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21. 发明授权

US06898310B1 Image signal processing method, image signal processing system, storage medium, and image sensing apparatus 有权
标题翻译：图像信号处理方法，图像信号处理系统，存储介质和图像感测装置
公开(公告)号：US06898310B1
公开(公告)日：2005-05-24
申请号：US09343186
申请日：1999-06-30
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Takahiro Nakayama , Tatsuo Morimoto
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Takahiro Nakayama , Tatsuo Morimoto
IPC分类号： H04N5/225 , H04N1/41 , H04N1/60 , H04N1/64 , H04N9/04 , H04N9/64 , H04N9/69 , H04N9/73 , H04N9/804 , H04N9/808 , H04N11/04 , G06K9/00
CPC分类号： H04N1/60 , H04N1/64 , H04N9/643
摘要： An image signal processing method and system, which can greatly reduce the data size upon transmitting an image signal or storing the signal in a storage medium, and can obtain a high-quality image by preventing image quality after color processing from deteriorating. According to the method for processing an image signal output from an image sensing element, a compression step of compressing the image signal and an expansion step of expanding the compressed image signal are executed without executing color processing for executing at least white balance correction or correction, and the color processing is executed after completion of the compression and expansion steps, thereby preventing occurrence of block noise and high-frequency noise associated with compressing/expanding image data after the color processing of the image signal.
摘要翻译：一种图像信号处理方法和系统，其可以在发送图像信号或将信号存储在存储介质中时大大减少数据大小，并且可以通过防止颜色处理之后的图像质量劣化而获得高质量图像。根据用于处理从图像感测元件输出的图像信号的方法，执行压缩图像信号的压缩步骤和扩展压缩图像信号的扩展步骤，而不执行至少执行白平衡校正或y校正的颜色处理，并且在完成压缩和扩展步骤之后执行颜色处理，从而防止在图像信号的颜色处理之后发生与压缩/扩大图像数据相关联的块噪声和高频噪声。

22. 发明授权

US07110030B1 Solid state image pickup apparatus 有权
标题翻译：固态摄像装置
公开(公告)号：US07110030B1
公开(公告)日：2006-09-19
申请号：US09264719
申请日：1999-03-09
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/374
摘要： In the solid state image pickup apparatus, in order to achieve complete transfer of the charge from the photodiode to the floating diffusion area, there is provided a pickup apparatus having a photoelectric conversion element, a transfer switch consisting of a MOS transistor for transferring the signal charge generated in the photoelectric conversion element, a floating diffusion capacitance for receiving the signal charge through the transfer switch, and a reset switch consisting of a MOS transistor for resetting the potential of the floating diffusion capacitance, the device comprising at least a potential setting circuit for generating a voltage different from the power supply voltage, wherein the output of the potential setting circuit is applied as a pulse to the gate of the transfer switch and/or the gate of the reset switch.
摘要翻译：在固态图像拾取装置中，为了实现电荷从光电二极管完全转移到浮动扩散区域，提供了一种拾取装置，其具有光电转换元件，由用于传送信号的MOS晶体管组成的转移开关在光电转换元件中产生的电荷，用于通过转移开关接收信号电荷的浮动扩散电容，以及由用于复位浮动扩散电容的电位的MOS晶体管组成的复位开关，该器件至少包括电位设置电路用于产生不同于电源电压的电压，其中电位设置电路的输出作为脉冲施加到转换开关的栅极和/或复位开关的栅极。

23. 发明授权

US06963372B1 Solid-state image sensing apparatus and method of operating the same 失效
标题翻译：固态摄像装置及其操作方法
公开(公告)号：US06963372B1
公开(公告)日：2005-11-08
申请号：US09291006
申请日：1999-04-14
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
IPC分类号： H04N5/365 , H04N5/3745 , H04N5/378 , H04N3/14 , H04N5/335
CPC分类号： H04N5/3745 , H04N5/3658 , H04N5/378
摘要： In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.
摘要翻译：在固态摄像装置中，每个像素包括光电二极管，栅极接收由光电二极管产生的光电荷的MOS放大器，以及用于控制光电二极管与MOS放大器的栅极之间的连接的MOS开关，在MOS放大器的栅极下方形成通道的情况下，从光电二极管到MOS放大器的栅极的光电荷进行。

