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21. 发明授权

US06912068B1 Image processor, image processing method, and program product storing proguram for controlling the image processor method 有权
标题翻译：图像处理器，图像处理方法以及用于控制图像处理器方法的程序产品存储进程
公开(公告)号：US06912068B1
公开(公告)日：2005-06-28
申请号：US09532304
申请日：2000-03-22
申请人： Yoshihiko Hirota , Keisuke Hashimoto
发明人： Yoshihiko Hirota , Keisuke Hashimoto
IPC分类号： H04N1/409 , G06T5/00 , H04N1/40 , H04N1/405
CPC分类号： H04N1/40087 , H04N1/4053
摘要： An image processor performs multilevel error diffusion processing and is provided with: a quantizing unit that quantizes pixel data constituting image information based on output values distributed at predetermined tone differences; an error detecting unit that detects a quantization error of the pixel data; a peripheral error calculating unit that integrates the quantization error of the pixel data detected by the error detecting unit with respect to a quantization error of peripheral pixel data; and an error superimposing unit that adds the integration error calculated by the peripheral error calculating unit to the pixel data input next. The image processor is further provided with: a random noise generating unit that generates random noise in accordance with the tone level of the input pixel data; and a noise superimposing unit that superimposes the random noise generated by the random noise generating unit on the pixel data.
摘要翻译：图像处理器执行多级误差扩散处理，并具有：量化单元，其基于以预定色差分布的输出值量化构成图像信息的像素数据; 检测像素数据的量化误差的误差检测单元; 周边误差计算单元，其对由误差检测单元检测的像素数据的量化误差相对于周边像素数据的量化误差进行积分; 以及误差叠加单元，其将由所述周边误差计算单元计算出的积分误差与接下来输入的像素数据相加。图像处理器还具有：随机噪声产生单元，其根据输入像素数据的色调电平产生随机噪声; 以及噪声叠加单元，其将由随机噪声生成单元生成的随机噪声叠加在像素数据上。

22. 发明授权

US06716522B2 Molded article from thermoplastic composite material and method for producing the same 失效
标题翻译：热塑性复合材料的成型品及其制造方法
公开(公告)号：US06716522B2
公开(公告)日：2004-04-06
申请号：US10069065
申请日：2002-04-04
申请人： Koji Matsumoto , Masaki Ito , Koushi Kawabata , Keisuke Hashimoto , Mitsuo Okubo
发明人： Koji Matsumoto , Masaki Ito , Koushi Kawabata , Keisuke Hashimoto , Mitsuo Okubo
IPC分类号： B32B516
CPC分类号： B29C47/28 , B27N3/28 , B29C47/0016 , B29C47/003 , B29C47/025 , B29C47/128 , B29C47/822 , B29C47/86 , B29C47/862 , B29C47/864 , B29C70/58 , B29C2793/009 , B29K2711/00 , B29K2711/14 , Y10T428/253 , Y10T428/26 , Y10T428/31913 , Y10T428/31938 , Y10T428/31978 , Y10T428/31982 , Y10T428/31989
摘要： The present invention has for its object to provide a molded article of a thermoplastic composite material which is not only durable with little discoloration or fading even on prolonged outdoor exposure and is very satisfactory in physical properties and appearance qualities inclusive of wood-like texture but also has high productivity and good economics. The present invention is a method of producing a molded article of a thermoplastic composite material comprising extruding the thermoplastic composite material containing a thermoplastic resin and a vegetable filler, said vegetable filler content being 50 to 90 weight % of the total weight of said thermoplastic resin and said vegetable filler, wherein extrusion is carried out by means of an extrusion apparatus comprising at least an extruder, a hot shaping die, and a cooling die, said hot shaping die and cooling die being directly coupled.
摘要翻译：本发明的目的是提供一种热塑性复合材料的模制品，即使在长时间暴露于室外也不会变色或褪色，并且在物理性能和外观质量方面非常满意，包括木质纹理本发明是一种热塑性复合材料的成型体的制造方法，其特征在于，包括挤出含有热塑性树脂和植物填料的热塑性复合材料，所述植物填料含量为所述热塑性复合材料的50〜90重量％所述热塑性树脂和所述植物填料的总重量，其中通过至少包括挤出机，热成形模和冷却模的挤出装置进行挤出，所述热成型模和冷却模直接耦合。

