having an air cleaner case 3 and an air filter element 6. The air cleaner case 3 includes a lower section 3a, a part of which being positioned between the frame members 15R and 15L and an upper section 3b protruding upward from the lower section 3a above the frame members 15R and 15L and laterally extending outward. The upper section 3b is positioned above the frame members 15R and 15L and laterally outward of inner ends 15a of the right and left frame members 15R and 15L. The upper section 3b has a seal section 26. The air filter element 6 is supported and sealed by the seal section 26 so as to divide the inner space of the air cleaner case 3 into an upper space and a lower space.
    • 摩托车包括具有左框架构件15R和左框架构件15L的主体框架和具有空气滤清器壳体3和空气过滤元件6的空气滤清器10.空气滤清器壳体3包括下部3a,其一部分位于 在框架构件15R和15L之间并且从框架构件15R和15L上方的下部3a向上突出并向外侧向延伸的上部3b。 上部3b位于框架构件15R和15L的上方,并且左右框架构件15R和15L的内端15a的横向外侧。 上部3b具有密封部26.空气过滤元件6被密封部26支撑并密封,以将空气滤清器壳体3的内部空间分割成上部空间和下部空间。
    • 26. 发明授权
    • Method of fabricating a semiconductor device
    • 制造半导体器件的方法
    • US5202277A
    • 1993-04-13
    • US918933
    • 1992-07-22
    • Shuichi KameyamaAtsushi HoriHiroshi ShimomuraMizuki Segawa
    • Shuichi KameyamaAtsushi HoriHiroshi ShimomuraMizuki Segawa
    • H01L21/28H01L21/336
    • H01L29/6659H01L21/28114
    • A method of fabricating a semiconductor device having gate-drain overlap MOSFETs in which side surfaces of upper portions of gate lines are anisotropically etched using a buffer film as an etch stop is disclosed. An insulating film as a gate insulator is formed on a semiconductor layer of a first conductivity type. A first conductive film is formed on the gate insulator. A buffer film having openings in gate line regions is formed on the first conductive film. A second conductive film is formed on the buffer film. The second conductive film is patterned into wiring shape to form upper portions of gate lines covering the openings of the buffer film. Ions of a second conductivity type are implanted into the semiconductor layer using the upper portions of the gate lines as an implant mask to form sources and drains in the semiconductor layer. Sidewall spacers are formed on the sides of the upper portions of the gate lines. The buffer film and the first conductive film are etched using the upper portions of the gate lines and the sidewall spacers as an etching mask to form under portions of the gate lines.
    • 公开了一种制造具有栅极 - 漏极重叠MOSFET的半导体器件的方法,其中栅极线的上部的侧表面使用缓冲膜作为蚀刻停止点进行各向异性蚀刻。 作为栅极绝缘体的绝缘膜形成在第一导电类型的半导体层上。 在栅极绝缘体上形成第一导电膜。 在第一导电膜上形成在栅线区域具有开口的缓冲膜。 在缓冲膜上形成第二导电膜。 将第二导电膜图案化成布线形状,以形成覆盖缓冲膜的开口的栅极线的上部。 使用栅极线的上部作为注入掩模将第二导电类型的离子注入到半导体层中,以在半导体层中形成源极和漏极。 侧壁间隔件形成在栅极线的上部的侧面上。 使用栅极线和侧壁间隔物的上部作为蚀刻掩模蚀刻缓冲膜和第一导电膜,以在栅极线的一部分形成。
    • 28. 发明授权
    • Insert cutter
    • 插入刀具
    • US4511293A
    • 1985-04-16
    • US454100
    • 1982-12-28
    • Hiroshi ShimomuraTatsuo Arai
    • Hiroshi ShimomuraTatsuo Arai
    • B23C5/06B23C5/20B23C5/22B26D1/12
    • B23C5/2269B23C5/207B23C2200/0416Y10T407/1922
    • A cutter for processing a surface of a metal workpiece includes a body of a generally circular cross-section. The body has a plurality of generally radially outwardly-opening recesses formed in a circumferential surface of the body in circumferentially spaced relation to each other. Each of the recesses includes a first bearing surface sloping radially outwardly in a direction away from a forward end face of the body and extending to the circumferential surface. The recess also includes a second bearing surface sloping radially outwardly toward the forward end face. The second bearing surface is disposed forwardly of the first bearing surface and disposed at a predetermined angle relative to the first bearing surface. A plurality of cutter inserts of a quadrilateral shape are received in the plurality of recesses, respectively. Two adjacent side faces of the insert are held in contact with the first and second bearing surfaces, respectively. The insert has an end cutting edge at the corner thereof at which the side face held against the second bearing surface and the side face facing away from the first bearing surface intersect each other. The insert also has a peripheral cutting edge formed on the side face facing away from the first bearing surface. A plurality of clamp members are received in the recesses, respectively, and releasably hold the inserts in position.
    • 用于处理金属工件的表面的切割器包括大致圆形横截面的主体。 主体具有形成在主体的圆周表面中的多个大致径向向外开口的凹部,其彼此周向间隔开。 每个凹部包括沿远离主体的前端面的方向径向向外倾斜并延伸到圆周表面的第一支承表面。 该凹部还包括朝向前端面径向向外倾斜的第二支承面。 第二支承表面设置在第一支承表面的前方并相对于第一支承表面以预定的角度布置。 分别在多个凹部中容纳多个四边形形状的切削刀片。 插入件的两个相邻的侧面分别与第一和第二支承表面保持接触。 插入件在其拐角处具有端部切割边缘,侧面保持在第二支承表面上,并且背离背面的侧面彼此相交。 插入件还具有形成在背离第一支承表面的侧面上的周边切削刃。 多个夹紧构件分别容纳在凹部中,并且可释放地将插入件保持在适当位置。