专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20090323228A1 TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED FERROMAGNETIC UNDERLAYER FOR MgO TUNNELING BARRIER LAYER 有权
标题翻译：用于MgO隧道障碍层的改进的铁磁性层下的隧道磁阻（TMR）装置
公开(公告)号：US20090323228A1
公开(公告)日：2009-12-31
申请号：US12553864
申请日：2009-09-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
摘要翻译：隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。铁磁底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

22. 发明授权

US07423847B2 Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge 失效
标题翻译：电流垂直于平面的自旋阀（CPP-SV）传感器，电流限制孔径集中在感应边缘附近
公开(公告)号：US07423847B2
公开(公告)日：2008-09-09
申请号：US11268275
申请日：2005-11-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active region. The apertures are located closer to the sensing edge of the sensor than to the back edge of the sensor. The aperture (or apertures) are patterned by e-beam lithography, which enables the number, size and location of the apertures to be precisely controlled. The insulating layer may be located inside the electrically conductive nonmagnetic spacer layer, or outside of the magnetically active layers of the spin-valve. More than one insulating layer may be included in the stack to define conductive current paths where the apertures of the insulating layers overlap. The apertures are filled with electrically conductive material, typically the same material as that used for the spacer layer.
摘要翻译：电流 - 垂直于平面的自旋阀（CPP-SV）磁阻传感器具有绝缘层，其具有至少一个限制感应电流通过有源区域的孔径。孔比传感器的后边缘更靠近传感器的感测边缘。孔（或孔）通过电子束光刻被图案化，这使得能够精确地控制孔的数量，尺寸和位置。绝缘层可以位于导电非磁性间隔层内部，或位于自旋阀的磁性有效层的外部。堆叠中可以包括多于一个绝缘层，以限定绝缘层的孔重叠的导电电流路径。孔被填充有导电材料，通常与用于间隔层的材料相同。

23. 发明授权

US07298597B2 Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling 有权
标题翻译：基于自旋积累效应的磁阻传感器，通过叠层正交磁耦合稳定自由层
公开(公告)号：US07298597B2
公开(公告)日：2007-11-20
申请号：US11093342
申请日：2005-03-29
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3932 , H01L43/08
摘要： A magnetoresistive sensor based on the spin accumulation effect has an in-stack biasing structure with a ferromagnetic biasing layer that is magnetically-coupled orthogonally with the sensor free ferromagnetic layer across a spacer layer. The sensor has an electrically conductive strip with a first tunnel barrier and a free ferromagnetic layer on the front or sensing end of the strip and second tunnel barrier and a fixed ferromagnetic layer on the back end of the strip. A magnetically-coupling spacer layer is formed on the free layer and the ferromagnetic biasing layer is formed on the spacer layer. The magnetically-coupling layer induces direct orthogonal magnetic coupling between the in-plane magnetization directions of the biasing layer and the free layer.
摘要翻译：基于自旋累积效应的磁阻传感器具有堆叠偏置结构，其中铁磁偏置层与穿过间隔层的传感器自由铁磁层正交地磁耦合。传感器具有导电条带，其具有第一隧道势垒和在条带的前部或感测端上的自由铁磁层和第二隧道势垒以及带的后端上的固定铁磁层。在自由层上形成磁耦合间隔层，并且在间隔层上形成铁磁偏置层。磁耦合层在偏置层的面内磁化方向和自由层之间引起直接正交磁耦合。

24. 发明授权

US06977801B2 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer 失效
标题翻译：具有交换耦合结构的磁阻器件在被钉扎层中具有半金属铁磁Heusler合金
公开(公告)号：US06977801B2
公开(公告)日：2005-12-20
申请号：US10374819
申请日：2003-02-24
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/09 , G11B5/00 , G11B5/012 , G11B5/39 , G11B5/455 , G11B5/66 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/455 , G11B5/66 , G11B2005/001
摘要： A magnetoresistive device of the type with a pinned ferromagnetic layer and a free ferromagnetic layer separated by a nonmagnetic spacer layer has an exchange-coupled antiferromagnetic/ferromagnetic structure that uses a half-metallic ferromagnetic Heusler alloy with its near 100% spin polarization as the pinned ferromagnetic layer. The exchange-coupled structure includes an intermediate ferromagnetic layer between the AF layer and the pinned half-metallic ferromagnetic Heusler alloy layer, which results in exchange biasing. Magnetoresistive devices that can incorporate the exchange-coupled structure include current-in-the-plane (CIP) read heads and current-perpendicular-to-the-plane (CPP) magnetic tunnel junctions and read heads. The exchange-coupled structure may be located either below or above the nonmagnetic spacer layer in the magnetoresistive device.
摘要翻译：具有钉扎铁磁层和由非磁性间隔层隔开的自由铁磁层的类型的磁阻器件具有交换耦合反铁磁/铁磁结构，其使用具有近100％自旋极化的半金属铁磁Heusler合金作为固定铁磁层。交换耦合结构包括在AF层和被钉扎的半金属铁磁Heusler合金层之间的中间铁磁层，这导致交换偏置。可并入交换耦合结构的磁阻器件包括电流平面（CIP）读头和电流垂直于平面（CPP）磁隧道结和读头。交换耦合结构可以位于磁阻器件中的非磁性间隔层的下方或上方。

