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21. 发明授权

US4586979A Method for manufacture of III-V group compound semiconductor single crystal 失效
标题翻译： III-V族化合物半导体单晶的制造方法
公开(公告)号：US4586979A
公开(公告)日：1986-05-06
申请号：US596705
申请日：1984-04-04
申请人： Tooru Katsumata , Kazutaka Terashima , Hiroaki Nakajima , Tsuguo Fukuda
发明人： Tooru Katsumata , Kazutaka Terashima , Hiroaki Nakajima , Tsuguo Fukuda
IPC分类号： C30B15/20 , C30B15/28 , C30B27/02
CPC分类号： C30B15/20 , C30B15/28
摘要： A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.
摘要翻译：通过以下方法制造III-V族化合物半导体单晶，该方法包括基于在晶种和用于晶体的原料的熔融层之间流动的电流信号来调节用于晶体的原料的熔融层的温度晶体的重量信号和晶体的长度信号，在晶体与熔融层的接触期间在晶体的肩部部分的形成期间以及在晶体的肩部部分期间晶体形成的桶体分别在晶体生长过程中。

22. 发明授权

US07875118B2 Crystallization method and crystallization apparatus 有权
标题翻译：结晶方法和结晶装置
公开(公告)号：US07875118B2
公开(公告)日：2011-01-25
申请号：US11876274
申请日：2007-10-22
申请人： Yasunao Oyama , Kazutaka Terashima
发明人： Yasunao Oyama , Kazutaka Terashima
IPC分类号： C30B25/12
CPC分类号： G03F7/70958 , C30B11/00 , C30B29/12 , G02B1/02 , Y10T117/10 , Y10T117/1008 , Y10T117/102
摘要： A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.
摘要翻译：结晶方法包括以下步骤：通过加热熔化坩埚中的结晶材料，并通过冷却和凝结熔融材料使晶体生长，其中所述熔融步骤包括将预定气体引入熔融材料中。

23. 发明授权

US06828169B2 Method of forming group-III nitride semiconductor layer on a light-emitting device 失效
标题翻译：在发光器件上形成III族氮化物半导体层的方法
公开(公告)号：US06828169B2
公开(公告)日：2004-12-07
申请号：US10463355
申请日：2003-06-17
申请人： Kazutaka Terashima , Mu-Jen Lai , Chiung-Yu Chang
发明人： Kazutaka Terashima , Mu-Jen Lai , Chiung-Yu Chang
IPC分类号： H01L2100
CPC分类号： H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/0079
摘要： A method of forming a group-III nitride semiconductor layer on a light-emitting device. First, a substrate is provided. Next, a buffer layer is formed on the substrate. A hydrogen treatment is performed on the buffer layer. Finally, a group-III nitride semiconductor layer is formed on the buffer layer. According to the present invention, a hydrogen treatment is performed on the buffer to prevent corrosion during subsequent process and remove particles from the buffer layer. Thus, the structure of the epitaxy layer following formed on the buffer layer is enhanced.
摘要翻译：一种在发光器件上形成III族氮化物半导体层的方法。首先，提供基板。接着，在基板上形成缓冲层。在缓冲层上进行氢处理。最后，在缓冲层上形成III族氮化物半导体层。根据本发明，对缓冲液进行氢处理以防止后续处理中的腐蚀并从缓冲层中除去颗粒。因此，缓冲层上形成的外延层的结构得以增强。

24. 发明授权

US5524574A Control of oxygen concentration in single crystal pulled up from melt containing Group-V element 失效
标题翻译：控制从含有V族元素的熔体中提取的单晶中的氧浓度
公开(公告)号：US5524574A
公开(公告)日：1996-06-11
申请号：US291833
申请日：1994-08-17
申请人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
发明人： Xingming Huang , Kouji Izunome , Kazutaka Terashima , Yutaka Shiraishi , Hitoshi Sasaki , Shigeyuki Kimura
IPC分类号： C30B15/00 , C30B15/02 , C30B15/04 , C30B15/20
CPC分类号： C30B29/06 , C30B15/02 , C30B15/04 , C30B15/206 , Y10S117/916
摘要： The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.
摘要翻译：包含在熔体6中的V族元素的量与熔体6的氧浓度具有密切的关系。该关系用于高水平地控制单晶8的氧浓度。 Group-V元件的含量由重力仪11测量的熔体6的重量计算，并与控制单元12中的预设值进行比较。当计算的内容小于预设值时，控制信号附加地供应熔体6的V族元素从控制单元12输出到进料器14.当计算出的含量大于预设值时，向熔体6供应原料的控制信号被输出到另一个进料器13。

