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21. 发明授权

US08450783B2 Semiconductor device 有权
公开(公告)号：US08450783B2
公开(公告)日：2013-05-28
申请号：US12978805
申请日：2010-12-27
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： H01L27/085
CPC分类号： H01L29/7869 , G11C16/0425 , H01L27/105 , H01L27/108 , H01L27/10802 , H01L27/10805 , H01L27/11 , H01L27/115 , H01L27/11517 , H01L27/11551 , H01L27/1156 , H01L27/11563 , H01L27/11568 , H01L27/1225 , H01L28/40 , H01L29/78693 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

22. 发明授权

US08422272B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08422272B2
公开(公告)日：2013-04-16
申请号：US13195105
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： H01L27/1052 , G11C11/404 , G11C11/405 , G11C11/4091 , G11C16/0408 , G11C16/08 , G11C16/24 , H01L21/02565 , H01L21/02631 , H01L21/425 , H01L21/441 , H01L21/477 , H01L27/108 , H01L27/11521 , H01L27/11526 , H01L27/1156 , H01L27/1207 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/66969 , H01L29/78651 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供了包括非易失性存储单元的半导体器件，其中包括包括氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。通过接通写入晶体管并将电位施加到写入晶体管的源极（或电极），电容器的一个电极和读取晶体管的栅电极的节点处，将数据写入存储单元电连接，然后关闭写入晶体管，使得预定量的电荷被保持在节点中。此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

23. 发明授权

US08320162B2 Semiconductor device and driving method of the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08320162B2
公开(公告)日：2012-11-27
申请号：US13022407
申请日：2011-02-07
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C11/24 , G11C11/403 , G11C11/405 , H01L27/1052 , H01L27/11521 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.
摘要翻译：目的在于提供具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且写入的次数不受限制。半导体器件使用宽间隙半导体形成，并且包括电位改变电路，其选择性地将与位线的电位等于或不同的电位施加到源极线。因此，可以充分降低半导体器件的功耗。

24. 发明申请

US20120012845A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120012845A1
公开(公告)日：2012-01-19
申请号：US13182488
申请日：2011-07-14
申请人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： H01L27/108
CPC分类号： H01L27/11517 , G11C16/0433 , G11C16/26 , H01L27/1156 , H01L29/78
摘要： A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably.
摘要翻译：提供具有新颖结构的半导体器件，其即使在没有供电的情况下也可以保存存储的数据，并且对写入操作的数量没有限制。使用能够显着降低晶体管的截止电流的材料形成半导体器件; 例如，作为宽间隙半导体的氧化物半导体材料。通过使用能够显着降低晶体管的截止电流的半导体材料，半导体器件可以长期保存数据。在具有存储单元阵列的半导体器件中，在串联连接的第一至第m存储器单元的节点中产生的寄生电容基本相等，由此半导体器件可以稳定地工作。

25. 发明申请

US20110156028A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110156028A1
公开(公告)日：2011-06-30
申请号：US12978805
申请日：2010-12-27
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： H01L27/108
CPC分类号： H01L29/7869 , G11C16/0425 , H01L27/105 , H01L27/108 , H01L27/10802 , H01L27/10805 , H01L27/11 , H01L27/115 , H01L27/11517 , H01L27/11551 , H01L27/1156 , H01L27/11563 , H01L27/11568 , H01L27/1225 , H01L28/40 , H01L29/78693 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
摘要翻译：半导体器件包括源极线，位线，信号线，字线，在源极线和位线之间并联连接的存储器单元，通过开关电连接到源极线和位线的第一驱动器电路元件，通过开关元件电连接到源极线的第二驱动器电路，电连接到信号线的第三驱动电路，以及电连接到字线的第四驱动电路。存储单元包括第一晶体管，包括第一栅电极，第一源电极和第一漏电极，第二晶体管包括第二栅电极，第二源电极和第二漏极，以及电容器。第二晶体管包括氧化物半导体材料。

26. 发明授权

US09697878B2 Word line divider and storage device 有权
公开(公告)号：US09697878B2
公开(公告)日：2017-07-04
申请号：US13472789
申请日：2012-05-16
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： G11C5/06 , G11C8/14 , G11C11/408 , G11C8/08
CPC分类号： G11C8/14 , G11C8/08 , G11C11/408 , G11C11/4087 , G11C2216/14
摘要： A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.

27. 发明授权

US09384809B2 Word line divider and storage device 有权
公开(公告)号：US09384809B2
公开(公告)日：2016-07-05
申请号：US13472789
申请日：2012-05-16
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： G11C5/06 , G11C8/14 , G11C11/408
摘要： A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.

28. 发明授权

US08482974B2 Semiconductor memory device and method for driving the same 有权
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US08482974B2
公开(公告)日：2013-07-09
申请号：US13022292
申请日：2011-02-07
申请人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/14
CPC分类号： G11C11/405 , H01L27/11521 , H01L27/1156 , H01L27/1225 , H01L28/40
摘要： A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line.
摘要翻译：半导体器件包括第一信号线，第二信号线，存储单元和电位转换器电路。存储单元包括：第一晶体管，包括第一栅极电极，第一源电极，第一漏极电极和第一沟道形成区域; 第二晶体管，包括第二栅极电极，第二源极电极，第二漏极电极和第二沟道形成区域; 和电容器。第一沟道形成区域和第二沟道形成区域包括不同的半导体材料。第二漏电极，电容器的一个电极和第一栅电极彼此电连接。第二栅极通过第二信号线电连接到电位转换器电路。

29. 发明授权

US08767442B2 Semiconductor device including memory cell array 有权
标题翻译：包括存储单元阵列的半导体器件
公开(公告)号：US08767442B2
公开(公告)日：2014-07-01
申请号：US13230093
申请日：2011-09-12
申请人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： H01L27/1052 , G11C8/08 , G11C11/403 , G11C11/405 , G11C11/4085 , G11C16/02 , G11C16/0433 , G11C16/0483 , G11C16/08 , G11C2211/4016
摘要： A semiconductor device in which stored data can be held even when power is not supplied and there is no limitation on the number of writing operations is provided. A semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, such as an oxide semiconductor material that is a wide-gap semiconductor. When a semiconductor material which can sufficiently reduce the off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, by providing a capacitor or a noise removal circuit electrically connected to a write word line, a signal such as a short pulse or a noise input to a memory cell can be reduced or removed. Accordingly, a malfunction in which data written into the memory cell is erased when a transistor in the memory cell is instantaneously turned on can be prevented.
摘要翻译：即使在不提供电力的情况下也可以保存存储的数据，并且没有限制写入操作的数量的半导体装置。使用可以充分降低诸如作为宽间隙半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。当使用可以充分降低晶体管的截止电流的半导体材料时，半导体器件可以长期保存数据。此外，通过提供电连接到写字线的电容器或噪声去除电路，可以减少或去除诸如短脉冲或输入到存储器单元的噪声的信号。因此，可以防止当存储单元中的晶体管瞬间导通时擦除写入存储单元的数据的故障。

30. 发明授权

US08406038B2 Semiconductor device 有权
公开(公告)号：US08406038B2
公开(公告)日：2013-03-26
申请号：US13094863
申请日：2011-04-27
申请人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： H01L29/78 , G11C11/403 , G11C11/406 , G11C16/0416 , G11C2211/4065 , H01L27/11521 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.

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