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    • 21. 发明申请
    • NIOBIUM ALLOY, SINTERED BODY THEREOF, AND CAPACITOR USING THE SAME
    • 铌合金,其烧结体以及使用其的电容器
    • US20100086434A1
    • 2010-04-08
    • US12630308
    • 2009-12-03
    • Kazuhiro OMORIKazumi Naito
    • Kazuhiro OMORIKazumi Naito
    • C22C27/02C22C29/16H01B1/02
    • H01G9/0525B22F2998/10C22C27/02C22C32/0068B22F1/0096B22F7/08B22F3/10B22F9/023B22F1/0003B22F9/04B22F9/24B22F1/0088
    • The present invention relates to a niobium alloy for capacitors comprising as an alloy component from 0.01 to 10 atom of at least one element selected from the group consisting of the elements belonging to Groups 2 to 16 of the periodic table and further comprising diniobium mononitride crystals of from 0.1 to 70 mass %, wherein a powder of the niobium alloy has an average particle size of 0.05 to 5 μm and a BET specific surface area of 0.5 to 40 m2/g, a granulated product of the niobium alloy having an average particle size of 10 to 500 μm, a sintered body of the powder of the niobium alloy or granulated product thereof, a capacitor and a producing method thereof using the sintered body. A niobium capacitor using the powder of the niobium alloy of the present invention or a granulated product thereof has high capacitance and small leakage current value and is excellent in high-temperature property and heat resistance property.
    • 本发明涉及一种电容器用铌合金,其包含0.01〜10原子的选自属于周期表第2〜16族的元素中的至少一种元素的合金成分,并且还包含铌单晶氮化铌晶体 0.1〜70质量%,其中,所述铌合金粉末的平均粒径为0.05〜5μm,BET比表面积为0.5〜40m 2 / g,所述铌合金的造粒物的平均粒径 10〜500μm的铌合金粉末的烧结体或其制粒体,电容器及其使用该烧结体的制造方法。 使用本发明的铌合金粉末或其造粒产物的铌电容器具有高电容和小的漏电流值,并且具有优异的耐高温性和耐热性。
    • 28. 发明授权
    • Gang socket and jig for manufacturing capacitor element that uses said gang socket
    • 用于制造电容器元件的插座和夹具,使用所述组合插座
    • US09196428B2
    • 2015-11-24
    • US13993371
    • 2011-10-13
    • Kazumi NaitoMasahiro Suzuki
    • Kazumi NaitoMasahiro Suzuki
    • H01G13/00H01G9/012H01G9/15H01G9/00
    • H01G13/00C25D9/02C25D11/005C25D11/04C25D11/26C25D17/005C25D17/08H01G9/0029H01G9/0032H01G9/0036H01G9/012H01G9/15H01G13/006Y10T29/417
    • Provided is a gang socket with which capacitor elements can be manufactured without contaminating chemical conversion treatment liquids or semiconductor layer forming liquids even when the chemical conversion treatment liquids and semiconductor layer forming liquids are corrosive and with which heat treatment can be carried out without obstacles even when heat treatment is carried out during the manufacture of the capacitor elements. This gang socket (1) is provided with a plurality of conductive socket main units (2) provided with insertion openings (37) and an insulator part (5) forming a plurality of receiving parts (6) that can accommodate at least part of the socket main units (2) and provided with a plurality of small openings (7) connecting to the bottom surface of the receiving parts (6) on a bottom surface (5b). The insulator part (5) is constituted of a material having heat resistance and corrosion resistance. At least part of the socket main units (2) are accommodated and secured in the receiving parts (6) of the insulator part (5), and the insertion openings (37) and the small openings (7) are connected.
    • 即使当化学转化处理液体和半导体层形成液体具有腐蚀性并且即使在没有障碍物的情况下也可以进行热处理时,即使在没有障碍物的情况下也可以在不污染化学转化处理液体或半导体层形成液体的情况下制造电容元件, 在电容器元件的制造期间进行热处理。 该组合插座(1)设置有多个具有插入开口(37)的导电插座主单元(2)和形成多个容纳部件(6)的绝缘体部件(5),该容纳部件可容纳至少部分 插座主单元(2),并且在底面(5b)上设置有多个与接收部(6)的底面连接的小开口(7)。 绝缘体部件(5)由具有耐热性和耐腐蚀性的材料构成。 插座主单元(2)的至少一部分被容纳并固定在绝缘体部分(5)的接收部分(6)中,并且插入开口(37)和小开口(7)连接。