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21. 发明申请

US20060246625A1 Method for fabricating a semiconductor device having a heat radiation layer 有权
标题翻译：制造具有散热层的半导体器件的方法
公开(公告)号：US20060246625A1
公开(公告)日：2006-11-02
申请号：US11471554
申请日：2006-06-21
申请人： Makoto Terui , Yasuo Tanaka , Takashi Noguchi
发明人： Makoto Terui , Yasuo Tanaka , Takashi Noguchi
IPC分类号： H01L21/00
CPC分类号： H01L21/568 , H01L21/561 , H01L21/6835 , H01L23/3114 , H01L23/3677 , H01L23/3733 , H01L24/27 , H01L24/81 , H01L29/0657 , H01L2224/04026 , H01L2224/274 , H01L2224/73253 , H01L2224/81801 , H01L2924/01029 , H01L2924/10158 , H01L2924/181 , H01L2924/19041 , H01L2924/00
摘要： A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.
摘要翻译：一种半导体器件的制造方法包括在半导体晶片的后表面上形成散热材料。半导体晶片具有布置在器件区域之间的多个器件区域和划线。在半导体晶片的后表面上形成散热材料之后，半导体晶片在划线处被分离。

22. 发明申请

US20060094212A1 Thin film transistor and method of manufacturing the same 有权
公开(公告)号：US20060094212A1
公开(公告)日：2006-05-04
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans Cho , Huaxiang Yin
IPC分类号： H01L21/20
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

23. 发明申请

US20050154919A1 Processing device 失效
标题翻译：处理装置
公开(公告)号：US20050154919A1
公开(公告)日：2005-07-14
申请号：US10998751
申请日：2004-11-30
申请人： Takashi Noguchi , Takayuki Noda , Hiromitsu Kato , Katsumi Kawano
发明人： Takashi Noguchi , Takayuki Noda , Hiromitsu Kato , Katsumi Kawano
IPC分类号： G06F12/14 , G06F21/60 , G06F21/62 , G06K17/00 , G06Q50/22 , G06Q50/24 , H04L9/00
CPC分类号： G06F21/35 , G06F21/32 , G06F21/6254
摘要： A processing device has a personal authentication information receiving unit for receiving personal authentication information, a security information DB, and a processing information managing unit. The processing information managing unit converts the personal authentication information received by the personal authentication receiving unit to a user ID, detects an event concerning a processing operation, and associates the event with the user ID, thereby creating or updating an access management table for processing performance information, for storage in the security information DB. The processing information management unit then controls access to the processing performance information based on the access management table and the user ID obtained by conversion of the personal authentication information received by the personal authentication information receiving unit.
摘要翻译：处理装置具有用于接收个人认证信息的个人认证信息接收单元，安全信息DB和处理信息管理单元。处理信息管理单元将由个人认证接收单元接收的个人认证信息转换为用户ID，检测与处理操作有关的事件，并将事件与用户ID相关联，从而创建或更新用于处理性能的访问管理表信息，用于存储在安全信息DB中。处理信息管理单元然后基于由个人认证信息接收单元接收的个人认证信息的转换而获得的访问管理表和用户ID来控制对处理性能信息的访问。

24. 发明申请

US20050139919A1 Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same 有权
标题翻译：形成多晶硅膜的方法，包括多晶硅膜的薄膜晶体管及其制造方法
公开(公告)号：US20050139919A1
公开(公告)日：2005-06-30
申请号：US10980838
申请日：2004-11-04
申请人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
发明人： Kyung-bae Park , Takashi Noguchi , Se-young Cho , Do-young Kim , Jang-yeon Kwon
IPC分类号： H01L21/20 , H01L21/00 , H01L21/336 , H01L27/01 , H01L29/786
CPC分类号： H01L29/66757 , H01L29/78603 , H01L29/78606
摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
摘要翻译：在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜，与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜膜和多晶硅膜上的栅极堆叠。第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

25. 发明申请

US20050139882A1 Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20050139882A1
公开(公告)日：2005-06-30
申请号：US11024469
申请日：2004-12-30
申请人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
发明人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
IPC分类号： H01L21/3205 , G11C11/22 , H01L21/82 , H01L21/8239 , H01L21/8246 , H01L21/84 , H01L27/10 , H01L27/105 , H01L27/115 , H01L27/12 , H01L29/786 , H01L31/119
CPC分类号： H01L27/11507 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.
摘要翻译：在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关元件。电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

