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    • 22. 发明授权
    • Liquid crystal display panel and manufacturing method thereof
    • 液晶显示面板及其制造方法
    • US08488072B2
    • 2013-07-16
    • US12418052
    • 2009-04-03
    • Hiroshi OkumuraSetsuo Kaneko
    • Hiroshi OkumuraSetsuo Kaneko
    • G02F1/1335G02F1/1337G02F1/1339H01L21/00
    • G02F1/133526G02B3/0012G02B3/005G02B27/2214
    • To provide a structure and a manufacturing method which can manufacture, at a low cost and with good yield, a liquid crystal display panel having a lenticular lens and a substrate formed in a unified manner. When forming a lenticular lens onto a mother CF substrate by using a wet etching method, substrates are dipped into an etching solution while being raised up in such a manner that the length direction of slit openings of a mask is aligned with a vertical direction and an area having no mask pattern comes on a bottom side. With this, the residuals generated due to glass impurities can be drained towards the lower side along the lenticular lens shape to be discharged to the flat area, which makes it possible to suppress deterioration in the etching processed shape.
    • 为了提供能够以低成本,高成品率制造具有双凸透镜的液晶显示面板和以统一的方式形成的基板的结构和制造方法。 当通过使用湿式蚀刻方法将母体CF基板形成双凸透镜时,将衬底浸入蚀刻溶液中,同时以使得掩模的狭缝开口的长度方向与垂直方向对准的方式升高,并且 没有掩模图案的区域在底面。 由此,由玻璃杂质产生的残留物可以沿着双凸透镜形状向下侧排出,以排出到平坦区域,这样可以抑制蚀刻加工形状的劣化。
    • 26. 发明授权
    • Automobile roof structure
    • 汽车屋顶结构
    • US08210602B2
    • 2012-07-03
    • US12672828
    • 2008-10-30
    • Masaya KobayashiHiroshi OkumuraYasunari Sakai
    • Masaya KobayashiHiroshi OkumuraYasunari Sakai
    • B62D25/04
    • B62D25/06B62D21/157
    • An automobile roof structure in which each end of the roof reinforcement member is connected to a roof side rail via a bracket, the base end of the bracket is fixed to the end of the roof reinforcement member, a base plate of the bracket has upstanding sections that extend to a head edge of the base plate, the upper end of an upstanding end edge of each upstanding section abuts the upper end of a vehicle interior side-surface of the roof side rail, a gap is provided between the lower portion of the upstanding end edge and the side surface. A rotational moment M that is induced in the roof side rail by a collision load acting from the center pillar is not transmitted to the roof reinforcement member 4.
    • 一种汽车屋顶结构,其中屋顶加强构件的每个端部经由支架连接到车顶侧轨道,支架的基端固定到车顶加强构件的端部,支架的底板具有直立段 其延伸到基板的头部边缘,每个直立部分的直立端边缘的上端邻接车顶侧轨道的车辆内侧面的上端, 直立端边和侧面。 通过从中心柱作用的碰撞载荷在屋顶侧轨中感应的旋转力矩M不会传递到屋顶加强构件4。
    • 27. 发明申请
    • AUTOMOBILE ROOF STRUCTURE
    • 汽车屋顶结构
    • US20110121614A1
    • 2011-05-26
    • US12672828
    • 2008-10-30
    • Masaya KobayashiHiroshi OkumuraYasunari Sakai
    • Masaya KobayashiHiroshi OkumuraYasunari Sakai
    • B62D25/06
    • B62D25/06B62D21/157
    • An automobile roof structure in which each end of the roof reinforcement member is connected to a roof side rail via a bracket, the base end of the bracket is fixed to the end of the roof reinforcement member, a base plate of the bracket has upstanding sections that extend to a head edge of the base plate, the upper end of an upstanding end edge of each upstanding section abuts the upper end of a vehicle interior side-surface of the roof side rail, a gap is provided between the lower portion of the upstanding end edge and the side surface. A rotational moment M that is induced in the roof side rail by a collision load acting from the center pillar is not transmitted to the roof reinforcement member 4.
    • 一种汽车屋顶结构,其中屋顶加强构件的每个端部经由支架连接到车顶侧轨道,支架的基端固定到车顶加强构件的端部,支架的底板具有直立段 其延伸到基板的头部边缘,每个直立部分的直立端边缘的上端邻接车顶侧轨道的车辆内侧面的上端, 直立端边和侧面。 通过从中心柱作用的碰撞载荷在屋顶侧轨中感应的旋转力矩M不会传递到屋顶加强构件4。
    • 29. 发明授权
    • Thin film transistor substrate and method for manufacturing the same
    • 薄膜晶体管基板及其制造方法
    • US07709904B2
    • 2010-05-04
    • US10773333
    • 2004-02-09
    • Hiroshi Okumura
    • Hiroshi Okumura
    • H01L29/786
    • H01L29/42384H01L27/1237H01L27/124H01L29/78624H01L29/78645
    • A thin film transistor substrate is provided including a first thin film transistor and a second thin film transistor. The first thin film transistor comprises a first active layer, a first gate insulating film, and a first gate electrode. The second thin film transistor comprises a second active layer formed, a second gate insulating film, and a second gate electrode. A thickness of the second gate insulating film is larger than a thickness of the first gate insulating film, the second active layer has at least two impurity doping regions which overlap the second gate electrode, the first active layer has at least two impurity doping regions formed in a self-aligning manner with respect to the first gate electrode, and the second gate electrode comprises a semiconductor layer.
    • 提供了包括第一薄膜晶体管和第二薄膜晶体管的薄膜晶体管基板。 第一薄膜晶体管包括第一有源层,第一栅极绝缘膜和第一栅电极。 第二薄膜晶体管包括形成的第二有源层,第二栅极绝缘膜和第二栅电极。 第二栅极绝缘膜的厚度大于第一栅极绝缘膜的厚度,第二有源层具有与第二栅极重叠的至少两个杂质掺杂区域,第一有源层具有形成至少两个杂质掺杂区域 以相对于第一栅电极的自对准方式,并且第二栅电极包括半导体层。