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21. 发明授权

US08279388B2 Thin film transistor array panel and a method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08279388B2
公开(公告)日：2012-10-02
申请号：US12499212
申请日：2009-07-08
申请人： Young-Wook Lee , Jang-Soo Kim , Kang-Woo Kim , Youn-Hak Jeong
发明人： Young-Wook Lee , Jang-Soo Kim , Kang-Woo Kim , Youn-Hak Jeong
IPC分类号： G02F1/1343 , G02F1/1335
CPC分类号： G02F1/136286 , G02F1/136209 , G02F2001/136222 , G02F2001/13629
摘要： A liquid crystal display includes a first substrate, a plurality of gate lines formed on the first substrate, a plurality of data lines intersecting the gate lines, a plurality of thin film transistors connected to the gate lines and the data lines, a plurality of color filters formed on the gate lines, the data lines, and the thin film transistors, a plurality of first electrodes made of a transparent conductor formed on the color filters, and electrically connected to the thin film transistors, a first passivation layer formed on the first electrodes, a second electrode formed on the first passivation layer, and including a plurality of branch electrodes, a second substrate facing the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate.
摘要翻译：液晶显示器包括第一基板，形成在第一基板上的多个栅极线，与栅极线交叉的多个数据线，连接到栅极线和数据线的多个薄膜晶体管，多个颜色形成在栅极线，数据线和薄膜晶体管上的滤波器，形成在滤色器上的透明导体制成的多个第一电极，并与薄膜晶体管电连接;第一钝化层，形成在第一电极，形成在第一钝化层上的第二电极，并且包括多个分支电极，面对第一基板的第二基板和设置在第一基板和第二基板之间的液晶层。

22. 发明申请

US20120007088A1 THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120007088A1
公开(公告)日：2012-01-12
申请号：US13238788
申请日：2011-09-21
申请人： Young-Wook Lee , Jang-Soo Kim
发明人： Young-Wook Lee , Jang-Soo Kim
IPC分类号： H01L33/08 , H01L33/16
CPC分类号： H01L27/124 , G02F1/136209 , G02F1/136286 , G02F1/1365 , G02F1/1368 , G02F2001/134372 , G02F2001/136222 , G02F2001/13629 , H01L27/1248
摘要： A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要翻译：薄膜晶体管阵列面板包括基板; 形成在所述基板上的多条栅极线; 与栅极线相交的多条数据线; 连接到栅极线和数据线的多个薄膜晶体管; 形成在栅极线，数据线和薄膜晶体管的上部的多个滤色器; 形成在滤色器上并且包括透明导体的公共电极; 钝化层，其形成在所述公共电极的上部; 以及形成在钝化层的上部并且连接到每个薄膜晶体管的漏电极的多个像素电极。

23. 发明申请

US20090152635A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 有权
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20090152635A1
公开(公告)日：2009-06-18
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang JEONG , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