26. 外观设计

USD500461S1 Truck 失效
标题翻译：卡车
公开(公告)号：USD500461S1
公开(公告)日：2005-01-04
申请号：US29177177
申请日：2003-03-06
申请人： Takashi Noguchi , Toshio Yamashita , Diane T. Allen
设计人： Takashi Noguchi , Toshio Yamashita , Diane T. Allen

27. 发明授权

US06821797B2 Semiconductor device and its manufacturing method 失效
公开(公告)号：US06821797B2
公开(公告)日：2004-11-23
申请号：US10672202
申请日：2003-09-26
申请人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
IPC分类号： H01L2100
CPC分类号： H01L31/204 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L31/03921 , H01L31/056 , H01L31/202 , Y02E10/52 , Y02P70/521
摘要： For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.

28. 发明授权

US06780671B2 Method of encapsulating conductive lines of semiconductor devices 失效
标题翻译：封装半导体器件导线的方法
公开(公告)号：US06780671B2
公开(公告)日：2004-08-24
申请号：US10659470
申请日：2003-09-11
申请人： Takashi Noguchi
发明人： Takashi Noguchi
IPC分类号： H01L2144
CPC分类号： H01L23/24 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05599 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first wall and a second wall. The first wall is arranged in a pad region which surrounds a chip region, and the second wall is arranged on a semiconductor chip mounted in the chip region. Conductive lines are arranged between the first wall and the second wall and are encapsulated by an encapsulating material formed between the first and second walls.
摘要翻译：半导体器件包括第一壁和第二壁。第一壁布置在围绕芯片区域的焊盘区域中，并且第二壁布置在安装在芯片区域中的半导体芯片上。导电线布置在第一壁和第二壁之间，并且由形成在第一和第二壁之间的封装材料封装。

29. 发明授权

US06682965B1 Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect 失效
标题翻译：在具有应变效应的同一硅层上形成n沟道场效应晶体管和p-沟道场效应晶体管的方法
公开(公告)号：US06682965B1
公开(公告)日：2004-01-27
申请号：US09048288
申请日：1998-03-26
申请人： Takashi Noguchi , Mitsuo Soneda
发明人： Takashi Noguchi , Mitsuo Soneda
IPC分类号： H01L218238
CPC分类号： H01L21/823814 , H01L21/823807
摘要： A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type field effect transistor, and a gate electrode of a n-channel type field effect transistor on the silicon layer which has the strain effect through a gate insulating film. The sources and drains of p- and n-type diffusion layers are then formed in the silicon layer having the strain effect, on both sides of the gate electrode.
摘要翻译：公开了一种在应变效应半导体层内形成场效应晶体管（FET）的方法，由此仅在应变效应硅层中形成FET的源极和漏极。 FET可以形成为p沟道型场效应晶体管的栅极电极和在硅层上的n沟道型场效应晶体管的栅极，其通过栅极绝缘膜具有应变效应。然后在具有应变效应的硅层中，在栅电极的两侧形成p型和n型扩散层的源极和漏极。

30. 发明授权

US06661027B1 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06661027B1
公开(公告)日：2003-12-09
申请号：US09718269
申请日：2000-11-22
申请人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
发明人： Akio Machida , Dharam Pal Gosain , Takashi Noguchi , Setsuo Usui
IPC分类号： H01L2715
CPC分类号： H01L31/204 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L31/03921 , H01L31/056 , H01L31/202 , Y02E10/52 , Y02P70/521
摘要： For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.
摘要翻译：为了制造半导体器件，例如薄膜太阳能电池，其包括由有机高分子材料制成的基体，氧化物电极膜和半导体薄膜，每个氧化物电极膜和半导体薄膜在氧化物电极膜上含有至少一种IV族元素，与氧化物电极膜接触的半导体薄膜之一通过溅射在例如不含氢气的气氛的非还原气氛中进行堆叠。因此，确保在氧化物电极膜和该半导体薄膜之间的界面处不大体上含有3nm以上的粒状产物。因此，非晶半导体薄膜等半导体薄膜可以在其表面具有ITO膜等氧化物电极膜的塑料基板上具有增强的粘附性。

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