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    • 24. 发明申请
    • MEDICAL-INFORMATION DISPLAY APPARATUS AND MEDICAL-INFORMATION DISPLAY METHOD
    • 医疗信息显示装置和医疗信息显示方法
    • US20090225102A1
    • 2009-09-10
    • US12396647
    • 2009-03-03
    • Yosuke OkuboHiroyuki Yamasaki
    • Yosuke OkuboHiroyuki Yamasaki
    • G09G5/00
    • G06F17/30265G06F19/00G06F19/321G16H40/63
    • In a medical-image observation apparatus, an image display-area display-control unit causes a display unit to display a main examination area for displaying a thumbnail of a medical image to be read, and an observation-image preparation area for displaying a thumbnail of a medical image selected as a medical image to be used for comparative image reading. After a reading-subject image display-control unit causes the display unit to display a thumbnail of a medical image to be read in the main examination area, upon receiving an operation of moving the medical image of which thumbnail is displayed in the main examination area into the observation-image preparation area, a comparison-subject image display-control unit specifies a medical image to be a comparison subject based on attribution information about the moved medical image, and causes the display unit to display a thumbnail of the specified medical image.
    • 在医疗图像观察装置中,图像显示区域显示控制单元使显示单元显示用于显示要读取的医用图像的缩略图的主检查区域和用于显示缩略图的观察图像准备区域 选择为用于比较图像读取的医学图像的医学图像。 在读取对象图像显示控制单元使得显示单元在主检查区域中显示要读取的医学图像的缩略图时,在接收到在主检查区域中移动显示哪个缩略图的医学图像的操作时 比较对象图像显示控制单元基于与移动的医用图像有关的属性信息来指定作为比较对象的医学图像,并且使显示单元显示指定的医学图像的缩略图 。
    • 30. 发明申请
    • FORMATION OF A TRENCH SILICIDE
    • 形成硅胶
    • US20130270614A1
    • 2013-10-17
    • US13448513
    • 2012-04-17
    • Hiroyuki Yamasaki
    • Hiroyuki Yamasaki
    • H01L29/78H01L21/28H01L21/336
    • H01L29/0847H01L21/28518H01L21/76814H01L21/76816H01L21/76834H01L21/76897H01L29/665H01L29/78
    • Systems and methods are presented for controlling formation of a silicide region. A selective etch layer is utilized to control formation of a trench opening, and further can be utilized to open up a trench to facilitate correct exposure of an active Si region to subsequently form a silicide. Issues regarding over-dimension, under-dimension, and misalignment of a trench are addressed. The selective etch material is chosen to facilitate control of the trench formation and also to enable removal of the selective etch layer without affecting any adjacent structures/material. The selective etch layer can be an oxide, for example aluminum oxide, Al2O3. The selective etch layer can be utilized to prevent formation of silicide in a channel beneath a raised source/drain.
    • 呈现用于控制硅化物区域的形成的系统和方法。 使用选择性蚀刻层来控制沟槽开口的形成,并且还可以用于打开沟槽以促进有源Si区域的正确曝光以随后形成硅化物。 关于沟槽尺寸过大,尺寸不合格和未对准的问题得到了解决。 选择性蚀刻材料被选择以便于控制沟槽形成,并且还能够去除选择性蚀刻层而不影响任何相邻的结构/材料。 选择性蚀刻层可以是氧化物,例如氧化铝,Al 2 O 3。 选择性蚀刻层可用于防止在升高的源极/漏极下方的沟道中形成硅化物。