24. 发明申请

US20080252828A1 THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY 有权
标题翻译：薄膜晶体管阵列显示器
公开(公告)号：US20080252828A1
公开(公告)日：2008-10-16
申请号：US11930653
申请日：2007-10-31
申请人： Kyoung-Ju Shin , Hye-Young Ryu , Jang-Soo Kim , Chong-Chul Chal , Jae-Hyoung Youn , Young-Wook Lee
发明人： Kyoung-Ju Shin , Hye-Young Ryu , Jang-Soo Kim , Chong-Chul Chal , Jae-Hyoung Youn , Young-Wook Lee
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/133514 , G02F1/134309 , G02F2001/134345 , G02F2001/136222
摘要： A thin film transistor array panel includes a substrate, a first gate line and a second gate line formed on the substrate, a storage electrode line between the first gate line and the second gate line, a data line intersecting the first gate line and the second gate line, a first thin film transistor connected to the first gate line and the data line, at least one color filter formed on the first thin film transistor, wherein the color filter comprises a first portion adjacent the first gate line with respect to the storage electrode line, a second portion adjacent the second gate line with respect to the storage electrode line, and a first connection connecting the first portion and the second portion and having a narrower width than that of the first and second portions, a first sub-pixel electrode formed on the color filter and connected to the first thin film transistor, and a second sub-pixel electrode facing the first sub-pixel electrode with respect to a gap, wherein at least one of an edge of the first sub-pixel electrode and an edge of the second sub-pixel electrode crosses over the first connection of the color filter, the edge of the first sub-pixel electrode, and the edge of the second sub-pixel electrode defining the gap between the first sub-pixel electrode and the second sub-pixel electrode.
摘要翻译：薄膜晶体管阵列面板包括基板，形成在基板上的第一栅极线和第二栅极线，在第一栅极线和第二栅极线之间的存储电极线，与第一栅极线和第二栅极线相交的数据线栅极线，连接到第一栅极线和数据线的第一薄膜晶体管，形成在第一薄膜晶体管上的至少一个滤色器，其中滤色器包括相对于存储器的第一栅极线的第一部分电极线，相对于存储电极线相邻于第二栅极线的第二部分，以及连接第一部分和第二部分并且具有比第一和第二部分窄的宽度的第一连接，第一子像素电极，形成在滤色器上并连接到第一薄膜晶体管，第二子像素电极相对于间隙面对第一子像素电极，其中至少在第一子像素电极的边缘和第二子像素电极的边缘的第二子像素电极的边缘与滤色器的第一连接，第一子像素电极的边缘和第二子像素电极的边缘交叉限定第一子像素电极和第二子像素电极之间的间隙的电极。

25. 发明授权

US07880833B2 Thin film transistor array panel for a display 有权
标题翻译：用于显示器的薄膜晶体管阵列面板
公开(公告)号：US07880833B2
公开(公告)日：2011-02-01
申请号：US11930653
申请日：2007-10-31
申请人： Kyoung-Ju Shin , Hye-Young Ryu , Jang-Soo Kim , Chong-Chul Chal , Jae-Hyoung Youn , Young-Wook Lee
发明人： Kyoung-Ju Shin , Hye-Young Ryu , Jang-Soo Kim , Chong-Chul Chal , Jae-Hyoung Youn , Young-Wook Lee
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/133514 , G02F1/134309 , G02F2001/134345 , G02F2001/136222
摘要： A thin film transistor array panel includes a substrate, a first gate line and a second gate line formed on the substrate, a storage electrode line between the first gate line and the second gate line, a data line intersecting the first gate line and the second gate line, a first thin film transistor connected to the first gate line and the data line, at least one color filter formed on the first thin film transistor, wherein the color filter comprises a first portion adjacent the first gate line with respect to the storage electrode line, a second portion adjacent the second gate line with respect to the storage electrode line, and a first connection connecting the first portion and the second portion and having a narrower width than that of the first and second portions, a first sub-pixel electrode formed on the color filter and connected to the first thin film transistor, and a second sub-pixel electrode facing the first sub-pixel electrode with respect to a gap, wherein at least one of an edge of the first sub-pixel electrode and an edge of the second sub-pixel electrode crosses over the first connection of the color filter, the edge of the first sub-pixel electrode, and the edge of the second sub-pixel electrode defining the gap between the first sub-pixel electrode and the second sub-pixel electrode.
摘要翻译：薄膜晶体管阵列面板包括基板，形成在基板上的第一栅极线和第二栅极线，在第一栅极线和第二栅极线之间的存储电极线，与第一栅极线和第二栅极线相交的数据线栅极线，连接到第一栅极线和数据线的第一薄膜晶体管，形成在第一薄膜晶体管上的至少一个滤色器，其中滤色器包括相对于存储器的第一栅极线的第一部分电极线，相对于存储电极线相邻于第二栅极线的第二部分，以及连接第一部分和第二部分并且具有比第一和第二部分窄的宽度的第一连接，第一子像素电极，形成在滤色器上并连接到第一薄膜晶体管，第二子像素电极相对于间隙面对第一子像素电极，其中至少在第一子像素电极的边缘和第二子像素电极的边缘的第二子像素电极的边缘与滤色器的第一连接，第一子像素电极的边缘和第二子像素电极的边缘交叉限定第一子像素电极和第二子像素电极之间的间隙的电极。

