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1. 发明授权

US08611053B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy 有权
标题翻译：具有包括Heusler合金的多层参考层的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US08611053B2
公开(公告)日：2013-12-17
申请号：US13415813
申请日：2012-03-08
申请人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
发明人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , H01F10/1936 , H01F10/325 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
摘要翻译：电流垂直于平面的巨磁电阻（CPP-GMR）传感器具有包含Heusler合金的多层参考层。多层参考层可以是简单的钉扎层或反平行（AP）钉结构的AP2层。多层参考层由反铁磁层（简单的钉扎结构）或反平行耦合（APC）层（AP钉扎结构）中的结晶非Heusler合金铁磁层形成，与之相邻的Heusler合金层传感器的非磁性导电间隔层，以及在结晶非Heusler合金层和Heusler合金层之间的中间基本上非结晶的含X的层。元素X选自钽（Ta），铪（Hf），铌（Nb）和硼（B）中的一种或多种。

2. 发明申请

US20130236744A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH MULTILAYER REFERENCE LAYER INCLUDING A HEUSLER ALLOY 有权
标题翻译：具有多层参考层的电流 - 平面（CPP）磁传感器，包括一个高级合金
公开(公告)号：US20130236744A1
公开(公告)日：2013-09-12
申请号：US13415813
申请日：2012-03-08
申请人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
发明人： Elizabeth Ann Brinkman , Matthew J. Carey , Jeffrey R. Childress , Young-suk Choi , Brian R. York
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , H01F10/1936 , H01F10/325 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
摘要翻译：电流垂直于平面的巨磁电阻（CPP-GMR）传感器具有包含Heusler合金的多层参考层。多层参考层可以是简单的钉扎层或反平行（AP）钉结构的AP2层。多层参考层由反铁磁层（简单的钉扎结构）或反平行耦合（APC）层（AP钉扎结构）中的结晶非Heusler合金铁磁层形成，与之相邻的Heusler合金层传感器的非磁性导电间隔层，以及在结晶非Heusler合金层和Heusler合金层之间的中间基本上非结晶的含X的层。元素X选自钽（Ta），铪（Hf），铌（Nb）和硼（B）中的一种或多种。

3. 发明授权

US08617644B2 Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing 失效
标题翻译：制造包含需要后沉积退火的铁磁合金的电流垂直平面（CPP）磁阻传感器的方法
公开(公告)号：US08617644B2
公开(公告)日：2013-12-31
申请号：US13415808
申请日：2012-03-08
申请人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
发明人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
IPC分类号： G11B5/84
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.
摘要翻译：在传感器的含Mn反铁磁性钉扎层上制造具有Heusler合金钉扎层的电流垂直于平面的巨磁电阻（CPP-GMR）传感器的方法采用两个退火步骤。一层结晶的非Heusler合金铁磁材料，如Co或CoFe，沉积在反铁磁性钉扎层上，并且含有非晶态的含铁铁磁性合金如CoFeBTa层沉积在Co或CoFe晶体层上。在非晶态含铁铁磁性合金的第一次原位退火之后，将Heusler合金钉扎层沉积在含非晶态的铁磁性层上，并执行第二个高温退火步骤，以改善Heusler合金被钉扎的微结构层。

