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21. 发明授权

US06648711B1 Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter 失效
标题翻译：具有碳纳米管膜的场致发射体，其制造方法以及使用场致发射体的场致发射显示装置
公开(公告)号：US06648711B1
公开(公告)日：2003-11-18
申请号：US09592257
申请日：2000-06-12
申请人： Jin Jang , Suk-jae Chung , Sung-hoon Lim , Jae-eun Yoo
发明人： Jin Jang , Suk-jae Chung , Sung-hoon Lim , Jae-eun Yoo
IPC分类号： H01J904
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J31/127 , Y10S977/721 , Y10S977/723 , Y10S977/742 , Y10S977/843 , Y10S977/844 , Y10S977/888
摘要： A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.
摘要翻译：提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体，其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。形成在所述绝缘基板上的薄膜晶体管，所述薄膜晶体管具有半导体层，源极，漏极和栅电极，以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元晶体管薄膜晶体管可以是共面型晶体管，交错型晶体管或反交错型晶体管。与碳纳米管膜接触的漏电极的一部分的表面含有催化金属，其为镍或钴等过渡金属。或者，漏电极本身可以由用于碳纳米管生长的催化金属形成。

22. 发明授权

US06451637B1 Method of forming a polycrystalline silicon film 有权
标题翻译：形成多晶硅膜的方法
公开(公告)号：US06451637B1
公开(公告)日：2002-09-17
申请号：US09493201
申请日：2000-01-28
申请人： Jin Jang , Sung-Hoon Kim
发明人： Jin Jang , Sung-Hoon Kim
IPC分类号： H01L2100
CPC分类号： C30B1/023 , C30B29/06
摘要： The present invention related to a method of forming a polycrystalline silicon film which forms a polysilicon film by crystallizing silicon by means of carrying out plasma exposure and applying an electric field thereon. The present invention includes the steps of forming a metal plasma exposure layer on a substrate wherein the metal plasma exposure layer works as a catalyst for metal induced crystallization, and depositing amorphous silicon on the substrate on which the plasma exposure layer is formed while an electric field is applied thereon. The present invention enables to crystallize the whole film in such a short annealing time less than 10 minutes by forming a metal layer under a silicon layer by plasma particle exposure and, successively, by crystallizing silicon which is being formed under 520° C. And, the present invention reduces metal contamination in the crystallized silicon film as the amount of metal is easy to be controlled by plasma exposure time. Moreover, the present invention enables to form a polysilicon film several &mgr;m thick as it is easy to form polysilicon of which thickness does not matter.
摘要翻译：本发明涉及通过进行等离子体曝光和在其上施加电场而使硅结晶而形成多晶硅膜的多晶硅膜的形成方法。本发明包括在基板上形成金属等离子体曝光层的步骤，其中金属等离子体曝光层用作金属诱导结晶的催化剂，并在其上形成等离子体曝光层的基板上沉积非晶硅，同时电场施加在其上。本发明能够通过在等离子体颗粒曝光下在硅层下形成金属层，并且通过在520℃下形成硅来结晶在短的退火时间，使其在短于10分钟的短时间内使整个膜结晶。本发明通过等离子体曝光时间容易地控制金属的量来减少结晶硅膜中的金属污染。此外，本发明能够形成几个厚度的多晶硅膜，因为容易形成厚度无关的多晶硅。

23. 发明授权

US06326226B1 Method of crystallizing an amorphous film 失效
标题翻译：使非晶膜结晶的方法
公开(公告)号：US06326226B1
公开(公告)日：2001-12-04
申请号：US09115498
申请日：1998-07-14
申请人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
发明人： Jin Jang , Soo-Young Yoon , Jae-Young Oh
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.
摘要翻译：结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。

24. 发明授权

US06312979B1 Method of crystallizing an amorphous silicon layer 有权
标题翻译：使非晶硅层结晶的方法
公开(公告)号：US06312979B1
公开(公告)日：2001-11-06
申请号：US09299571
申请日：1999-04-27
申请人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
发明人： Jin Jang , Soo Young Yoon , Hyun Churl Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited. In another aspect, the present invention includes the steps of forming a crystallizing-induced substance on an amorphous silicon layer wherein the crystallizing-induced substance has predetermined density on an unit area of the amorphous silicon layer, and treating thermally the amorphous silicon layer on which the crystallizing-induced substance is formed.
摘要翻译：本发明涉及一种结晶非晶硅层的方法，该方法是通过在非晶硅层上沉淀结晶诱导物质而进行的，该结晶诱导物质通过金属诱导结晶使非晶硅层结晶，结晶硅的速度增加，金属污染通过MIC减少。本发明包括以下步骤：在非晶硅层上沉积用于结晶硅的诱导物质的结晶诱导层，其中结晶诱导层形成为厚度为0.03埃，并且将非晶硅层热处理结晶被沉积。另一方面，本发明包括以下步骤：在非晶硅层上形成结晶诱发物质，其中结晶诱发物质在非晶硅层的单位面积上具有预定的密度，并对其上的非晶硅层进行热处理形成结晶诱发物质。