26. 发明申请

US20090315033A1 THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20090315033A1
公开(公告)日：2009-12-24
申请号：US12548897
申请日：2009-08-27
申请人： Young-Wook Lee , Jang-Soo Kim
发明人： Young-Wook Lee , Jang-Soo Kim
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/136209 , G02F1/136286 , G02F1/1365 , G02F1/1368 , G02F2001/134372 , G02F2001/136222 , G02F2001/13629 , H01L27/1248
摘要： A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要翻译：薄膜晶体管阵列面板包括基板; 形成在所述基板上的多条栅极线; 与栅极线相交的多条数据线; 连接到栅极线和数据线的多个薄膜晶体管; 形成在栅极线，数据线和薄膜晶体管的上部的多个滤色器; 形成在滤色器上并且包括透明导体的公共电极; 钝化层，其形成在所述公共电极的上部; 以及形成在钝化层的上部并且连接到每个薄膜晶体管的漏电极的多个像素电极。

27. 发明申请

US20070046847A1 Thin film transistor array panel and a method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20070046847A1
公开(公告)日：2007-03-01
申请号：US11487837
申请日：2006-07-17
申请人： Young-Wook Lee , Jang-Soo Kim
发明人： Young-Wook Lee , Jang-Soo Kim
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/136209 , G02F1/136286 , G02F1/1365 , G02F1/1368 , G02F2001/134372 , G02F2001/136222 , G02F2001/13629 , H01L27/1248
摘要： A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
摘要翻译：薄膜晶体管阵列面板包括基板; 形成在所述基板上的多条栅极线; 与栅极线相交的多条数据线; 连接到栅极线和数据线的多个薄膜晶体管; 形成在栅极线，数据线和薄膜晶体管的上部的多个滤色器; 形成在滤色器上并且包括透明导体的公共电极; 钝化层，其形成在所述公共电极的上部; 以及形成在钝化层的上部并且连接到每个薄膜晶体管的漏电极的多个像素电极。

28. 发明授权

US08604469B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US08604469B2
公开(公告)日：2013-12-10
申请号：US12464920
申请日：2009-05-13
申请人： Woo-Geun Lee , Jae-Hyoung Youn , Ki-Won Kim , Young-Wook Lee , Jong-In Kim
发明人： Woo-Geun Lee , Jae-Hyoung Youn , Ki-Won Kim , Young-Wook Lee , Jong-In Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78696
摘要： A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.
摘要翻译：薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，包括栅极电极，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体，形成在半导体上的数据线，包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极，其中薄膜晶体管的沟道覆盖两个侧表面的栅电极。

29. 发明申请

US20110175088A1 Thin-Film Transistor Substrate and Method of Fabricating the Same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20110175088A1
公开(公告)日：2011-07-21
申请号：US13004665
申请日：2011-01-11
申请人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
发明人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
IPC分类号： H01L29/786 , H01L21/28
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1288
摘要： A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.
摘要翻译：使用减少数量的掩模制造具有减少的缺陷的薄膜晶体管（TFT）基板。 TFT基板包括形成在基板上的栅极布线。栅极布线包括栅电极。在栅极布线上形成半导体图形。在半导体图案上形成蚀刻停止图案。数据布线包括形成在半导体图案上的源电极和蚀刻停止图案。栅极布线和数据布线中的每一个包括在含铜层上形成的含铜层和缓冲层。

30. 发明授权

US08624238B2 Thin-film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08624238B2
公开(公告)日：2014-01-07
申请号：US13004665
申请日：2011-01-11
申请人： Jong-In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
发明人： Jong-In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
IPC分类号： H01L21/34 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1288
摘要： A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.
摘要翻译：使用减少数量的掩模制造具有减少的缺陷的薄膜晶体管（TFT）基板。 TFT基板包括形成在基板上的栅极布线。栅极布线包括栅电极。在栅极布线上形成半导体图形。在半导体图案上形成蚀刻停止图案。数据布线包括形成在半导体图案上的源电极和蚀刻停止图案。栅极布线和数据布线中的每一个包括在含铜层上形成的含铜层和缓冲层。

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