23. 发明授权

US06334909B1 Cold-accumulating material and cold-accumulating refrigerator using the same 有权
标题翻译：蓄冷材料和使用其的冷堆冰箱
公开(公告)号：US06334909B1
公开(公告)日：2002-01-01
申请号：US09331157
申请日：1999-06-17
申请人： Masami Okamura , Tomohisa Arai , Keisuke Hashimoto
发明人： Masami Okamura , Tomohisa Arai , Keisuke Hashimoto
IPC分类号： H01F1053
CPC分类号： F25B9/14 , C09K5/14 , F25B2309/003 , H01F1/0009 , H01F1/015
摘要： A cold accumulating material comprising magnetic substance expressed by the general formula: RCu1−xM1+x (1) wherein R denotes at least one of rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Er, Ho, Tm and Yb, M denotes at least one element selected from the group consisting of Ag, Au, Al, Ga, In, Ge, Sn, Sb, Si, Bi, Ni, Pd, Pt, Zn, Co, Rh, Ir, Mn, Fe, Ru, Cr, Mo, W, V, Nb, Ta, Ti, Zr and Hf, and wherein Ni and Ge are not simultaneously selected, and x in atomic ratio satisfies a relation: −0.95≧x≧0.90. According to the above structure, there can be provided a cold accumulating material and a refrigerator using the cold accumulating material capable of exhibiting a remarkable and stable refrigerating performance at an extremely low temperature for a long time.
摘要翻译：一种由以下通式表示的磁性物质的蓄冷材料：其中R表示选自Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy中的至少一种稀土元素，Er，Ho，Tm和Yb，M表示选自Ag，Au，Al，Ga，In，Ge，Sn，Sb，Si，Bi，Ni，Pd，Pt，Zn，Co中的至少一种元素，Rh，Ir，Mn，Fe，Ru，Cr，Mo，W，V，Nb，Ta，Ti，Zr和Hf，并且其中不同时选择Ni和Ge，原子比为x满足关系：-0.95 > = x> = 0.90。根据上述结构，可以提供一种使用能够在极低温度下长期显现出显着且稳定的制冷性能的蓄冷材料的蓄冷材料和冷藏库。

24. 发明授权

US6003320A Cold accumulating material for extremely low temperature cold, refrigerator using the same and heat shielding member 有权
标题翻译：用于极低温冷藏的蓄冷材料，使用其的制冷器和隔热构件
公开(公告)号：US6003320A
公开(公告)日：1999-12-21
申请号：US91838
申请日：1998-08-21
申请人： Masami Okamura , Tomohisa Arai , Keisuke Hashimoto , Rohana Chandrtilleke , Hideki Nakagome
发明人： Masami Okamura , Tomohisa Arai , Keisuke Hashimoto , Rohana Chandrtilleke , Hideki Nakagome
IPC分类号： C09K5/00 , F25B9/14 , F28D20/00 , F25B9/00
CPC分类号： C09K5/00 , F25B9/14 , F28D20/0056 , F25B2309/003 , F28D2020/0013 , Y02E60/142
摘要： A cold accumulating material for extremely low temperature cold 1 is formed by filling pores 3 of a porous carrier 2 with magnetic particles 4 containing a rare earth element. The porous carrier 2 is desired to be formed of a sheet-shaped porous metal. A refrigerator according to this invention contains a cold reserving unit 5 filled with the aforementioned cold accumulating material for extremely low temperature cold 1. The above described structure is capable of exerting a sufficient refrigerating capacity with a small pressure loss of refrigerant (operating medium) and providing a cold accumulating material for extremely low temperature cold easy to process to a shape reducing the pressure loss and a refrigerator using the same.
摘要翻译： PCT No.PCT / JP97 / 03956 Sec。 371日期1998年8月21日 102（e）1998年8月21日PCT PCT 1997年10月30日PCT公布。公开号WO98 / 18880 日期1998年7月5日通过用包含稀土元素的磁性颗粒4填充多孔载体2的孔3，形成用于极低温冷却1的蓄冷材料。多孔载体2希望由片状多孔金属形成。根据本发明的冰箱包含一个装有上述用于极低温冷却的蓄冷材料1的冷藏单元5.上述结构能够在制冷剂（操作介质）的压力损失小的情况下发挥足够的制冷能力，提供用于极低温冷却的蓄冷材料，易于加工成减小压力损失的形状和使用其的冰箱。

