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21. 发明申请

US20070247924A1 Methods for erasing memory devices and multi-level programming memory device 审中-公开
标题翻译：擦除存储器件和多级编程存储器件的方法
公开(公告)号：US20070247924A1
公开(公告)日：2007-10-25
申请号：US11399158
申请日：2006-04-06
申请人： Wei Zheng , Meng Ding
发明人： Wei Zheng , Meng Ding
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C16/14 , G11C16/0458 , G11C16/0475 , H01L29/7887 , H01L29/7923
摘要： A memory includes a first charge storage region spaced apart from a second charge storage region by an isolation region. Techniques for erasing a memory are provided in which electrons are Fowler-Nordheim (FN) tunneled out of at least one of the charge storage regions into a substrate to erase the at least one charge storage region of the memory. Other techniques are provided for programming a single charge storage region at multiple different levels or states.
摘要翻译：存储器包括通过隔离区域与第二电荷存储区域间隔开的第一电荷存储区域。提供了用于擦除存储器的技术，其中电子是Fowler-Nordheim（FN）从电荷存储区域中的至少一个隧道化到衬底中以擦除存储器的至少一个电荷存储区域。提供了用于在多个不同级别或状态下编程单个电荷存储区域的其它技术。

22. 发明申请

US20070247923A1 Methods for erasing and programming memory devices 有权
标题翻译：擦除和编程存储器件的方法
公开(公告)号：US20070247923A1
公开(公告)日：2007-10-25
申请号：US11399130
申请日：2006-04-05
申请人： Meng Ding , Zhizheng Liu , Wei Zheng
发明人： Meng Ding , Zhizheng Liu , Wei Zheng
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： H01L29/7923 , G11C16/0475 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： A dual-bit memory device includes a first charge storage region spaced apart from a second charge storage region by an isolation region. Techniques for erasing a memory can be provided in which electrons can be injected into the charge storage regions to erase the charge storage regions. Other techniques for programming a memory can be provided in which holes can be injected into at least one of the charge storage regions to program the charge storage regions.
摘要翻译：双位存储器件包括通过隔离区域与第二电荷存储区域间隔开的第一电荷存储区域。可以提供用于擦除存储器的技术，其中电子可以被注入到电荷存储区域中以擦除电荷存储区域。可以提供用于编程存储器的其它技术，其中可以将空穴注入到至少一个电荷存储区域中以对电荷存储区域进行编程。

23. 发明授权

US07268140B2 Piperazine derivatives and their use as anti-inflammatory agents 失效
标题翻译：哌嗪衍生物及其作为抗炎剂的用途
公开(公告)号：US07268140B2
公开(公告)日：2007-09-11
申请号：US11248618
申请日：2005-10-13
申请人： John G. Bauman , Brad O. Buckman , Ameen F. Ghannam , Joseph E. Hesselgesser , Richard Horuk , Imadul Islam , Meina Liang , Karen B. May , Sean D. Monahan , Michael M. Morrissey , Howard P. Ng , Kenneth J. Shaw , Guo Ping Wei , Wei Xu , Zuchun Zhao , Wei Zheng
发明人： John G. Bauman , Brad O. Buckman , Ameen F. Ghannam , Joseph E. Hesselgesser , Richard Horuk , Imadul Islam , Meina Liang , Karen B. May , Sean D. Monahan , Michael M. Morrissey , Howard P. Ng , Kenneth J. Shaw , Guo Ping Wei , Wei Xu , Zuchun Zhao , Wei Zheng
IPC分类号： A61K31/4965 , C07D241/04
CPC分类号： C07D295/185 , C07D215/18 , C07D241/04 , C07D241/38 , C07D261/14 , C07D295/192 , C07D307/52 , C07D403/06 , C07D403/12 , C07D405/12 , C07D413/12
摘要： This invention is directed to acyl piperazine derivatives which are useful as anti-inflammatory agents. This invention is also directed to pharmaceutical compositions containing the compounds of the invention, and methods of using the compounds to treat inflammatory disorders in humans.
摘要翻译：本发明涉及可用作抗炎剂的酰基哌嗪衍生物。本发明还涉及含有本发明化合物的药物组合物，以及使用该化合物治疗人类炎性疾病的方法。

