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    • 21. 发明授权
    • Low noise mixer
    • 低噪音混音器
    • US07398073B2
    • 2008-07-08
    • US11220030
    • 2005-09-06
    • Rajasekhar PullelaTirdad SowlatiDmitriy Rozenblit
    • Rajasekhar PullelaTirdad SowlatiDmitriy Rozenblit
    • H04B1/26
    • H04B1/28H03D7/1433H03D7/1441H03D7/1458H03D7/1466H03D7/165H03D2200/0019H03D2200/0084
    • A low noise mixer comprises a first mixer core configured to receive a radio frequency (RF) input signal having an RF frequency, and a first local oscillator signal, wherein the first local oscillator signal is at a frequency that is nominally twice the frequency of the RF frequency, the first mixer core configured to switch the RF input signal to at least one secondary mixer core at a frequency that coincides with the frequency of the first local oscillator signal, the at least one secondary mixer core configured to receive the switched RF input signal and a second local oscillator signal, where the second local oscillator signal is at the same nominal frequency as the RF input signal, and wherein switching the RF input signal at the frequency of the first local oscillator signal substantially eliminates flicker noise associated with the down-conversion process.
    • 低噪声混频器包括被配置为接收具有RF频率的射频(RF)输入信号和第一本地振荡器信号的第一混频器核心,其中第一本地振荡器信号的频率是标称频率为 RF频率,所述第一混频器核心被配置为以与所述第一本机振荡器信号的频率一致的频率将所述RF输入信号切换到至少一个辅助混频器内核,所述至少一个辅助混频器核心被配置为接收所述切换的RF输入 信号和第二本地振荡器信号,其中第二本机振荡器信号处于与RF输入信号相同的标称频率,并且其中以第一本地振荡器信号的频率切换RF输入信号基本上消除与下降相关联的闪烁噪声 转换过程。
    • 26. 发明授权
    • High-frequency integrated transistor module
    • 高频集成晶体管模块
    • US06593797B1
    • 2003-07-15
    • US10174317
    • 2002-06-18
    • Tirdad Sowlati
    • Tirdad Sowlati
    • H03K1760
    • H03F3/19H01L2924/0002H03F3/211H03F2203/21178H01L2924/00
    • A high-frequency integrated transistor module includes a bipolar transistor having at least one emitter finger, which is internally connected in series with a resistor to provide a DC current path for the circuit, and is internally connected in series with a capacitor to provide an RF current path for the module separate from the DC current path. The capacitor may be coupled to an RF ground connection, and the value of the capacitor may be selected to resonate with the value of the RF ground connection inductance in order to provide gain enhancement at a selected operating frequency range. In order to provide gain enhancement over a broader frequency bandwidth, two or more emitter fingers can be connected in series with respective capacitors of different values in order to provide at least two RF current paths having different resonant frequencies.
    • 高频集成晶体管模块包括具有至少一个发射极指的双极晶体管,其内部与电阻器串联连接以提供用于电路的DC电流通路,并且与电容器串联连接以提供RF 模块的电流路径与直流电流路径分开。 电容器可以耦合到RF接地连接,并且可以选择电容器的值以与RF接地连接电感的值谐振,以便在选定的工作频率范围内提供增益。 为了在更宽的频率带宽上提供增益增益,可以将两个或多个发射极指与串联不同值的相应电容器串联,以便提供具有不同谐振频率的至少两个RF电流路径。
    • 27. 发明授权
    • Bootstrapped dual-gate class E amplifier circuit
    • 自举双门级E放大器电路
    • US06498533B1
    • 2002-12-24
    • US09671911
    • 2000-09-28
    • Tirdad Sowlati
    • Tirdad Sowlati
    • H03F122
    • H03K17/102H03F1/223H03F3/2176
    • A bootstrapped dual-gate Class E amplifier circuit includes a first MOSFET and a second MOSFET connected in series and coupled between a dc voltage source terminal and a common terminal. An rf input signal terminal is coupled to a gate electrode of the first MOSFET and a dc control voltage terminal is coupled to a gate electrode of the second MOSFET, with a unidirectionally-conducting element such as a diode-connected MOSFET being coupled between a drain electrode and the gate electrode of the second MOSFET. The output of the amplifier circuit is taken from the drain electrode of the second MOSFET. This circuit configuration permits the first and second MOSFETs to withstand a larger output voltage swing, thus permitting the use of a higher supply voltage and resulting in a substantially increased maximum output power capability for a given load value.
    • 自举双栅E类放大器电路包括串联连接并耦合在直流电压源端子和公共端子之间的第一MOSFET和第二MOSFET。 RF输入信号端子耦合到第一MOSFET的栅电极,并且直流控制电压端子耦合到第二MOSFET的栅电极,其中单向导电元件例如二极管连接的MOSFET耦合在漏极 电极和第二MOSFET的栅电极。 放大器电路的输出取自第二MOSFET的漏电极。 该电路配置允许第一和第二MOSFET承受更大的输出电压摆幅,从而允许使用更高的电源电压,并且对于给定的负载值,导致基本上增加的最大输出功率能力。
    • 28. 发明授权
    • Dynamic bias boosting circuit for a power amplifier
    • 功率放大器的动态偏置升压电路
    • US06300837B1
    • 2001-10-09
    • US09536946
    • 2000-03-28
    • Tirdad SowlatiSifen Luo
    • Tirdad SowlatiSifen Luo
    • H03F326
    • H03F1/0261
    • A power amplifier circuit includes an amplifying transistor and a dc bias circuit for biasing the amplifier transistor to obtain a conduction angle of at least about 180°. The dc bias circuit includes a dynamic bias boosting circuit for increasing the dc bias current provided to the amplifying transistor by the dc bias circuit in direct proportion to an increase in the input signal provided to the power amplifier. The bias boosting circuit permits the power amplifier circuits to operate in Class B or Class AB with improved power output characteristics and reduced power dissipation at low power levels.
    • 功率放大器电路包括放大晶体管和用于偏置放大器晶体管以获得至少约180°的导通角的直流偏置电路。 直流偏置电路包括动态偏置升压电路,用于通过直流偏置电路与提供给功率放大器的输入信号的增加成正比地增加提供给放大晶体管的直流偏置电流。 偏置升压电路允许功率放大器电路在B类或AB类中工作,具有改善的功率输出特性,并在低功率水平下降低功耗。