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    • 29. 发明授权
    • Process for synthesizing diamond in a vapor phase
    • 在气相中合成金刚石的方法
    • US5380516A
    • 1995-01-10
    • US931494
    • 1992-08-21
    • Keiichiro TanabeTakahiro ImaiNaoji Fujimori
    • Keiichiro TanabeTakahiro ImaiNaoji Fujimori
    • C23C16/27C30B25/02C01B31/65
    • C23C16/27C23C16/277C30B25/02C30B29/04
    • The present invention relates to a method for synthesizing diamond by chemical vapor deposition (CVD) process, and specifically a chemical deposition process which allows production of diamond of high purity and high crystallizability having various uses at low cost and at high speed. In the first method for the present invention, a mixture of oxygen gas and a carbon-containing compound gas and optionally an inert gas is introduced into a reaction vessel and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a substrate placed in the vessel. In the second method of the present invention, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas and sulfur dioxide gas, or a mixture of the gas mixture with oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into a reaction vessel, and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
    • PCT No.PCT / JP89 / 00531 Sec。 371 1990年1月24日第 102(e)日期1990年1月24日PCT提交1989年5月25日PCT公布。 出版物WO89 / 11556 日本特开1989年1月30日。本发明涉及通过化学气相沉积(CVD)方法合成金刚石的方法,具体地说涉及一种化学沉积方法,该方法允许以低成本生产具有各种用途的高纯度和高结晶度的金刚石, 高速 在本发明的第一种方法中,将氧气和含碳化合物气体和任选的惰性气体的混合物引入反应容器中,并且通过使用电磁场产生等离子体,由此在衬底上产生金刚石 放在船上 在本发明的第二种方法中,含有氟气,氯气,氮氧化物气体和二氧化硫气体中的至少一种的混合物,或气体混合物与氧气和含碳化合物气体的混合物,或 将其与惰性气体的混合物引入反应容器中,并且通过使用电磁场产生等离子体,从而在放置在容器中的基材上产生金刚石。
    • 30. 发明授权
    • Method for producing the polycrystalline diamond tool
    • 多晶金刚石工具的制造方法
    • US5173089A
    • 1992-12-22
    • US854689
    • 1992-03-20
    • Keiichiro TanabeNaoji Fujimori
    • Keiichiro TanabeNaoji Fujimori
    • B23B27/14C23C16/01C23C16/27C23C30/00
    • C23C16/27B23B27/145C23C16/01C23C16/271C23C16/274C23C16/276C23C16/277C23C16/278C23C16/279C23C30/005B23B2226/315B23B2228/04
    • The invention relates to a chemical vapor phase deposition method for producing a polycrystalline diamond tool comprising the steps of supplying material gas including a carbon-containing gas and hydrogen gas into a vacuum chamber, exciting the material gas into a state including plasma or radicals, introducing the material gas to a heated substrate, first depositing of diamond on the substrate with the material gas having a first density of carbon, a first density of oxygen and a first density of nitrogen, second depositing of diamond on the first deposited diamond with the material gas having a density of carbon higher than the first density of carbon, a density of oxygen lower than the first density of oxygen or a density of nitrogen higher than the first density of nitrogen till the diamond becomes more than 40 .mu.m in thickness, etching the substrate away from the deposited diamond by an etchant to obtain a diamond plate, metalizing the surface of the diamond plate which was grown in the second depositing step, and fixing the metalized surface on an end surface of a tool body to thereby obtain a diamond tool with a rake surface which was grown in the first depositing step and with a fixation surface which was grown in the second depositing step.
    • 本发明涉及一种用于制造多晶金刚石工具的化学气相沉积方法,包括以下步骤:将包含含碳气体和氢气的材料气体供应到真空室中,将材料气体激发成包括等离子体或自由基的状态,引入 将材料气体输送到被加热的基底上,首先在所述基底上沉积金刚石,所述材料气体具有第一密度为碳,第一密度为氧和第一密度氮,第二沉积金刚石在第一沉积金刚石上的材料 具有比第一密度碳高的碳的密度的氧气,低于第一密度的氧气的密度或高于第一密度的氮的密度,直到金刚石的厚度大于40μm,蚀刻 衬底通过蚀刻剂离开沉积的金刚石以获得金刚石板,使生长的金刚石板的表面金属化 在第二沉积步骤中,并且将金属化表面固定在工具主体的端面上,从而获得具有在第一沉积步骤中生长的前刀面的金刚石工具和在第二沉积步骤中生长的固定表面 。