25. 发明授权

US06347049B1 Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier 有权
标题翻译：具有双层或多层隧道势垒的低阻磁隧道结装置
公开(公告)号：US06347049B1
公开(公告)日：2002-02-12
申请号：US09916077
申请日：2001-07-25
申请人： Jeffrey R. Childress , Bruce A. Gurney , Markus Schwickert
发明人： Jeffrey R. Childress , Bruce A. Gurney , Markus Schwickert
IPC分类号： G11C1115
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15
摘要： A low resistance magnetic tunnel junction (MTJ) device has a bilayer or multilayer as the insulating tunnel barrier. In one embodiment the tunnel barrier is a bilayer of a first layer of magnesium oxide on the bottom magnetic electrode and an aluminum oxide layer on the magnesium oxide layer. This bilayer is formed by oxidizing a bilayer of Mg/Al. In a second embodiment the tunnel barrier is a bilayer of first layer of aluminum nitride and a second layer of aluminum oxide on top of the aluminum nitride first layer, with this bilayer formed by oxidizing a bilayer of AlN/Al. MTJ devices with trilayer barriers, such as AlN/Al2O3/AlN, MgO/Al2O3/MgO and Al2O3/MgO/Al2O3 are also possible. The resulting magnetic tunnel junction devices have resistance-area values less than 1000 &OHgr;(&mgr;m)2 and preferably in the range of 0.1 to 100 &OHgr;(&mgr;m)2, making the devices suitable for magnetic read sensors.
摘要翻译：低电阻磁隧道结（MTJ）装置具有双层或多层作为绝缘隧道势垒。在一个实施例中，隧道势垒是底部磁极上的第一氧化镁层和氧化镁层上的氧化铝层的双层。该双层通过氧化Mg / Al的双层而形成。在第二实施例中，隧道势垒是在氮化铝第一层的顶部上的第一层氮化铝和第二层氧化铝的双层，通过氧化AlN / Al的双层形成该双层。具有三层屏障的MTJ器件，例如AlN / Al2O3 / AlN，MgO / Al2O3 / MgO和Al2O3 / MgO / Al2O3也是可能的。所得到的磁性隧道结器件的电阻面积值小于1000欧姆（mum）2，优选在0.1至100欧姆（mum）2的范围内，使得该器件适合于磁读取传感器。

26. 发明授权

US08739391B2 Silver alloy electrical lapping guides (ELGs) for fabrication of disk drive sliders with magnetoresistive sensors 有权
标题翻译：用于制造具有磁阻传感器的磁盘驱动器滑块的银合金电动研磨导轨（ELG）
公开(公告)号：US08739391B2
公开(公告)日：2014-06-03
申请号：US13238838
申请日：2011-09-21
申请人： Jeffrey R. Childress , David Patrick Druist , John Creighton Read
发明人： Jeffrey R. Childress , David Patrick Druist , John Creighton Read
IPC分类号： B23P19/00 , G11C5/12
CPC分类号： G11B5/3166 , G11B5/3169 , G11B5/6082
摘要： An air-bearing slider used in a magnetic recording disk drive has a surface that supports a magnetoresistive (MR) read head or sensor and an electrical lapping guide (ELG) adjacent to the MR sensor. The ELG is formed of a different material than the MR sensor so as to have both a high electrical resistivity and a substantially higher etch rate. When the ELG and MR sensor are etched simultaneously to form their respective back edges, the ELG will have a sharp well-defined non-tapered wall at the back edge. The ELG has a film thickness close to but generally thinner than that of the MR sensor, and a sheet resistance to generally match the resistance measurement capability of the lapping tool. The preferred material for the ELG is an alloy comprising silver (Ag) and one or more of Sn, Ge and zinc Zn.
摘要翻译：用于磁记录盘驱动器的空气滑动滑块具有支撑磁阻（MR）读头或传感器的表面，以及与MR传感器相邻的电研磨导轨（ELG）。 ELG由与MR传感器不同的材料形成，以具有高电阻率和显着更高的蚀刻速率。当ELG和MR传感器被同时蚀刻以形成它们各自的后边缘时，ELG在后边缘处将具有锐利明确的非锥形壁。 ELG具有接近但通常比MR传感器更薄的膜厚度，并且薄层电阻通常与研磨工具的电阻测量能力相匹配。用于ELG的优选材料是包含银（Ag）和Sn，Ge和锌Zn中的一种或多种的合金。

