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21. 发明授权

US08921829B2 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，混合型检测装置，光学传感器装置和用于制造光接收元件阵列的方法
公开(公告)号：US08921829B2
公开(公告)日：2014-12-30
申请号：US13520007
申请日：2011-03-10
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L29/06 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14652 , H01L27/14694
摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
摘要翻译：本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离，在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

22. 发明授权

US08642943B2 Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer 有权
标题翻译：半导体晶片，受光元件，受光元件阵列，混合型检测装置，光学传感器装置以及半导体晶片的制造方法
公开(公告)号：US08642943B2
公开(公告)日：2014-02-04
申请号：US13640922
申请日：2010-12-03
申请人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Hiroki Mori , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Kouhei Miura , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L31/101 , H01L31/18 , H01L33/06
CPC分类号： H01L31/03046 , B82Y20/00 , H01L27/1446 , H01L27/1467 , H01L31/035236 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
摘要翻译：光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

23. 发明授权

US07745895B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07745895B2
公开(公告)日：2010-06-29
申请号：US11567931
申请日：2006-12-07
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L31/0232 , H01L31/14
CPC分类号： H01S5/0683 , H01S5/02284 , H01S5/02292
摘要： The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.
摘要翻译：本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜的半导体衬底。半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被半导体光电二极管，用于控制半导体激光元件的输出。

24. 发明授权

US07608825B2 Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus 有权
标题翻译：图像拾取装置，视觉增强装置，夜视装置，导航支援装置和监视装置
公开(公告)号：US07608825B2
公开(公告)日：2009-10-27
申请号：US11954617
申请日：2007-12-12
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： G01J5/20
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14634 , H01L27/14636 , H01L31/03042 , H01L31/145
摘要： There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.
摘要翻译：提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

25. 发明申请

US20080142714A1 Image Pickup Device, Vision Enhancement Device, Night-Vision Device, Navigation Supporting Device, And Monitoring Device 有权
标题翻译：图像拾取装置，视觉增强装置，夜视装置，导航支援装置及监视装置
公开(公告)号：US20080142714A1
公开(公告)日：2008-06-19
申请号：US11954617
申请日：2007-12-12
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L25/00 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14634 , H01L27/14636 , H01L31/03042 , H01L31/145
摘要： There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.
摘要翻译：提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光来拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

26. 发明申请

US20070194401A1 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US20070194401A1
公开(公告)日：2007-08-23
申请号：US11709393
申请日：2007-02-21
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L31/00
CPC分类号： H01L31/02165 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L31/022416 , H01L31/03046
摘要： A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.
摘要翻译：具有抑制光串扰的机构的光电检测器包括设置在公共半导体衬底上的多个光电二极管，每个光电二极管包括在公共半导体衬底上外延生长并设有外延侧电极的吸收层。每个光电二极管设置有至少一个环形或月牙形的外延侧电极，仅将引导到相应的光电二极管的入射光聚光的入射侧限制的聚光部分，以及放置在与吸收层的光入射侧相对的一侧，允许从光入射侧进入的光容易地从光电二极管发射出。

27. 发明申请

US20070138490A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070138490A1
公开(公告)日：2007-06-21
申请号：US11567931
申请日：2006-12-07
申请人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
发明人： Youichi Nagai , Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： H01L33/00
CPC分类号： H01S5/0683 , H01S5/02284 , H01S5/02292
摘要： The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.
摘要翻译：本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜的半导体衬底。半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被半导体光电二极管，用于控制半导体激光元件的输出。

28. 发明申请

US20120140161A1 POLYMER FILM, RETARDATION FILM, POLARIZING PLATE, LIQUID CRYSTAL DISPLAY DEVICE AND ULTRAVIOLET ABSORBER 审中-公开
标题翻译：聚合物膜，延展膜，极化板，液晶显示装置和超紫外线吸收剂
公开(公告)号：US20120140161A1
公开(公告)日：2012-06-07
申请号：US13305348
申请日：2011-11-28
申请人： Shigeaki NIMURA , Ryo Nakamura , Shunya Katoh , Masayoshi Toyoda , Hiroko Kamee , Masuji Motoki , Masaki Noro , Hiroshi Inada
发明人： Shigeaki NIMURA , Ryo Nakamura , Shunya Katoh , Masayoshi Toyoda , Hiroko Kamee , Masuji Motoki , Masaki Noro , Hiroshi Inada
IPC分类号： F21V9/06 , G02B5/30 , G02B1/08
CPC分类号： G02B5/3083 , G02B5/208 , G02B5/22 , G02B5/3025
摘要： A polymer film, containing a merocyanine compound having λmax of not longer than 375 nm, and a compound represented by formula (II), which is different from said at least one merocyanine compound, is disclosed. In the formula, R1 and R2 each independently represent a hydrogen atom, alkyl group, aryl group, heterocyclic group, cyano, N-alkyl- or N-aryl carbamoyl group, aryloxy carbonyl group or —CH2COOR5, or R1 and R2 bind to each other to form a ring containing a nitrogen atom; R5 represents an alkyl group, aryl group or a heterocyclic group; R3 and R4 each independently represent a substituent having a Hammett substituent constant σp of equal to or more than 0.2, or R3 and R4 bind to each other to form a cyclic active methylene compound structure.
摘要翻译：公开了含有不超过375nm的λmax的部花青化合物和与所述至少一种部花青化合物不同的式（II）表示的化合物的聚合物膜。在该式中，R 1和R 2各自独立地表示氢原子，烷基，芳基，杂环基，氰基，N-烷基 - 或N-芳基氨基甲酰基，芳氧基羰基或-CH 2 COOR 5，或者R 1和R 2各自结合另外形成含有氮原子的环; R5表示烷基，芳基或杂环基; R3和R4各自独立地表示具有等于或大于0.2的哈米特取代基常数p的取代基，或者R 3和R 4彼此结合以形成环状活性亚甲基化合物结构。