24. 发明申请

US20070205455A1 Flash memory cells having trenched storage elements 有权
标题翻译：具有沟槽存储元件的闪存单元
公开(公告)号：US20070205455A1
公开(公告)日：2007-09-06
申请号：US11702846
申请日：2007-02-05
申请人： Wei Zheng , Chi Chang , Unsoon Kim
发明人： Wei Zheng , Chi Chang , Unsoon Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/792 , H01L21/823418 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/7923
摘要： An embodiment of the present invention is directed to a memory cell. The memory cell includes a first trench formed in a semiconductor substrate and a second trench formed in said semiconductor substrate adjacent to said first trench. The first trench and the second trench each define a first side wall and a second sidewall respectively. The memory cell further includes a first storage element formed on the first sidewall of the first trench and a second storage element formed on the second sidewall of the second trench.
摘要翻译：本发明的实施例涉及存储单元。存储单元包括形成在半导体衬底中的第一沟槽和形成在与所述第一沟槽相邻的所述半导体衬底中的第二沟槽。第一沟槽和第二沟槽分别限定第一侧壁和第二侧壁。存储单元还包括形成在第一沟槽的第一侧壁上的第一存储元件和形成在第二沟槽的第二侧壁上的第二存储元件。

25. 发明申请

US20070016939A1 Extensible access control architecture 有权
标题翻译：可扩展访问控制架构
公开(公告)号：US20070016939A1
公开(公告)日：2007-01-18
申请号：US11177757
申请日：2005-07-08
申请人： Anthony Leibovitz , Mark Schurman , Mudit Goel , Paul Mayfield , Sudhakar Pasupuleti , Taroon Mandhana , Vivek Kamath , Wei Zheng , Xuemei Bao
发明人： Anthony Leibovitz , Mark Schurman , Mudit Goel , Paul Mayfield , Sudhakar Pasupuleti , Taroon Mandhana , Vivek Kamath , Wei Zheng , Xuemei Bao
IPC分类号： H04L9/32
CPC分类号： H04L63/0281 , H04L63/08 , H04L63/105 , H04L63/162 , H04L67/42
摘要： Software for managing access control functions in a network. The software includes a host that receives access control commands or information and calls one or more methods. The methods perform access control functions and communicate access control results or messages to be transmitted. The host may be installed in a network peer seeking access to the network or in a server controlling access to the network. When installed in a peer, the host receives commands and exchanges information with a supplicant. When installed in an access control server, the host receives commands and exchanges information with an authenticator. The host has a flexible architecture that enables multiple features, such as allowing the same methods to be used for authentication by multiple supplicants, providing ready integration of third party access control software, simplifying network maintenance by facilitating upgrades of authenticator software and enabling access control functions other than peer authentication.
摘要翻译：用于管理网络中访问控制功能的软件。该软件包括接收访问控制命令或信息并调用一个或多个方法的主机。该方法执行访问控制功能并传送要发送的访问控制结果或消息。主机可以安装在寻求对网络的访问的网络对等体中，或者在控制对网络的访问的服务器中。当安装在对等体中时，主机接收命令并与请求者交换信息。当安装在访问控制服务器中时，主机接收命令并与验证者交换信息。主机具有灵活的架构，可实现多种功能，例如允许将相同的方法用于多个请求者的身份验证，提供第三方访问控制软件的即时集成，通过促进验证器软件升级和启用访问控制功能简化网络维护除了对等认证。