25. 发明授权

US5968289A Permanent magnetic material and bond magnet 失效
标题翻译：永磁材料和粘结磁铁
公开(公告)号：US5968289A
公开(公告)日：1999-10-19
申请号：US984019
申请日：1997-12-03
申请人： Shinya Sakurada , Tomohisa Arai , Keisuke Hashimoto , Takahiro Hirai
发明人： Shinya Sakurada , Tomohisa Arai , Keisuke Hashimoto , Takahiro Hirai
IPC分类号： C22C19/07 , C22C38/00 , H01F1/053 , H01F1/057 , H01F1/058 , H01F1/059 , H01F1/08 , H01F1/04
CPC分类号： H01F1/058 , H01F1/057 , H01F1/0571 , H01F1/0578 , H01F1/059
摘要： A permanent magnetic material of the present invention has a TbCu.sub.7 phase as the principal phase and high magnetic characteristics with an extremely small variation among the values. This permanent magnetic material is expressed in a general formula:R1.sub.X R2.sub.y A.sub.z O.sub.u B.sub.v M.sub.100-x-y-z-u-vwherein R1 is at least one element selected from the rare earth elements including Y, R2 is at least one element selected from Zr, Hf and Sc, A is at least one element selected from hydrogen, nitrogen, carbon and phosphorus, M is at least one element selected from Fe and Co, x, y, z, u and v are atomic percent individually defined as 2.ltoreq.x, 0.01.ltoreq.y, 4.ltoreq.x+y.ltoreq.20, 0.001.ltoreq.z.ltoreq.10, 0.01.ltoreq.u.ltoreq.2, 0
摘要翻译：本发明的永久磁性材料具有TbCu7相作为主相和高磁特性，其值之间的变化极小。该永磁材料以通式表示：R1XR2yAzOuBvM100-xyzu-v其中R1是选自包括Y的稀土元素中的至少一种元素，R 2是选自Zr，Hf和Sc中的至少一种元素，A是至少一种元素选自氢，氮，碳和磷，M是选自Fe和Co中的至少一种元素，x，y，z，u和v分别定义为2≤x≤0.01， 4 ，主相具有TbCu7晶体结构。

26. 发明授权

US10509320B2 Underlying coating forming composition for lithography containing compound having protected carboxyl group 有权
公开(公告)号：US10509320B2
公开(公告)日：2019-12-17
申请号：US11795520
申请日：2006-01-06
申请人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
发明人： Satoshi Takei , Tetsuya Shinjo , Keisuke Hashimoto , Yasushi Sakaida
IPC分类号： G03F7/09 , G03F7/26 , G03F7/30
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio.The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

27. 发明授权

US08822138B2 Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring 有权
标题翻译：用于形成光刻用抗蚀剂下层膜的组合物，包括含有脂环族环和芳环的树脂
公开(公告)号：US08822138B2
公开(公告)日：2014-09-02
申请号：US13389682
申请日：2010-08-11
申请人： Tetsuya Shinjo , Hirokazu Nishimaki , Yasushi Sakaida , Keisuke Hashimoto
发明人： Tetsuya Shinjo , Hirokazu Nishimaki , Yasushi Sakaida , Keisuke Hashimoto
IPC分类号： G03F7/11 , H01L21/027 , C08G65/332 , G03F7/09 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/094
摘要： There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
摘要翻译：提供了具有耐热性和蚀刻选择性的抗蚀剂下层膜。一种用于形成用于光刻的抗蚀剂下层膜的组合物，其包含脂环式环氧聚合物（A）与稠环芳族羧酸和单环芳族羧酸（B）的反应产物（C）。脂环族环氧聚合物（A）可以包括式（1）的重复结构单元：（T是在聚合物主链中含有脂环族的重复单元结构，E是环氧基或含有环氧基的有机基）。缩环芳族羧酸和单环芳香族羧酸（B）可以包括B1:B2 = 3:7〜7的摩尔比的缩环芳族羧酸（B1）和单环芳香族羧酸（B2）：3。缩环芳族羧酸（B1）可以是9-蒽代羧酸，单环芳香羧酸（B2）可以是苯甲酸。

