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21. 发明授权

US06958491B1 Bipolar transistor test structure with lateral test probe pads 失效
标题翻译：双极晶体管测试结构，具有侧向测试探针焊盘
公开(公告)号：US06958491B1
公开(公告)日：2005-10-25
申请号：US10423676
申请日：2003-04-24
申请人： Berinder P. S. Brar , James Chingwei Li , John A. Higgins
发明人： Berinder P. S. Brar , James Chingwei Li , John A. Higgins
IPC分类号： H01L23/544 , H01L23/58
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads, transistor contacts and air bridges are preferably formed as common metallizations. In the case of an HBT, a gap in the subcollector below the air bridges insulates the test transistor from capacitor loading by the probe pads. The test transistors can be used to characterize both themselves and functional circuit transistors fabricated with the same process on the same wafer by testing at an intermediate stage of manufacture, thus allowing wafers to be discarded without completing the manufacture if their transistors do not meet specifications.
摘要翻译：测试探针焊盘位于双极晶体管的发射极，基极或集电极区域的两侧并且与之隔开，优选地在独立的基座上，并通过气桥连接到它们各自的晶体管区域。探针焊盘，晶体管触点和气桥优选地形成为公共金属化。在HBT的情况下，空气桥下的子集电极的间隙使测试晶体管与探针焊盘的电容负载绝缘。测试晶体管可用于通过在制造的中间阶段进行测试，在同一晶片上以相同工艺制造的本身和功能电路晶体管进行表征，因此如果晶体管不符合规格，就可以丢弃晶片而不完成制造。

22. 发明授权

US06870184B2 Mechanically-stable BJT with reduced base-collector capacitance 有权
公开(公告)号：US06870184B2
公开(公告)日：2005-03-22
申请号：US10631380
申请日：2003-07-30
申请人： James Chingwei Li , Richard L. Pierson, Jr. , Berinder P. S. Brar , John A. Higgins
发明人： James Chingwei Li , Richard L. Pierson, Jr. , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L23/482 , H01L29/423 , H01L29/73 , H01L29/732 , H01L29/737 , H01L29/40
CPC分类号： H01L29/7317 , H01L23/4821 , H01L23/4822 , H01L24/01 , H01L29/42304 , H01L29/732 , H01L29/7371 , H01L2924/1305 , H01L2924/00
摘要： A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. Metal contacts are formed on the subcollector and emitter to provide collector and emitter terminals. Contact to the structure's base is accomplished with a metal contact which extends from the top of the support post to the edge of the base nearest the support post. The contact bridges the physical and electrical separation between the support post and the base and provides a base terminal for the device. The base contact need extend over the edge of the base by no more than the transfer length associated with the fabrication process. This results in the smaller base contact area over the collector than would otherwise be necessary, and a consequent reduction in base-collector capacitance. The invention is particularly useful when forming heterojunction bipolar transistors (HBTs), built on a compound semiconductor substrate such as indium phosphide (InP).

23. 发明授权

US06858887B1 BJT device configuration and fabrication method with reduced emitter width 有权
标题翻译： BJT器件配置和制造方法，发射极宽度减小
公开(公告)号：US06858887B1
公开(公告)日：2005-02-22
申请号：US10632052
申请日：2003-07-30
申请人： James Chingwei Li , Richard L. Pierson, Jr. , Berinder P. S. Brar , John A. Higgins
发明人： James Chingwei Li , Richard L. Pierson, Jr. , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/41708 , H01L29/42304 , H01L29/7371
摘要： A BJT device configuration includes an emitter finger and via arrangement which reduces emitter finger width, and is particularly suitable for use with compound semiconductor-based devices. Each emitter finger includes a cross-shaped metal contact which provides an emitter contact; each contact comprises two perpendicular arms which intersect at a central area. A via through an interlevel dielectric layer provides access to the emitter contact; the via is square-shaped, centered over the center point of the central area, and oriented at a 45° angle to the arms. This allows the via size to be equal to or greater than the minimum process dimension, while allowing the width of the emitter finger to be as narrow as possible with the alignment tolerances still being met.
摘要翻译： BJT器件配置包括发射极指和通孔布置，其减少发射极指宽度，并且特别适用于基于化合物半导体的器件。每个发射器指状物包括提供发射体接触的十字形金属触点; 每个接触件包括在中心区域相交的两个垂直臂。通过层间介质层的通孔提供对发射极接触的访问; 通孔是方形的，居中于中心区域的中心点，并且与臂成45°角定向。这允许通孔尺寸等于或大于最小处理尺寸，同时允许发射器指状物的宽度尽可能窄，并且仍然满足对准公差。

24. 发明授权

US06762661B1 Shutter switch for millimeter wave beams and method for switching 有权
标题翻译：用于毫米波束的快门开关和切换方法
公开(公告)号：US06762661B1
公开(公告)日：2004-07-13
申请号：US09675696
申请日：2000-09-29
申请人： John A. Higgins
发明人： John A. Higgins
IPC分类号： H01P110
CPC分类号： H01Q15/00
摘要： A shutter switch is disclosed the is placed in the path of a millimeter beam and is either opaque or transparent to the beam. The shutter switch comprises a number of waveguides placed adjacent to one another to intercept the beam, a portion of the beam passing through each waveguide. The dimensions of each waveguide are such that transmission of the respective portion of the beam would be cut-off if the all of the waveguide walls were conductive. However, the waveguides have high impedance structures on at least two of their opposing interior walls that allow the beam at the design frequency to be transmitted through the waveguide with uniform density and minimal attenuation. At this design frequency the shutter switch to be essentially transparent to the beam. The high impedance structures can also be changed to a conductive surfaces such that all of the waveguides walls appear conductive and the waveguide takes on the characteristics of a metal rectangular waveguide. In this state transmission through each waveguide is cut-off and the shutter switch blocks transmission of the beam. The shutter switch can change states from blocking to transparent in microseconds or less while consuming very little power.
摘要翻译：公开了一种快门开关，其被放置在毫米波束的路径中，并且对于波束是不透明的或透明的。快门开关包括彼此相邻放置的多个波导，以拦截光束，光束的一部分通过每个波导。每个波导的尺寸使得如果所有波导壁都是导电的，则波束的相应部分的传输将被切断。然而，波导在其相对的内壁中的至少两个上具有高阻抗结构，允许以设计频率的光束以均匀的密度和最小的衰减传输通过波导。在这种设计频率下，快门开关对光束基本上是透明的。高阻抗结构也可以改变为导电表面，使得所有的波导壁看起来都是导电的，并且波导具有金属矩形波导的特性。在这种状态下，通过每个波导的传输被切断，并且快门开关阻止光束的传输。快门开关可以在几秒或更少的时间内将状态从阻塞改变为透明，同时消耗很少的功率。

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