4. 发明申请

US20130064971A1 METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH AN ANTIPARALLEL FREE (APF) STRUCTURE FORMED OF AN ALLOY REQUIRING POST-DEPOSITION HIGH TEMPERATURE ANNEALING 审中-公开
标题翻译：用于制备具有需要后沉积高温退火的合金形成的无反应（APF）结构的电流 - 平面（CPP）磁传感器（MR）传感器的方法
公开(公告)号：US20130064971A1
公开(公告)日：2013-03-14
申请号：US13231608
申请日：2011-09-13
申请人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi
发明人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi
IPC分类号： B05D5/00 , B05D3/02 , B05D1/38 , B05D5/12
CPC分类号： H01F41/303 , B82Y40/00 , G01R33/091 , G11B5/3163 , G11B5/3906 , H01F10/1936 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： A method for making a current-perpendicular-to-the plane magnetoresistive (CPP-MR) sensor with an antiparallel-free APF structure having the first free layer (FL1) formed of an alloy, like a Heusler alloy, that requires high-temperature or extended-time post-deposition annealing includes the step of annealing the Heusler alloy material before deposition of the antiparallel coupling layer (APC) of the APF structure. In a modification to the method, a protection layer, for example, a layer of Ru, Ta, Ti, Al, CoFe, CoFeB or NiFe, may deposited on the layer of Heusler alloy material prior to annealing, and then etched away to expose the underlying Heusler alloy layer as FL1.
摘要翻译：一种制造具有反平行磁阻（CPP-MR）传感器的电流垂直于平面磁阻（CPP-MR）传感器的方法，其具有由诸如Heusler合金的合金形成的第一自由层（FL1），其需要高温或延长时间的沉积后退火包括在沉积APF结构的反平行耦合层（APC）之前退火Heusler合金材料的步骤。在该方法的修改中，保护层例如Ru，Ta，Ti，Al，CoFe，CoFeB或NiFe的层可以在退火之前沉积在Heusler合金材料层上，然后蚀刻掉以露出底层Heusler合金层为FL1。

5. 发明申请

US20130236639A1 METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR CONTAINING A FERROMAGNETIC ALLOY REQUIRING POST-DEPOSITION ANNEALING 失效
标题翻译：制造包含需要后沉积退火的铁素体合金的电流 - 平面（CPP）磁传感器的方法
公开(公告)号：US20130236639A1
公开(公告)日：2013-09-12
申请号：US13415808
申请日：2012-03-08
申请人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
发明人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Young-suk Choi , John Creighton Read
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3268 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A method for making a current-perpendicular-to the-plane giant magnetoresistance (CPP-GMR) sensor with a Heusler alloy pinned layer on the sensor's Mn-containing antiferromagnetic pinning layer uses two annealing steps. A layer of a crystalline non-Heusler alloy ferromagnetic material, like Co or CoFe, is deposited on the antiferromagnetic pinning layer and a layer of an amorphous X-containing ferromagnetic alloy, like a CoFeBTa layer, is deposited on the Co or CoFe crystalline layer. After a first in-situ annealing of the amorphous X-containing ferromagnetic alloy, the Heusler alloy pinned layer is deposited on the amorphous X-containing ferromagnetic layer and a second high-temperature annealing step is performed to improve the microstructure of the Heusler alloy pinned layer.
摘要翻译：在传感器的含Mn反铁磁性钉扎层上制造具有Heusler合金钉扎层的电流垂直于平面的巨磁电阻（CPP-GMR）传感器的方法采用两个退火步骤。一层结晶的非Heusler合金铁磁材料，如Co或CoFe，沉积在反铁磁性钉扎层上，并且含有非晶态的含铁铁磁性合金如CoFeBTa层沉积在Co或CoFe晶体层上。在非晶态含铁铁磁性合金的第一次原位退火之后，将Heusler合金钉扎层沉积在含非晶态的铁磁性层上，并执行第二个高温退火步骤，以改善Heusler合金被钉扎的微结构层。

6. 发明授权

US08014109B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon 有权
标题翻译：电流垂直于平面（CPP）磁阻传感器，包含硅的反平行钉扎层
公开(公告)号：US08014109B2
公开(公告)日：2011-09-06
申请号：US11867063
申请日：2007-10-04
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
摘要翻译：电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金并且可选地在CPP-SV传感器的自由层中。参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层与CPP-SV传感器的间隔层接触。含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。

7. 发明申请

US20110043950A1 TUNNELING MAGNETORESISTIVE (TMR) READ HEAD WITH LOW MAGNETIC NOISE 有权
标题翻译： TONNELING MAGNETORESISTIVE（TMR）阅读头与低磁性噪音
公开(公告)号：US20110043950A1
公开(公告)日：2011-02-24
申请号：US12545776
申请日：2009-08-21
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.
摘要翻译：隧道磁阻（TMR）器件，如磁记录盘驱动器的TMR读头，由于向铁磁性自由层添加铁磁背衬层，所以具有较低的磁阻尼，因而具有较低的磁场噪声。背衬层是具有低吉尔伯特阻尼常数或参数α的材料，Landau-Lifshitz-Gilbert方程中众所周知的无量纲系数。背衬层可以具有使得其贡献高达组合的自由层和背衬层的总矩/面积的三分之二的厚度。背衬层可以由具有选自（CoxFe（100-x））（100-y）Xy，（Co2Mn）（100-y）Xy和（Co2FexMn（1-x））（100- y）Xy，其中X选自Ge，Al和Si，和（Co 2 Fe）（100-y）Aly，其中y在导致材料的阻尼常数低的范围内。