26. 发明授权

US07161045B1 Process for manufacture of polytrimethylene ether glycol 失效
标题翻译：聚三亚甲基醚二醇的制备方法
公开(公告)号：US07161045B1
公开(公告)日：2007-01-09
申请号：US11204731
申请日：2005-08-16
申请人： Hari Babu Sunkara , Howard C. Ng , Wei Zheng
发明人： Hari Babu Sunkara , Howard C. Ng , Wei Zheng
IPC分类号： C07C43/11 , C08J3/26
CPC分类号： C08G65/48 , C08G65/34
摘要： A process of manufacture of polytrimethylene ether glycol comprising:(a) polycondensing reactant comprising diol selected from the group consisting of 1,3-propanediol, 1,3-propanediol dimer and 1,3-propanediol trimer or mixtures thereof in the presence of acid polycondensation catalyst to form polytrimethylene ether glycol;(b) adding water to the polytrimethylene ether glycol and hydrolyzing the acid esters formed during the polycondensation to form a hydrolyzed mixture containing the polytrimethylene ether glycol and the hydrolyzed acid esters;(c) adding organic solvent that is miscible with water to the hydrolyzed mixture to form an aqueous-organic mixture comprising (i) organic phase containing polytrimethylene ether glycol and residual acid polycondensation catalyst from the polycondensing and (ii) water phase;(d) separating the water phase and the organic phase;(e) adding base to the separated organic phase to neutralize the residual acid polycondensation catalyst by forming salts of the residual acid polycondensation catalyst;(f) separating the organic phase into (i) liquid phase comprising the polytrimethylene ether glycol, the organic solvent and any residual water, and (ii) solid phase comprising the salts of the residual acid polycondensation catalyst and the base which is unreacted; and(g) removing the organic solvent and the residual water from the organic phase to obtain polytrimethylene ether glycol.
摘要翻译：一种制备聚三亚甲基醚二醇的方法，包括：（a）在酸存在下，包含选自1,3-丙二醇，1,3-丙二醇二聚物和1,3-丙二醇三聚物或其混合物的二醇的缩聚反应物缩聚催化剂形成聚三亚甲基醚二醇; （b）向聚三亚甲基醚二醇中加水并水解缩聚过程中形成的酸酯，形成含有聚三亚甲基醚二醇和水解酸酯的水解混合物; （c）将与水混溶的有机溶剂加入到水解混合物中以形成水 - 有机混合物，其包含（i）聚缩聚和（ii）水相中含有聚三亚甲基醚二醇和残余酸缩聚催化剂的有机相; （d）分离水相和有机相; （e）通过形成残余酸缩聚催化剂的盐，将分离的有机相加入碱中和残留的酸缩聚催化剂; （f）将有机相分离成（i）包含聚三亚甲基醚二醇，有机溶剂和任何残留水的液相，和（ii）包含残余酸缩聚催化剂的盐和未反应的碱的固相; 和（g）从有机相中除去有机溶剂和残余水，得到聚三亚甲基醚二醇。

27. 发明申请

US20060091439A1 System and method for protecting semiconductor devices 有权
标题翻译：用于保护半导体器件的系统和方法
公开(公告)号：US20060091439A1
公开(公告)日：2006-05-04
申请号：US10976816
申请日：2004-11-01
申请人： Ihsan Djomehri , Mark Randolph , Yi He , Wei Zheng
发明人： Ihsan Djomehri , Mark Randolph , Yi He , Wei Zheng
IPC分类号： H01L29/94
CPC分类号： H01L27/115 , H01L27/0288
摘要： A semiconductor memory device includes a group of word lines and a structure that is configured to dissipate current from the group of word lines during fabrication of the semiconductor memory device.
摘要翻译：半导体存储器件包括一组字线和被配置成在制造半导体存储器件期间消散来自字线组的电流的结构。