24. 发明授权

US06587603B1 Sensor unit capable of outputting image signals by blocks and processing circuit which processes image signals by blocks 有权
标题翻译：能够通过块输出图像信号的传感器单元和通过块处理图像信号的处理电路
公开(公告)号：US06587603B1
公开(公告)日：2003-07-01
申请号：US09347262
申请日：1999-07-06
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： G06K700
CPC分类号： G06T1/0007
摘要： Control to read signals from a sensor unit having a plurality of pixels by pixel blocks of a predetermined size, and the read signals are applied an operation to acquire distinctive information by pixel blocks of the predetermined size. The calculated distinctive information is applied to signal processes, such as signal compression, performed by a block.
摘要翻译：控制从具有预定尺寸的多个像素块的传感器单元读取信号，并且读取信号被施加以通过预定尺寸的像素块获取不同信息的操作。计算的特征信息被应用于由块执行的信号处理，例如信号压缩。

25. 发明授权

US06684000B1 Image sensing device capable of outputting image signals by blocks and processing circuit which processes image signals by blocks 失效
标题翻译：能够通过块输出图像信号的图像感测装置和通过块处理图像信号的处理电路
公开(公告)号：US06684000B1
公开(公告)日：2004-01-27
申请号：US09346683
申请日：1999-07-02
申请人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
发明人： Katsuhito Sakurai , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： G06K920
CPC分类号： H04N9/045 , H04N5/341
摘要： Control to read signals from a sensor unit having a plurality of pixels by pixel blocks of a predetermined size, and the read signals are processed into pseudo luminance and color signals by pixel blocks of the predetermined size.
摘要翻译：控制从具有预定大小的多个像素像素块的传感器单元读取信号，并且通过预定大小的像素块将读出的信号处理成伪亮度和颜色信号。

26. 发明申请

US20100155787A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20100155787A1
公开(公告)日：2010-06-24
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

27. 发明授权

US08138528B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US08138528B2
公开(公告)日：2012-03-20
申请号：US12716488
申请日：2010-03-03
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
摘要翻译：在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体在转移MOS晶体管的栅极电极下方。

28. 发明授权

US07705373B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07705373B2
公开(公告)日：2010-04-27
申请号：US11773731
申请日：2007-07-05
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L29/76
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元，位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极半导体区域，以将电荷载体从第二半导体区域转移到第四半导体区域。光电转换单元和转移MOS晶体管设置在基板上。第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在在第四半导体区域中的栅电极。转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

29. 发明授权

US06661459B1 Solid state image pickup device with LDD structure and reset transistor 有权
标题翻译：具有LDD结构和复位晶体管的固态图像拾取器件
公开(公告)号：US06661459B1
公开(公告)日：2003-12-09
申请号：US09271887
申请日：1999-03-18
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N314
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type formed in the first region, and a third region of the first conductive type present between the second region and the principal surface, a fourth region of the second conductive type formed in the first region, and a charge transfer unit including the first region, an insulation layer on the first region and a control electrode provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region, wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region of the second conductive type.
摘要翻译：在固态图像拾取装置中，为了形成具有精确控制的杂质浓度和宽度的旁路区域，提供了一种固态图像拾取装置，其包括光电转换单元，该光电转换单元由形成在第一导电类型的第一导电类型的第一区域半导体基板，具有主表面，形成在第一区域中的第二导电类型的第二区域和存在于第二区域和主表面之间的第一导电类型的第三区域，形成第二导电类型的第四区域在所述第一区域中，以及电荷转移单元，所述电荷转移单元包括所述第一区域，所述第一区域上的绝缘层和设置在所述绝缘层上的控制电极，用于将累积在所述光电转换单元中的信号电荷转移到所述第四区域，其中光电转换单元和电荷转移单元通过第二导电类型的第五区连接。

30. 发明申请

US20120146100A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20120146100A1
公开(公告)日：2012-06-14
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

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