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21. 发明申请

US20060050192A1 Thin film transistor array panel and method for manufacturing the same 失效
公开(公告)号：US20060050192A1
公开(公告)日：2006-03-09
申请号：US11180989
申请日：2005-07-12
申请人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
发明人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/3276 , Y10S438/924
摘要： The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.

22. 发明授权

US07858982B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07858982B2
公开(公告)日：2010-12-28
申请号：US11215067
申请日：2005-08-29
申请人： Je-Hun Lee , Beom-Seok Cho , Chang-Oh Jeong , Joo-Han Kim
发明人： Je-Hun Lee , Beom-Seok Cho , Chang-Oh Jeong , Joo-Han Kim
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/12 , H01L29/458
摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.
摘要翻译：本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在栅极绝缘层上并与栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

23. 发明授权

US07741641B2 TFT substrate and display device having the same 失效
标题翻译： TFT基板和具有该TFT基板的显示装置
公开(公告)号：US07741641B2
公开(公告)日：2010-06-22
申请号：US11371057
申请日：2006-03-08
申请人： Yang-Ho Bae , Chang-Oh Jeong , Min-Seok Oh , Je-Hun Lee , Beom-Seok Cho
发明人： Yang-Ho Bae , Chang-Oh Jeong , Min-Seok Oh , Je-Hun Lee , Beom-Seok Cho
IPC分类号： H01L29/43 , H01L29/786
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current (“Ion”) for turning on the TFT and increasing the off-current (“Ioff”) for turning off the TFT due to the oxidation-blocking layer.
摘要翻译： TFT基板包括基底基板，形成在基底基板上的栅极布线，栅极绝缘层，激活层，氧化阻挡层，数据布线，保护层和像素电极。栅极布线包括栅极线和栅电极。栅极绝缘层形成在基底基板上以覆盖栅极布线。活化层形成在栅绝缘层上。氧化阻挡层形成在活化层上。数据线包括数据线，源电极和漏电极。源电极和漏电极设置在氧化阻挡层上，因此降低用于导通TFT的导通电流（“Ion”），并且由于氧化阻挡层而增加关闭TFT的截止电流（“Ioff”），阻挡层。

24. 发明授权

US07619254B2 Thin film transistor array panel including layered line structure and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板包括分层线结构及其制造方法
公开(公告)号：US07619254B2
公开(公告)日：2009-11-17
申请号：US11228852
申请日：2005-09-16
申请人： Je-Hun Lee , Yang-Ho Bae , Beom-Seok Cho , Chang-Oh Jeong
发明人： Je-Hun Lee , Yang-Ho Bae , Beom-Seok Cho , Chang-Oh Jeong
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1214 , H01L27/1225 , H01L27/124
摘要： The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
摘要翻译：本发明提供一种薄膜晶体管阵列板，其包括绝缘基板; 形成在所述绝缘基板上的栅极线; 栅极绝缘层，形成在栅极线上; 漏电极和数据线，其具有形成在所述栅极绝缘层上的源电极，所述漏电极与所述源电极相邻，其间具有间隙; 以及耦合到所述漏电极的像素电极，其中所述栅极线，所述数据线和所述漏电极中的至少一个包括包括导电氧化物的第一导电层和包含铜（Cu）的第二导电层。

25. 发明授权

US07550768B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07550768B2
公开(公告)日：2009-06-23
申请号：US11944130
申请日：2007-11-21
申请人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
发明人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L29/15
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/3276 , Y10S438/924
摘要： The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.
摘要翻译：本发明提供一种TFT阵列面板及其制造方法，其特征在于，具有含有Al的金属的下层和包含钼（Mo）的钼合金（Mo合金）的上层的信号线，至少包括铌（Nb），钒（V）和钛（Ti）之一。因此，防止在蚀刻工艺中可能出现的底切，突出和小鼠咬合，并且提供具有低电阻率和良好接触特性的信号线的TFT阵列面板。