29. 发明授权

US08174118B2 Detection device and method for manufacturing the same 有权
标题翻译：检测装置及其制造方法
公开(公告)号：US08174118B2
公开(公告)日：2012-05-08
申请号：US12651633
申请日：2010-01-04
申请人： Youichi Nagai , Hiroshi Inada
发明人： Youichi Nagai , Hiroshi Inada
IPC分类号： H01L23/48
CPC分类号： H01L27/14683 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/92 , H01L27/14634 , H01L27/14636 , H01L2224/02122 , H01L2224/0401 , H01L2224/06179 , H01L2224/11334 , H01L2224/1145 , H01L2224/1147 , H01L2224/1161 , H01L2224/11622 , H01L2224/1184 , H01L2224/131 , H01L2224/13109 , H01L2224/13139 , H01L2224/13144 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/14179 , H01L2224/14505 , H01L2224/14515 , H01L2224/16148 , H01L2224/27334 , H01L2224/2745 , H01L2224/2747 , H01L2224/2761 , H01L2224/27622 , H01L2224/29011 , H01L2224/29013 , H01L2224/291 , H01L2224/2929 , H01L2224/81007 , H01L2224/81141 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2224/819 , H01L2224/83203 , H01L2224/839 , H01L2224/92 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/12036 , H01L2924/12043 , H01L2224/81 , H01L2224/83 , H01L2924/00
摘要： A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.
摘要翻译：一种检测装置的制造方法，包括以下步骤：在受光元件阵列和读出电路多路复用器中的至少一个上设置接合凸块，固定凸起高度调节构件，用于将凸块的高度调节到发光元件阵列，接收元件阵列和/或其上设置有凸块的读出电路多路复用器，并且在凸块的顶部上按压平板并使凸块变形，直到平板与凸块高度调节构件的端部接触。

30. 发明授权

US07938814B2 Disposable diaper 有权
标题翻译：一次性尿布
公开(公告)号：US07938814B2
公开(公告)日：2011-05-10
申请号：US12145404
申请日：2008-06-24
申请人： Takao Koyama , Hidekazu Ito , Hiroshi Inada , Takahiro Arimura
发明人： Takao Koyama , Hidekazu Ito , Hiroshi Inada , Takahiro Arimura
IPC分类号： A61F13/15
CPC分类号： A61F13/505 , A61F13/15203 , A61F13/532 , A61F2013/53054
摘要： A disposable diaper comprising a liquid permeable topsheet 2, a liquid impermeable backsheet 3, and a liquid retentive absorbent member 4 and having a substantially oblong shape, the absorbent member 4 in the crotch portion having a middle absorbent portion 42 which occupies the middle 3/7 of the width of the absorbent member 4 and side absorbent portions 43 which each occupy the outermost 1/7 of the width of the absorbent member 4, wherein each side absorbent portion 43 has a larger unit absorption capacity than the middle absorbent portion 42, hydrophobic sheets 3 and 21 are disposed on the lateral outer edge of each side absorbent portion 43 to cover from the upper to lower surfaces of the edge, and an elastic member 71 is disposed in the part having each side absorbent portion 43 in the longitudinal direction of the side absorbent portion 43.
摘要翻译：一种一次性尿布，其包括液体可透过的顶片2，不透液性底片3和液体保持性吸收体4，并且具有大致长方形的形状，裆部中的吸收体4具有中间吸收部42，吸收体4的宽度的7个和吸收体4的宽度的最外侧的1/7的侧吸收部43，其中每个侧吸收部43具有比中间吸收部42更大的单位吸收能力，疏水性片材3和21设置在每个侧面吸收部分43的侧向外边缘上，以从边缘的上部到下部表面覆盖，并且弹性部件71设置在具有纵向方向上的每个侧面吸收部分43的部分中侧吸收部43。

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