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21. 发明申请

US20100100217A1 Control System and Method for Controlled Object in Time Variant System With Dead Time, Such As Single Crystal Production Device by Czochralski Method 有权
标题翻译：时间变量系统中控制对象的控制系统和方法，如Czochralski法等单晶生产装置
公开(公告)号：US20100100217A1
公开(公告)日：2010-04-22
申请号：US11989749
申请日：2006-06-07
申请人： Kenichi Bandoh , Shigeo Morimoto , Takuji Okumura , Tetsu Nagata , Masaru Shimada , Junsuke Tomioka , Yutaka Shiraishi , Takeshi Kodama
发明人： Kenichi Bandoh , Shigeo Morimoto , Takuji Okumura , Tetsu Nagata , Masaru Shimada , Junsuke Tomioka , Yutaka Shiraishi , Takeshi Kodama
IPC分类号： G05B13/04 , G05B13/02
CPC分类号： C30B15/20 , C30B29/06
摘要： To accurately control controlled object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, the time constant, and the process gain value of a controlled object (CZ equipment) (200) are set. The process gain preset value has specified time variant characteristics. An output value y and its first-order and second-order time differentiated values are used as the state variable x of the controlled object (200). A nonlinear state predicting unit (206) predicts a state variable value x(t+Ld) at a future point in time after the dead time, based upon the current output value y, the dead time, the time constant, and the process gain preset value. A gain scheduled sliding mode control unit (212) performs a gain scheduled sliding mode control operation based upon the state variable value x(t+Ld) at the predicted future point in time, an output deviation z(t+Ld) at the future point in time, the time constant, and the set value of the process gain at the future point in time, to determine the manipulated variable uT of the controlled object (200).
摘要翻译：在具有死区时间的时变系统中精确控制受控对象，例如Czochralski方法单晶生产装置（CZ设备）。设定受控对象（CZ设备）（200）的死区时间，时间常数和过程增益值。过程增益预设值具有指定的时变特征。使用输出值y及其一阶和二阶时间微分值作为受控对象（200）的状态变量x。非线性状态预测单元（206）基于当前输出值y，死区时间，时间常数和处理增益来预测死区时间后的未来时间点的状态变量值x（t + Ld）预设值。增益调度滑动模式控制单元（212）基于预测的未来时间点的状态变量值x（t + Ld），未来的输出偏差z（t + Ld），执行增益调度滑动模式控制操作时间常数和未来时间点处理增益的设定值，以确定受控对象（200）的操纵变量uT。

22. 发明授权

US07390361B2 Semiconductor single crystal manufacturing apparatus and graphite crucible 有权
标题翻译：半导体单晶制造装置和石墨坩埚
公开(公告)号：US07390361B2
公开(公告)日：2008-06-24
申请号：US10594175
申请日：2005-03-31
申请人： Tetsuhiro Iida , Akiko Noda , Junsuke Tomioka
发明人： Tetsuhiro Iida , Akiko Noda , Junsuke Tomioka
IPC分类号： C30B35/00
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A semiconductor single crystal manufacturing apparatus which can manufacture a single crystal of high oxygen concentration to that of low oxygen concentration within a prescribed standard range of oxygen concentration, as a wafer material for semiconductor integrated circuits, with a high yield, is provided. Heat shields 20, 21 are provided in the entire annular area between respective adjacent heaters of the heaters 4a, 4b, 4c for heating the crucible 3 from the outside periphery side. By using the heat shields 20, 21 for localizing the respective heating regions for the heaters to actively control the temperature distribution for the crucible 3 and melt 8 in the crucible, a single crystal of high oxygen concentration to that of low oxygen concentration can be manufactured within a prescribed standard range of oxygen concentration with a high yield.
摘要翻译：提供一种半导体单晶制造装置，其能够以高产率制造作为半导体集成电路的晶片材料的氧浓度的规定标准范围内的高氧浓度的单晶的单晶。隔热罩20,21设置在加热器4a，4b，4c的各个相邻的加热器之间的整个环形区域中，用于从外周侧加热坩埚3。通过使用用于定位用于加热器的各个加热区域的隔热罩20,21来主动地控制坩埚中的坩埚3和熔体8的温度分布，可以制造具有低氧浓度的高氧浓度的单晶在规定的标准氧浓度范围内，产率高。