26. 发明申请

US20080166827A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20080166827A1
公开(公告)日：2008-07-10
申请号：US11944083
申请日：2007-11-21
申请人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
发明人： Beom-Seok Cho , Yang-Ho Bae , Je-Hun Lee , Chang-Oh Jeong
IPC分类号： H01L21/70
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/3276 , Y10S438/924
摘要： The present invention provides a TFT array panel and a manufacturing method of the same, which has signal lines including a lower layer of an Al containing metal and an upper layer of a molybdenum alloy (Mo-alloy) comprising molybdenum (Mo) and at least one of niobium (Nb), vanadium (V), and titanium (Ti). Accordingly, undercut, overhang, and mouse bites which may arise in an etching process, are prevented, and TFT array panels that have signal lines having low resistivity and good contact characteristics are provided.
摘要翻译：本发明提供一种TFT阵列面板及其制造方法，其特征在于，具有含有Al的金属的下层和包含钼（Mo）的钼合金（Mo合金）的上层的信号线，至少包括铌（Nb），钒（V）和钛（Ti）之一。因此，防止在蚀刻工艺中可能出现的底切，突出和小鼠咬合，并且提供具有低电阻率和良好接触特性的信号线的TFT阵列面板。

27. 发明申请

US20060283833A1 Wiring for display device and thin film transistor array panel with the same, and manufacturing method thereof 审中-公开
标题翻译：用于显示装置和薄膜晶体管阵列面板的布线及其制造方法
公开(公告)号：US20060283833A1
公开(公告)日：2006-12-21
申请号：US11374938
申请日：2006-03-13
申请人： Je-Hun Lee , Sung-Hoon Yang , Chang-Oh Jeong , Beom-Seok Cho , Yang-Ho Bae
发明人： Je-Hun Lee , Sung-Hoon Yang , Chang-Oh Jeong , Beom-Seok Cho , Yang-Ho Bae
IPC分类号： C30B33/00 , B44C1/22 , G02F1/1343
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： A TFT array panel for an LCD includes a substrate, a first signal line and a second signal line that cross each other on the substrate, a TFT that is connected to the first signal line and the second signal line, and a pixel electrode that is connected to the TFT. Here, at least one of the two signal lines includes a first conductive layer containing molybdenum, a second conductive layer that is formed on the first conductive layer and contains copper, and a third conductive layer that is formed on the second conductive layer and contains a conductive oxide.
摘要翻译：用于LCD的TFT阵列面板包括基板，第一信号线和在基板上彼此交叉的第二信号线，连接到第一信号线和第二信号线的TFT，以及像素电极连接到TFT。这里，两个信号线中的至少一个包括含有钼的第一导电层，形成在第一导电层上并含有铜的第二导电层，以及形成在第二导电层上的第三导电层，导电氧化物。

28. 发明授权

US08558230B2 Thin film transistor substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08558230B2
公开(公告)日：2013-10-15
申请号：US12756323
申请日：2010-04-08
申请人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
发明人： Dong-Hoon Lee , Je-Hun Lee , Do-Hyun Kim , Hee-Tae Kim , Chang-Oh Jeong , Pil-Sang Yun , Ki-Won Kim
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L29/7869
摘要： A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
摘要翻译：提供薄膜晶体管（TFT）基板及其制造方法。薄膜晶体管基板可以具有低电阻特性，并且可以减少有源层图案和数据布线之间的相互扩散和接触电阻。薄膜晶体管基板可以包括形成在绝缘基板上的栅极布线。氧化物有源层图案可以形成在栅极布线上，并且可以包括第一物质。数据布线可以形成在氧化物有源层图案上以跨越栅极布线，并且可以包括第二物质。阻挡层图案可以设置在氧化物活性层图案和数据布线之间，并且可以包括第三物质。

29. 发明授权

US08507956B2 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate 有权
标题翻译：线结构，制造线的方法，薄膜晶体管基板以及制造薄膜晶体管基板的方法
公开(公告)号：US08507956B2
公开(公告)日：2013-08-13
申请号：US13051904
申请日：2011-03-18
申请人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Chang-Oh Jeong , Eun-Guk Lee , Do-Hyun Kim
IPC分类号： H01L33/00 , H01L29/43 , H01L29/49 , H01L29/76
CPC分类号： H01L29/458 , H01L27/124 , H01L29/4908
摘要： Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.
摘要翻译：提供线结构，制造线的方法，薄膜晶体管（TFT）基板和制造TFT基板的方法。导线结构包括在基板上形成的包含铜层和铜固溶体层的阻挡层。

30. 发明授权

US07902553B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07902553B2
公开(公告)日：2011-03-08
申请号：US11930536
申请日：2007-10-31
申请人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
发明人： Byoung-June Kim , Jae-Ho Choi , Chang-Oh Jeong , Sung-Hoon Yang , Je-Hun Lee , Do-Hyun Kim , Hwa-Yeul Oh , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765
摘要： A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要翻译：薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

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