会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • Electrostatic chuck support assembly
    • 静电吸盘支架组件
    • US07939784B2
    • 2011-05-10
    • US12362139
    • 2009-01-29
    • Robert StegerKeith Comendant
    • Robert StegerKeith Comendant
    • B23K10/00
    • H01L21/67248H01L21/6831Y10T279/23
    • A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.
    • 调整静电卡盘(ESC)支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度,其中每个部位与给定的电池相关联,从测量中确定任何部分面积的减小 建议每个电池,并根据建议的分数还原从每个电池中的支撑组件表面去除材料,以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性,或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此,热导率调节可以通过包括限定单元结构,确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔,布线,激光加工或砂粒加工可以实现材料去除。
    • 25. 发明申请
    • QUARTZ GUARD RING CENTERING FEATURES
    • QUARTZ GUARD戒指中心特点
    • US20110083318A1
    • 2011-04-14
    • US12967717
    • 2010-12-14
    • Dean J. LarsonDaniel BrownKeith ComendantVictor Wang
    • Dean J. LarsonDaniel BrownKeith ComendantVictor Wang
    • B23P11/00
    • H01J37/3255H01J37/32009H01J37/32568Y10T29/49002
    • An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.
    • 一种电极组件和使外环围绕用于半导体衬底处理的等离子体反应室中的电极组件对中的方法。 该方法包括将外环围绕电极组件的背衬构件的外表面定位,并且在外环和背衬构件之间插入至少一个定心元件。 定心元件可以是容纳在背衬构件的外表面上的空腔中的多个弹簧加载的定心元件,定心元件具有适于接触外圈的第一端和适于容纳弹簧的第二端。 外环围绕背衬构件的外表面,使得多个弹簧加载的定心元件位于背衬构件的外表面和外环的内表面之间。
    • 26. 发明授权
    • Quartz guard ring centering features
    • 石英护环中心功能
    • US07875824B2
    • 2011-01-25
    • US11701507
    • 2007-02-02
    • Dean J. LarsonDaniel BrownKeith ComendantVictor Wang
    • Dean J. LarsonDaniel BrownKeith ComendantVictor Wang
    • B23K10/00
    • H01J37/3255H01J37/32009H01J37/32568Y10T29/49002
    • An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.
    • 一种电极组件和使外环围绕用于半导体衬底处理的等离子体反应室中的电极组件对中的方法。 该方法包括将外环围绕电极组件的背衬构件的外表面定位,并且在外环和背衬构件之间插入至少一个定心元件。 定心元件可以是容纳在背衬构件的外表面上的空腔中的多个弹簧加载的定心元件,定心元件具有适于接触外圈的第一端和适于容纳弹簧的第二端。 外环围绕背衬构件的外表面,使得多个弹簧加载的定心元件位于背衬构件的外表面和外环的内表面之间。
    • 27. 发明申请
    • Substrate temperature control by using liquid controlled multizone substrate support
    • 通过使用液体多基质底物支持底物温度控制
    • US20100116788A1
    • 2010-05-13
    • US12292081
    • 2008-11-12
    • Harmeet SinghKeith Comendant
    • Harmeet SinghKeith Comendant
    • B44C1/22C23F1/08C23C16/54C23C14/22C23C14/34
    • H01L21/67248C23C16/4586C23C16/46C23C16/463C23C16/50C23C16/52H01J2237/2001H01L21/67109H01L21/6831
    • A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.
    • 提供了一种用于等离子体处理装置的反应室中的基板支架。 衬底支撑件包括基部构件和覆盖基底构件的传热构件。 传热构件具有多个区域以分别加热和冷却传热构件的每个区域。 静电吸盘覆盖传热部件。 静电卡盘具有用于在等离子体处理装置的反应室中支撑基板的支撑表面。 冷液源和热液体源与每个区域中的流动通道流体连通。 阀装置可操作以通过调节热液体与在流动通道中循环的冷液体的混合比来独立地控制液体的温度。 在另一个实施例中,沿着供应管线和输送管线的加热元件在流动通道中循环之前加热来自液体源的液体。
    • 30. 发明申请
    • Method of tuning thermal conductivity of electrostatic chuck support assembly
    • 调整静电卡盘支撑组件的导热性的方法
    • US20080083736A1
    • 2008-04-10
    • US11511367
    • 2006-08-29
    • Robert StegerKeith Comendant
    • Robert StegerKeith Comendant
    • H05B1/02H01L21/683B23K9/02
    • H01L21/67248H01L21/6831Y10T279/23
    • A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.
    • 调整静电卡盘(ESC)支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度,其中每个部位与给定的电池相关联,从测量中确定任何部分面积的减小 建议每个电池,并根据建议的分数还原从每个电池中的支撑组件表面去除材料,以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性,或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此,热导率调节可以通过包括限定单元结构,确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔,布线,激光加工或砂粒加工可以实现材料去除。