28. 发明授权

US08722841B2 Carbazole novolak resin 有权
标题翻译：咔唑酚醛清漆树脂
公开(公告)号：US08722841B2
公开(公告)日：2014-05-13
申请号：US13377055
申请日：2010-06-16
申请人： Daigo Saito , Hiroaki Okuyama , Hideki Musashi , Tetsuya Shinjo , Keisuke Hashimoto
发明人： Daigo Saito , Hiroaki Okuyama , Hideki Musashi , Tetsuya Shinjo , Keisuke Hashimoto
IPC分类号： C08G59/40
CPC分类号： H01L21/3081 , C08G12/26 , C08G16/02 , C08G61/12 , C08G73/0273 , C08G73/0672 , C08G2261/344 , C08L61/26 , C08L79/02 , C08L79/04 , G03F7/091 , G03F7/094 , H01L21/0271
摘要： There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.
摘要翻译：提供了用于制造半导体器件中的光刻工艺的具有耐热性的抗蚀剂下层膜和用于电子器件的具有透明度的高折射率膜。包含式（1）的单元结构的聚合物：其中R 1，R 2，R 3和R 5各自可以是氢原子，R 4可以是苯基或萘基。包含聚合物的抗蚀剂下层膜形成组合物和由该组合物形成的抗蚀剂下层膜。包含聚合物的高折射率成膜组合物和由该组合物形成的高折射率膜。

29. 发明授权

US08163460B2 Underlayer coating forming composition for lithography containing polysilane compound 有权
标题翻译：用于含聚硅烷化合物的光刻用底层涂料组合物
公开(公告)号：US08163460B2
公开(公告)日：2012-04-24
申请号：US11920840
申请日：2006-05-12
申请人： Satoshi Takei , Keisuke Hashimoto , Makoto Nakajima
发明人： Satoshi Takei , Keisuke Hashimoto , Makoto Nakajima
IPC分类号： G03F7/004 , G03F7/075 , G03F7/26
CPC分类号： G03F7/0752 , C09D183/16 , G03F7/11 , Y10S430/128
摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.
摘要翻译：提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。

30. 发明申请

US20120077345A1 CARBAZOLE NOVOLAK RESIN 有权
标题翻译： CARBAZOLE NOVOLAK树脂
公开(公告)号：US20120077345A1
公开(公告)日：2012-03-29
申请号：US13377055
申请日：2010-06-16
申请人： Daigo Saito , Hiroaki Okuyama , Hideki Musashi , Tetsuya Shinjo , Keisuke Hashimoto
发明人： Daigo Saito , Hiroaki Okuyama , Hideki Musashi , Tetsuya Shinjo , Keisuke Hashimoto
IPC分类号： H01L21/306 , C08G75/06 , C08G6/00 , H01L21/31 , C08L81/02 , C08L79/04 , C08K5/103 , C08G73/06 , C08L61/00
CPC分类号： H01L21/3081 , C08G12/26 , C08G16/02 , C08G61/12 , C08G73/0273 , C08G73/0672 , C08G2261/344 , C08L61/26 , C08L79/02 , C08L79/04 , G03F7/091 , G03F7/094 , H01L21/0271
摘要： There is provided a resist underlayer film having heat resistance that is used for a lithography process in the production of semiconductor devices, and a high refractive index film having transparency that is used for an electronic device. A polymer comprising a unit structure of Formula (1): wherein each of R1, R2, R3, and R5 may be a hydrogen atom, R4 may be phenyl group or naphthyl group. A resist underlayer film forming composition comprising the polymer, and a resist underlayer film formed from the composition. A high refractive index film forming composition comprising the polymer, and a high refractive index film formed from the composition.
摘要翻译：提供了用于制造半导体器件中的光刻工艺的具有耐热性的抗蚀剂下层膜和用于电子器件的具有透明度的高折射率膜。包含式（1）的单元结构的聚合物：其中R 1，R 2，R 3和R 5各自可以是氢原子，R 4可以是苯基或萘基。包含聚合物的抗蚀剂下层膜形成组合物和由该组合物形成的抗蚀剂下层膜。包含聚合物的高折射率成膜组合物和由该组合物形成的高折射率膜。

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