28. 发明授权

US06977258B2 Piperazine derivatives and their use as anti-inflammatory agents 失效
标题翻译：哌嗪衍生物及其作为抗炎剂的用途
公开(公告)号：US06977258B2
公开(公告)日：2005-12-20
申请号：US10347530
申请日：2003-01-17
申请人： John G. Bauman , Brad O. Buckman , Ameen F. Ghannam , Joseph E. Hesselgesser , Richard Horuk , Imadul Islam , Meina Liang , Karen B. May , Sean D. Monahan , Michael M. Morrissey , Howard P. Ng , Kenneth J. Shaw , Guo Ping Wei , Wei Xu , Zuchun Zhao , Wei Zheng
发明人： John G. Bauman , Brad O. Buckman , Ameen F. Ghannam , Joseph E. Hesselgesser , Richard Horuk , Imadul Islam , Meina Liang , Karen B. May , Sean D. Monahan , Michael M. Morrissey , Howard P. Ng , Kenneth J. Shaw , Guo Ping Wei , Wei Xu , Zuchun Zhao , Wei Zheng
IPC分类号： A61K31/4965 , A61K31/497 , A61P29/00 , A61P43/00 , C07D241/04 , C07D261/14 , C07D295/185 , C07D307/52 , C07D401/12 , C07D403/06 , C07D403/12 , C07D405/12 , C07D409/12 , C07D413/12 , A61K31/495
CPC分类号： C07D295/185 , C07D215/18 , C07D241/04 , C07D241/38 , C07D261/14 , C07D295/192 , C07D307/52 , C07D403/06 , C07D403/12 , C07D405/12 , C07D413/12
摘要： This invention is directed to acyl piperazine derivatives of formula (Ia): wherein R1a, R2, R3, R4, R5 and R6 are defined herein, which are useful as anti-inflammatory agents. This invention is also directed to other acyl piperazine derivatives, pharmaceutical compositions containing the compounds of the invention, and methods of using the compounds to treat inflammatory disorders in humans.
摘要翻译：本发明涉及式（Ia）的酰基哌嗪衍生物：其中R 1a，R 2，R 3，R 4，本文定义的R 5和R 6是有用的抗炎剂。本发明还涉及其它酰基哌嗪衍生物，含有本发明化合物的药物组合物，以及使用该化合物治疗人类炎性疾病的方法。

29. 发明授权

US06897110B1 Method of protecting a memory array from charge damage during fabrication 有权
标题翻译：在制造期间保护存储器阵列免受电荷损伤的方法
公开(公告)号：US06897110B1
公开(公告)日：2005-05-24
申请号：US10305750
申请日：2002-11-26
申请人： Yi He , Wei Zheng , Zhizheng Liu , Mark W. Randolph , Darlene G. Hamilton , Ken Tanpairoj
发明人： Yi He , Wei Zheng , Zhizheng Liu , Mark W. Randolph , Darlene G. Hamilton , Ken Tanpairoj
IPC分类号： H01L21/336 , H01L21/4763 , H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a memory array, while protecting it from charge damage. Bitlines that may have source/drain regions of memory cells are formed in a substrate. Wordlines are formed above the bitlines and may have gate regions. Next, a first metal region that is coupled to one of the bitlines is formed above the bitlines. A second metal region that is not electrically coupled to the first metal region is formed. Then, the first metal region is electrically coupled to the second metal region. Charge damage is reduced by keeping the antenna ratio between the first metal region and the bitline low. For further protection, a diode or fuse may also be formed between the substrate and the portion of the metal region that is coupled to the bitline. Also, fuse may be formed between a bitline and a wordline to protect the wordline.
摘要翻译：一种制造存储器阵列的方法，同时保护其免受电荷损坏。可以在衬底中形成可能具有存储器单元的源极/漏极区的位线。字线形成在位线之上，并且可以具有栅极区域。接下来，在位线之上形成耦合到位线之一的第一金属区域。形成不与第一金属区电耦合的第二金属区域。然后，第一金属区域电耦合到第二金属区域。通过保持第一金属区域和位线之间的天线比率降低来减少电荷损坏。为了进一步的保护，还可以在衬底和耦合到位线的金属区域的部分之间形成二极管或保险丝。此外，可以在位线和字线之间形成保险丝，以保护字线。

30. 发明申请

US20050077566A1 Recess channel flash architecture for reduced short channel effect 失效
公开(公告)号：US20050077566A1
公开(公告)日：2005-04-14
申请号：US10683649
申请日：2003-10-10
申请人： Wei Zheng , Mark Randolph
发明人： Wei Zheng , Mark Randolph
IPC分类号： H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42336 , H01L29/7883 , H01L29/792
摘要： A memory cell with reduced short channel effects is described. A source region and a drain region are formed in a semiconductor substrate. A trench region is formed between the source region and the drain region. A recessed channel region is formed below the trench region, the source region and the drain region. A gate dielectric layer is formed in the trench region of the semiconductor substrate above the recessed channel region and between the source region and the drain region. A control gate layer is formed on the semiconductor substrate above the recessed channel region, wherein the control gate layer is separated from the recessed channel region by the gate dielectric layer.

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