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21. 发明授权

US08921829B2 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，混合型检测装置，光学传感器装置和用于制造光接收元件阵列的方法
公开(公告)号：US08921829B2
公开(公告)日：2014-12-30
申请号：US13520007
申请日：2011-03-10
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L29/06 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14652 , H01L27/14694
摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
摘要翻译：本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离，在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

22. 发明授权

US08642943B2 Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer 有权
标题翻译：半导体晶片，受光元件，受光元件阵列，混合型检测装置，光学传感器装置以及半导体晶片的制造方法
公开(公告)号：US08642943B2
公开(公告)日：2014-02-04
申请号：US13640922
申请日：2010-12-03
申请人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L31/101 , H01L31/18 , H01L33/06
CPC分类号： H01L31/03046 , B82Y20/00 , H01L27/1446 , H01L27/1467 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
摘要翻译：光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

23. 发明授权

US07745895B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07745895B2
公开(公告)日：2010-06-29
申请号：US11567931
申请日：2006-12-07
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L31/0232 , H01L31/14
CPC分类号： H01S5/0683 , H01S5/02284 , H01S5/02292
摘要： The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.
摘要翻译：本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜的半导体衬底。半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被半导体光电二极管，用于控制半导体激光元件的输出。

24. 发明授权

US07608825B2 Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus 有权
标题翻译：图像拾取装置，视觉增强装置，夜视装置，导航支援装置和监视装置
公开(公告)号：US07608825B2
公开(公告)日：2009-10-27
申请号：US11954617
申请日：2007-12-12
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： G01J5/20
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14634 , H01L27/14636 , H01L31/03042 , H01L31/145
摘要： There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.
摘要翻译：提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

25. 发明申请

US20080142714A1 Image Pickup Device, Vision Enhancement Device, Night-Vision Device, Navigation Supporting Device, And Monitoring Device 有权
标题翻译：图像拾取装置，视觉增强装置，夜视装置，导航支援装置及监视装置
公开(公告)号：US20080142714A1
公开(公告)日：2008-06-19
申请号：US11954617
申请日：2007-12-12
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L25/00 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14634 , H01L27/14636 , H01L31/03042 , H01L31/145
摘要： There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.
摘要翻译：提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光来拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

26. 发明申请

US20070194401A1 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US20070194401A1
公开(公告)日：2007-08-23
申请号：US11709393
申请日：2007-02-21
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L31/00
CPC分类号： H01L31/02165 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L31/022416 , H01L31/03046
摘要： A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.
摘要翻译：具有抑制光串扰的机构的光电检测器包括设置在公共半导体衬底上的多个光电二极管，每个光电二极管包括在公共半导体衬底上外延生长并设有外延侧电极的吸收层。每个光电二极管设置有至少一个环形或月牙形的外延侧电极，仅将引导到相应的光电二极管的入射光聚光的入射侧限制的聚光部分，以及放置在与吸收层的光入射侧相对的一侧，允许从光入射侧进入的光容易地从光电二极管发射出。

27. 发明申请

US20070138490A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070138490A1
公开(公告)日：2007-06-21
申请号：US11567931
申请日：2006-12-07
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L33/00
CPC分类号： H01S5/0683 , H01S5/02284 , H01S5/02292
摘要： The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.
摘要翻译：本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜的半导体衬底。半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被半导体光电二极管，用于控制半导体激光元件的输出。

28. 发明授权

US06218684B1 Photodiode with buffer layer 有权
标题翻译：带缓冲层的光电二极管
公开(公告)号：US06218684B1
公开(公告)日：2001-04-17
申请号：US09206156
申请日：1998-12-07
申请人： Yoshiki Kuhara , Yasuhiro Iguchi , Tadashi Saito , Hitoshi Terauchi
发明人： Yoshiki Kuhara , Yasuhiro Iguchi , Tadashi Saito , Hitoshi Terauchi
IPC分类号： H01L31072
CPC分类号： H01L31/109
摘要： A half-transmittance photodiode usable as a photodetector in receivers for “ping-pong transmission” is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.
摘要翻译：可用作“乒乓球传送”接收机中的光电检测器的半透射光电二极管的温度特性得到改善，使得可以在低温下使用半透射光电二极管。 p-n结形成在缓冲层中，而不是在吸收层中。

29. 发明申请

US20140319464A1 LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：光接收元件及其制造方法
公开(公告)号：US20140319464A1
公开(公告)日：2014-10-30
申请号：US14365515
申请日：2012-06-11
申请人： Yasuhiro Iguchi
发明人： Yasuhiro Iguchi
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/109 , H01L31/0352
CPC分类号： H01L31/02161 , B82Y20/00 , H01L27/14647 , H01L31/022408 , H01L31/02363 , H01L31/035236 , H01L31/105 , H01L31/109 , H01L31/18 , H01L2224/16225 , Y02E10/50
摘要： A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode.
摘要翻译：光接收元件包括用于接收光的光接收层，光接收层设置在半导体衬底上，设置在光接收层上的接触层和与触点欧姆接触的像素电极层。半导体基板的背面作为光入射面起作用，并且在接触层和像素电极之间的预定区域插入用于防止接触层和像素电极之间的化学反应的防反射膜。

30. 发明授权

US08258061B2 Manufacturing method of electronic element 有权
标题翻译：电子元件的制造方法
公开(公告)号：US08258061B2
公开(公告)日：2012-09-04
申请号：US12010517
申请日：2008-01-25
申请人： Yasuhiro Iguchi , Nobuyuki Mitsui
发明人： Yasuhiro Iguchi , Nobuyuki Mitsui
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L31/184 , H01L33/0062 , Y02E10/544 , Y02P70/521
摘要： A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.
摘要翻译：去除外延晶片的圆周部分以除去形成在周向倒角中的异常生长的升高部分。外周部分的外延层以宽度q = t至5t去除，其中t为外延层的厚度，从而露出基板的表面。因此，可以防止加工步骤中的外延层的破裂。

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