25. 发明授权

US6037611A Thin film transistor and its fabrication 失效
标题翻译：薄膜晶体管及其制造
公开(公告)号：US6037611A
公开(公告)日：2000-03-14
申请号：US980311
申请日：1997-11-28
申请人： Jin Jang , Kyung-Ha Lee
发明人： Jin Jang , Kyung-Ha Lee
IPC分类号： H01L27/12 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a gate electrode on the metal layer; etching the metal layer and the insulating layer by using the photoresist pattern as a mask, and respectively forming a gate electrode and a gate insulating layer to expose a part of the active layer; forming an amorphous silicon layer on the resultant whole surface of the substrate; forming a second metal layer on the amorphous silicon layer; patterning the second metal layer and the amorphous silicon layer by a photolithographic process to form an offset layer and a source/drain electrode; and carrying out a lift-off process to remove the photoresist pattern, and exposing the surface on the gate electrode.
摘要翻译：制造薄膜晶体管的方法包括在绝缘基板上形成有源层的步骤; 在所述有源层上形成绝缘层和第一金属层; 形成用于在所述金属层上形成栅电极的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为掩模蚀刻金属层和绝缘层，并分别形成栅极电极和栅极绝缘层以暴露活性层的一部分; 在所得基板的整个表面上形成非晶硅层; 在所述非晶硅层上形成第二金属层; 通过光刻工艺图案化第二金属层和非晶硅层以形成偏移层和源极/漏极; 并进行剥离处理以除去光致抗蚀剂图案，并使栅电极上的表面露出。

26. 发明授权

US08172633B2 Field emission display and manufacturing method of the same having selective array of electron emission source 有权
标题翻译：具有电子发射源的选择性阵列的场发射显示及其制造方法
公开(公告)号：US08172633B2
公开(公告)日：2012-05-08
申请号：US12295943
申请日：2007-04-04
申请人： Kyu Chang Park , Jin Jang , Je Hwang Ryu
发明人： Kyu Chang Park , Jin Jang , Je Hwang Ryu
IPC分类号： H01J9/04
CPC分类号： H01J9/025 , B82Y10/00 , H01J31/127 , H01J2201/30469
摘要： The present invention relates to a field emission display and a manufacturing method of the same having selective positioning of electron field emitters. More specifically, the present invention provides a field emission display and a manufacturing method of the same having selective positioning of electron field emitters which can prevent a cross-talk that is a mutual interference phenomenon between pixels and improve uniformity of pixels based on uniform electron emission by deciding positions of carbon nano-tubes which are sources of electron emission and growing carbon nano-tubes before the structure of electrodes is formed, and forming spacers directly on electrodes such that the spacers divide carbon nano-tubes formed uniformly and selectively into pixel units.
摘要翻译：本发明涉及具有电子场发射器的选择性定位的场致发射显示器及其制造方法。更具体地说，本发明提供了具有选择性定位电子场发射体的场致发射显示器及其制造方法，其可以防止作为像素之间的相互干扰现象的串扰，并且基于均匀的电子发射来改善像素的均匀性通过在形成电极结构之前确定作为电子发射源和生长碳纳米管的碳纳米管的位置，并且直接在电极上形成间隔物，使得间隔物将均匀且有选择地形成的碳纳米管分成像素单元。

27. 发明申请

US20110223748A1 METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL 审中-公开
标题翻译：非晶材料相转移方法
公开(公告)号：US20110223748A1
公开(公告)日：2011-09-15
申请号：US13063182
申请日：2009-05-19
申请人： Jin Jang , Jae-Hwan Oh , Dong-Han Kang , Jun-Hyuk Cheon
发明人： Jin Jang , Jae-Hwan Oh , Dong-Han Kang , Jun-Hyuk Cheon
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277
摘要： Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.
摘要翻译：本文公开了一种使用于制造薄膜晶体管的非晶材料的结晶方法。该方法包括在衬底上形成非晶硅层，在非晶硅层的一部分上沉积Ni金属层，并对非晶硅层进行热处理以引起非晶硅的相变，其中Ni金属层被沉积到平均厚度为0.79以下。该方法可以使用金属诱导横向结晶在薄膜晶体管中使用非晶材料，同时限制Ni的厚度和密度，从而最小化薄膜晶体管中的电流泄漏。

28. 发明授权

US07944415B2 Organic light emitting diode display device and a driving method thereof 有权
标题翻译：有机发光二极管显示装置及其驱动方法
公开(公告)号：US07944415B2
公开(公告)日：2011-05-17
申请号：US11396925
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0262 , G09G2320/043 , G09G2320/045 , G09G2360/145 , G09G2360/148
摘要： Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.
摘要翻译：公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

29. 发明授权

US07675018B2 Circuit and method for driving organic light emitting diode 有权
标题翻译：用于驱动有机发光二极管的电路和方法
公开(公告)号：US07675018B2
公开(公告)日：2010-03-09
申请号：US11662605
申请日：2004-09-15
申请人： Jin Jang , Joon-Chul Goh
发明人： Jin Jang , Joon-Chul Goh
IPC分类号： H01J40/14
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.
摘要翻译：用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。

30. 发明授权

US07618852B2 Phase transition method of amorphous material using cap layer 有权
标题翻译：使用盖层的非晶材料的相变方法
公开(公告)号：US07618852B2
公开(公告)日：2009-11-17
申请号：US10533998
申请日：2003-11-06
申请人： Jin Jang , Jonghyun Choi , Do-Young Kim , Byoung-Kwon Choo
发明人： Jin Jang , Jonghyun Choi , Do-Young Kim , Byoung-Kwon Choo
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02672 , H01L21/268
摘要： The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.
摘要翻译：本发明提供一种非晶材料的相变方法，包括以下步骤：将非晶材料沉积在电介质基片上; 在所述非晶材料上形成盖层; 在所述盖层上沉积金属; 并使非晶材料结晶。根据本发明，无定形材料的表面被盖层保护，从而可以获得清洁的表面，并且在热处理和样品处理期间可以显着降低表面的粗糙度。此外，盖层设置在非晶材料和金属之间以使金属扩散，从而可以显着降低由于金属和非晶材料在常规方法中的直接接触引起的金属污染。

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