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21. 发明申请

US20060177953A1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060177953A1
公开(公告)日：2006-08-10
申请号：US11052114
申请日：2005-02-08
申请人： Tatsuya Takeuchi
发明人： Tatsuya Takeuchi
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/0243 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： A method of fabricating a semiconductor device includes the steps of forming a step region having a mesa shape in a direction of or on a (100) plane of an InP-based compound semiconductor crystal, and burying the step region with InP-based buried layers grown by vapor-phase growth by supplying a base gas to which a chlorinated organic compound is added, the organic chlorine compound including at least two carbon atoms, and each of the carbon atoms is bonded to one chlorine (Cl) atom in one molecule. The chlorinated organic compound is any one of 1,2-dichloroethane, 1,2-dichloropropane, and 1,2-dichloroethylene.
摘要翻译：制造半导体器件的方法包括以下步骤：在InP基化合物半导体晶体的（100）平面上形成具有台面形状的步骤区域（011）或<0-11>的方法，并且将通过提供添加了氯化有机化合物的基础气体，含有至少两个碳原子的有机氯化合物和每个碳原子与一个氯键合，通过气相生长生长的基于InP的掩埋层的步骤区域（Cl）原子。氯化有机化合物是1,2-二氯乙烷，1,2-二氯丙烷和1,2-二氯乙烯中的任一种。

22. 发明授权

US06628580B1 Optical recording and reproducing apparatus 有权
标题翻译：光学记录和再现设备
公开(公告)号：US06628580B1
公开(公告)日：2003-09-30
申请号：US09545877
申请日：2000-04-07
申请人： Takashi Kishimoto , Takeharu Yamamoto , Katsuya Watanabe , Tatsuya Takeuchi
发明人： Takashi Kishimoto , Takeharu Yamamoto , Katsuya Watanabe , Tatsuya Takeuchi
IPC分类号： G11B700
CPC分类号： G11B7/08529 , G11B7/08517 , G11B7/0906 , G11B7/0917 , G11B7/0953 , G11B2007/0013
摘要： In track jumping or focus jumping in an optical recording and reproducing apparatus for an optical disk, a light beam is accelerated and decelerated from a track to an adjacent one or from an information plane to an adjacent one in the optical disk. A moving time of light beam under acceleration to an adjacent track or information plane for jumping is measured from the start of acceleration to a predetermined point according to tracking o focus error signal. Then, the deceleration signal for tracking or focus actuator is changed on amplitude or period according to the measured period. Thus, track or focus jumping can be performed stably against external disturbances. Alternatively, the light beam is forced to be driven until the level of the tracking or focus error signal is decreased below a predetermined value after the output of the deceleration signal is completed.
摘要翻译：在用于光盘的光学记录和再现装置中的轨道跳跃或聚焦跳跃中，光束从光盘到光盘加速和减速到相邻的一个或从信息平面到相邻的一个。根据跟踪o聚焦误差信号，从加速开始到预定点测量加速下的光束到相邻轨迹或信息平面的移动时间。然后，跟踪或聚焦致动器的减速信号根据测量周期在幅度或周期上改变。因此，可以针对外部干扰稳定地执行跟踪或聚焦跳跃。或者，在完成减速信号的输出之后，迫使光束被驱动直到跟踪或聚焦误差信号的电平降低到预定值以下。

23. 发明授权

US6115538A Steam supplying apparatus and method for controlling same 失效
标题翻译：蒸汽供给装置及其控制方法
公开(公告)号：US6115538A
公开(公告)日：2000-09-05
申请号：US462561
申请日：1995-06-05
申请人： Keisuke Shinagawa , Shuzo Fujimura , Yuuji Matoba , Yoshimasa Nakano , Tatsuya Takeuchi , Takeshi Miyanaga
发明人： Keisuke Shinagawa , Shuzo Fujimura , Yuuji Matoba , Yoshimasa Nakano , Tatsuya Takeuchi , Takeshi Miyanaga
IPC分类号： C23C16/448 , H01L21/00 , A61H33/06 , A61H33/12
CPC分类号： H01L21/67017 , C23C16/4485 , H01L21/6715
摘要： A steam supplying apparatus for supplying steam to an ashing process. The apparatus includes a closed water-containing vessel formed from a material having good heat conductive characteristics for evaporating water to provide steam to a vacuum chamber housing an on going ashing process. The closed vessel has a maximum horizontal cross sectional water evaporation area M and a minimum horizontal cross sectional water evaporation area S. The vessel is configured so that M/S
摘要翻译：一种用于向灰化过程供应蒸汽的蒸汽供应装置。该装置包括由具有良好导热特性的材料形成的封闭含水容器，用于蒸发水以将蒸汽提供到容纳进行灰化过程的真空室。密闭容器具有最大水平横截面水蒸发面积M和最小水平横截面水蒸发面积S.容器被配置为使得M / S <8，并且密封容器具有浸没的内表面，其被涂覆有树脂。封闭的含水容器在其中的水表面上方的位置处设置有与其连接的蒸汽出口。该装置还包括用于封闭含水容器的温度控制液槽，并且容器至少部分地浸没在液槽中。

24. 发明授权

US6030452A Planarized growth of III-V compound 失效
标题翻译： III-V化合物的平面生长
公开(公告)号：US6030452A
公开(公告)日：2000-02-29
申请号：US449221
申请日：1995-05-24
申请人： Tatsuya Takeuchi
发明人： Tatsuya Takeuchi
IPC分类号： H01S5/00 , C30B25/02 , H01L21/205 , H01S5/22 , H01S5/227 , H01S5/323 , C30B25/04
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/0243 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L21/02639 , H01S2304/04 , H01S5/2224 , H01S5/32391
摘要： A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.
摘要翻译：一种制造半导体器件的方法包括以下步骤：制备在其表面上具有台阶的半导体衬底，并通过使用添加的源气体的金属有机气相外延在半导体衬底的表面上生长III-V族化合物半导体层每个分子含有一个或两个卤素原子的卤代烃。通过在下层区域上沉积嵌入层，可以使其上具有台阶的基板的表面平坦化。

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