23. 发明申请

US20070215038A1 Semiconductor Single Crystal Manufacturing Apparatus and Graphite Crucible 有权
标题翻译：半导体单晶制造装置和石墨坩埚
公开(公告)号：US20070215038A1
公开(公告)日：2007-09-20
申请号：US10594175
申请日：2005-03-31
申请人： Tetsuhiro Iida , Akiko Noda , Junsuke Tomioka
发明人： Tetsuhiro Iida , Akiko Noda , Junsuke Tomioka
IPC分类号： C30B29/06
CPC分类号： C30B15/14 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A semiconductor single crystal manufacturing apparatus which can manufacture a single crystal of high oxygen concentration to that of low oxygen concentration within a prescribed standard range of oxygen concentration, as a wafer material for semiconductor integrated circuits, with a high yield, is provided. Heat shields 20, 21 are provided in the entire annular area between respective adjacent heaters of the heaters 4a, 4b, 4c for heating the crucible 3 from the outside periphery side. By using the heat shields 20, 21 for localizing the respective heating regions for the heaters to actively control the temperature distribution for the crucible 3 and melt 8 in the crucible, a single crystal of high oxygen concentration to that of low oxygen concentration can be manufactured within a prescribed standard range of oxygen concentration with a high yield.
摘要翻译：提供一种半导体单晶制造装置，其能够以高产率制造作为半导体集成电路的晶片材料的氧浓度的规定标准范围内的高氧浓度的单晶的单晶。隔热罩20,21设置在加热器4a，4b，4c的各个相邻的加热器之间的整个环形区域中，用于从外周侧加热坩埚3。通过使用用于定位用于加热器的各个加热区域的隔热罩20,21来主动地控制坩埚中的坩埚3和熔体8的温度分布，可以制造具有低氧浓度的高氧浓度的单晶在规定的标准氧浓度范围内，产率高。

24. 发明授权

US06273944B1 Silicon wafer for hydrogen heat treatment and method for manufacturing the same 有权
标题翻译：氢热处理用硅片及其制造方法
公开(公告)号：US06273944B1
公开(公告)日：2001-08-14
申请号：US09544556
申请日：2000-04-06
申请人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B33/02 , C30B29/06 , C30B33/00
摘要： In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080° C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0° C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0×106/cm3 or a FPD density of larger than 6.0×105/cm3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 &mgr;m from the wafer surface.
摘要翻译：在通过CZ法生长硅单晶的过程中，形成生长缺陷的1150-1080℃温度区（缺陷形成温度范围）的冷却速度设定在2.0C / min以上以制造单具有大于3.0×10 6 / cm 3的生长的LSTD密度或大于6.0×10 5 / cm 3的FPD密度的晶体。由于该单晶具有小的缺陷尺寸，因此通过在含有氢气的非氧化性气氛中的热处理，缺陷的溶解速度增加，因此氢热处理的效果可以延伸至3μm以上的深度从晶片表面

25. 发明授权

US5938836A Apparatus and method for manufacturing semiconductor single crystals 失效
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：US5938836A
公开(公告)日：1999-08-17
申请号：US956434
申请日：1997-10-23
申请人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
发明人： Junsuke Tomioka , Hiroshi Inagaki , Katsura Yamamoto
IPC分类号： C30B30/04 , C30B15/30 , H01L21/208 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1004
摘要： This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.
摘要翻译：本发明提供一种用于制造半导体单晶的装置和方法，其能够通过CZ方法辅助通过应用Cusp磁场在C单独晶体生长期间提升高质量单晶硅的稳定过程。三面体上的单极磁体（以下称为磁体）1,2和3设置在单晶提拉室的外侧。磁体3位于与石英坩埚5中储存的熔体6的熔融物6的自由表面相同的高度，作为储存在石英坩埚5中的熔体6的自由表面。此外，磁体3的强度设定得较弱磁体3的磁通线在水平方向基本上通过石英坩埚5。然而，磁体3的磁通线未到达上拉的单晶硅7。垂直于熔体6的自由表面的磁通线和晶体生长边界附近的磁场的强度降低。因此，可以使来自石英坩埚5的氧的量和从石英坩埚5向硅单晶开始的熔融物6的自由表面附近的对流最小化。

26. 发明授权

US5885347A Apparatus and method for lifting single crystals 失效
标题翻译：单晶提升装置及方法
公开(公告)号：US5885347A
公开(公告)日：1999-03-23
申请号：US15132
申请日：1998-01-29
申请人： Junsuke Tomioka , Hiroshi Inagaki , Ayumi Suda , Toshimichi Kubota
发明人： Junsuke Tomioka , Hiroshi Inagaki , Ayumi Suda , Toshimichi Kubota
IPC分类号： C30B15/30 , B01D53/02
CPC分类号： C30B15/30 , Y10T117/1008 , Y10T117/1072
摘要： The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.
摘要翻译：本发明的目的是提供一种通过CZ方法制造半导体单晶的方法和装置，以响应所制造的半导体单晶的重量的增加。形成在缩小部分下方的颈部可以被保持，提升的单晶可以再熔化。

