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    • 21. 发明授权
    • Magnetic tape head assembly including modules having a plurality of
magneto-resistive head elements
    • 磁带头组件包括具有多个磁阻头元件的模块
    • US5963401A
    • 1999-10-05
    • US939773
    • 1997-09-29
    • Richard H. DeeJames C. Cates
    • Richard H. DeeJames C. Cates
    • G11B5/00G11B5/31G11B5/39G11B5/48G11B5/127
    • G11B5/3935G11B5/3903G11B5/3948G11B5/4893G11B2005/0018G11B5/3103G11B5/3106G11B5/398
    • A magnetic tape head assembly is disclosed for use with a magnetic tape storage medium. The assembly includes an interior tape head module having a magnetic gap with 18 tape head elements, and a first exterior tape head module adjacent to one side of the interior tape head module, the first exterior tape head module having a magnetic gap with 18 tape head elements. The assembly also includes a second exterior tape head module adjacent to the other side of the interior tape head module, the second exterior tape head module having a magnetic gap with 18 tape head elements. The distances between consecutive magnetic gaps of the interior and exterior modules are each approximately 0.150 inches, the interior and exterior modules together define a tape interface contour, and the tape head assembly is capable of writing and reading a high coercivity, high density metal particle tape media, and reading a low density CrO.sub.2 tape media. In the preferred embodiment, the interior module is a write head with 18 write elements, and the exterior modules are each read heads with 18 read elements.
    • 公开了一种用于磁带存储介质的磁带头组件。 该组件包括具有与18个带头元件的磁隙的内部带头模块,以及与内部带头模块的一侧相邻的第一外部带头模块,第一外部带头模块具有与18带头 元素。 组件还包括与内部带头模块的另一侧相邻的第二外部带头模块,第二外部带头模块具有带有18个带头元件的磁隙。 内部和外部模块的连续磁隙之间的距离大约为0.150英寸,内部和外部模块一起限定磁带接口轮廓,并且磁带头组件能够书写和读取高矫顽力,高密度金属颗粒带 介质和阅读低密度CrO2磁带介质。 在优选实施例中,内部模块是具有18个写入元件的写入头,并且外部模块各自具有18个读取元件的读取头。
    • 22. 发明授权
    • Method for fabricating magnetic heads having varying gap lengths on a
common wafer
    • 在公共晶片上制造具有不同间隙长度的磁头的方法
    • US5855056A
    • 1999-01-05
    • US975223
    • 1997-11-20
    • James C. Cates
    • James C. Cates
    • G11B5/31G11B5/48G11B5/584G11B5/127
    • G11B5/4893G11B5/3103G11B5/3116G11B5/313G11B5/3163G11B5/584Y10T29/49044
    • An improved method for forming a magnetic head which efficiently allows multiple head elements of varying gap length to be located on a common wafer. A multiple gap magnetic head is formed by depositing a first magnetic layer on a wafer such that the first layer extends across all the head element segments Two separate insulating layers are individually deposited over the first layer, with a thin etch stop barrier layer being deposited between the insulation layers over heads which are to have a narrower gap length. The top insulation layer covering the etch stop barrier layer is then removed, and a second magnetic layer deposited over all the head element segments on the wafer. In addition to simplifying the fabrication process, the etch stop layer allows tight processing control to be maintained when creating the different gap lengths.
    • 一种用于形成磁头的改进方法,其有效地允许具有变化的间隙长度的多个头元件位于公共晶片上。 多晶硅磁头通过在晶片上沉积第一磁性层而形成,使得第一层延伸穿过所有磁头元件段。两个分离的绝缘层分别沉积在第一层上,薄的蚀刻阻挡层被沉积在 在头部上的绝缘层将具有较窄的间隙长度。 然后去除覆盖蚀刻停止阻挡层的顶部绝缘层,并且沉积在晶片上的所有头部元件段上的第二磁性层。 除了简化制造工艺之外,当产生不同的间隙长度时,蚀刻停止层允许保持紧密的处理控制。
    • 23. 发明授权
    • Magnetic barrier for gap control in interleaved tape head design
    • 用于交错磁带头设计中的间隙控制的磁屏障
    • US5811018A
    • 1998-09-22
    • US594851
    • 1996-01-31
    • Diane C. EwaskoJames C. Cates
    • Diane C. EwaskoJames C. Cates
    • G11B5/31G11B5/33G11B5/39B44C1/22
    • G11B5/3967G11B5/332G11B5/314G11B5/3163
    • The present invention discloses an improved structure and method for forming an interleaved magnetic head. In one aspect, an interleaved magnetic head is formed by providing a wafer comprising a first thick magnetic layer extending across read and write segments of the head and patterned to form a first read shield and a first write pole and, in a second step, a second thick magnetic layer is formed across the read and write segments of the head at substantially the same time to provide substantially all of a second read shield and substantially all of a second write pole. A write gap between the write poles may be formed in such a manner as to have a different thickness than the read gap between the read shields. In addition, tight processing control is maintained over the critical read gap thickness.
    • 本发明公开了一种用于形成交错磁头的改进的结构和方法。 在一个方面中,交错磁头通过提供晶片形成,该晶片包括延伸穿过磁头的读取和写入段的第一厚磁层,并被图案化以形成第一读取屏蔽和第一写入磁极,并且在第二步骤中, 基本上相同的时间在头部的读取和写入部分之间形成第二厚的磁性层,以提供基本上所有的第二读取屏蔽和基本上所有的第二写入极。 写极之间的写入间隙可以形成为具有与读屏蔽之间的读取间隙不同的厚度。 此外,在关键读取间隙厚度上保持严格的处理控制。