25. 发明授权

US5410914A Measuring device for density of liquid or high-temperature melt without influence of surface tension 失效
标题翻译：用于液体或高温熔体密度的测量装置，而不影响表面张力
公开(公告)号：US5410914A
公开(公告)日：1995-05-02
申请号：US137764
申请日：1993-10-19
申请人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima
发明人： Hitoshi Sasaki , Eiji Tokizaki , Kazutaka Terashima
IPC分类号： G01N9/18 , G01N9/08 , G01N9/10
CPC分类号： G01N9/08
摘要： The measuring device has bobs 10, 17 suspended from a weight 12 with wires 11, 16. The hook 13 of the weight 12 is hung from a suspensor thread 15 extending downwards from a balance 14. The weight 12 may be omitted by using the upper bob 10 for dead weight. The bobs 10, 17 and the wires 11, 16 may be coated with a coating layer unreactive to the melt 19 whose density is to be measured. The weights of the measuring device is measured by the balance 14 under the first condition that the lower bob 17 is immersed in the liquid 19 and the second condition that the bobs 10, 17 are both immersed in the liquid 19. The density of the liquid 19 is calculated from the two measured values without the influence of the surface tension of the liquid 19 applied to the wires 11, 16.
摘要翻译：测量装置具有从具有电线11,16的重物12悬挂的凸块10,17.重物12的钩13悬挂在从平衡部14向下延伸的悬吊螺纹15上。通过使用上部鲍勃10为重量。杆10,17和电线11,16可以涂覆有与对其密度进行测量的熔体19不起反应的涂层。测量装置的重量是在第一个条件下由下摆锤17浸入液体19中的第一个条件和第二条件使第十条17都浸没在液体19中的第一个条件下由余量14测量。液体的密度 19由两个测量值计算，而不受施加到电线11,16的液体19的表面张力的影响。

26. 发明授权

US5162297A Liquid phase epitaxial growth of high temperature superconducting oxide wafer 失效
标题翻译：高温超导氧化物晶片的液相外延生长
公开(公告)号：US5162297A
公开(公告)日：1992-11-10
申请号：US205177
申请日：1988-06-10
申请人： Kazutaka Terashima , Katsuyoshi Fukuda
发明人： Kazutaka Terashima , Katsuyoshi Fukuda
IPC分类号： C30B19/02 , H01L39/24
CPC分类号： H01L39/2422 , C30B19/02 , C30B29/22 , C30B29/225 , Y10S505/729
摘要： This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.
摘要翻译：本发明提供一种制造超导氧化物晶片的方法，其中通过在晶体衬底上使用焊剂的液体外延工艺生长多系氧化物超导单晶薄膜。

27. 发明授权

US4496424A Method for manufacture of III-V compound semiconducting single crystal 失效
标题翻译：制备III-V化合物半导体单晶的方法
公开(公告)号：US4496424A
公开(公告)日：1985-01-29
申请号：US455734
申请日：1983-01-05
申请人： Kazutaka Terashima , Tsuguo Fukuda
发明人： Kazutaka Terashima , Tsuguo Fukuda
IPC分类号： C30B15/20 , C30B27/02
CPC分类号： C30B15/20 , C30B27/02
摘要： A III-V compound semiconducting single crystal is manufactured by a method using an encapsulant, which method comprises allowing the molten mass of a material for the crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling the crystal thereby causing the molten mass to generate bubbles and allowing the departing bubbles to entrain impurities from the molten mass, bringing a seed crystal into contact with the molten mass, applying a potential to the molten mass thereby determining the impurity concentration of the molten mass based on the results of the measurement and, after the impurity concentration of the molten mass determined as described above has reached a prescribed level, initiating the work of pulling the crystal from the molten mass.
摘要翻译：通过使用密封剂的方法制造III-V族化合物半导体单晶，该方法包括将在高压下预先熔化的晶体的熔融物质放置在低于要施加的压力的压力下拉动晶体从而引起熔融物质产生气泡并允许脱出的气泡夹带熔融物质的杂质，使晶种与熔融物质接触，向熔融物质施加电位，从而确定杂质浓度的熔融质量，并且在如上所述确定的熔融物质的杂质浓度达到规定水平之后，开始从熔融物质中拉出晶体的工作。

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