27. 发明授权

US5441014A Apparatus for pulling up a single crystal 失效
标题翻译：用于拉起单晶的装置
公开(公告)号：US5441014A
公开(公告)日：1995-08-15
申请号：US170175
申请日：1993-12-22
申请人： Junsuke Tomioka , Kazunori Nagai , Akihiro Matsuzaki
发明人： Junsuke Tomioka , Kazunori Nagai , Akihiro Matsuzaki
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： An apparatus for pulling up a single crystal according to Czochralski method is provided with a cylindrical first screen and a second screen. The first screen is arranged in the periphery of the zone of pulling up the single crystal, said screen being constituted by a heat absorbing body at the side facing a quartz crucible and by a heat insulator at the other side and being provided with respective outward and inward annular rims at the upper and lower ends thereof, the corner of said screen facing the crucible being formed in a curved or polygonal structure, and said annular rim at the lower end being positioned in the vicinity of filling the melt in the crucible. The second screen forming a parabolic shape in the section opening at its center while enclosing the crystal pulling-up zone and being provided at its upper end with an outward annular rim. Alternately, the second screen formed along the first screen may be provided within said first screen, and further the second screen may be provided with a forced cooling mechanism.
摘要翻译： PCT No.PCT / JP91 / 00849 Sec。 371日期：1993年12月22日 102（e）日期1993年12月22日PCT Filed 1991年6月24日PCT Pub。出版物WO93 / 00462 日期为1993年12月22日。根据切克劳斯基法提取单晶的装置设置有圆柱形第一屏和第二屏。第一屏幕布置在提拉单晶区域的周围，所述屏幕由面对石英坩埚的一侧的吸热体和另一侧的隔热件构成，并且设置有相应的外部和在其上端和下端处有向内的环形边缘，所述屏幕的面向坩埚的角部形成为弯曲或多边形结构，并且位于下端处的所述环形边缘位于将坩埚中的熔体填充的附近。第二屏幕在其中心处的部分开口中形成抛物线形状，同时包围晶体提升区域并且在其上端处设置有向外的环形边缘。或者，沿着第一屏幕形成的第二屏幕可以设置在所述第一屏幕内，并且第二屏幕还可以设置有强制冷却机构。

28. 发明授权

US5316742A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5316742A
公开(公告)日：1994-05-31
申请号：US772928
申请日：1991-10-08
申请人： Junsuke Tomioka , Kazunori Nagai , Akihiro Matsuzaki
发明人： Junsuke Tomioka , Kazunori Nagai , Akihiro Matsuzaki
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B35/00 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068
摘要： A single crystal pulling apparatus using Czochralski method includes a first screen in the shape of a hollow round cylinder. One side of the first screen facing a quartz crucible is made of a heat absorbent material and another side of the first screen is made of a heat insulator material. The upper and lower ends of the first screen have an outwardly extending flange and an inwardly extending flange, respectively. The first screen surrounds a single crystal pulling zone such that its lower flange is positioned near a melt charged zone in the crucible. The apparatus also includes a second screen positioned inside the first screen. The vertical section of the second screen has the shape of a substantially parabola and the center of the bottom of the second screen is open and surrounds the single crystal pulling zone. The upper end of the second screen has an outwardly extending flange. The apparatus increases the pulling speed of a grown single crystal and improves preventing degree of dislocation in the grown single crystal due to contamination of the grown single crystal with impurities.
摘要翻译：使用切克劳斯基法的单晶拉制装置包括中空圆筒形状的第一筛网。面对石英坩埚的第一屏幕的一侧由吸热材料制成，第一屏幕的另一侧由绝热材料制成。第一屏幕的上端和下端分别具有向外延伸的凸缘和向内延伸的凸缘。第一屏幕围绕单晶拉伸区域，使得其下凸缘位于坩埚内的熔融带区附近。该设备还包括位于第一屏幕内的第二屏幕。第二屏幕的垂直部分具有大致抛物线的形状，并且第二屏幕的底部的中心是打开的并且围绕单晶拉伸区域。第二屏幕的上端具有向外延伸的凸缘。该装置增加了生长的单晶的拉伸速度，并且由于生长的单晶与杂质的污染而改善了防止生长的单晶中的位错程度。

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