8. 发明申请

US20100033881A1 MAGNETIC FIELD SENSING SYSTEM USING SPIN-TORQUE DIODE EFFECT 有权
标题翻译：使用旋转二极管效应的磁场感应系统
公开(公告)号：US20100033881A1
公开(公告)日：2010-02-11
申请号：US12188183
申请日：2008-08-07
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3286 , H03B15/006
摘要： A magnetic field sensing system with a current-perpendicular-to-the-plane (CPP) sensor, like that used for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) spin-valve (SV) sensors, operates in a mode different from conventional GMR-SV and TMR-SV systems. An alternating-current (AC) source operates at a fixed selected frequency and directs AC perpendicularly through the layers of the CPP sensor, with the AC amplitude being high enough to deliberately induce a spin-torque in the CPP sensor's free layer. The AC-induced spin-torque at the selected frequency causes oscillations in the magnetization of the free layer that give rise to a DC voltage signal VDC. VDC is a direct result of only the oscillations induced in the free layer. The value of VDC will change in response to the magnitude of the external magnetic field being sensed and as the free layer is driven in and out of resonance with the AC. The DC voltage resulting from AC-induced spin-torque oscillations of the free layer magnetization represents the actual magnetoresistive signal.
摘要翻译：与用于巨磁阻（GMR）和隧道磁阻（TMR）自旋阀（SV）传感器的电流 - 垂直平面（CPP）传感器的磁场感测系统以不同于常规GMR-SV和TMR-SV系统。交流（AC）源以固定的选定频率工作，并直接通过CPP传感器的层引导AC，AC振幅足够高以故意诱导CPP传感器自由层中的自旋扭矩。所选频率下的交流感应自旋转矩引起自由层的磁化振动，产生直流电压信号VDC。 VDC是仅在自由层中引起的振荡的直接结果。 VDC的值将响应于被感测的外部磁场的大小而变化，并且自由层被驱动进入和退出与AC谐振。由自由层磁化的交流感应自旋转矩振荡产生的直流电压表示实际磁阻信号。

9. 发明申请

US20090091864A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-PINNED LAYER CONTAINING SILICON 有权
标题翻译：具有防粘连硅层的电流 - 平面（CPP）磁传感器
公开(公告)号：US20090091864A1
公开(公告)日：2009-04-09
申请号：US11867063
申请日：2007-10-04
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
摘要翻译：电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金并且可选地在CPP-SV传感器的自由层中。参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层与CPP-SV传感器的间隔层接触。含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。

10. 发明授权

US08015694B2 Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor 有权
标题翻译：用于制造剪切型电流 - 垂直于平面（CPP）磁阻传感器的方法
公开(公告)号：US08015694B2
公开(公告)日：2011-09-13
申请号：US11959102
申请日：2007-12-18
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.
摘要翻译：具有双铁磁感测或由非磁性间隔层隔开的自由层的“扫描型”电流垂直平面（CPP）磁阻传感器具有改善的稳定性，这是由于每个中的蚀刻诱导的单轴磁各向异性自由层。两个铁磁自由层中的每一个具有蚀刻诱导的单轴磁各向异性和在静止状态下基本上平行于其单轴各向异性的面内磁矩，即不存在施加的磁场。每个自由层的蚀刻诱导的单轴各向异性通过对每个自由层的直接离子蚀刻和/或通过其上沉积有每个自由层的层的离子蚀刻来实现。通过蚀刻在自由层中诱发强烈的磁各向异性，这有利于静止状态下的两个自由层的大致正交取向。

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