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    • 26. 发明授权
    • Structured light imaging system
    • 结构光成像系统
    • US09083905B2
    • 2015-07-14
    • US13353593
    • 2012-01-19
    • Chung Chun WanXiangli LiGennadiy Agranov
    • Chung Chun WanXiangli LiGennadiy Agranov
    • H04N5/235H04N9/73G03B7/00H04N5/3745G01S17/10G01S17/89
    • H04N13/296G01S17/10G01S17/89H04N5/2354H04N5/37452H04N5/378H04N13/254
    • Structured light imaging method and systems are described. An imaging method generates a stream of light pulses, converts the stream after reflection by a scene to charge, stores charge converted during the light pulses to a first storage element, and stores charge converted between light pulses to a second storage element. A structured light image system includes an illumination source that generates a stream of light pulses and an image sensor. The image sensor includes a photodiode, first and second storage elements, first and second switches, and a controller that synchronizes the image sensor to the illumination source and actuates the first and second switches to couple the first storage element to the photodiode to store charge converted during the light pulses and to couple the second storage element to the photodiode to store charge converted between the light pulses.
    • 描述了结构光成像方法和系统。 成像方法产生光脉冲流,通过场景反射后的流转换为电荷,将在光脉冲期间转换的电荷存储到第一存储元件,并将在光脉冲之间转换的电荷存储到第二存储元件。 结构化光图像系统包括产生光脉冲流的照明源和图像传感器。 图像传感器包括光电二极管,第一和第二存储元件,第一和第二开关以及使图像传感器与照明源同步并且致动第一和第二开关以将第一存储元件耦合到光电二极管以存储电荷转换的控制器 并且将第二存储元件耦合到光电二极管以存储在光脉冲之间转换的电荷。
    • 28. 发明授权
    • CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing
    • 具有全局快门,滚动快门和可变转换增益的CMOS图像传感器,具有使用耦合到单个光电二极管的多个BCMD晶体管的像素和用于电荷存储和感测的双栅极BCMD晶体管
    • US08928792B1
    • 2015-01-06
    • US13153369
    • 2011-06-03
    • Jaroslav HynecekGennadiy AgranovXiangli LiHirofumi KomoriXia ZhaoChung Chun Wan
    • Jaroslav HynecekGennadiy AgranovXiangli LiHirofumi KomoriXia ZhaoChung Chun Wan
    • H04N5/335H04N5/359H04N5/3745
    • H01L27/14612H01L27/14605H01L27/14614H01L27/14645H01L27/14656H01L27/14679H04N5/3591H04N5/3745
    • The invention describes a solid-state CMOS image sensor array and discloses image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for a single photodiode, for charge storage and sensing. Thus, the valuable pixel area saved by employing the BCMD transistor for charge storage and sensing is used by placing several BCMD transistors coupled to one photodiode. This increases the Dynamic Range (DR) of the sensor, since the same photodiode can integrate charge for different integration times, both long and short. This allows sensing of two different image signals from a single pixel without saturation, a low level signal with long integration time followed by a high level signal with short integration time. The signal processing circuits located at the periphery of the array can then process these signals into a single Wide Dynamic Range (WDR) output. Further disclosed is an image sensor array with pixels that use BCMD transistors for charge storage and sensing having multiple concentric gates, which allows changing the conversion gain of the BCMD transistors by applying various biases to the gates. Variable conversion gain is a useful feature when building WDR sensors since low conversion gain and high well capacity allows detection of high level signals and the same structure can be used to detect, at the same time, low level signals with high conversion gain and thus low noise.
    • 本发明描述了一种固态CMOS图像传感器阵列,并公开了具有全局和滚动快门功能的图像传感器阵列像素,其利用用于单个光电二极管的多个BCMD晶体管用于电荷存储和感测。 因此,通过使用耦合到一个光电二极管的几个BCMD晶体管来使用通过使用用于电荷存储和感测的BCMD晶体管节省的有价值的像素区域。 这增加了传感器的动态范围(DR),因为相同的光电二极管可以集成不同集成时间的电荷,包括长和短。 这允许感测来自不饱和的单个像素的两个不同图像信号,具有长积分时间的低电平信号,随后是具有短积分时间的高电平信号。 位于阵列外围的信号处理电路然后可以将这些信号处理成单个宽动态范围(WDR)输出。 进一步公开的是具有使用BCMD晶体管的像素的图像传感器阵列,用于具有多个同心门的电荷存储和感测,这允许通过向栅极应用各种偏压来改变BCMD晶体管的转换增益。 可变转换增益是构建WDR传感器的有用特征,因为低转换增益和高容量能够允许检测高电平信号,并且可以使用相同的结构同时检测具有高转换增益的低电平信号,从而低 噪声。
    • 29. 发明授权
    • Imaging systems with color filter barriers
    • 具有滤光屏障的成像系统
    • US08878969B2
    • 2014-11-04
    • US13550539
    • 2012-07-16
    • Richard HolscherGennadiy AgranovDongqing Cao
    • Richard HolscherGennadiy AgranovDongqing Cao
    • H04N3/14H04N5/335H04N9/04H04N9/083H01L27/146
    • H01L27/14629H01L27/14621H01L27/14623
    • An image sensor may be provided in which a pixel array includes imaging pixels and application-specific pixels. The application-specific pixels may include depth-sensing pixels, infrared imaging pixels, or other types of application-specific pixels. A color filter array may be formed over the pixel array. The color filter array may include Bayer color filter array formed over the imaging pixels. The color filter array may also include a plurality of green color filter elements formed over the application-specific pixels. Barrier structures may be interposed between imaging pixels and application-specific pixels. The barrier structures may be configured to reduce or eliminate optical crosstalk between imaging pixels and adjacent application-specific pixels. The barrier structures may include an opaque photodefinable material such as black or blue photodefinable material that may be configured to filter out wavelength bands of interest. The barrier structures may be formed during the color filter array fabrication process.
    • 可以提供图像传感器,其中像素阵列包括成像像素和应用特定像素。 应用特定像素可以包括深度感测像素,红外成像像素或其他类型的应用特定像素。 可以在像素阵列上形成滤色器阵列。 滤色器阵列可以包括形成在成像像素上的拜耳滤色器阵列。 滤色器阵列还可以包括形成在应用特定像素上的多个绿色滤色器元件。 屏障结构可以介于成像像素和应用特定像素之间。 阻挡结构可以被配置为减少或消除成像像素和相邻应用特定像素之间的光学串扰。 阻挡结构可以包括不透明的可光限定材料,例如黑色或蓝色可光限定材料,其可以被配置为滤出感兴趣的波长带。 屏障结构可以在滤色器阵列制造过程中形成。