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21. 发明授权

US07092420B2 Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount 有权
标题翻译：半导体激光二极管的基座，其制造方法以及使用该基座的半导体激光二极管组件
公开(公告)号：US07092420B2
公开(公告)日：2006-08-15
申请号：US10732241
申请日：2003-12-11
申请人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
发明人： Joon-seop Kwak , Su-hee Chae , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/0206 , H01L33/62 , H01L2924/0002 , H01S5/0207 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/2205 , H01L2924/00
摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
摘要翻译：提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

22. 发明申请

US20050026396A1 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US20050026396A1
公开(公告)日：2005-02-03
申请号：US10928202
申请日：2004-08-30
申请人： Geun-young Yeom , Myung Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyoung-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyoung-nam Kim , Dong-woo Kim
IPC分类号： H01L21/3065 , G03F9/00 , H01B13/00 , H01L21/00 , H01L21/301 , H01L21/302 , H01L21/44 , H01L21/46 , H01L21/78 , H01L33/00
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体构成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当薄化时，使用BCl 3和/或BCl 3 / Cl 2气体，可能具有一些Ar，对衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE）。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

23. 发明授权

US08017421B2 Method of manufacturing semiconductor light emitting device 失效
公开(公告)号：US08017421B2
公开(公告)日：2011-09-13
申请号：US11889126
申请日：2007-08-09
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

24. 发明授权

US07682852B2 Method of manufacturing semiconductor laser device including light shield plate 失效
标题翻译：制造包括遮光板的半导体激光装置的方法
公开(公告)号：US07682852B2
公开(公告)日：2010-03-23
申请号：US11889121
申请日：2007-08-09
申请人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
发明人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0286 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
摘要翻译：提供一种制造具有遮光膜的半导体激光器件的方法，包括：通过在衬底上沉积第一覆盖层，有源层和第二覆盖层来形成发光结构; 在发光结构的发光面上沉积遮光膜和保护膜; 去除与包括第一包层以上的发光结构的发光面的区域相对应的遮光膜; 并去除保护层。

25. 发明授权

US07406111B2 Semiconductor laser diode and method for manufacturing the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US07406111B2
公开(公告)日：2008-07-29
申请号：US11340590
申请日：2006-01-27
申请人： Youn-joon Sung , Tae-hoon Jang
发明人： Youn-joon Sung , Tae-hoon Jang
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.
摘要翻译：在半导体激光二极管中，第一材料层，有源层和第二材料层依次形成在基板上，脊部和第一突出部分在垂直于有源层的方向上形成在第二材料层上所述第一突起部分形成在所述脊部的一侧，形成与所述脊部的顶面接触的第二电极层，在所述第二材料层的整个表面上形成限流层，第二电极层，在第一突起部分上方的电流限制层的表面上形成保护层，并且具有不同于电流限制层的蚀刻选择性，并且在电流限制层上形成接合金属层，与第二电极层电连接的保护层。

26. 发明申请

US20070041413A1 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US20070041413A1
公开(公告)日：2007-02-22
申请号：US11580093
申请日：2006-10-13
申请人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

27. 发明申请

US20110300654A1 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20110300654A1
公开(公告)日：2011-12-08
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L33/36
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

28. 发明申请

US20080123696A1 Semiconductor laser device having scattering portion and method of fabricating the device 审中-公开
标题翻译：具有散射部的半导体激光装置及其制造方法
公开(公告)号：US20080123696A1
公开(公告)日：2008-05-29
申请号：US11898577
申请日：2007-09-13
申请人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
发明人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
IPC分类号： H01S3/10 , H01L21/00
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/2004 , H01S5/3211 , H01S5/32341 , H01S2301/18
摘要： Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such, the semiconductor laser device may emit higher quality laser light.
摘要翻译：本发明提供一种半导体激光装置，其包括基板，发光结构，其包括依次层叠在基板上的第一包层，有源层和第二包层，以及形成在基板的底面上的散射部，以便散光因此，半导体激光装置可以发射更高质量的激光。

29. 发明授权

US07151786B2 Semiconductor laser diode with current restricting layer and fabrication method thereof 失效
标题翻译：具有限流层的半导体激光二极管及其制造方法
公开(公告)号：US07151786B2
公开(公告)日：2006-12-19
申请号：US10456510
申请日：2003-06-09
申请人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
发明人： Joon-seop Kwak , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01S3/19 , H01S5/00
CPC分类号： H01S5/22 , H01S5/2063 , H01S5/32341
摘要： Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.
摘要翻译：提供一种具有电流限制层的半导体激光二极管及其制造方法。半导体激光二极管包括衬底，沉积在衬底上的第一材料层，沉积在第一材料层上并发射激光束的有源层和沉积在有源层上并包括脊的第二材料层从活性层突出的部分和通过将离子注入脊部的周边部分形成的电流限制层，以便限制注入有源层的电流。因此，可以制造具有低共振临界电流值的改进的半导体激光二极管，其可以消除光学轮廓的损失并且减小注入有源层的电流的轮廓宽度，同时保持脊部的宽度。

30. 发明申请

US20060249745A1 Heat dissipating structure and light emitting device having the same 审中-公开
标题翻译：散热结构和具有该散热结构的发光器件
公开(公告)号：US20060249745A1
公开(公告)日：2006-11-09
申请号：US11387864
申请日：2006-03-24
申请人： Su-hee Chae , Tae-hoon Jang , Hyung-kun Kim , Youn-joon Sung
发明人： Su-hee Chae , Tae-hoon Jang , Hyung-kun Kim , Youn-joon Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/647 , B82Y20/00 , H01L33/642 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02492 , H01S5/22 , H01S5/34333
摘要： A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.
摘要翻译：散热结构被倒装贴合到发光元件上并且有利于散热。散热结构包括：面向发光元件并具有至少一个凹槽的基座; 填充到所述至少一个凹槽的至少一部分中的导电材料层; 以及插入在发光元件和用于接合的基座之间的焊料层。散热结构和具有该散热结构的发光装置允许在操作期间有效地散发在发光元件中产生的热量。

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