27. 发明授权

US08611053B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy 有权
标题翻译：具有包括Heusler合金的多层参考层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US08611053B2
公开(公告)日：2013-12-17
申请号：US13415813
申请日：2012-03-08
申请人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
发明人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , H01F10/1936 , H01F10/325 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
摘要翻译：电流垂直于平面的巨磁电阻（CPP-GMR）传感器具有包含Heusler合金的多层参考层。多层参考层可以是简单的钉扎层或反平行（AP）钉结构的AP2层。多层参考层由反铁磁层（简单的钉扎结构）或反平行耦合（APC）层（AP钉扎结构）中的结晶非Heusler合金铁磁层形成，与之相邻的Heusler合金层传感器的非磁性导电间隔层，以及在结晶非Heusler合金层和Heusler合金层之间的中间基本上非结晶的含X的层。元素X选自钽（Ta），铪（Hf），铌（Nb）和硼（B）中的一种或多种。

28. 发明申请

US20130236744A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH MULTILAYER REFERENCE LAYER INCLUDING A HEUSLER ALLOY 有权
标题翻译：具有多层参考层的电流 - 平面（CPP）磁传感器，包括一个高级合金
公开(公告)号：US20130236744A1
公开(公告)日：2013-09-12
申请号：US13415813
申请日：2012-03-08
申请人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
发明人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , H01F10/1936 , H01F10/325 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
摘要翻译：电流垂直于平面的巨磁电阻（CPP-GMR）传感器具有包含Heusler合金的多层参考层。多层参考层可以是简单的钉扎层或反平行（AP）钉结构的AP2层。多层参考层由反铁磁层（简单的钉扎结构）或反平行耦合（APC）层（AP钉扎结构）中的结晶非Heusler合金铁磁层形成，与之相邻的Heusler合金层传感器的非磁性导电间隔层，以及在结晶非Heusler合金层和Heusler合金层之间的中间基本上非结晶的含X的层。元素X选自钽（Ta），铪（Hf），铌（Nb）和硼（B）中的一种或多种。

29. 发明申请

US20130070371A1 SILVER ALLOY ELECTRICAL LAPPING GUIDES (ELGs) FOR FABRICATION OF DISK DRIVE SLIDERS WITH MAGNETORESISTIVE SENSORS 有权
标题翻译：用于制造具有磁传感器的磁盘驱动滑块的银合金电气导线（ELG）
公开(公告)号：US20130070371A1
公开(公告)日：2013-03-21
申请号：US13238838
申请日：2011-09-21
申请人： Jeffrey R. Childress , David Patrick Druist , John Creighton Read
发明人： Jeffrey R. Childress , David Patrick Druist , John Creighton Read
IPC分类号： G11B5/60 , H05K7/02
CPC分类号： G11B5/3166 , G11B5/3169 , G11B5/6082
摘要： An electrical lapping guide (ELG) for the fabrication of an air-bearing slider used in a magnetic recording disk drive is formed of a different material than the magnetoresistive (MR) read head or sensor so as to have both a high electrical resistivity and a substantially higher etch rate. When the ELG and MR sensor are etched simultaneously to form their respective back edges, the ELG will have a sharp well-defined non-tapered wall at the back edge. The ELG has a film thickness close to but generally thinner than that of the MR sensor, and a sheet resistance to generally match the resistance measurement capability of the lapping tool. The preferred material for the ELG is an alloy comprising silver (Ag) and one or more of Sn, Ge and zinc Zn.
摘要翻译：用于制造磁记录盘驱动器中使用的空气轴承滑块的电研磨导向器（ELG）由与磁阻（MR）读头或传感器不同的材料形成，以具有高电阻率和显着更高的蚀刻速率。当ELG和MR传感器被同时蚀刻以形成它们各自的后边缘时，ELG在后边缘处将具有锐利明确的非锥形壁。 ELG具有接近但通常比MR传感器更薄的膜厚度，并且薄层电阻通常与研磨工具的电阻测量能力相匹配。用于ELG的优选材料是包含银（Ag）和Sn，Ge和锌Zn中的一种或多种的合金。

30. 发明授权

US08178158B2 Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP) 有权
标题翻译：制造具有限流电路（CCP）的电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法
公开(公告)号：US08178158B2
公开(公告)日：2012-05-15
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： G11B5/00 , G11B5/127 , G11B5/133
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式